FS70KMJ-2 High-Speed Switching Use Nch Power MOS FET REJ03G1429-0200 (Previous: MEJ02G0071-0101) Rev.2.00 Aug 07, 2006 Features • • • • • • Drive voltage : 4 V VDSS : 100 V rDS(ON) (max) : 17 mΩ ID : 70 A Integrated Fast Recovery Diode (TYP.) : 115 ns Viso : 2000 V Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 2 1. Gate 2. Drain 3. Source 1 1 2 3 3 Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc. Maximum Ratings (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Isolation voltage Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg Viso Ratings 100 ±20 70 280 70 70 280 35 – 55 to +150 – 55 to +150 2000 Unit V V A A A A A W °C °C V — 2.0 g Mass Rev.2.00 Aug 07, 2006 page 1 of 6 Conditions VGS = 0 V VDS = 0 V L = 100 µH AC for 1 minute, Terminal to case Typical value FS70KMJ-2 Electrical Characteristics (Tch = 25°C) Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Symbol V(BR)DSS IGSS IDSS VGS(th) rDS(ON) rDS(ON) VDS(ON) | yfs | Ciss Coss Crss td(on) tr td(off) tf VSD Rth(ch-c) Min 100 — — 1.0 — — — — — — — — — — — — — Typ — — — 1.5 13 14 0.46 68 8200 1150 600 54 140 830 350 1.0 — Max — ±0.1 0.1 2.0 17 18 0.60 — — — — — — — — 1.5 3.57 Unit V µA mA V mΩ mΩ V S pF pF pF ns ns ns ns V °C/W trr — 115 — ns Reverse recovery time Rev.2.00 Aug 07, 2006 page 2 of 6 Test Conditions ID = 1 mA, VGS = 0 V VGS = ±20 V, VDS = 0 V VDS = 100 V, VGS = 0 V ID = 1 mA, VDS = 10 V ID = 35 A, VGS = 10 V ID = 35 A, VGS = 4 V ID = 35 A, VGS = 10 V ID = 35 A, VDS = 10 V VDS = 10 V, VGS = 0 V, f = 1MHz VDD = 50 V, ID = 35 A, VGS = 10 V, RGEN = RGS = 50 Ω IS = 35 A, VGS = 0 V Channel to case IS = 70 A, dis/dt = – 100 A/µs FS70KMJ-2 Performance Curves Maximum Safe Operating Area Power Dissipation Derating Curve 3 2 Drain Current ID (A) 40 30 20 10 0 0 50 150 200 tw = 10µs 102 7 5 3 2 100µs 1ms 101 7 5 3 2 100 7 5 3 Tc = 25°C Single Pulse DC 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Case Temperature Tc (°C) Drain-Source Voltage VDS (V) Output Characteristics (Typical) Output Characteristics (Typical) 6V VGS = 10V 5V 100 Drain Current ID (A) 100 4V 80 50 PD = 35W Tc = 25°C Pulse Test Tc = 25°C Pulse Test 60 3V 40 20 Drain Current ID (A) Power Dissipation PD (W) 50 40 3.5V VGS = 10V 5V 4V 30 3V 20 2.5V 10 PD = 35W 0 0.4 0.8 1.2 1.6 0.4 0.6 0.8 On-State Voltage vs. Gate-Source Voltage (Typical) On-State Resistance vs. Drain Current (Typical) 1.6 1.2 ID = 100A 0.8 70A 0.4 30A 2 4 6 8 Gate-Source Voltage VGS (V) Rev.2.00 0.2 Drain-Source Voltage VDS (V) Tc = 25°C Pulse Test 0 0 Drain-Source Voltage VDS (V) 2.0 0 0 2.0 Aug 07, 2006 page 3 of 6 10 Drain-Source On-State Resistance rDS(ON) (mΩ) Drain-Source On-State Voltage VDS(ON) (V) 0 1.0 20 Tc = 25°C Pulse Test 16 VGS = 4V 12 10V 8 4 0 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 Drain Current ID (A) FS70KMJ-2 Forward Transfer Admittance vs. Drain Current (Typical) Drain Current ID (A) 100 Tc = 25°C VDS = 10V Pulse Test 80 60 40 20 0 0 2 4 6 8 10 Forward