AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n General Description The AME8855A family of positive, CMOS linear regulators provide low dropout voltage(420mV@600mA), low quiescent current, and low noise CMOS LDO. These rugged devices have both Thermal Shutdown, and Current limit to prevent device failure under the "Worst" of operating conditions. n Typical Application IN OUT IN OUT AME8855 A EN GND CIN 1µF COUT 1µF n Features l Low Dropout Voltage: 420mV@600mA l Guaranteed Current: 600mA l Quiescent Current: 60µA (typ.) l Over-Temperature Shutdown n Functional Block Diagram l Current Limiting protection l PSRR:60dB@10KHz l Ultra-Low-Noise: 100µVRMS at 1Hz to 100KHz IN OUT l Low Temperature Coefficient l Input Voltage Range 2.8V~5.5V Overcurrent Shutdown l Output Voltage Range: 0.8V ~ 4.3V l Green Products Meet RoHS Standards Thermal Shutdown EN n Applications l Instrumentation R1 AMP + l Portable Electronics l Wireless Devices l Cordless Phones l PC Peripherals l Battery Powered Widgets Rev. B.02 R2 Vref GND 1 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Pin Configuration 3 Pin SOT-223 Top View SOT-223 Top View AME8855 A AME8855A-AGTxxx AME8855A-BGTxxx 1. IN 1. GND 2. GND (TAB) AME8855 A 3. OUT 1 2 3 * Die Attach: Conductive Epoxy SOT-89 Top View 3. IN 1 2 3 AME8855A-BFTxxx 1. IN AME8855A 2. GND (TAB) 1. GND AME8855A 2. OUT (TAB) 3. OUT 2 * Die Attach: Non-Conductive Epoxy SOT-89 Top View AME8855A-AFTxxx 1 2. OUT (TAB) 3 * Die Attach: Conductive Epoxy 3. IN 1 2 3 * Die Attach: Non-Conductive Epoxy SOT-89 Top View AME8855A-CFTxxx 1. GND AME8855A 2. IN (TAB) 3. OUT 1 2 2 3 * Die Attach: Non-Conductive Epoxy Rev. B.02 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A Pin Configuration (Contd.) 3 Pin SOT-23 Top View SOT-23 Top View AME8855 A AME8855A-AETxxx 1. IN 2. GND 3. OUT AME8855 A AME8855A-BETxxx 1. GND 2. OUT 3. IN 1 * Die Attach: Non-Conductive Epoxy 1 * Die Attach: Non-Conductive Epoxy 3 2 3 2 8 Pin 5 Pin SOT-25 Top View 5 SOP-8 Top View 4 AME8855A 1 2 AME8855A-AEVxxx 1. IN 2. GND 3. EN 4. NC 5. OUT 8 7 6 5 AME8855A 3 1 * Die Attach: Conductive Epoxy 2 3 4 AME8855A-AHAxxx 1. IN 2. GND 3. 4. 5. 6. 7. 8. GND OUT NC GND GND EN * Die Attach: Conductive Epoxy Rev. B.02 3 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Pin Description SOT-223 Pin Number Pin Name Pin Description A B 1 3 IN 2 1 GND Ground connection pin. 3 2 OUT LDO voltage regulator output pin; should be decoupled with a 1.0µF or greater value low ESR ceramic capacitor. Input voltage pin; should be decoupled with 1µF or greater capacitor. SOT-89 Pin Number 4 Pin Name Pin Description A B C 1 3 2 IN 2 1 1 GND Ground connection pin. 3 2 3 OUT LDO voltage regulator output pin; should be decoupled with a 1.0µF or greater value low ESR ceramic capacitor. Input voltage pin; should be decoupled with 1µF or greater capacitor. Rev. B.02 AME AME8855A High PSRR, Low Noise, 600mA CMOS Regulator n Pin Description SOP-8 Pin Name IN Pin Description Input voltage pin; should be decoupled with 1µF or greater capacitor. GND Ground connection pin. GND Ground connection pin. OUT LDO voltage regulator output pin; should be decoupled with a 1.0µF or greater value low ESR ceramic capacitor. NC No connection. GND Ground connection pin. GND Ground connection pin. EN Rev. B.02 Enable pin, Active “high". When pulled “low”, the PMOS pass transistor turns off, current consuming less than 1µA. When EN pin floating outside, it’s weakly pulled low by internal small current source . 