Cypress CY7C1146V18-375BZI 18-mbit ddr-ii sram 2-word burst architecture (2.0 cycle read latency) Datasheet

CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
18-Mbit DDR-II+ SRAM 2-Word Burst
Architecture (2.0 Cycle Read Latency)
Features
Functional Description
■
18 Mbit density (2M x 8, 2M x 9, 1M x 18, 512K x 36)
■
300 MHz to 375 MHz clock for high bandwidth
■
2-Word burst for reducing address bus frequency
■
Double Data Rate (DDR) interfaces
(data transferred at 750 MHz) @ 375 MHz
■
Read latency of 2.0 clock cycles
■
Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
■
Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■
Data valid pin (QVLD) to indicate valid data on the output
■
Synchronous internally self-timed writes
■
Core VDD = 1.8V ± 0.1V; IO VDDQ = 1.4V to VDD[1]
HSTL inputs and Variable drive HSTL output buffers
■ Available in 165-Ball FBGA package (13 x 15 x 1.4 mm)
■ Offered in both Pb-free and non Pb-free packages
■
■
JTAG 1149.1-compatible test access port
■
Delay Lock Loop (DLL) for accurate data placement
The CY7C1146V18, CY7C1157V18, CY7C1148V18, and
CY7C1150V18 are 1.8V Synchronous Pipelined SRAMs
equipped with DDR-II+ architecture. The DDR-II+ consists of an
SRAM core with advanced synchronous peripheral circuitry.
Addresses for read and write are latched on alternate rising
edges of the input (K) clock. Write data is registered on the rising
edges of both K and K. Read data is driven on the rising edges
of K and K. Each address location is associated with two 8-bit
words (CY7C1146V18) or 9-bit words (CY7C1157V18) or 18-bit
words (CY7C1148V18) or 36-bit words (CY7C1150V18) that
burst sequentially into or out of the device.
Asynchronous inputs include output impedance matching input
(ZQ). Synchronous data outputs (Q, sharing the same physical
pins as the data inputs D) are tightly matched to the two output
echo clocks CQ/CQ, eliminating the need for separately
capturing data from each individual DDR SRAM in the system
design.
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
Configurations
With Read Cycle Latency of 2.0 cycles:
CY7C1146V18 – 2M x 8
CY7C1157V18 – 2M x 9
CY7C1148V18 – 1M x 18
CY7C1150V18 – 512K x 36
Selection Guide
375 MHz
333 MHz
300 MHz
Unit
Maximum Operating Frequency
375
333
300
MHz
Maximum Operating Current
1020
920
850
mA
Note
1. The QDR consortium specification for VDDQ is 1.5V + 0.1V. The Cypress QDR devices exceed the QDR consortium specification and are capable of supporting VDDQ
= 1.4V to VDD.
Cypress Semiconductor Corporation
Document Number: 001-06621 Rev. *C
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised June 21, 2007
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
K
K
DOFF
VREF
R/W
NWS[1:0]
CLK
Gen.
Write
Reg
Write Add. Decode
LD
Address
Register
Write
Reg
1M x 8 Array
20
1M x 8 Array
A(19:0)
Read Add. Decode
Logic Block Diagram (CY7C1146V18)
8
Output
Logic
Control
R/W
Read Data Reg.
16
Control
Logic
8
Reg.
Reg.
CQ
8
CQ
8
8
DQ[7:0]
8
Reg.
QVLD
K
K
DOFF
VREF
R/W
BWS[0]
CLK
Gen.
Write Add. Decode
LD
Address
Register
Write
Reg
Write
Reg
1M x 9 Array
20
1M x 9 Array
A(19:0)
Read Add. Decode
Logic Block Diagram (CY7C1157V18)
9
Output
Logic
Control
R/W
Read Data Reg.
18
Control
Logic
9
9
Reg.
Reg.
CQ
9
CQ
9
Reg.
9
DQ[8:0]
QVLD
Document Number: 001-06621 Rev. *C
Page 2 of 27
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
K
K
DOFF
VREF
R/W
BWS[1:0]
CLK
Gen.
Write
Reg
Write Add. Decode
LD
Address
Register
Write
Reg
512K x 18 Array
19
512K x 18 Array
A(18:0)
Read Add. Decode
Logic Block Diagram (CY7C1148V18)
18
Output
Logic
Control
R/W
Read Data Reg.
36
18
Control
Logic
Reg.
18
Reg.
18
Reg.
CQ
18
CQ
DQ[17:0]
18
QVLD
Logic Block Diagram (CY7C1150V18)
Write
Reg
DOFF
VREF
R/W
BWS[3:0]
CLK
Gen.
256K x 36 Array
K
K
256K x 36 Array
LD
Address
Register
Write
Reg
Read Add. Decode
18
Write Add. Decode
A(17:0)
36
Output
Logic
Control
R/W
Read Data Reg.
72
Control
Logic
36
36
Reg.
Reg.
Reg.
CQ
36
36
CQ
36
DQ[35:0]
QVLD
Document Number: 001-06621 Rev. *C
Page 3 of 27
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
Pin Configurations
165-Ball FBGA (13 x 15 x 1.4 mm) Pinout
CY7C1146V18 (2M x 8)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1
2
3
CQ
NC
NC/72M
A
4
NC
NC
R/W
A
NC
NC
NC
NC
NC
NC
VSS
VSS
NC
NC
DQ4
NC
NC
NC
NC
DOFF
NC
NC
VREF
NC
DQ5
VDDQ
NC
NC
NC
5
6
7
NWS1
NC/288M
K
K
NC/144M
A
VSS
A
VSS
VDDQ
VSS
VDDQ
VDD
VDDQ
VDDQ
VDDQ
NC
8
9
10
11
LD
A
A
NC/36M
CQ
NC
NC
DQ3
NWS0
A
VSS
VSS
VSS
NC
NC
NC
NC
NC
NC
VSS
VSS
VDDQ
NC
NC
DQ2
VSS
VDD
VDDQ
NC
NC
VDD
VDD
VDD
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
NC
VDDQ
NC
NC
VREF
DQ1
NC
ZQ
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
NC
DQ6
NC
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ0
NC
NC
NC
NC
NC
NC
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
NC
NC
NC
NC
NC
NC
NC
NC
DQ7
A
A
QVLD
A
A
NC
NC
NC
TDO
TCK
A
A
A
NC
A
A
A
TMS
TDI
CY7C1157V18 (2M x 9)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1
2
3
4
5
6
7
8
9
10
11
CQ
NC
NC/72M
A
R/W
NC
K
NC/144M
LD
A
NC/36M
CQ
NC
NC
A
NC/288M
K
BWS0
A
NC
NC
DQ3
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
VSS
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
DQ4
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ2
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
NC
DOFF
NC
NC
VREF
NC
DQ5
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
VDDQ
NC
NC
VREF
DQ1
NC
ZQ
NC
NC
NC
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
NC
NC
DQ6
NC
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ0
NC
NC
NC
NC
NC
NC
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
NC
NC
NC
NC
NC
NC
NC
NC
DQ7
A
A
QVLD
A
A
NC
NC
DQ8
TDO
TCK
A
A
A
NC
A
A
A
TMS
TDI
Document Number: 001-06621 Rev. *C
Page 4 of 27
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
Pin Configurations (continued)
165-Ball FBGA (13 x 15 x 1.4 mm) Pinout
CY7C1148V18 (1M x 18)
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
1
2
3
CQ
NC
NC/72M
A
DQ9
NC
NC
NC
NC
NC
DQ10
NC
4
5
6
7
R/W
A
BWS1
NC/288M
K
NC/144M
K
VSS
VSS
VSS
NC
VSS
BWS0
A
VSS
A
8
9
10
11
LD
A
A
NC/36M
CQ
NC
NC
DQ8
VSS
VSS
NC
NC
DQ7
NC
NC
NC
NC
NC
DQ11
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ6
NC
DQ12
NC
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
DQ5
NC
DOFF
NC
NC
VREF
NC
DQ13
VDDQ
NC
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
VDDQ
NC
NC
VREF
DQ4
