UTC DTC114EG-T9S-K Npn digital transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
DTC114E
NPN SILICON TRANSISTOR
NPN DIGITAL TRANSISTOR
(BUILT- IN BIAS RESISTORS)
„
FEATURES
* Built-in bias resistors that implies easy ON/OFF applications.
* The bias resistors are thin-film resistors with complete isolation to
allow negative input.
„
EQUIVALENT CIRCUIT
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
DTC114EL-AE3-R
DTC114EG-AE3-R
DTC114EL-AL3-R
DTC114EG-AL3-R
DTC114EL-AN3-R
DTC114EG-AN3-R
DTC114EL-T92-B
DTC114EG-T92-B
DTC114EL-T92-K
DTC114EG-T92-K
DTC114EL-T92-R
DTC114EG-T92-R
DTC114EL-T9S-K
DTC114EG-T9S-K
„
Package
SOT-23
SOT-323
SOT-523
TO-92
TO-92
TO-92
TO-92SP
Pin Assignment
1
2
3
G
I
O
G
I
O
G
I
O
G
O
I
G
O
I
G
O
I
G
O
I
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Box
Bulk
Tape Reel
Bulk
MARKING (FOR SOT-23/SOT-323/SOT-523 PACKAGE)
www.unisonic.com.tw
Copyright © 2011 Unisonic Technologies Co., Ltd
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QW-R206-047.H
DTC114E
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
PARAMETER
RATINGS
UNIT
50
V
-10 ~ +40
V
100
mA
SOT-23/SOT-323
200
SOT-523
150
Power Dissipation
PD
mW
TO-92
625
TO-92SP
550
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
Supply Voltage
Input Voltage
Output Current
„
SYMBOL
VCC
VIN
IOUT
ELECTRICAL CHARACTERISTICS (TA=25°C, unless others specified)
PARAMETER
SYMBOL
VIN(OFF)
Input Voltage
VIN(ON)
Output Voltage
VOUT(ON)
Input Current
IIN
Output Current
IOUT(OFF)
DC Current Gain
hFE
Input Resistance
R1
Resistor Ratio
R2/R1
Transition Frequency
fT
Note: Transition frequency of the device
TEST CONDITIONS
VCC =5V, IOUT =100μA
VOUT =0.3V, IOUT =10mA
IOUT/IIN =10mA/0.5mA
VIN=5V
VCC =50V, VIN =0V
VOUT =5V, IOUT =5mA
VCE =10V, IE =−5mA, f=100MHz (Note)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP
MAX
0.5
0.1
0.3
0.88
0.5
10
1
250
13
1.2
3
30
7
0.8
UNIT
V
V
V
mA
μA
KΩ
MHz
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QW-R206-047,H
DTC114E
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
„
Input Voltage vs. Output Current
(ON Characteristics)
100
Output Current vs. Input Voltage
(OFF characteristics)
10m
VOUT=0.3V
VCC=5V
5m
50
TA= 100°C
25°C
-40°C
20
Output Current, IOUT(A)
Input Voltage :VI(ON) V
2m
10
TA= - 40°C
25°C
100°C
5
2
1
0.5
1m
500μ
200μ
100μ
50μ
20μ
10μ
5μ
0.2
2μ
0.1
0.1
1μ
0.2
0.5
1
2
5
10
20
50
100
0
0.5
Output Current, IOUT(mA)
Output Voltage, VOUT(ON) (mV)
DC Current Gain, hFE
100
50
20
10
5
50
20
10
5
2
1
2
5
10
20
50
100
Output Current, IOUT(mA)
TA= 100°C
25°C
-40°C
100
1
0.1
1
lOUT/lIN=20
200
2
0.5
3.0
500
200
0.2
2.5
2.0
1000
VOUT=5V
TA= 100°C
25°C
-40°C
500
1.5
Output Voltage vs. Output Current
DC Current Gain vs. Output Current
1k
1.0
Input Voltage, VI(OFF) (V)
0.1
0.2
0.5
1
2
5
10
20
50
100
Output Current, IOUT(mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-047,H
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