5 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Pin Configuration SOT-23 Pin Number Pin Name Pin Description A B 1 3 IN 2 1 GND Ground connection pin. 3 2 OUT LDO voltage regulator output pin; should be decoupled with a 1.0µF or greater value low ESR ceramic capacitor. Pin Number Pin Name Pin Description 1 IN 2 GND Input voltage pin; should be decoupled with 1µF or greater capacitor. SOT-25 6 Input voltage pin; should be decoupled with 1µF or greater capacitor. Ground connection pin. 3 EN Enable pin, Active “high". When pulled “low”, the PMOS pass transistor turns off, current consuming less than 1µA. When EN pin floating outside, it’s weakly pulled low by internal small current source . 4 NC No connection. 5 OUT LDO voltage regulator output pin; should be decoupled with a 1.0µF or greater value low ESR ceramic capacitor. Rev. B.02 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Ordering Information AME8855A - x x x xxx Output Voltage Number of Pins Package Type Pin Configuration Pin Configuration A (SOT-223) (SOT-23) 1. IN 2. GND 3. OUT (SOT-89) B (SOT-223) (SOT-23) 1. GND 2. OUT 3. IN (SOT-89) C (SOT-89) A (SOT-25) A (SOP-8) Rev. B.02 1. GND 2. IN 3. OUT Package Type E: F: G: H: SOT-2X SOT-89 SOT-223 SOP Number of Pins A: 8 T: 3 V: 5 Output Voltage 080: 090: 100: 110: 120: 130: 140: 150: : : 420: 430: 0.8V 0.9V 1.0V 1.1V 1.2V 1.3V 1.4V 1.5V : : 4.2V 4.3V 1. IN 2. GND 3. EN 4. BYP 5. OUT 1. IN 2. GND 3. GND 4. OUT 5. NC 6. GND 7. GND 8. EN 7 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Absolute Maximum Ratings Parameter Maximum Unit Input Voltage -0.3 to 6 V EN Voltage -0.3 to 6 V Output Current PD/(V IN -V OUT) mA Output Voltage GND-0.3 to VIN +0.3 V HBM 2 kV MM 200 V ESD Classification Caution: Stress above the listed in absolute maximum ratings may cause permanent damage to the device. n Recommended Operating Conditions Parameter 8 Symbol Rating Unit Ambient Temperature Range TA - 40 to +85 o Junction Temperaturen Range TJ - 40 to +125 o Storage Temperaturen Range TSTG - 65 to +150 o C C C Rev. B.02 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Thermal Information Parameter Package Die Attach Symbol Maximum Conductive Epoxy 40 Non-Conductive Epoxy 46 Conductive Epoxy 25 Unit SOT-89 Thermal Resistance* (Junction to Case) SOT-223 Non-Conductive Epoxy θ JC 31 SOT-23 Non-Conductive Epoxy 140 SOT-25 Conductive Epoxy 81 SOP-8 Conductive Epoxy 60 Conductive Epoxy 180 Non-Conductive Epoxy 180 Conductive Epoxy 120 o C/W o C/W SOT-89 Thermal Resistance (Junction to Ambient) SOT-223 Non-Conductive Epoxy θJA 135 SOT-23 Non-Conductive Epoxy 280 SOT-25 Conductive Epoxy 260 SOP-8 Conductive Epoxy 150 Conductive Epoxy 550 Non-Conductive Epoxy 550 Conductive Epoxy 900 SOT-89 SOT-223 Internal Power Dissipation Non-Conductive Epoxy PD 800 SOT-23 Non-Conductive Epoxy 400 SOT-25 Conductive Epoxy 400 SOP-8 Conductive Epoxy 810 mW Maximum Juction Temperature 150 o C Lead Temperature (Soldering, 10Sec. )** 