SavantIC Semiconductor Product Specification BD250/A/B/C Silicon PNP Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type BD249/A/B/C ·125 W at 25°C case temperature ·25 A continuous collector current PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS BD246 VCBO VCEO Collector-base voltage Collector-emitter voltage BD246A BD246B Collector emitter -70 -90 BD246C -115 BD246 -45 BD246A BD246B Emitter-base voltage UNIT -55 Open base BD246C VEBO VALUE -60 -80 V V -100 Open collector -5 V IC Collector current -25 A ICM Collector current-peak -40 A IB Base current -5 A PC Collector power dissipation 125 W Tj Junction temperature -65~150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case VALUE 1 UNIT /W SavantIC Semiconductor Product Specification BD250/A/B/C Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BD250 V(BR)CEO Collector-emitter breakdown voltage MIN TYP. MAX UNIT -45 BD250A -60 IC=-30mA ;IB=0 V BD250B -80 BD250C -100 VCEsat-1 Collector-emitter saturation voltage IC=-15A ;IB=-1.5A -1.8 V VCEsat-2 Collector-emitter saturation voltage IC=-25A ;IB=-5A -4.0 V VBE-1 Base-emitter on voltage IC=-15A ; VCE=-4V -1.6 V VBE-2 Base-emitter on voltage IC=-25A ; VCE=-4V -3.0 V ICEO Collector cut-off current -1.0 mA -1.0 mA BD250/250A VCE=-30V IB=0 BD250B/250C VCE=-60V IB=0 IEBO Emitter cut-off current VEB=-5V; IC=0 hFE-1 DC current gain IC=-1.5A ; VCE=-4V 25 hFE-2 DC current gain IC=-15A ; VCE=-4V 10 hFE-3 DC current gain IC=-25A ; VCE=-4V 5 Switching times ton Turn-on time toff Turn-off time IC=-5A; IB1=-IB2=-0.5A RL=5A 2 0.2 µs 0.4 µs SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3 BD250/A/B/C