NC
ZQ
NC
NC
NC
DQ14
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
DQ3
NC
DQ15
NC
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ2
NC
NC
NC
NC
NC
DQ16
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
NC
NC
DQ1
NC
NC
NC
NC
NC
DQ17
A
A
QVLD
A
A
NC
NC
DQ0
TDO
TCK
A
A
A
NC
A
A
A
TMS
TDI
CY7C1150V18 (512K x 36)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
CQ
NC
NC
NC
2
3
NC/144M NC/36M
4
DQ27
DQ18
R/W
A
NC
DQ29
DQ28
DQ19
VSS
VSS
5
6
BWS2
K
BWS3
A
VSS
K
NC
VSS
7
8
9
10
11
A
NC/72M
CQ
BWS1
BWS0
A
VSS
LD
A
NC
NC
DQ8
VSS
VSS
NC
NC
DQ17
NC
DQ7
DQ16
NC
NC
DQ20
VDDQ
VSS
VSS
VSS
VDDQ
NC
DQ15
DQ6
NC
DQ30
DQ21
VDDQ
VDD
VSS
VDD
VDDQ
NC
NC
DQ5
NC
DOFF
NC
DQ31
VREF
NC
DQ22
VDDQ
DQ32
VDDQ
VDDQ
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
VDDQ
VDDQ
NC
VDDQ
NC
NC
VREF
DQ13
DQ14
ZQ
DQ4
NC
NC
DQ23
VDDQ
VDD
VSS
VDD
VDDQ
NC
DQ12
DQ3
NC
DQ33
DQ24
VDDQ
VSS
VSS
VSS
VDDQ
NC
NC
DQ2
NC
NC
NC
DQ35
DQ34
DQ25
VSS
VSS
VSS
A
VSS
A
VSS
A
VSS
VSS
NC
NC
DQ11
NC
DQ1
DQ10
NC
NC
DQ26
A
A
QVLD
A
A
NC
DQ9
DQ0
TDO
TCK
A
A
A
NC
A
A
A
TMS
TDI
Document Number: 001-06621 Rev. *C
Page 5 of 27
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
Pin Definitions
Pin Name
IO
Pin Description
DQ[x:0]
Input Output- Data Input Output Signals. Inputs are sampled on the rising edge of K and K clocks when write
Synchronous operations are valid. These pins drive out the requested data when a read operation is active. Valid
data is driven out on the rising edge of both the K and K clocks when read operations are active.
When read access is deselected, Q[x:0] are automatically tri-stated.
CY7C1146V18 − DQ[7:0]
CY7C1157V18 − DQ[8:0]
CY7C1148V18 − DQ[17:0]
CY7C1150V18 − DQ[35:0]
LD
InputSynchronous Load. This input is brought LOW when a bus cycle sequence is to be defined. This
Synchronous definition includes address and read/write direction. All transactions operate on a burst of two data.
LD must meet the setup and hold times around edge of K.
NWS0, NWS1,
InputNibble Write Select 0, 1 − Active LOW.(CY7C1146V18 Only) Sampled on the rising edge of the K
Synchronous and K clocks when the write operation is active. It is used to select the nibble that is written into the
device NWS0 controls D[3:0] and NWS1 controls D[7:4].
All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write
Select causes the corresponding nibble of data to be ignored and not written into the device.
BWS0, BWS1,
BWS2, BWS3
InputByte Write Select 0, 1, 2, and 3 − Active LOW. Sampled on the rising edge of the K and K clocks
Synchronous when the Write operation is active. It is used to select the byte that is written into the device when
the current portion of the write operation is active. Bytes not written remain unaltered.
CY7C1157V18 − BWS0 controls D[8:0]
CY7C1148V18 − BWS0 controls D[8:0], and BWS1 controls D[17:9].
CY7C1148V18 − BWS0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3
controls D[35:27].
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
causes the corresponding byte of data to be ignored and not written into the device.
A
InputAddress Inputs. Sampled on the rising edge of the K clock during active read and write operations.
Synchronous These address inputs are multiplexed for both read and write operations. Internally, the device is
organized as 2M x 8 (two arrays each of1M x 8) for CY7C1146V18, 2M x 9 (two arrays each of 1M
x 9) for CY7C1157V18, 1M x 18 (two arrays each of 512K x 18) for CY7C1148V18, and 512K x 36
(two arrays each of 256K x 18) for CY7C1150V18. All the address inputs are ignored when the
appropriate port is deselected.
R/W
InputSynchronous Read/Write Input. When LD is LOW, this input designates the access type (read
Synchronous when R/W is HIGH, write when R/W is LOW) for loaded address. R/W must meet the setup and hold
times around edge of K.
QVLD
Valid Output
Indicator
Valid Output Indicator. The Q Valid indicates valid output data. QVLD is edge aligned with CQ and
CQ.
K
InputClock
Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising
edge of K.
K
InputClock
Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device
and to drive out data through Q[x:0] when in single clock mode.
CQ
Clock Output Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input
clock (K) of the DDR-II+. The timings for the echo clocks are shown in the “Switching Characteristics”
on page 22.
CQ
Clock Output Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input
clock (K) of the DDR-II+. The timings for the echo clocks are shown in the “Switching Characteristics”
on page 22.
ZQ
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the system data
bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, connect this pin directly to VDDQ, which enables
the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
Document Number: 001-06621 Rev. *C
Page 6 of 27
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
Pin Definitions (continued)
Pin Name
DOFF
IO
Pin Description
Input
DLL Turn Off − Active LOW. Connecting this pin to ground turns off the DLL inside the device. The
timings in the DLL turned off operation are different from those listed in this data sheet. For normal
operation, connect this pin to a pull up through a 10 KΩ or less pull up resistor. The device behaves
in DDR-I mode when the DLL is turned off. In this mode, operate the device at a frequency of up to
167 MHz with DDR-I timing.
TDO
Output
TCK
Input
TCK pin for JTAG.
TDI
Input
TDI pin for JTAG.
TMS
Input
TMS pin for JTAG.
NC
N/A
Not connected to the die. Tie to any voltage level.
NC/36M
N/A
Not connected to the die. Tie to any voltage level.
NC/72M
N/A
Not connected to the die. Tie to any voltage level.
NC/144M
N/A
Not connected to the die. Tie to any voltage level.
NC/288M
N/A
Not connected to the die. Tie to any voltage level.
VREF
VDD
VSS
VDDQ
InputReference
TDO for JTAG.
Reference Voltage Input. Static input used to set the reference level for HSTL inputs, Outputs, and
AC measurement points.
Power Supply Power supply inputs to the core of the device.
Ground
Ground for the device.
Power Supply Power supply inputs for the outputs of the device.
Document Number: 001-06621 Rev. *C
Page 7 of 27
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
Functional Overview
The CY7C1146V18, CY7C1157V18, CY7C1148V18, and
CY7C1150V18 are synchronous pipelined Burst SRAMs
equipped with a DDR interface.