Transfer Admittance | yfs | (S) Transfer Characteristics (Typical) Tch = 25°C f = 1MHz VGS = 0V Switching Time (ns) Capacitance C (pF) Ciss Coss Crss 2 100 0 10 104 7 5 3 2 2 3 4 5 7 101 2 3 4 5 7 102 Tch = 25°C VDD = 50V VGS = 10V RGEN = RGS = 50Ω td(off) 103 7 5 3 2 tf tr 102 7 5 3 2 td(on) 101 0 10 3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3 2 3 4 5 7 101 2 3 4 5 7 102 Drain-Source Voltage VDS (V) Drain Current ID (A) Gate-Source Voltage vs. Gate Charge (Typical) Source-Drain Diode Forward Characteristics (Typical) 100 VGS = 0V Pulse Test Tch = 25°C ID = 70A Source Current IS (A) Gate-Source Voltage VGS (V) TC = 25°C 75°C 125°C Switching Characteristics (Typical) 8 6 4 VDS = 20V 50V 80V 2 0 40 80 120 160 Gate Charge Qg (nC) Rev.2.00 101 7 5 4 3 Capacitance vs. Drain-Source Voltage (Typical) 10 0 2 Drain Current ID (A) 104 7 5 3 2 103 7 5 3 2 VDS = 10V Pulse Test Gate-Source Voltage VGS (V) 2 105 7 5 3 2 102 7 5 4 3 Aug 07, 2006 page 4 of 6 200 80 60 40 Tc = 125°C 75°C 25°C 20 0 0 0.4 0.8 1.2 1.6 Source-Drain Voltage VSD (V) 2.0 VGS = 10V ID = 35A Pulse Test 2 100 7 5 4 3 2 10–1 –50 0 50 100 150 4.0 VDS = 10V ID = 1mA 3.2 2.4 1.6 0.8 0 –50 0 100 150 Channel Temperature Tch (°C) Breakdown Voltage vs. Channel Temperature (Typical) Transient Thermal Impedance Characteristics VGS = 0V ID = 1mA 1.2 1.0 0.8 0.6 –50 0 50 100 150 101 7 5 D = 1.0 3 2 0.5 100 7 5 3 2 0.2 0.1 0.05 PDM 0.02 10–1 7 5 3 2 tw T 0.01 Single Pulse D= tw T 10–2 –4 10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102 Channel Temperature Tch (°C) Pulse Width tw (s) Switching Time Measurement Circuit Switching Waveform Vout Monitor Vin Monitor 90% D.U.T. RGEN RL Vin Vout 10% 10% 10% VDD RGS 90% td(on) Rev.2.00 50 Channel Temperature Tch (°C) 1.4 0.4 Threshold Voltage vs. Channel Temperature (Typical) Gate-Source Threshold Voltage VGS(th) (V) 101 7 5 4 3 Transient Thermal Impedance Zth(ch–c) (°C/W) Drain-Source On-State Resistance rDS(ON) (25°C) On-State Resistance vs. Channel Temperature (Typical) Drain-Source Breakdown Voltage V(BR)DSS (25°C) Drain-Source Breakdown Voltage V(BR)DSS (t°C) Drain-Source On-State Resistance rDS(ON) (t°C) FS70KMJ-2 Aug 07, 2006 page 5 of 6 tr 90% td(off) tf FS70KMJ-2 Package Dimensions Package Name TO-220FN JEITA Package Code RENESAS Code PRSS0003AB-A Previous Code MASS[Typ.] 2.0g 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ3.2 ± 0.2 3.6 ± 0.3 15 ± 0.3 10 ± 0.3 14 ± 0.5 Unit: mm 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 2.54 ± 0.25 Order Code Lead form Standard packing Quantity Standard order code Straight type Plastic Magazine (Tube) 50 Type name Lead form Plastic Magazine (Tube) 50 Type name – Lead forming code Note : Please confirm the specification about the shipping in detail. Rev.2.00 Aug 07, 2006 page 6 of 6 Standard order code example FS70KMJ-2 FS70KMJ-2-A8 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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