SEMICONDUCTOR K3520PQ-XH TECHNICAL DATA Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The K3520PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration. 2000 S2 FEATURES ·Low on-state resistance RDS(ON)1 = 16mΩ MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17mΩ MAX (VGS=3.9V, IS=1.0A) RDS(ON)3 = 20mΩ MAX (VGS=3.5V, IS=1.0A) G2 1080 S1 G1 BOTTOM : COMMON DRAIN _10 m 180 + MAXIMUM RATING (Ta=25℃ Unless otherwise noted) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage VDSS 24 V Gate-Source Voltage VGSS ±12 V Storage Temperature Range Tstg -55～150 ℃ Equivalent Circuit D G1 Rg D G2 S1 2010. 4. 29 Rg S2 Revision No : 0 1/3 K3520PQ-XH Electrical Characteristics (Ta=25℃ Unless otherwise noted) CHARACTERISTIC SYMBOL TEST CONDITION Drain to Source Breakdown Voltage V(BR)DSS ID = 250μA, VGS = 0V Gate to Source Breakdown Voltage V(BR)GSS IG = ±100㎂, VDS = 0V MIN TYP MAX UNIT 24 - - V ±12 ±14 - V Drain Cut-off Current IDSS VDS = 24V, VGS = 0V - - 1.0 ㎂ Gate to Source Leakage Current IGSS VGS = ±12V, VDS = 0V - - ±10 ㎂ Gate to Source Threshold Voltage Vth VDS=VGS, ID=250 A 0.5 1.1 1.5 V VGS = 4.5V, ID = 1.0A - 12.5 16.0 mΩ VGS = 3.9V, ID = 1.0A - 13.5 17.0 mΩ VGS = 3.5V, ID = 1.0A - 15.0 20.0 mΩ f=1MHz - 3.0 - kΩ - 600 - - 115 - RDS(on) Drain to Source On Resistance Gate Resistance Rg Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 83 - Total Gate Charge Qg - 6.0 - Gate-Source Charge Qgs - 0.8 - Gate-Drain Charge Qgd - 2.5 - Source-Drain Forward Voltage VSD 0.50 0.70 0.86 2010. 4. 29 Revision No : 0 VDS = 10V, VGS = 0V, f=1MHz VDD=10V, VGS=3.9V, IS=4.0A VGS = 0V, IS = 1.0A pF nC V 2/3 K3520PQ-XH DIE INFORMATION 2000 S2 G2 1080 S1 G1 BOTTOM : COMMON DRAIN CONTENTS VALUE Wafer size 8 inch notch type Wafer thickness 180um Front Metal Aℓ-4um Back Metal Ti/Ni/Ag-1.4um Passivation Layer Yes Die Size (with scribe lane) 2000×1080㎛2 Scribe lane width 60㎛ Gate Pad Size 170×163㎛2 Die edge to gate Pad 93㎛ Die edge to Source Pad 70㎛ Gross Die(per Wafer) 13,470ea 2010. 4. 29 Revision No : 0 3/3