Accesses are initiated on the rising edge of the positive input
clock (K). All synchronous input and output timings refer to the
rising edge of the Input clocks (K/K).
All synchronous data inputs (D[x:0]) pass through input registers
controlled by the rising edge of the input clocks (K/K). All
synchronous data outputs (Q[x:0]) pass through output registers
controlled by the rising edge of the input clocks (K/K) as well.
All synchronous control (R/W, LD, BWS[0:X]) inputs pass through
input registers controlled by the rising edge of the input clock (K).
CY7C1148V18 is described in the following sections. The same
basic descriptions apply to CY7C1146V18, CY7C1157V18, and
CY7C1150V18.
Read Operations
The CY7C1148V18 is organized internally as a single array of
1M x 18. Accesses are completed in a burst of two sequential
18-bit data words. Read operations are initiated by asserting
R/W HIGH and LD LOW at the rising edge of the positive input
clock (K). The address presented to Address inputs are stored in
the read address register. Following the next two K clock rise the
corresponding 18-bit word of data from this address location is
driven onto the Q[17:0] using K as the output timing reference. On
the subsequent rising edge of K the next 18-bit data word from
the address location generated by the burst counter is driven
onto the Q[17:0]. The requested data is valid 0.45 ns from the
rising edge of the input clock (K/K). To maintain the internal logic,
each read access must be enabled to complete. Initiate read
accesses on every rising edge of the positive input clock (K).
When read access is deselected, the CY7C1148V18 first
completes the pending read transactions. Synchronous internal
circuitry automatically tri-states the outputs following the next
rising edge of the positive Input clock (K). This enables a
seamless transition between devices without the insertion of wait
states in a depth expanded memory.
Write Operations
Write operations are initiated by asserting R/W LOW and LD
LOW at the rising edge of the positive input clock (K). The
address presented to Address inputs is stored in the write
address register. On the following K clock rise the data presented
to D[17:0] is latched and stored into the 18-bit Write Data register
provided BWS[1:0] are both asserted active. On the subsequent
rising edge of the Negative Input Clock (K) the information
presented to D[17:0] is also stored into the Write Data register
provided BWS[1:0] are both asserted active. The 36 bits of data
is then written into the memory array at the specified location.
Initiate write accesses on every rising edge of the positive input
clock (K). This pipelines the data flow such that 18 bits of data
transfers into the device on every rising edge of the input clocks
(K and K).
When write access is deselected, the device ignores all inputs
after the pending write operations are completed.
Document Number: 001-06621 Rev. *C
Byte Write Operations
Byte Write operations are supported by the CY7C1148V18. A
write operation is initiated as described in the Write Operations.
The bytes that are written are determined by BWS0 and BWS1
which are sampled with each set of 18-bit data word. Asserting
the appropriate Byte Write Select input when the data portion of
a write enables the data presented to be latched and written into
the device. Deasserting the Byte Write Select input when the
data portion of a write enables the data stored in the device for
that byte to remain unaltered. Use this feature to simplify
read/modify/write operations to a Byte Write operation.
Double Data Rate Operation
The CY7C1148V18 enables high-performance operation
through high clock frequencies (achieved through pipelining) and
double data rate mode of operation. The CY7C1148V18 requires
two No Operation (NOP) cycle when transitioning from a read to
a write cycle. At higher frequencies, some applications may
require a third NOP cycle to avoid contention.
If a read occurs after a write cycle, address and data for the write
are stored in registers. The write information must be stored
because the SRAM cannot perform the last word write to the
array without conflicting with the read. The data stays in this
register until the next write cycle occurs. On the first write cycle
after the read(s), the stored data from the earlier write is written
into the SRAM array. This is called a Posted Write.
If a Read is performed on the same address on which a write is
performed in the previous cycle, the SRAM reads out the most
current data. The SRAM does this by bypassing the memory
array and reading the data from the registers.
Depth Expansion
Depth expansion requires replicating the LD control signal for
each bank. All other control signals can be common between
banks as appropriate.
Programmable Impedance
An external resistor, RQ, must be connected between the ZQ pin
on the SRAM and VSS to allow the SRAM to adjust its output
driver impedance. The value of RQ must be 5x the value of the
intended line impedance driven by the SRAM. The allowable
range of RQ to guarantee impedance matching with a tolerance
of ±15% is between 175Ω and 350Ω, with VDDQ = 1.5V. The
output impedance is adjusted every 1024 cycles upon power up
to account for drifts in supply voltage and temperature.
Echo Clocks
Echo clocks are provided on the DDR-II+ to simplify data capture
on high-speed systems. Two echo clocks are generated by the
DDR-II+. CQ is referenced with respect to K and CQ is referenced with respect to K. These are free-running clocks and are
synchronized to the Input clock of the DDR-II+. The timings for
the echo clocks are shown in the “Switching Characteristics” on
page 22.
Valid Data Indicator (QVLD)
QVLD is provided on the DDR-II+ to simplify data capture on high
speed systems. The QVLD is generated by the DDR-II+ device
along with Data output. This signal is also edge-aligned with the
Page 8 of 27
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
echo clock and follows the timing of any data pin. This signal is
asserted half a cycle before valid data arrives.
DDR-I mode (with 1.0 cycle latency and a longer access time).
For more information, refer to the application note, “DLL Considerations in QDRII/DDRII/QDRII+/DDRII+”. The DLL can also be
reset by slowing or stopping the input clocks K and K for a
minimum of 30 ns. However, it is not necessary for the DLL to be
reset in order to lock to the desired frequency. During Power up,
when the DOFF is tied HIGH, the DLL gets locked after 2048
cycles of stable clock.
DLL
These chips utilize a Delay Lock Loop (DLL) that is designed to
function between 120 MHz and the specified maximum clock
frequency. The DLL may be disabled by applying ground to the
DOFF pin. When the DLL is turned off, the device behaves in
Application Example
Figure 1 shows two DDR-II+ used in an application.
Figure 1. Application Example
DQ
A
SRAM#1
LD
R/W
ZQ
CQ/CQ
K K
DQ
A
R = 250ohms
SRAM#2
LD
R/W
ZQ
CQ/CQ
K K
R = 250ohms
DQ
Addresses
BUS
MASTER Cycle Start
R/W
(CPU or ASIC)
Source CLK
Source CLK
Echo Clock1/Echo Clock1
Echo Clock2/Echo Clock2
Truth Table
The truth table for the CY7C1146V18, CY7C1157V18, CY7C1148V18, and CY7C1150V18 follows. [3, 4, 5, 6, 7, 8]
Operation
K
LD
R/W
Write Cycle:
Load address; wait one cycle; input write data on consecutive
K and K rising edges.
L–H
L
L
D(A) at K (t + 1) ↑
D(A + 1) at K (t + 1) ↑
Read Cycle: (2.0 cycle latency)
Load address; wait two cycle; read data on consecutive K and
K rising edges.
L–H
L
H
Q(A) at K (t + 2)↑
Q(A + 1) at K (t + 2) ↑
NOP: No Operation
L–H
H
X
High-Z
High-Z
Stopped
X
X
Previous State
Previous State
Standby: Clock Stopped
DQ
DQ
Notes
2. The above application shows two DDR-II+ used.
3. X = “Don’t Care,” H = Logic HIGH, L = Logic LOW, ↑ represents rising edge.
4. Device powers up deselected and the outputs in a tri-state condition.
5. “A” represents address location latched by the devices when transaction was initiated and A + 1 represents the addresses sequence in the burst.
