ECH8310 Ordering number : ENA1430 SANYO Semiconductors DATA SHEET ECH8310 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol Conditions Ratings VDSS VGSS ID IDP Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Unit --30 V ±20 V --9 A --60 A 1.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Conditions V(BR)DSS IDSS IGSS VDS=--30V, VGS=0V VGS=±16V, VDS=0V Forward Transfer Admittance VGS(off) | yfs | VDS=--10V, ID=--1mA VDS=--10V, ID=--4.5A Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--4.5A, VGS=--10V ID=--2A, VGS=--4.5V ID=--2A, VGS=--4.0V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 ID=--1mA, VGS=0V Marking : JM Ratings min typ max --30 Unit V --1.2 --1 μA ±10 μA --2.6 12 V S 9 13 17 mΩ 12 20 28 mΩ 13.5 23 32.5 mΩ Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network O1409PE TK IM TC-00002092 No. A1430-1/4 ECH8310 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr td(off) See specified Test Circuit. 45 ns ns Turn-OFF Delay Time Fall Time Total Gate Charge 134 87 ns VDS=--15V, VGS=--10V, ID=--9A 28 nC 4 nC 6 nC Qgs VDS=--15V, VGS=--10V, ID=--9A VDS=--15V, VGS=--10V, ID=--9A Diode Forward Voltage VSD IS=--9A, VGS=0V Package Dimensions --0.8 --1.2 V Electrical Connection unit : mm (typ) 7011A-002 8 7 6 5 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Top View 2.9 0.25 pF See specified Test Circuit. Qgd 0.15 5 2.3 0 t o 0.02 2.8 pF 250 See specified Test Circuit. Gate-to-Source Charge 1 2 3 4 Top view 4 1 0.65 0.3 0.9 0.25 pF 350 tf Qg Gate-to-Drain “Miller” Charge 8 1400 0.07 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : ECH8 Bot t om View Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --4.5A RL=3.3Ω VIN D PW=10μs D.C.≤1% VOUT G P.G ECH8310 50Ω S No. A1430-2/4 ECH8310 ID -- VDS --4 --3 --5 --4 --3 --2 --2 --1 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 80 --0.9 0 --1.0 --25°C --5 --6 25° C 2.5V V GS= -- Ta=7 5°C --6 Drain Current, ID -- A --7 --6.0 V Drain Current, ID -- A --7 VDS= --10V --8 --4.5 --8 ID -- VGS --9 --4.0 V V --3.5 V --10.0V--8.0V --9 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V IT15075 RDS(on) -- Ta 40 --3.5 IT14478 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 40 30 20 10 0 0 --2 --4 --6 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V Ta 2 ° 25 1.0 7 5 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 3 C 75° C 3 2 0.1 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 2 0 20 40 60 80 100 120 IS -- VSD 140 160 IT14480 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Ciss, Coss, Crss -- VDS --0.9 --1.0 IT14482 f=1MHz 3 7 5 3 tr td(on) 10 --20 VGS=0V 5 tf 2 --40 Diode Forward Voltage, VSD -- V VDD= --15V VGS= --10V td(off) 100 5 --0.01 7 5 3 2 --0.001 --0.2 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 10 IT14481 SW Time -- ID 3 15 Ambient Temperature, Ta -- °C 2 °C -25 = 20 2 3 A .0 = --2 , ID V 5 . = --4 VGS 4.5A I D= -, V 0 . = --10 VGS = VGS 0 --60 --16 VDS= --10V 10 7 5 25 IT14479 | yfs | -- ID 5 2.0A = -, ID V 0 . --4 --25 °C 50 30 C --4.5A 25° ID= --2A 60 35 Ta= 75° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 70 2 Ciss 1000 7 5 Coss 3 Crss 2 7 5 --0.1 2 3 5 7 --1.0 2 3 Drain Current, ID -- A 5 7 --10 2 IT14483 100 0 --2 --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT14484 No. A1430-3/4 ECH8310 VGS -- Qg VDS= --15V ID= --9A --8 --6 --4 --2 0 0 5 10 15 20 25 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 1.8 ASO 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --10 30 IT14485 --100 7 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 IDP= --60A PW≤10μs 1m s 10 ID= --9A DC ms 10 0m s op era tio Operation in this area is limited by RDS(on). n( Ta = 25 °C ) --0.1 7 5 Ta=25°C 3 2 Single pulse 2 --0.01 When mounted on ceramic substrate (900mm ×0.8mm) --0.01 2 3 5 7--0.1 2 3 5 7--1.0 2 3 5 7 --10 2 3 5 Drain-to-Source Voltage, VDS -- V IT14500 When mounted on ceramic substrate (900mm2×0.8mm) 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14486 Note on usage : Since the ECH8310 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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