Mitsubishi FS18SM-9 High-speed switching use Datasheet

MITSUBISHI Nch POWER MOSFET
FS18SM-9
HIGH-SPEED SWITCHING USE
FS18SM-9
OUTLINE DRAWING
Dimensions in mm
4.5
15.9MAX.
1.5
5.0
r
4
2
20.0
φ 3.2
2
19.5MIN.
4.4
1.0
q
w
5.45
e
5.45
0.6
2.8
4
wr
q GATE
w DRAIN
e SOURCE
r DRAIN
q
¡VDSS ................................................................................ 450V
¡rDS (ON) (MAX) .............................................................. 0.33Ω
¡ID .......................................................................................... 18A
e
TO-3P
APPLICATION
SMPS, DC-DC Converter, battery charger, power
supply of printer, copier, HDD, FDD, TV, VCR, personal computer etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
VDSS
VGSS
Drain-source voltage
Gate-source voltage
ID
IDM
PD
Drain current
Drain current (Pulsed)
Maximum power dissipation
Tch
Tstg
—
Channel temperature
Storage temperature
Weight
Conditions
VGS = 0V
VDS = 0V
Typical value
Ratings
Unit
450
±30
V
V
18
54
250
A
A
W
–55 ~ +150
–55 ~ +150
4.8
°C
°C
g
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS18SM-9
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
Gate-source threshold voltage
Drain-source on-state resistance
VDS (ON)
yfs
Ciss
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Coss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Limits
Test conditions
Turn-off delay time
Fall time
Source-drain voltage
Typ.
Max.
ID = 1mA, VGS = 0V
IG = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
450
±30
—
—
—
—
—
—
±10
V
V
µA
VDS = 450V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 9A, VGS = 10V
ID = 9A, VGS = 10V
ID = 9A, VDS = 10V
—
2
—
—
—
3
0.25
2.3
1
4
0.33
3.0
mA
V
Ω
V
6.0
—
—
—
9.0
2200
300
45
—
—
—
—
S
pF
pF
pF
—
—
—
—
40
80
200
80
—
—
—
—
ns
ns
ns
ns
—
1.5
2.0
V
—
—
0.50
°C/W
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 9A, VGS = 10V, RGEN = RGS = 50Ω
IS = 9A, VGS = 0V
Channel to case
Thermal resistance
Unit
Min.
PERFORMANCE CURVES
MAXIMUM SAFE OPERATING AREA
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
250
200
150
100
50
tw=10µs
101
7
5
3
2
100µs
100
7
5
3
2
10ms
1ms
DC
TC = 25°C
Single Pulse
10–1
0
0
50
100
150
7
5
200
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V
10V
8V
40
30
TC = 25°C
Pulse Test
20
6V
10
5V
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
PD = 250W
0
2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 2
CASE TEMPERATURE TC (°C)
50
DRAIN CURRENT ID (A)
7
5
3
2
20
VGS = 20V
10V
8V
16
PD = 250W
6V
12
TC = 25°C
Pulse Test
8
4
5V
0
0
4
8
12
16
20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS18SM-9
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
1.0
TC = 25°C
Pulse Test
32
24
16
ID = 35A
8
25A
18A
9A
0
0
8
12
16
4
8
12
16
3
2
101
7
5
TC = 25°C
75°C
125°C
3
2
100 0
10
20
2 3
5 7 101
2 3
5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
103
7
5
Ciss
103
7
5
Coss
102
7
5
Crss
3 Tch = 25°C
2 f = 1MHz
VGS = 0V
101
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
0.2
102
VDS = 10V
7 Pulse Test
5
5
3
2
20V
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
8
3
2
VGS = 10V
0.4
TRANSFER CHARACTERISTICS
(TYPICAL)
16
0
0.6
DRAIN CURRENT ID (A)
24
0
0.8
GATE-SOURCE VOLTAGE VGS (V)
TC = 25°C
VDS = 50V
Pulse Test
32
TC = 25°C
Pulse Test
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
20
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
40
4
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (Ω)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
40
3
2
102
7
5
td(off)
Tch = 25°C
VDD = 200V
VGS = 10V
RGEN = RGS = 50Ω
tf
tr
td(on)
3
2
101
100
2 3
5 7 101
2 3
5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS18SM-9
HIGH-SPEED SWITCHING USE
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
VDS = 100V
12
8
200V
400V
4
101
7
5
0
20
40
60
80
25°C
24
75°C
16
8
0
0.8
1.6
2.4
3.2
4.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
VGS = 10V
ID = 1/2ID
Pulse Test
100
7
5
3
2
–50
0
50
100
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
150
CHANNEL TEMPERATURE Tch (°C)
0.4
VGS = 0V
Pulse Test
GATE CHARGE Qg (nC)
3
2
10–1
TC = 125°C
32
0
100
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (t°C)
SOURCE CURRENT IS (A)
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE VBR (DSS) (25°C)
40
Tch = 25°C
ID = 18A
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – c) (°C/ W)
GATE-SOURCE VOLTAGE VGS (V)
20
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
3
2
100
7 D=1
5
3 0.5
2
0.2
–1
10
0.1
7
5
3
2
PDM
tw
T
0.05
D= tw
0.02
T
0.01
Single Pulse
10–2
10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
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