260 o C * Measure θJC on backside center of molding compound if IC has no tab. ** MIL-STD-202G 210F Rev. B.02 9 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Electrical Specifications VIN=VOUT(NOM) +1V, (for VOUT<2V, VIN=2.8V), IOUT=1mA, and COUT=1µF, CIN=1µF unless otherwise noted. Typical values are at TA=25oC. Parameter Input Voltage Output Accuracy Output Voltage Range Dropout Voltage (Note 1) Symbol Test Condition VIN VOUT,ACC IOUT=1mA VOUT VDROP Min Max Units 2.8 5.5 V -2.0 2.0 % 0.8 4.3 V IOUT =600mA, 0.8V≦VOUT(NOM)≦2.0V Note2 IOUT =600mA, 2.0V<VOUT(NOM)≦2.8V 850 IOUT=600mA, 2.8V<V OUT(NOM) Output Current Quiescent Current IOUT IQ Line Regulation ∆VOUT ×100% ∆VIN VOUT REGLINE Load Regulation ∆VOUT × 100% VOUT ∆I OUT 10 REGLOAD Typ 420 mV 650 600 mA IOUT=0mA 60 90 IOUT =1mA, 0.8V≦VOUT≦1.2V, 2.8V≦VIN ≦3.5V 0.125 0.25 IOUT=1mA, 1.2V<VOUT≦2.0V, 2.8V≦VIN ≦3.5V 0.1 0.2 IOUT=1mA, 2.0V<VOUT≦ 4.2V, VIN(MIN)≦VIN ≦VIN(MIN)+1V 0.05 0.1 IOUT=1mA, 4.2V<VOUT≦ 4.5V, VIN(MIN)≦VIN ≦5.5V 0.05 0.25 1mA≦IOUT ≦600mA 0.8V≦VOUT(NOM)≦1.2V 1.5 3 1mA≦IOUT ≦600mA 1.2V≦VOUT(NOM)≦2.0V 1.25 2.5 1mA≦IOUT ≦600mA 2.0V<VOUT(NOM) 1.0 2.0 µA %/V %/A Rev. B.02 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Electrical Specifications (Contd.) Parameter Power Supply Rejection Ration Symbol PSRR Test Condition COUT =1uF, VOUT=0.8V IOUT =10mA VIN=2.8V Min Typ F=100Hz 60 F=1KHz 60 F=10KHz 60 Max dB Output Voltage Noise eN IOUT=10mA, VOUT=0.8V, f=1Hz to 100KHz Enable High (Enabled) VEN,HI VIN(MIN)≦VIN ≦5.5V 1.4 VIN Enable Low (Shutdown) VEN,LO VIN(MIN)≦VIN ≦5.5V 0 0.4 IEN,HI VEN=VIN 8 IEN,LO VEN=0V 1 ISHDN VIN=5.0V, V EN=0V VOUT,SD IOUT=0.4mA, VEN =0 Output Current Limit ILIM VOUT =0.9 x VOUT(NOM) Short-Circuit Current ISC VOUT≦0.6V 300 Thermal Shutdown Temperature TSHDN Shutdown, temperature increasing 150 Thermal Shutdown Hysteresis TSHDN(HYS) Enable Input Bias Current Shutdown Current Shutdown Output Voltage µVRMS 100 0.1 Units V µA 1 µA 0.4 V Protection 750 mA o C 20 Note1: Dropout Voltage is measured at VOUT=VOUT(NOM)x98% Note2:For VOUT below 2.0V, Dropout Voltage is the Input(MIN) Voltage to Output Voltage differential. Rev. B.02 11 AME AME8855A n Detailed Description The AME8855 family of CMOS regulators contain a PMOS pass transistor, voltage reference, error amplifier, over-current protection thermal shutdown, and Power Good detection circuitry. The P-channel pass transistor receives data from the error amplifier, over-current shutdown, and thermal protection circuits. During normal operation, the error amplifier compares the output voltage to a precision reference. Over-current and Thermal shutdown circuits become active when the junction temperature exceeds 150oC, or the current exceeds 600mA. During thermal shutdown, the output voltage remains low. Normal operation is restored when the junction temperature drops more 20oC. High PSRR, Low Noise, 600mA CMOS Regulator Capacitor Selection and Regulator Stability The maximum output power of the AME8855 is limited by the maximum power dissipation of the package. By calculation the power dissipation of the package as a function of the input voltage, output voltage and output current, the maximum input voltage can be obtained. The maximum power