6. “t” represents the cycle at which a Read/Write operation is started. t + 1 and t + 2 are the first and second clock cycles succeeding the “t” clock cycle.
7. Data inputs are registered at K and K rising edges. Data outputs are delivered on K and K rising edges.
8. It is recommended that K = K = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line charging symmetrically.
Document Number: 001-06621 Rev. *C
Page 9 of 27
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
Write Cycle Descriptions
The write cycle descriptions of CY7C1146V18 and CY7C1148V18 follows. [3, 9]
BWS0/ BWS1/
K
K
L
L–H
–
L
L
–
L
H
L–H
L
H
–
H
L
L–H
H
L
–
H
H
L–H
H
H
–
NWS0
NWS1
L
Comments
When the Data portion of a write sequence is active:
CY7C1146V18 − both nibbles (D[7:0]) are written into the device,
CY7C1148V18 − both bytes (D[17:0]) are written into the device.
L – H When the Data portion of a write sequence is active:
CY7C1146V18 − both nibbles (D[7:0]) are written into the device,
CY7C1148V18 − both bytes (D[17:0]) are written into the device.
–
When the Data portion of a write sequence is active:
CY7C1146V18 − only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C1148V18 − only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
L – H When the Data portion of a write sequence is active:
CY7C1146V18 − only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C1148V18 − only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
–
When the Data portion of a write sequence is active:
CY7C1146V18 − only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C1148V18 − only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
L – H When the Data portion of a write sequence is active:
CY7C1146V18 − only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C1148V18 − only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
–
No data is written into the devices when this portion of a write operation is active.
L – H No data is written into the devices when this portion of a write operation is active.
The write cycle descriptions of CY7C1146V18 follows. [3, 9]
BWS0
K
K
Comments
L
L–H
–
When the Data portion of a write sequence is active, the single byte (D[8:0]) is written into the device.
L
–
L–H
When the Data portion of a write sequence is active, the single byte (D[8:0]) is written into the device.
H
L–H
–
No data is written into the device when this portion of a write operation is active.
H
–
L–H
No data is written into the device when this portion of a write operation is active.
Note
9. Is based on a Write cycle was initiated in accordance with the Write Cycle Description Truth Table. Alter BWS0, BWS1, BWS2, and BWS3 on different portions of a Write
cycle, as long as the setup and hold requirements are achieved.
Document Number: 001-06621 Rev. *C
Page 10 of 27
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
The write cycle descriptions of CY7C1148V18 follows, [3, 9]
BWS0
BWS1
BWS2
BWS3
K
K
L
L
L
L
L–H
–
L
L
L
L
–
L
H
H
H
L–H
L
H
H
H
–
H
L
H
H
L–H
H
L
H
H
–
H
H
L
H
L–H
H
H
L
H
–
H
H
H
L
L–H
H
H
H
L
–
H
H
H
H
L–H
H
H
H
H
–
Document Number: 001-06621 Rev. *C
Comments
When the Data portion of a write sequence is active, all four bytes (D[35:0]) are
written into the device.
L – H When the Data portion of a write sequence is active, all four bytes (D[35:0]) are
written into the device.
–
When the Data portion of a write sequence is active, only the lower byte (D[8:0]) is
written into the device. D[35:9] remains unaltered.
L – H When the Data portion of a write sequence is active, only the lower byte (D[8:0]) is
written into the device. D[35:9] remains unaltered.
–
When the Data portion of a write sequence is active, only the byte (D[17:9]) is written
into the device. D[8:0] and D[35:18] remains unaltered.
L – H When the Data portion of a write sequence is active, only the byte (D[17:9]) is written
into the device. D[8:0] and D[35:18] remains unaltered.
–
When the Data portion of a write sequence is active, only the byte (D[26:18]) is
written into the device. D[17:0] and D[35:27] remains unaltered.
L – H When the Data portion of a Write sequence is active, only the byte (D[26:18]) is
written into the device. D[17:0] and D[35:27] remains unaltered.
–
When the Data portion of a write sequence is active, only the byte (D[35:27]) is
written into the device. D[26:0] remains unaltered.
L – H When the Data portion of a write sequence is active, only the byte (D[35:27]) is
written into the device. D[26:0] remains unaltered.
–
No data is written into the device when this portion of a write operation is active.
L – H No data is written into the device when this portion of a write operation is active.
Page 11 of 27
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
IEEE 1149.1 Serial Boundary Scan (JTAG)
These SRAMs incorporate a serial boundary scan test access
port (TAP) in the FBGA package. This part is fully compliant with
IEEE Standard 1149.1-2001. The TAP operates using JEDEC
standard 1.8V IO logic levels.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, TCK must be tied LOW
(VSS) to prevent clocking of the device. TDI and TMS are internally pulled up and may be unconnected. They may alternately
be connected to VDD through a pull up resistor. TDO must be left
unconnected. Upon power up, the device comes up in a reset
state which does not interfere with the operation of the device.
Test Access Port—Test Clock
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Test Mode Select
The TMS input is used to give commands to the TAP controller
and is sampled on the rising edge of TCK. It is allowable to leave
this pin unconnected if the TAP is not used. The pin is pulled up
internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI pin is used to serially input information into the registers
and connect to the input of any of the registers. The register
between TDI and TDO is chosen by the instruction that is loaded
into the TAP instruction register. For more information on loading
the instruction register, see the “TAP Controller State Diagram”
on page 14. TDI is internally pulled up and unconnected if the
TAP is unused in an application. TDI is connected to the most
significant bit (MSb) on any register.
Instruction Register
Serially load three-bit instructions into the instruction register.
This register is loaded when it is placed between the TDI and
TDO pins as shown in “TAP Controller Block Diagram” on
page 15. Upon power up, the instruction register is loaded with
the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state as described
in the previous section.
When the TAP controller is in the Capture IR state, the two least
significant bits are loaded with a binary “01” pattern to allow for
fault isolation of the board level serial test path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single-bit register that can be placed between TDI
and TDO pins. This allows data to be shifted through the SRAM
with minimal delay. The bypass register is set LOW (VSS) when
the BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all of the input and
output pins on the SRAM. Several no connect (NC) pins are also
included in the scan register to reserve pins for higher density
devices.
The boundary scan register is loaded with the contents of the
RAM Input and Output ring when the TAP controller is in the
Capture-DR state and is then placed between the TDI and TDO
pins when the controller is moved to the Shift-DR state. Use the
EXTEST, SAMPLE/PRELOAD, and SAMPLE Z instructions to
capture the contents of the Input and Output ring.
The “Boundary Scan Order” on page 18 show the order in which
the bits are connected. Each bit corresponds to one of the bumps
on the SRAM package. The MSb of the register is connected to
TDI, and the LSb is connected to TDO.
Test Data-Out (TDO)
Identification (ID) Register
The TDO output pin is used to serially clock data out from the
registers. The output is active depending upon the current state
of the TAP state machine (see Instruction codes). The output
changes on the falling edge of TCK. TDO is connected to the
least significant bit (LSB) of any register.
The ID register is loaded with a vendor-specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in the “Identification Register Definitions”
on page 17.
Performing a TAP Reset
A Reset is performed by forcing TMS HIGH (VDD) for five rising
edges of TCK. This RESET does not affect the operation of the
SRAM and may be performed while the SRAM is operating. At
power up, the TAP is reset internally to ensure that TDO comes
up in a High-Z state.
TAP Instruction Set
TAP Registers
Eight different instructions are possible with the three-bit
instruction register. All combinations are listed in the Instruction
Code table. Three of these instructions are listed as RESERVED
and must not be used. The other five instructions are described
in detail in the following section.
