HiPerFASTTM IGBT IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1 VCES IC25 VCE(sat) tfi = = = = 600 V 76 A 1.7 V 200 ns Preliminary data (D1) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 76 A IC90 TC = 90°C 39 A ICM TC = 25°C, 1 ms 152 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load PC TC = 25°C ICM = 76 @ 0.8 VCES A 200 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque (M3) Md TO-268 (IXGT) G E TO-247 AD (IXGH) G 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 E C = Collector, TAB = Collector Features z z z Weight C (TAB) C G = Gate, E = Emitter, z TO-247 C (TAB) g g International standard packages JEDEC TO-247 AD & TO-268 High current handling capability Newest generation HDMOSTM process MOS Gate turn-on - drive simplicity Applications Symbol BVCES VGE(th) ICES Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. IC IC = 250 µA, VGE = 0 V = 750 µA 39N60B 39N60BD1 600 600 IC IC = 250 µA, VCE = VGE = 500 µA 39N60B 39N60BD1 2.5 2.5 VCE = 0.8 • VCES TJ = 25°C VGE = 0 V TJ = 125°C TJ = 125°C IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = I90, VGE = 15 V © 2003 IXYS All rights reserved 39N60B 39N60B 39N60BD1 V z z z z z z 5.0 5.0 V V 200 1 3 µA mA mA ±100 nA 1.7 V PFC circuits AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies Advantages z z High power density Very fast switching speeds for high frequency applications DS97548A(02/03) IXGH39N60B IXGT39N60B IXGH39N60BD1 IXGT39N60BD1 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs IC = IC90; VCE = 10 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2 % 19 28 S ∅P Cies 2750 pF 200 240 pF pF Cres 50 pF QG 110 Coes QGE VCE = 25 V, VGE = 0 V, f = 1 MHz 39N60B 39N60BD1 IC = IC90, VGE = 15 V, VCE = 0.5 VCES QGC td(on) Inductive load, TJ = 25°°C tri Eoff IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG td(on) Inductive load, TJ = 125°°C td(off) tfi tri Eon td(off) tfi Eoff TO-247 AD Outline 150 25 35 nC 40 75 nC 25 ns 30 Remarks: Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG ns 250 500 ns 200 360 ns 4.0 6.0 mJ 25 ns 30 ns 0.3 mJ 360 ns 350 ns 6.0 mJ IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 Ω nC RthJC e Dim. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC 0.62 K/W RthCK 0.25 Reverse Diode (FRED) K/W Characteristic Values (TJ = 25°C, unless otherwise specified) Symbol Test Conditions min. typ. VF IF = IC90, VGE = 0 V, Pulse test t ≤ 300 µs, duty cycle d ≤ 2 % IRM t rr IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs 6 VR = 100 V TJ = 100°C 100 IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C 25 TJ =150°C TJ = 25°C max. 1.6 2.5 V V A ns ns 0.9 K/W RthJC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH39N60B IXGT39N60B IXGH39N60BD1 IXGT39N60BD1 Fig. 1. Saturation Voltage Characteristics @ 25 Deg. C Fig. 2. Extended Output Characteristics @ 25 Deg. C 160 40 