dissipation should not exceed the package’ s maximum power rating. PMAX = (V IN(MAX) -V OUT) x IOUT Where: VIN(MAX) = maximum input voltage PMAX = maximum power dissipation of the package Capacitor Selection and Regulator Stability The AME8855 is stable with an output capacitor to ground of 1µF or greater. Ceramic capacitors have the lowest ESR, and will offer the best AC performance. Conversely, Aluminum Electrolytic capacitors exhibit the highest ESR, resulting in the poorest AC response. Unfortunately, large value ceramic capacitors are comparatively expensive. One option is to parallel a 0.1µF ceramic capacitor with a 10µF Aluminum Electrolytic. The benefit is low ESR, high capacitance, and low overall cost. A second capacitor is recommended between the input and ground to stabilize V IN. The input capacitor should be at least 0.1µF to have a beneficial effect. Enable Pin The Enable Pin is pull-low. When activated pulled low, the MOS pass transistor shuts off, and all internal circuits are powered down. In this state, the stand by current is less than 1µA. 12 Rev. B.02 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Characterization Curve Output Voltage 1.05 1.04 1.04 1.03 1.03 Output Voltage (V) Output Voltage (V) Output Voltage 1.05 1.02 1.01 1.00 0.99 0.98 V IN = 2.8V VOUT = 1V IOUT = 1mA 0.97 0.96 0.95 -40 -25 -10 +5 +20 +35 1.02 1.01 1.00 0.99 0.98 VIN = 2.8V VOUT = 1V IOUT = 600mA 0.97 0.96 0.95 -40 +50 +65 +80 +95 +110 +125 -25 -10 +50 +20 Temperature ( OC) 4.40 4.40 4.35 4.30 4.25 4.15 -40 VIN = 5.5V VOUT = 4.3V IOUT = 1mA -25 -10 +5 +20 +35 +50 +65 +80 +95 +110 +125 4.35 4.30 4.25 VIN = 5.5V VOUT = 4.3V IOUT = 600mA 4.20 4.15 -40 -25 -10 +5 Quiescent Current 90 70 60 50 40 30 VOUT = 1V 10 Quiescent Current (µA) 90 Quiescent Cu rren t (µA) 100 80 80 70 60 50 40 30 20 VOUT = 4.3V 10 -20 -10 +5 +20 +35 +50 +65 Temperature (OC) Rev. B.02 +65 +80 +95 +110 +125 Quiescent Current 100 0 -40 +20 +35 +50 Temperature ( OC) O Temperature ( C) 20 +65 +80 +95 +110 +125 Output Voltage 4.45 Outpu t Voltage (V) Output Voltage (V) Output Voltage 4.45 4.20 +35 +50 Temperature (O C) +80 95 +110 +125 0 -40 -25 -10 +5 +20 +35 +50 +65 +80 +95 +110 +125 Temperature ( OC) 13 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Characterization Curve (Contd.) Current Limit vs Input Voltage 1600 1400 1400 Current Limit (mA) Current Limit (mA) Current Limit vs Input Voltage 1600 1200 1200 1000 1000 800 800 VOUT = 1V 600 2.8 3.8 4.8 V OUT = 4.3V 600 5.5 5.3 5.4 Input Voltage (V) Dropout Voltage Stability vs. ESR vs. Load Current 700 Region of Stab le COUT ESR(Ω) 10.00 Dropout Voltage(mV) 600 500 400 300 200 VOUT = 4.3V 100 -40 -25 -10 +5 +20 +35 +50 +65 +80 +95 Unstable Range 1.00 0.10 Stable Range 0.01 0.005 + 110 VIN = 5V C IN = C OUT = 1µF / X7R 0.00 Temperature ( OC) 0 50 100 Unstable Range 150 200 800 Short Circuit Current (mA) 700 600 500 400 300 700 600 500 400 300 VOUT = 1V VOUT = 1V 2.8 3.8 Input Voltage (V) 14 300 Short Circuit Current Protection 800 200 250 Load Current(mA) Short Circuit Current Protection Short Circuit Current (mA) 5.5 Input Voltage (V) 4.8 5.5 200 5.5 5.3 Input Voltage (V) Rev. B.02 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Characterization Curve (Contd.) Line Transient Response Line Transient Response O TA = -40 OC, VOUT = 4.3V, I OUT = 10mA TA = -40 C,VOUT = 1V, IOUT = 10mA 5.5V V IN (1V/DIV) 5.5V VIN (1V/DIV) 4.8V 2.5V 20mV 20mV VOUT (20mV /DIV) VOUT (20mV/DIV) 0 0 -20mV -20mV 20µS / div 20µS / div Line Transient Response Line Transient Response TA = 25 OC,VOUT = 1V, I OUT = 10mA TA = 25 OC,VOUT = 4.3V, I OUT = 10mA 5.5V 5.5V VIN (1V/DIV) VIN (1V/DIV) 4.8V 2.5V VOUT 20mV 0 (20mV/DIV) VOUT (20mV/DIV) 20mV 0 20mV -20mV 20µS / div 20µS / div Line Transient Response Line Transient Response O O TA = 125 C, V OUT = 4.3V, IOUT = 10mA TA = 125 C, VOUT = 1V, I OUT = 10mA 5.5V 5.5V VIN (1V/DIV) VIN (1V/DIV) 4.8V 2.5V 20mV 20mV VOUT (20mV/DIV) 0 VOUT (20mV/DIV) 0 -20mV 20µS / div Rev. B.02 -20mV 20µS / div 15 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Characterization Curve (Contd.) Line Transient Response Line Transient Response TA = -40 OC, V OUT = 4.3V, IOUT = 600 mA O TA = -40 C, V OUT = 1V, IOUT = 600 mA 5.5V 5.5V VIN (1V/DIV) V IN (1V/DIV) 4.8V 2.5V 20mV 20mV VOUT (20mV/DIV) 0 VOUT (20mV/DIV) 0 -20mV -20mV 20µS / div 20µS / div Line Transient Response Line Transient Response O TA = 25OC, V OUT = 1V, IOUT = 600mA TA = 25 C, V OUT = 4.3V, IOUT = 600 mA 5.5V 5.5V 4.8V VIN (1V/DIV) 4.8V VIN (1V/DIV) 20mV 20mV VOUT (20mV/DIV) 0 VOUT (20mV/DIV) 0 -20mV -20mV 20µS / div 20µS / div Line Transient Response Line Transient Response O O TA = 125 C, VOUT = 4.3V, IOUT = 600mA TA = 125 C, VOUT = 1V, IOUT = 600 mA 5.5V 5.5V VIN (1V/DIV) VIN (1V/DIV) 4.8V 2.5V 40mV 20mV VOUT (20mV/DIV) 0 20mV VOUT (20mV/DIV) 0 -20mV -20mV 20µS / div 16 20µS / div -40mV Rev. B.02 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Characterization Curve (Contd.) Load Transient Response O TA = -40 C, V OUT = 1V, I OUT Load Transient Response O = 10~600 mA TA = -40 C, V OUT = 1V, I OUT = 10~600 mA 20mV V OUT (20mV/DIV) 0 IOUT (200mA/DIV) 20mV V OUT (20mV/DIV) 0 -20mV -20mV 600m A 600m A 10mA IOUT (200mA/DIV) 10mA Time (20µSec/DIV) Time (20µSec/DIV) Load Transient Response Load Transient Response O O TA =25 C, VOUT = 4.3V, IOUT = 10~600mA TA =25 C, VOUT = 1V, I OUT = 10~600 mA 20mV 20mV VOUT (20mV/DIV) 0 IOUT (200mA/DIV) V OUT (20mV/DIV) 0 -20mV -20mV 600m A 600m A 10m A IOUT (200mA/DIV) 10m A Time (20µSec/DIV) Time (20µSec/DIV) Load Transient Response Load Transient Response O O TA =125 C, VOUT = 1V, IOUT = 10~600mA TA =125 C, V OUT = 4.3V, IOUT = 10~600mA 20mV VOUT (20mV/DIV) 0 20mV V OUT (20mV/DIV) 0 -20mV -20mV 600m A IOUT (200mA/DIV) 10m A Time (20µSec/DIV) Rev. B.02 600m A IOUT (200mA/DIV) 10m A Time (20µSec/DIV) 17 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Characterization Curve (Contd.) Chip Enable Transient Response 1 Chip Enable Transient Response 1 V OUT = 1V I OUT = 0mA 2 2 VOUT = 4.3V IOUT = 0mA 10µS / DIV 40µS / DIV 1) EN= 2V/div 2) VOUT= 500mV/div 1) EN= 2V/div 2) VOUT= 2V/div Chip Enable Transient Response 1 Chip Enable Transient Response 1 VOUT = 4.3V IOUT = 600mA 2 VOUT = 1V IOUT = 600mA 2 40µS / DIV 10µS / DIV 1) EN= 1V/div 2) VOUT= 500mV/div 18 1) EN= 2V/div 2) VOUT= 2V/div Rev. B.02 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Characterization Curve (Contd.) Shut down curve Output Voltage 1 Shut down curve