Registers are connected between the TDI and TDO pins and
allow data to be scanned into and out of the SRAM test circuitry.
Select only one register at a time through the instruction
registers. Data is serially loaded into the TDI pin on the rising
edge of TCK. Data is output on the TDO pin on the falling edge
of TCK.
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. When this state is active, instructions are shifted through
the instruction register through the TDI and TDO pins. To
execute the instruction after it is shifted in, the TAP controller
needs to be moved into the Update-IR state.
Document Number: 001-06621 Rev. *C
Page 12 of 27
CY7C1146V18
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CY7C1148V18
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IDCODE
The IDCODE instruction causes a vendor-specific, 32-bit code
to be loaded into the instruction register. It also places the
instruction register between the TDI and TDO pins and enables
the IDCODE to be shifted out of the device when the TAP
controller enters the Shift-DR state. The IDCODE instruction is
loaded into the instruction register upon power up or whenever
the TAP controller is supplied a test logic reset state.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register to
be connected between the TDI and TDO pins when the TAP
controller is in a Shift-DR state. The SAMPLE Z command puts
the output bus into a High-Z state until the next command is
supplied when the Update IR state is active.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. When
the SAMPLE/PRELOAD instructions are loaded into the instruction register and the TAP controller is in the Capture-DR state, a
snapshot of data on the inputs and output pins is captured in the
boundary scan register.
The user must be aware that the TAP controller clock can only
operate at a frequency up to 20 MHz, while the SRAM clock
operates more than an order of magnitude faster. Because there
is a large difference in the clock frequencies, it is possible that
when the Capture-DR state is active, an input or output undergoes a transition. The TAP may then try to capture a signal while
in transition (metastable state). This does not harm the device,
but there is no guarantee as to the value that is captured. Repeatable results may not be possible.
To guarantee that the boundary scan register captures the correct value of a signal, the SRAM signal must be stabilized long
enough to meet the TAP controller's capture setup plus hold
times (tCS and tCH). The SRAM clock input might not be captured
correctly if there is no way in a design to stop (or slow) the clock
a SAMPLE/PRELOAD instruction. If this is an issue, it is still
possible to capture all other signals and simply ignore the value
of the CK and CK captured in the boundary scan register.
After the data is captured, it is possible to shift out the data by
putting the TAP into the Shift-DR state. This places the boundary
scan register between the TDI and TDO pins.
Document Number: 001-06621 Rev. *C
PRELOAD enables an initial data pattern to be placed at the
latched parallel outputs of the boundary scan register cells before the selection of another boundary scan test operation.
The shifting of data for the SAMPLE and PRELOAD phases can
occur concurrently when required — that is, while data captured
is shifted out, shift in the preloaded data.
BYPASS
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO pins. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
EXTEST
The EXTEST instruction enables the preloaded data to be driven
out through the system output pins. This instruction also selects
the boundary scan register to be connected for serial access
between the TDI and TDO in the shift-DR controller state.
EXTEST Output Bus Tri-State
IEEE Standard 1149.1 mandates that the TAP controller be able
to put the output bus into a tri-state mode.
The boundary scan register has a special bit located at bit 47.
When this scan cell, called the “extest output bus tri-state”, is
latched into the preload register the Update-DR state in the TAP
controller, it directly controls the state of the output (Q-bus) pins,
when the EXTEST is entered as the current instruction. When
HIGH, it enables the output buffers to drive the output bus. When
LOW, this bit places the output bus into a High-Z condition.
Set this bit by entering the SAMPLE/PRELOAD or EXTEST
command, and then shifting the desired bit into that cell, when
the Shift-DR state is active. When the Update-DR is active, the
value loaded into that shift-register cell latches into the preload
register. When the EXTEST instruction is entered, this bit directly
controls the output Q-bus pins. Note that this bit is preset HIGH
to enable the output when the device is powered up, and also
when the TAP controller is in the Test-Logic-Reset state.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
Page 13 of 27
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
TAP Controller State Diagram
Figure 2 shows the tap controller state diagram. [10]
Figure 2. Tap Controller State Diagram
1
TEST-LOGIC
RESET
0
0
TEST-LOGIC/
IDLE
1
1
SELECT
DR-SCAN
SELECT
IR-SCAN
0
1
0
1
CAPTURE-DR
CAPTURE-IR
0
0
0
SHIFT-DR
1
1
EXIT1-DR
1
EXIT1-IR
0
0
PAUSE-DR
0
0
PAUSE-IR
1
1
0
EXIT2-DR
EXIT2-IR
1
1
UPDATE-DR
1
0
SHIFT-IR
1
0
1
0
UPDATE-IR
1
0
Note
10. The 0/1 next to each state represents the value at TMS at the rising edge of TCK.
Document Number: 001-06621 Rev. *C
Page 14 of 27
CY7C1146V18
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CY7C1148V18
CY7C1150V18
TAP Controller Block Diagram
Figure 3. Tap Controller Block Diagram
0
Bypass Register
Selection
Circuitry
TDI
2
1
0
1
0
Instruction Register
31 30 29
.
.
2
Selection
Circuitry
TDO
Identification Register
106 .
.
.
.
2
1
0
Boundary Scan Register
TCK
TMS
TAP Controller
TAP Electrical Characteristics
The Tap Electrical Characteristics table over the operating range follows. [11, 12, 13]
Parameter
Description
Test Conditions
Min
Max
Unit
VOH1
Output HIGH Voltage
IOH = −2.0 mA
1.4
V
VOH2
Output HIGH Voltage
IOH = −100 µA
1.6
V
VOL1
Output LOW Voltage
IOL = 2.0 mA
0.4
V
VOL2
Output LOW Voltage
IOL = 100 µA
0.2
V
VIH
Input HIGH Voltage
VIL
Input LOW Voltage
IX
Input and Output Load Current
0.65 VDD VDD + 0.3
GND ≤ VI ≤ VDD
V
–0.3
0.35 VDD
V
−5
5
µA
Notes
11. These characteristics pertain to the TAP inputs (TMS, TCK, TDI, and TDO). Parallel load levels are specified in the Electrical Characteristics Table.
12. Overshoot: VIH(AC) < VDDQ + 0.35V (Pulse width less than tCYC/2), Undershoot: VIL(AC) > −0.3V (Pulse width less than tCYC/2).
13. All voltage referenced to ground.
Document Number: 001-06621 Rev. *C
Page 15 of 27
CY7C1146V18
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CY7C1148V18
CY7C1150V18
TAP AC Switching Characteristics
The Tap AC Switching Characteristics table over the operating range follows. [14, 15]
Parameter
Description
Min
Max
Unit
tTCYC
TCK Clock Cycle Time
50
ns
tTF
TCK Clock Frequency
tTH
TCK Clock HIGH
20
ns
tTL
TCK Clock LOW
20
ns
20
MHz
Setup Times
tTMSS
TMS Setup to TCK Clock Rise
5
ns
tTDIS
TDI Setup to TCK Clock Rise
5
ns
tCS
Capture Setup to TCK Rise
5
ns
Hold Times
tTMSH
TMS Hold after TCK Clock Rise
5
ns
tTDIH
TDI Hold after Clock Rise
5
ns
tCH
Capture Hold after Clock Rise
5
ns
Output Times
tTDOV
TCK Clock LOW to TDO Valid
tTDOX
TCK Clock LOW to TDO Invalid
10
ns
0
ns
TAP Timing and Test Condition
The Tap Timing and Test Conditions for the CY7C1146V18, CY7C1157V18, CY7C1148V18, and CY7C1150V18 follows. [15]
Figure 4. TAP Timing and Test Conditions
0.9V
ALL INPUT PULSES
50Ω
1.8V
0.9V
TDO
0V
Z0 = 50Ω
(a)
CL = 20 pF
tTH
GND
tTL
Test Clock
TCK
tTMSH
tTMSS
tTCYC
Test Mode Select
TMS
tTDIS
tTDIH
Test Data In
TDI
Test Data Out
TDO
tTDOV
tTDOX
Notes
14. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
15. Test conditions are specified using the load in TAP AC test conditions. tR/tF = 1 ns
Document Number: 001-06621 Rev. *C
Page 16 of 27
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
Identification Register Definitions
Value
Instruction Field
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
000
000
000
000
Cypress Device ID
(28:12)
11010111100000101
11010111100001101
11010111100010101
Cypress JEDEC ID
(11:1)
00000110100
00000110100
00000110100
00000110100
1
1
1
1
Revision Number
(31:29)
ID Register
Presence (0)
Description
Version number.
