CEL NE3516S02 N-channel gaas hj-fet, x to ku band low noise and high-gain Datasheet

NE3516S02
Data Sheet
N-Channel GaAs HJ-FET, X to Ku Band Low Noise and High-Gain
R09DS0038EJ0100
Rev.1.00
Apr 16, 2012
Rev.1.00
Apr 16, 2012
FEATURES
 Low noise figure and high associated gain
NF = 0.35 dB TYP., Ga = 14 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA
NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 6 mA (Reference Value)
 4-pin Micro-X plastic (S02) package
APPLICATIONS
 X to Ku band DBS LNB
 Other Ku band communication system
ORDERING INFORMATION
Part Number
Order Number
NE3516S02-T1C NE3516S02-T1C-A
NE3516S02-T1D NE3516S02-T1D-A
Package
Quantity
Marking
S02
package
(Pb-Free)
2 kpcs/reel
P
Supplying Form
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
10 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3516S02-A
ABSOLUTE MAXIMUM RATINGS (TA = +25C, unless otherwise specified)
Parameter
Drain to Source Voltage
Symbol
VDS
Ratings
4.0
Unit
V
Gate to Source Voltage
Drain Current
VGS
ID
–3.0
IDSS
V
mA
Gate Current
Note
Total Power Dissipation
IG
Ptot
100
165
A
mW
Channel Temperature
Storage Temperature
Tch
Tstg
+125
–65 to +125
C
C
Note:
Mounted on 1.08 cm  1.0 mm (t) glass epoxy PWB
2
RECOMMENDED OPERATING RANGE (TA = +25C, unless otherwise specified)
Symbol
MIN.
TYP.
MAX.
Unit
Drain to Source Voltage
Drain Current
Parameter
VDS
ID
+1
5
+2
10
+3
15
V
mA
Input Power
Pin
–
–
0
dBm
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0038EJ0100 Rev.1.00
Apr 16, 2012
Page 1 of 9
NE3516S02
ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Parameter
Gate to Source Leak Current
Saturated Drain Current
Gate to Source Cut-off Voltage
Transconductance
Noise Figure
Associated Gain
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
IGSO
IDSS
VGS = 3.0 V
VDS = 2 V, VGS = 0 V

15
0.5
30
10
60
A
mA
VGS(off)
gm
VDS = 2V, ID = 100 A
VDS = 2 V, ID = 10 mA
0.2
55
0.5
65
1.3

V
mS

13
0.35
14
0.50

dB
dB
NF
Ga
VDS = 2 V, ID = 10 mA, f = 12 GHz
STANDARD CHARACTERISTICS FOR REFERENCE
(TA = +25C, unless otherwise specified)
Parameter
Noise Figure
Associated Gain
R09DS0038EJ0100 Rev.1.00
Apr 16, 2012
Symbol
NF
Ga
Test Conditions
VDS = 2 V, ID = 6 mA, f = 12 GHz
Reference Value
0.35
Unit
dB
13.5
dB
Page 2 of 9
NE3516S02
TYPICAL CHARACTERISTICS (TA = +25C, unless otherwise specified)
Remark The graph indicates nominal characteristics.
R09DS0038EJ0100 Rev.1.00
Apr 16, 2012
Page 3 of 9
NE3516S02
S-PARAMETERS
R09DS0038EJ0100 Rev.1.00
Apr 16, 2012
Page 4 of 9
NE3516S02
RF MEASURING LAYOUT PATTERN (REFERENCE ONLY) (UNIT: mm)
R09DS0038EJ0100 Rev.1.00
Apr 16, 2012
Page 5 of 9
NE3516S02
PACKAGE DIMENSIONS
S02 (UNIT: mm)
R09DS0038EJ0100 Rev.1.00
Apr 16, 2012
Page 7 of 9
NE3516S02
RECOMMENDED SOLDERING CONDITIONS
This product should be soldered and mounted under the following recommended conditions. For soldering methods and
conditions other than those recommended below, contact your nearby sales office.
Soldering Method
Infrared Reflow
Soldering Conditions
Peak temperature (package surface temperature)
Time at peak temperature
Time at temperature of 220C or higher
Preheating time at 120 to 180C
Maximum number of reflow processes
Maximum chlorine content of rosin flux (% mass)
Partial Heating
Peak temperature (terminal temperature)
: 350C or below
Soldering time (per side of device)
: 3 seconds or less
Maximum chlorine content of rosin flux (% mass) : 0.2% (Wt.) or below
: 260C or below
: 10 seconds or less
: 60 seconds or less
: 12030 seconds
: 3 times
: 0.2% (Wt.) or below
Condition Symbol
IR260
HS350
CAUTION
Do not use different soldering methods together (except for partial heating).
R09DS0038EJ0100 Rev.1.00
Apr 16, 2012
Page 8 of 9
NE3516S02
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R09DS0038EJ0100 Rev.1.00
Apr 16, 2012
Page 9 of 9
Revision History
NE3516S02 Data Sheet
Description
Rev.
1.00
Date
Apr 16, 2012
Page
–
Summary
First edition issued
All trademarks and registered trademarks are the property of their respective owners.
C-1
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