Output Voltage 1 2 VOUT = 1V IOUT = 0mA 2 V OUT = 1V I OUT = 600mA 40µS / DIV 40µS / DIV 1) EN= 1V/div 2) VOUT= 500mV/div 1) EN= 1V/div 2) VOUT= 500mV/div Shut down curve Output Voltage 1 Shut down curve Output Voltage 1 2 2 VOUT = 4.3V IOUT = 600 mA V OUT = 4.3V I OUT = 0mA 40µS / DIV 1) EN= 2V/div 2) VOUT= 2V/div Rev. B.02 20µS / DIV 1) EN= 2V/div 2) VOUT= 2V/div 19 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Characterization Curve (Contd.) PSRR vs Frequency 100 90 80 PSRR (dB) 70 60 50 40 30 20 VOUT = 1V IOUT = 10mA 10 0 100 1K 10K 100K 1M Frequency (Hz) 20 Rev. B.02 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Tape and Reel Dimension SOT-223 Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size SOT-223 12.0±0.1 mm 4.0±0.1 mm 2500pcs 330±1 mm SOP-8 Carrier Tape, Number of Components Per Reel and Reel Size Rev. B.02 Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size SOP-8 12.0±0.1 mm 4.0±0.1 mm 2500pcs 330±1 mm 21 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Tape and Reel Dimension (Contd.) SOT-89 Carrier Tape, Number of Components Per Reel and Reel Size 22 Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size SOT-89 12.0±0.1 mm 4.0±0.1 mm 1000pcs 180±1 mm Rev. B.02 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Tape and Reel Dimension (Contd.) SOT-23 P W AME AME PIN 1 Carrier Tape, Number of Components Per Reel and Reel Size Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size SOT-23 8.0±0.1 mm 4.0±0.1 mm 3000pcs 180±1 mm SOT-25 P W AME AME PIN 1 Carrier Tape, Number of Components Per Reel and Reel Size Rev. B.02 Package Carrier Width (W) Pitch (P) Part Per Full Reel Reel Size SOT-25 8.0±0.1 mm 4.0±0.1 mm 3000pcs 180±1 mm 23 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Package Dimension SOT-223 Top View Side View D B1 θ C 13 o(4X) H E PIN 1 K e Front View o 13 (4X) F A1 B SYMBOLS MILLIMETERS MIN MAX MIN MAX A1 0.01 0.10 0.0004 0.0039 B 0.60 0.84 0.0236 0.0330 B1 2.90 3.15 0.1140 0.1240 C 0.23 0.38 0.0091 0.0150 D 6.20 6.71 0.2441 0.2640 E 3.30 3.71 0.1299 0.1460 2.30 BSC e F 1.40 0.0906 BSC 1.80 0.0551 0.0709 H 6.70 7.30 0.2638 0.2874 K 1.665 1.669 0.0656 0.0657 θ 24 INCHES 0 o 10 o o 0 o 10 Rev. B.02 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Package Dimension (Contd.) SOP-8 Top View Side View C E H L PIN 1 θ D Front View 7 o (4X) e B A1 A A2 SYMBOLS INCHES MIN MAX MIN MAX A 1.35 1.75 0.0531 0.0689 A1 0.10 0.30 0.0039 0.0118 A2 1.473 REF 0.0580 REF B 0.33 0.51 0.0130 0.0201 C 0.17 0.25 0.0067 0.0098 D 4.70 5.33 0.1850 0.2098 E 3.80 4.00 0.1496 0.1575 e 1.27 BSC 0.0500 BSC L 0.40 1.27 0.0157 0.0500 H 5.80 6.30 0.2283 0.2480 y - 0.10 - 0.0039 θ Rev. B.02 MILLIMETERS o 0 8 o 0 o 8 o 25 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Package Dimension (Contd.) SOT-89 TOP VIEW SIDE VIEW BOTTOM VIEW D D1 H D2 E2 E 3' 10' A1 PIN 1 C S1 e SYMBOLS MILLIMETERS INCHES MAX MIN MAX 1.39 1.60 0.0547 0.0630 A MIN I A A1 FRONT VIEW 26 0.8 REF 0.0315 REF C 0.35 0.44 0.0138 0.0173 D 4.39 4.60 0.1728 0.1811 D1 1.35 1.83 0.0531 0.0720 E 2.28 2.60 0.0898 0.1024 I 0.32 0.56 0.0126 0.0220 e 3.00 REF 0.1181 REF H 0.70 REF 0.0276 REF S1 1.50 REF 0.0591 REF E2 2.05 2.60 0.0807 0.1024 D2 1.50 1.85 0.0591 0.0728 Rev. B.02 