30 25 7V 20 15 9V 100 80 60 7V 40 5 20 5V 0 5V 0 0.4 0.8 1.2 1.6 VCE - Volts 2 2.4 0 1 2 3 4 5 V CE - Volts Fig. 3. Saturation Voltage Characteristics @ 125 Deg. C Fig. 4. Temperature Dependence of VCE(SAT) 100 1.45 V GE=15V 13V 11V 9V 60 V CE(SAT) - Normalized 80 7V 40 20 IC=78A 1.3 1.15 IC =39A 1 0.85 5V IC=19.5A 0 0.7 0 1 2 3 4 -50 5 V CE - Volts -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. BVCES & V (GE)TH vs. Junction Temperature Fig. 6. Admittance 100 1.2 V GE(TH) 1.1 80 BV CES IC - Amperes BVCES & V(GE)TH - Normalized 11V 120 10 IC - Amperes V GE=15V 13V 140 IC - Amperes 35 IC - Amperes 9V V GE=15V 13V 11V 1 60 40 TJ= 125°C 0.8 20 -40°C 0.7 0 0.9 -50 -25 0 25 50 75 100 125 150 TJ - Degrees Centigrade © 2003 IXYS All rights reserved 25°C 4 5 6 7 VGE - Volts 8 9 IXGH39N60B IXGT39N60B IXGH39N60BD1 IXGT39N60BD1 Fig. 7. Transconductance Fig. 8. Dependence of EOFF on IC 16 50 TJ = -40ºC 25ºC 125ºC 30 20 10 12 V CE = 480V 10 8 RG = 5 Ohms 6 2 0 20 40 60 80 IC - Amperes 100 120 10 18 16 14 EOFF - milliJoules TJ = 125ºC 10 V GE = 15V 8 V CE = 480V 6 IC = 39A 4 2 50 IC - Amperes 70 90 Solid lines - RG = 5 Ohms 15 Dashed lines - RG = 56 Ohms V GE = 15V 12 V CE = 480V IC = 78A 12 30 Fig. 10. Dependence of EOFF on Temperature Fig. 9. Dependence of EOFF on RG IC = 78A 9 IC = 39A 6 IC = 19.5A 3 IC = 19.5A 0 0 0 10 20 30 40 50 0 60 RG - Ohm s 25 50 75 100 125 150 TJ - Degrees Centigrades Fig. 12. Transient Thermal Response Fig. 11. Gate Charge 1 15 V CE=300V 12 IC=20A IG=10mA 9 R(TH)JC (C/W) VCE - Volts RG = 56 Ohms V GE = 15V 4 0 EOFF - millijoules TJ = 125ºC 14 EOFF - millijoules GFS - Siemens 40 6 0.1 3 0 0.01 0 20 40 60 80 QG - nanocoulombs 100 120 1 10 100 Pulse Width - milliseconds 1000 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXGH39N60B IXGT39N60B IXGH39N60BD1 IXGT39N60BD1 60 A 50 IF 30 1000 T = 100°C VJ nC VR = 300V 40 TVJ=150°C 30 25 IF= 60A IF= 30A IF= 15A 800 Qr TVJ= 100°C VR = 300V A IF= 60A IF= 30A IF= 15A IRM 20 600 15 TVJ=100°C 400 20 10 TVJ=25°C 200 10 0 0 1 0 100 3 V 2 5 0 A/µs 1000 -diF/dt VF Fig. 12 Forward current IF versus VF Fig. 13 Reverse recovery charge Qr versus -diF/dt 90 2.0 1.0 IRM 1.00 µs VFR tfr 0.75 tfr 80 IF= 60A IF= 30A IF= 15A 600 A/µs 800 1000 -diF/dt 400 Fig. 14 Peak reverse current IRM versus -diF/dt VFR 15 trr Kf 200 20 TVJ= 100°C IF = 30A V TVJ= 100°C VR = 300V ns 1.5 0 10 0.50 5 0.25 70 0.5 Qr 0.0 60 0 40 80 120 °C 160 0 0 200 TVJ 400 600 800 1000 A/µs 0 400 -diF/dt Fig. 15 Dynamic parameters Qr, IRM versus TVJ Fig. 16 Recovery time trr versus -diF/dt 1 K/W 0.00 600 A/µs 800 1000 diF/dt Fig. 17 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 0.1 ZthJC 0.01 0.001 0.00001 200 DSEP 29-06 0.0001 0.001 0.01 s 0.1 t Fig. 18 Transient thermal resistance junction to case © 2003 IXYS All rights reserved 1 Rthi (K/W) ti (s) 0.502 0.193 0.205 0.0052 0.0003 0.0162