11010111100100101 Defines the type of
SRAM.
Allows unique
identification of
SRAM vendor.
Indicates the
presence of an ID
register.
Scan Register Sizes
Register Name
Bit Size
Instruction
3
Bypass
1
ID
32
Boundary Scan
107
Instruction Codes
Instruction
Code
Description
EXTEST
000
Captures the Input Output ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI
and TDO. This operation does not affect SRAM operation.
SAMPLE Z
010
Captures the Input Output contents. Places the boundary scan register between TDI
and TDO. Forces all SRAM output drivers to a High-Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures the Input Output ring contents. Places the boundary scan register between
TDI and TDO. Does not affect the SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect
SRAM operation.
Document Number: 001-06621 Rev. *C
Page 17 of 27
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Boundary Scan Order
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
Bit #
Bump ID
0
6R
27
11H
54
7B
81
3G
1
6P
28
10G
55
6B
82
2G
2
6N
29
9G
56
6A
83
1J
3
7P
30
11F
57
5B
84
2J
4
7N
31
11G
58
5A
85
3K
5
7R
32
9F
59
4A
86
3J
6
8R
33
10F
60
5C
87
2K
7
8P
34
11E
61
4B
88
1K
8
9R
35
10E
62
3A
89
2L
9
11P
36
10D
63
1H
90
3L
10
10P
37
9E
64
1A
91
1M
11
10N
38
10C
65
2B
92
1L
12
9P
39
11D
66
3B
93
3N
13
10M
40
9C
67
1C
94
3M
14
11N
41
9D
68
1B
95
1N
15
9M
42
11B
69
3D
96
2M
16
9N
43
11C
70
3C
97
3P
17
11L
44
9B
71
1D
98
2N
18
11M
45
10B
72
2C
99
2P
19
9L
46
11A
73
3E
100
1P
20
10L
47
Internal
74
2D
101
3R
21
11K
48
9A
75
2E
102
4R
22
10K
49
8B
76
1E
103
4P
23
9J
50
7C
77
2F
104
5P
24
9K
51
6C
78
3F
105
5N
25
10J
52
8A
79
1G
106
5R
26
11J
53
7A
80
1F
Document Number: 001-06621 Rev. *C
Page 18 of 27
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CY7C1157V18
CY7C1148V18
CY7C1150V18
Power Up Sequence in DDR-II+ SRAM
During Power Up, when the DOFF is tied HIGH, the DLL gets
locked after 2048 cycles of stable clock. DDR-II+ SRAMs must
be powered up and initialized in a predefined manner to prevent
undefined operations.
Power Up Sequence
■
Apply power with DOFF tied HIGH (All other inputs can be
HIGH or LOW)
❐ Apply VDD before VDDQ
❐ Apply VDDQ before VREF or at the same time as VREF
■
Provide stable power and clock (K, K) for 2048 cycles to lock
the DLL.
DLL Constraints
■
DLL uses K clock as its synchronizing input. The input must
have low phase jitter, which is specified as tKC Var.
■
The DLL functions at frequencies down to 120 MHz.
■
If the input clock is unstable and the DLL is enabled, then the
DLL may lock onto an incorrect frequency, causing unstable
SRAM behavior. To avoid this, provide 2048 cycles stable clock
to relock to the desired clock frequency.
Power Up Waveforms
~
~
Figure 5. Power Up Waveforms
K
~
~
K
Unstable Clock
> 2048 Stable Clock
Start Normal
Operation
Clock Start (Clock Starts after VDD/VDDQ is Stable)
VDD/VDDQ
DOFF
Document Number: 001-06621 Rev. *C
VDD/VDDQ Stable (< + 0.1V DC per 50 ns)
Fix HIGH (tie to VDDQ)
Page 19 of 27
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Maximum Ratings
Current into Outputs (LOW)......................................... 20 mA
Exceeding maximum ratings may shorten the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................ –65°C to + 150°C
Ambient Temperature with Power Applied –55°C to + 125°C
Static Discharge Voltage (MIL-STD-883, M 3015).... >2001V
Latch up Current..................................................... >200 mA
Operating Range
Supply Voltage on VDD Relative to GND .......–0.5V to + 2.9V
Supply Voltage on VDDQ Relative to GND..... –0.5V to + VDD
DC Applied to Outputs in High-Z .........–0.5V to VDDQ + 0.3V
DC Input Voltage[12] ............................... –0.5V to VDD + 0.3V
Range
Commercial
Industrial
Ambient
Temperature
VDD[16]
VDDQ[16]
0°C to +70°C
1.8 ± 0.1V
1.4V to
VDD
–40°C to +85°C
Electrical Characteristics
The DC Electrical Characteristics over the operating range follows. [13]
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
VDD
Power Supply Voltage
1.7
1.8
1.9
V
VDDQ
IO Supply Voltage
1.4
1.5
VDD
V
VOH
Output HIGH Voltage
Note 17
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
VOL
Output LOW Voltage
Note 18
VDDQ/2 – 0.12
VDDQ/2 + 0.12
V
VOH(LOW)
Output HIGH Voltage
IOH = –0.1 mA, Nominal Impedance
VDDQ – 0.2
VDDQ
V
VOL(LOW)
Output LOW Voltage
IOL = 0.1 mA, Nominal Impedance
VSS
0.2
V
VIH
Input HIGH Voltage
VREF + 0.1
VDDQ + 0.15
V
VIL
Input LOW Voltage
–0.15
VREF – 0.1
V
IX
Input Leakage Current
GND ≤ VI ≤ VDDQ
–2
2
µA
IOZ
Output Leakage Current
GND ≤ VI ≤ VDDQ, Output Disabled
–2
2
µA
0.95
V
VDD = Max, IOUT = 0 mA, 300 MHz
f = fmax = 1/tCYC
333 MHz
850
mA
920
mA
375 MHz
1020
mA
300 MHz
Max VDD, Both Ports
Deselected, VIN ≥ VIH or
VIN ≤ VIL f = fmax = 1/tCYC, 333 MHz
Inputs Static
375 MHz
250
mA
260
mA
290
mA
Voltage[19]
VREF
Input Reference
IDD
VDD Operating Supply
ISB1
Automatic Power Down
Current
Typical Value = 0.75V
0.68
0.75
AC Input Requirements
Over the operating range[12]
Parameter
Description
Test Conditions
Min
Typ
Max
Unit
VIH
Input HIGH Voltage
VREF + 0.2
–
VDDQ + 0.24
V
VIL
Input LOW Voltage
–0.24
–
VREF – 0.2
V
Notes
16. Power up: Is based on a linear ramp from 0V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
17. Outputs are impedance controlled. IOH = –(VDDQ/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
18. Outputs are impedance controlled. IOL = (VDDQ/2)/(RQ/5) for values of 175Ω < RQ < 350Ω.
19. VREF (min) = 0.68V or 0.46 VDDQ, whichever is larger, VREF (max) = 0.95V or 0.54 VDDQ, whichever is smaller.
Document Number: 001-06621 Rev. *C
Page 20 of 27
CY7C1146V18
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Capacitance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
Test Conditions
CIN
Input Capacitance
CCLK
Clock Input Capacitance
CO
Output Capacitance
TA = 25°C, f = 1 MHz,
VDD = 1.8V
VDDQ = 1.5V
Max
Unit
5
pF
6
pF
7
pF
165 FBGA
Package
Unit
17.2
°C/W
4.15
°C/W
Thermal Resistance
Tested initially and after any design or process change that may affect these parameters.