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Package Dimension (Contd.) SOT-25 Top View Side View D E H θ1 L PIN 1 S1 e A Front View A1 SYMBOLS b MILLIMETERS MIN MAX MIN MAX A 0.90 1.30 0.0354 0.0512 A1 0.00 0.15 0.0000 0.0059 b 0.30 0.55 0.0118 0.0217 D 2.70 3.10 0.1063 0.1220 E 1.40 1.80 0.0551 0.0709 1.90 BSC e H 2.60 θ1 S1 0.0748 BSC 3.00 0.37 BSC L Rev. B.02 INCHES 0 o 10 0.95 BSC 0.1024 0.1181 0.0146 BSC o 0 o 10 o 0.0374 BSC 27 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Package Dimension (Contd.) SOT-23 Top View Side View D E H θ1 L e PIN 1 b A1 A Front View SYMBOLS MILLIMETERS MIN MAX MIN MAX A 0.90 1.40 0.0354 0.0551 A1 0.00 0.15 0.0000 0.0059 b 0.30 0.50 0.0118 0.0197 D 2.70 3.10 0.1063 0.1220 E 1.40 1.80 0.0551 0.0709 1.90 BSC e H 2.40 θ1 0.0748 BSC 3.00 0.35BSC L 28 INCHES 0 o 10 0.0945 0.1181 0.0138 BSC o 0o 10o Rev. B.02 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Lead Pattern SOT-223 6.00 BSC 2.20 BSC 4.00 BSC 2.20 BSC 1.20 BSC 2.30 BSC 2.30 BSC Note: 1. Lead pattern unit description: BSC: Basic. Represents theoretical exact dimension or dimension target. 2. Dimensions in Millimeters. 3. General tolerance +0.05mm unless otherwise specified. Rev. B.02 29 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Lead Pattern (Contd.) SOP-8 7.400 BSC 3.000 BSC 1.270 BSC 3.810 BSC 0.600 BSC 2.200 BSC 5.200 BSC Note: 1. Lead pattern unit description: BSC: Basic. Represents theoretical exact dimension or dimension target. 2. Dimensions in Millimeters. 3. General tolerance +0.05mm unless otherwise specified. 30 Rev. B.02 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Lead Pattern (Contd.) SOT-89 2.600 BSC 4.400 BSC 3.200 BSC 1.400 BSC 2.800 BSC 1.900 BSC 45oC 1.800 BSC 1.600 BSC 3.000 BSC Note: 1. Lead pattern unit description: BSC: Basic. Represents theoretical exact dimension or dimension target. 2. Dimensions in Millimeters. 3. General tolerance +0.05mm unless otherwise specified. Rev. B.02 31 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Lead Pattern (Contd.) SOT-25 2.40 BSC 1.00 BSC 0.70 BSC 0.95 BSC 0.95 BSC 1.90 BSC Note: 1. Lead pattern unit description: BSC: Basic. Represents theoretical exact dimension or dimension target. 2. Dimensions in Millimeters. 3. General tolerance +0.05mm unless otherwise specified. 32 Rev. B.02 AME High PSRR, Low Noise, 600mA CMOS Regulator AME8855A n Lead Pattern (Contd.) SOT-23 2.4 0 BSC 1.00 BSC 0.80 BSC 1.90 BSC Note: 1. Lead pattern unit description: BSC: Basic. Represents theoretical exact dimension or dimension target. 2. Dimensions in Millimeters. 3. General tolerance +0.05mm unless otherwise specified. Rev. B.02 33 www.ame.com.tw E-Mail: [email protected] Life Support Policy: These products of AME, Inc. are not authorized for use as critical components in life-support devices or systems, without the express written approval of the president of AME, Inc. AME, Inc. reserves the right to make changes in the circuitry and specifications of its devices and advises its customers to obtain the latest version of relevant information. AME, Inc. , January 2013 Document: TM001-DS8855A-B.02 Corporate Headquarter AME, Inc. 8F, 12, WenHu St., Nei Hu Taipei, Taiwan. 114 Tel: 886 2 2627-8687 Fax: 886 2 2659-2989