NTE NTE56071 Triac, 25a, high commutation Datasheet

NTE56070 & NTE56071
TRIAC, 25A, High Commutation
Description:
The NTE56070 and NTE56071 are glass passivated, high commutation TRIACs in a TO220 type
package designed for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
These devices will commutate the full rated RMS current at the maximum rated junction temperature,
without the aid of a snubber.
Absolute Maximum Ratings:
Repetitive Peak Off–Sate Voltage (Note 1), VDRM
NTE56070 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
NTE56071 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V
RMS On–State Current (Full Sine Wave, TMB ≤ 91°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . 25A
Non–Repetitive Peak On–State Current, ITSM
(Full Sine Wave, TJ = +25°C prior to Surge)
t = 20ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190A
t = 16.7ms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 209A
I2t for Fusing (t = 10ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180A2sec
Repetitive Rate–of–Rise of On–State Current after Triggering, dIT/dt
(ITM = 30A, IG = 0.2A, dIG/dt = 0.2A/µs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100A/µs
Peak Gate Current, IGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Voltage, VGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Peak Gate Power, PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5W
Average Gate Power (Over Any 20ms Period), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Thermal Resistance, Junction–to–Mounting Base, RthJMB
Full Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0K/W
Half Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4K/W
Typical Thermal Resistance, Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W
Note 1. Although not recommended, off–state voltages up to 800V may be applied without damage,
but the TRIAC may switch to the on–state. The rate–of–rise of current should not exceed
15A/µs.
Electrical Characteristics: (TJ = +25°C unless otherwise specfied)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
2
18
50
mA
MT2 (+), G (–)
2
21
50
mA
MT2 (–), G (–)
2
34
50
mA
–
31
60
mA
MT2 (+), G (–)
–
34
90
mA
MT2 (–), G (–)
–
30
60
mA
Static Characteristics
Gate Trigger Current
MT2 (+), G (+)
IGT
Latching Current
MT2 (+), G (+)
IL
VD = 12V, IT = 0.1A, Note 2
VD = 12V, IT = 0.1A
Holding Current
IH
VD = 12V, IT = 0.1A
–
31
60
mA
On–State Voltage
VT
IT = 30A
–
1.3
1.55
V
VD = 12V, IT = 0.1A
–
0.7
1.5
V
0.25
0.4
–
V
–
0.1
0.5
mA
1000
4000
–
V/µs
Gate Trigger Voltage
VGT
VD = 400V, IT = 0.1A, TJ = +125°C
Off–State Leakage Current
ID
VD = VDRMmax, TJ = +125°C
Dynamic Characteristics
Critical Rate–of–Rise of
Off–State Voltage
dVD/dt
VDM = 67% VDRMmax, TJ = +125°C,
Exponential Waveform, Gate Open
Critical Rate–of–Change of
Commutating Current
dIcom/dt
VDM = 400V, TJ = +125°C, ITRMS = 25A,
without Snubber, Gate Open
–
44
–
A/ms
ITM = 12A, VD = VDRMmax, IG = 0.1A,
dIG/dt = 5A/µs
–
2
–
µs
Gate Controlled Turn–On Time
tgt
Note 2. Device does not trigger in the MT2 (–), G (+) quadrant.
.420 (10.67)
Max
.110 (2.79)
MT2
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.070 (1.78) Max
.500
(12.7)
Min
MT1
Gate
.100 (2.54)
MT2