Parameter
Description
ΘJA
Thermal Resistance
(junction to ambient)
ΘJC
Thermal Resistance
(junction to case)
Test Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
AC Test Loads and Waveforms
Figure 6. AC Test loads and Waveforms
VREF = 0.75V
VREF
0.75V
VREF
OUTPUT
DEVICE
UNDER
TEST
ZQ
Z0 = 50Ω
RL = 50Ω
VREF = 0.75V
R = 50Ω
ALL INPUT PULSES
1.25V
0.75V
OUTPUT
DEVICE
UNDER
TEST ZQ
RQ =
250Ω
(a)
0.75V
INCLUDING
JIG AND
SCOPE
5 pF
[20]
0.25V
SLEW RATE= 2 V/ns
RQ =
250Ω
(b)
Note
20. Unless otherwise noted, test conditions are based upon a signal transition time of 2V/ns, timing reference levels of 0.75V, VREF = 0.75V, RQ = 250Ω, VDDQ = 1.5V,
input pulse levels of 0.25V to 1.25V, and output loading of the specified IOL/IOH and load capacitance shown in (a) of AC Test Loads.
Document Number: 001-06621 Rev. *C
Page 21 of 27
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Switching Characteristics
Over the operating range [20, 21]
Cypress Consortium
Parameter Parameter
Description
VDD(Typical) to the first Access[22]
tPOWER
375 MHz
333 MHz
300 MHz
Min Max Min Max Min Max
1
–
tCYC
tKHKH
K Clock Cycle Time
2.66 8.40
Unit
1
–
1
–
ms
3.0
8.40
3.3
8.40
ns
tKH
tKHKL
Input Clock (K/K) HIGH
0.425
–
0.425
–
0.425
–
tCYC
tKL
tKLKH
Input Clock (K/K) LOW
0.425
–
0.425
–
0.425
–
tCYC
tKHKH
tKHKH
K Clock Rise to K Clock Rise (rising edge to rising edge)
1.13
–
1.28
–
1.40
–
ns
Setup Times
tSA
tAVKH
Address Setup to K Clock Rise
0.4
–
0.4
–
0.4
–
ns
tSC
tIVKH
Control Setup to K Clock Rise (LD, R/W)
0.4
–
0.4
–
0.4
–
ns
tSCDDR
tIVKH
Double Data Rate Control Setup to Clock (K/K) Rise (BWS0, 0.28
BWS1, BWS2, BWS3)
–
0.28
–
0.28
–
ns
tSD
tDVKH
D[X:0] Setup to Clock (K/K) Rise
–
0.28
–
0.28
–
ns
0.28
Hold Times
tHA
tKHAX
Address Hold after K Clock Rise
0.4
–
0.4
–
0.4
–
ns
tHC
tKHIX
Control Hold after K Clock Rise (LD, R/W)
0.4
–
0.4
–
0.4
–
ns
tHCDDR
tKHIX
Double Data Rate Control Hold after Clock (K/K) Rise (BWS0, 0.28
BWS1, BWS2, BWS3)
–
0.28
–
0.28
–
ns
tHD
tKHDX
D[X:0] Hold after Clock (K/K) Rise
0.28
–
0.28
–
0.28
–
ns
Output Times
tCO
tCHQV
K/K Clock Rise to Data Valid
tDOH
tCHQX
Data Output Hold after K/K Clock Rise (Active to Active)
tCCQO
tCHCQV
K/K Clock Rise to Echo Clock Valid
tCQOH
tCHCQX
Echo Clock Hold after K/K Clock Rise
tCQD
tCQHQV
Echo Clock High to Data Valid
tCQDOH
tCQHQX
Echo Clock High to Data Invalid
tCQH
tCQHCQL
Output Clock (CQ/CQ) HIGH[23]
tCQHCQH
tCQHCQH
tCHZ
tCHQZ
CQ Clock Rise to CQ Clock Rise[23]
(rising edge to rising edge)
Clock (K/K) Rise to High-Z (Active to High-Z)[24, 25]
tCLZ
tCHQX1
Clock (K/K) Rise to
Low-Z[24, 25]
tQVLD
tQVLD
Echo Clock High to QVLD Valid[26]
–
0.45
–
0.45
–
0.45
ns
–0.45
–
–0.45
–
–0.45
–
ns
–
0.45
–
0.45
–
0.45
ns
–0.45
–
–0.45
–
–0.45
–
ns
–
0.2
–
0.2
–
0.2
ns
–0.2
–
–0.2
–
–0.2
–
ns
0.88
–
1.03
–
1.15
–
ns
0.88
–
1.03
–
1.15
–
ns
–
0.45
–
0.45
–
0.45
ns
–0.45
–
–0.45
–
–0.45
–
–0.20 0.20 –0.20 0.20 –0.20 0.20
ns
ns
DLL Timing
tKC Var
tKC Var
Clock Phase Jitter
–
0.20
–
0.20
–
0.20
ns
tKC lock
tKC lock
DLL Lock Time (K)
2048
–
2048
–
2048
–
Cycles
tKC Reset
tKC Reset
K Static to DLL Reset[27]
30
–
30
–
30
–
ns
Notes
21. When a part with a maximum frequency above 300 MHz is operating at a lower clock frequency, it requires the input timings of the frequency range in which it is being
operated and outputs data with the output timings of that frequency range.
22. This part has a voltage regulator internally; tPOWER is the time that the power needs to be supplied above VDD minimum initially before a read or write operation can
be initiated.
23. These parameters are extrapolated from the input timing parameters (tKHKH – 250 ps, where 250 ps is the internal jitter. An input jitter of 200 ps (tKC Var) is already
included in the tKHKH). These parameters are only guaranteed by design and are not tested in production.
24. tCHZ, tCLZ, are specified with a load capacitance of 5 pF as in (b) of AC Test Loads. Transition is measured ± 100 mV from steady-state voltage.
25. At any voltage and temperature tCHZ is less than tCLZ and tCHZ less than tCO.
26. tQVLD spec is applicable for both rising and falling edges of QVLD signal.
