Seme LAB BDS21SMD Silicon epibase pnp darlington transistor Datasheet

SILICON EPIBASE PNP
DARLINGTON TRANSISTOR
BDS21SMD
•
High DC Current Gain
•
Hermetic Ceramic Surface Mount Package
•
Designed For General Purpose Amplifiers and
Low Speed Switching Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
-80V
-80V
-5V
-5A
-0.1A
35W
0.2W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
Parameters
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
Units
5
°C/W
** This datasheet supersedes document 7603
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8218
Issue 1
Page 1 of 2
SILICON EPIBASE PNP
DARLINGTON TRANSISTOR
BDS21SMD
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols
ICBO
Parameters
Test Conditions
Collector-Cut-Off Current
VCB = -80V
IE = 0
VCB = -60V
IE = 0
Min.
Typ
Max.
-0.2
-1.0
TC = 150°C
ICEO
Collector-Cut-Off Current
VCE = -40V
IB = 0
-0.5
IEBO
Emitter-Cut-Off Current
VEB = -5V
IC = 0
-2
IC = -0.5A
VCE = -3V
1000
IC = -3A
VCE = -3V
1000
IC = -3A
IB = -12mA
-2
IC = -5A
IB = -20mA
-4
Base-Emitter Saturation
Voltage
IC = -5A
IB = -20mA
-2.8
Base-Emitter On Voltage
IC = -3A
VCE = -3V
-3.5
IC = -0.5A
VCE = -4V
hFE
Forward-current transfer
ratio
(1)
(1)
VCE(sat)
VBE(sat)
VBE(on)
(1)
(1)
Collector-Emitter Saturation
Voltage
Units
mA
V
DYNAMIC CHARACTERISTICS
Transition Frequency
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
MHz
0.89
(0.035)
min.
MECHANICAL DATA
3.70 (0.146)
3.41 (0.134)
Pad 2 – Collector
4.14 (0.163)
3.84 (0.151)
3.60 (0.142)
Max.
3
2
9.67 (0.381)
9.38 (0.369)
SMD1 (TO-276AB)
Underside View
3.70 (0.146)
3.41 (0.134)
1
10.69 (0.421)
10.39 (0.409)
0.76
(0.030)
min.
Dimensions in mm (inches)
Pad 1 – Base
8
f = 2MHz
11.58 (0.456)
11.28 (0.444)
16.02 (0.631)
15.73 (0.619)
fT
0.50 (0.020)
0.26 (0.010)
Pad 3 - Emitter
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email: [email protected]
Website: http://www.semelab-tt.com
Document Number 8218
Issue 1
Page 2 of 2
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