NTE NTE379 Silicon npn transistor power amp, high voltage, switch Datasheet

NTE379
Silicon NPN Transistor
Power Amp, High Voltage, Switch
Description:
The NTE379 is a silicon NPN transistor in a TO220 type package designed for high–voltage, high–
speed power switching inductive circuits where fall time is critical. This device is particularly suited
for 115 and 220V switch–mode applications such as Switching Regulators, Inverters, Motor Controls,
Solenoid/Relay drivers, and Deflection circuits.
Features:
D VCEO(sus) = 400V
D Reverse Bias SOA with Inductive Loads @ TC = +100°C
D 700V Blocking Capability
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
Collector–Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9V
Collector Current, IC
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24A
Base Current, IB
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A
Emitter Current, IE
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A
Total Power Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/°C
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C
Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25°C/W
Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5°C/W
Lead Temperature (During Soldering, 1/8” from case for 5sec), TL . . . . . . . . . . . . . . . . . . . . . +275°C
Note 1. Pulse Test: Pulse Width = 5ms, Duty Cycle ≤ 10%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
400
–
–
V
VCEV = 700V, VBE(off) = 1.5V
–
–
1
mA
VCEV = 700V, VBE(off) = 1.5V,
TC = +100°C
–
–
5
mA
IEBO
VEB = 9V, IC = 0
–
–
1
mA
hFE
IC = 5A, VCE = 5V
8
–
40
IC = 8A, VCE = 5V
6
–
30
IC = 5A, IB = 1A
–
–
1.0
V
IC = 8A, IB = 1.6A
–
–
1.5
V
IC = 12A, IB = 3A
–
–
3.0
V
IC = 8A, IB = 1.6A, TC = +100°C
–
–
2.0
V
IC = 5A, IB = 1A
–
–
1.2
V
IC = 8A, IB = 1.6A
–
–
1.6
V
IC = 8A, IB = 1.6A, TC = +100°C
–
–
1.5
V
IC = 500mA, VCE = 10V, f = 1MHz
4
–
–
MHz
VCB = 10V, IE = 0, f = 0.1MHz
–
180
–
pF
–
0.06
0.1
µs
–
0.45
1.0
µs
–
1.3
3.0
µs
–
0.2
0.7
µs
–
0.92
2.3
µs
–
0.12
0.7
µs
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
VCEO(sus) IC = 10mA, IB = 0
ICEV
ON Characteristics (Note 2)
DC Current Gain
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Dynamic Characteristics
Current Gain–Bandwidth Product
Output Capacitance
fT
Cob
Switching Characteristics
Resistive Load
Delay Time
td
Rise Time
tr
Storage Tme
ts
Fall Time
tf
VCC = 125V, IC = 8A,
IB1 = IB2 = 1.6A, tp = 25µs,
µ
Duty Cycle ≤ 1%
Inductive Load, Clamped
Voltage Storage Time
tsv
Crossover Time
tc
IC = 8A, Vclamp = 300V, IB1 = 1.6A,
VBE(off) = 5V, TC = +100°C
Note 2. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%.
.420 (10.67)
Max
.110 (2.79)
.147 (3.75)
Dia Max
.500
(12.7)
Max
.250 (6.35)
Max
.500
(12.7)
Min
.070 (1.78) Max
Base
.100 (2.54)
Emitter
Collector/Tab