27. Hold to >VIH or <VIL.
Document Number: 001-06621 Rev. *C
Page 22 of 27
CY7C1146V18
CY7C1157V18
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CY7C1150V18
Switching Waveforms
Read/Write/Deselect Sequence
Figure 7. Waveform for 2.0 Cycle Read Latency[28, 29, 30]
NOP
1
READ
2
NOP
4
READ
3
NOP
5
NOP
6
WRITE
7
WRITE
8
READ
9
NOP
10
NOP
11
12
K
t KH
tCYC
t KL
t KHKH
K
LD
tSC tHC
R/W
A
A0
t SA t HA
A3
A2
A1
A4
t QVLD
tQVLD
t QVLD
QVLD
tHD
t HD
tSD
Q00
DQ
t
Q01 Q10
tCO
t CQOH
CQ
t CQOH
D20 D21
D30
D31
Q40 Q41
t CHZ
t DOH
CLZ
(Read Latency = 2.0 Cycles)
Q11
tSD
t CQD
t CCQO
t CCQO
t CQDOH
t CQH
t CQHCQH
CQ
DON’T CARE
UNDEFINED
Notes
28. Q00 refers to output from address A0. Q01 refers to output from the next internal burst address following A0, i.e., A0 + 1.
29. Outputs are disabled (High-Z) one clock cycle after a NOP.
30. The third NOP cycle between Read to Write transition is not necessary for correct device operation when Read Latency = 2.0 cycles; however at high frequency
operation, it may be required to avoid bus contention.
Document Number: 001-06621 Rev. *C
Page 23 of 27
CY7C1146V18
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CY7C1148V18
CY7C1150V18
Ordering Information
Not all of the speed, package and temperature ranges are available. Contact your local sales representative or
visit www.cypress.com for actual products offered.
Speed
(MHz)
375
Ordering Code
CY7C1146V18-375BZC
Package
Diagram
Package Type
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Operating
Range
Commercial
CY7C1157V18-375BZC
CY7C1148V18-375BZC
CY7C1150V18-375BZC
CY7C1146V18-375BZXC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1157V18-375BZXC
CY7C1148V18-375BZXC
CY7C1150V18-375BZXC
CY7C1146V18-375BZI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C1157V18-375BZI
CY7C1148V18-375BZI
CY7C1150V18-375BZI
CY7C1146V18-375BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1157V18-375BZXI
CY7C1148V18-375BZXI
CY7C1150V18-375BZXI
333
CY7C1146V18-333BZC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Commercial
CY7C1157V18-333BZC
CY7C1148V18-333BZC
CY7C1150V18-333BZC
CY7C1146V18-333BZXC
51-85180 165-Vall Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1157V18-333BZXC
CY7C1148V18-333BZXC
CY7C1150V18-333BZXC
CY7C1146V18-333BZI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C1157V18-333BZI
CY7C1148V18-333BZI
CY7C1150V18-333BZI
CY7C1146V18-333BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1157V18-333BZXI
CY7C1148V18-333BZXI
CY7C1150V18-333BZXI
Document Number: 001-06621 Rev. *C
Page 24 of 27
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
Ordering Information
(continued)
Not all of the speed, package and temperature ranges are available. Contact your local sales representative or
visit www.cypress.com for actual products offered.
Speed
(MHz)
300
Ordering Code
CY7C1146V18-300BZC
Package
Diagram
Package Type
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Operating
Range
Commercial
CY7C1157V18-300BZC
CY7C1148V18-300BZC
CY7C1150V18-300BZC
CY7C1146V18-300BZXC
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1157V18-300BZXC
CY7C1148V18-300BZXC
CY7C1150V18-300BZXC
CY7C1146V18-300BZI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm)
Industrial
CY7C1157V18-300BZI
CY7C1148V18-300BZI
CY7C1150V18-300BZI
CY7C1146V18-300BZXI
51-85180 165-Ball Fine Pitch Ball Grid Array (13 x 15 x 1.4 mm) Pb-Free
CY7C1157V18-300BZXI
CY7C1148V18-300BZXI
CY7C1150V18-300BZXI
Document Number: 001-06621 Rev. *C
Page 25 of 27
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
Package Diagram
Figure 8. 165-Ball FBGA (13 x 15 x 1.4 mm), 51-85180
BOTTOM VIEW
PIN 1 CORNER
TOP VIEW
Ø0.05 M C
Ø0.25 M C A B
PIN 1 CORNER
Ø0.50 -0.06 (165X)
+0.14
1
2
3
4
5
6
7
8
9
10
11
11
9
8
7
6
5
4
3
2
1
A
B
B
C
C
1.00
A
D
D
E
F
F
G
G
H
J
14.00
E
15.00±0.10
15.00±0.10
10
H
J
K
L
L
7.00
K
M
M
N
N
P
P
R
R
A
A
1.00
5.00
10.00
B
B
13.00±0.10
13.00±0.10
1.40 MAX.
0.15 C
0.53±0.05
0.25 C
0.15(4X)
NOTES :
SOLDER PAD TYPE : NON-SOLDER MASK DEFINED (NSMD)
PACKAGE WEIGHT : 0.475g
JEDEC REFERENCE : MO-216 / DESIGN 4.6C
PACKAGE CODE : BB0AC
0.35±0.06
0.36
SEATING PLANE
C
Document Number: 001-06621 Rev. *C
51-85180-*A
Page 26 of 27
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Document History Page
Document Title: CY7C1146V18/CY7C1157V18/CY7C1148V18/CY7C1150V18, 18-Mbit DDR-II+ SRAM 2-Word Burst
Architecture (2.0 Cycle Read Latency)
Document Number: 001-06621
REV.
ECN No.
Issue Date
Orig. of
Change
**
430351
See ECN
NXR
New data sheet
*A
461654
See ECN
NXR
Revised the MPNs from
CY7C1157BV18 to CY7C1146V18
CY7C1148BV18 to CY7C1157V18
CY7C1150BV18 to CY7C1148V18
Changed tTH and tTL from 40 ns to 20 ns, changed tTMSS, tTDIS, tCS, tTMSH, tTDIH,
tCH from 10 ns to 5 ns and changed tTDOV from 20 ns to 10 ns in TAP AC
Switching Characteristics table
Modified Power Up waveform
*B
497629
See ECN
NXR
Changed the VDDQ operating voltage to 1.4V to VDD in the Features section, in
Operating Range table and in the DC Electrical Characteristics table
Added foot note in page 1
Changed the Maximum rating of Ambient Temperature with Power Applied from
–10°C to +85°C to –55°C to +125°C
Changed VREF (max) spec from 0.85V to 0.95V in the DC Electrical Characteristics table and in the note below the table
Updated note 21 to specify Overshoot and Undershoot Spec
Updated ΘJA and ΘJC values
Removed x9 part and its related information
Updated foot note 24
*C
1175245
See ECN VKN/KKVTMP Converted from preliminary to final
Added x8 and x9 parts
Updated logic block diagram for x18 and x36 parts
Changed IDD values from 794 mA to 1020 mA for 375 MHz, 733 mA to 920 mA
for 333 MHz, 685 mA to 850 mA for 300 MHz
Changed ISB values from 227 mA to 290 mA for 375 MHz, 212 mA to 260 mA
for 333 MHz, 201 mA to 250 mA for 300 MHz
Changed tCYC(max) spec to 8.4 ns for all speed bins
Changed ΘJA value from 13.48 °C/W to 17.2 °C/W
Updated Ordering Information table
Description of Change
© Cypress Semiconductor Corporation, 2006-2007. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use
of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used
for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use
as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support
systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-06621 Rev. *C
Revised June 21, 2007
Page 27 of 27
QDR™ is a trademark of Cypress Semiconductor Corp. QDR RAMs and Quad Data Rate RAMs comprise a new family of products developed by Cypress, IDT, NEC, Renesas, and Samsung. All
product and company names mentioned in this document are the trademarks of their respective holders.