IRF IRF7507PBF Ultra low on-resistance Datasheet

PD - 95218
IRF7507PbF
HEXFET® Power MOSFET
Generation V Technology
Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Very Small SOIC Package
l Low Profile (<1.1mm)
l Available in Tape & Reel
l Fast Switching
l Lead-Free
Description
l
l
S1
N-CHANNEL MOSFET
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
VDSS
P-CHANNEL MOSFET
N-Ch
P-Ch
20V
-20V
RDS(on) 0.135Ω 0.27Ω
Top View
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Micro8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
VGS
VGSM
dv/dt
TJ , TSTG
Drain-Source Voltage
Continuous Drain Current, VGS
Continuous Drain Current, VGS
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
N-Channel
20
2.4
1.9
19
Units
P-Channel
-20
-1.7
-1.4
-14
1.25
0.8
10
± 12
16
5.0
-5.0
-55 to + 150
240 (1.6mm from case)
V
A
W
W
mW/°C
V
V
V/ns
°C
Thermal Resistance
Parameter
RθJA
www.irf.com
Maximum Junction-to-Ambient
Max.
100
Units
°C/W
1
5/11/04
IRF7507PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I DSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
20
-20
—
—
—
—
—
—
0.7
-0.7
2.6
1.3
—
—
—
—
––
––
—
––
—
––
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
—
—
VGS = 0V, ID = 250µA
V
—
—
VGS = 0V, ID = -250µA
0.041 —
Reference to 25°C, ID = 1mA
V/°C
-0.012 —
Reference to 25°C, ID = -1mA
0.085 0.14
VGS = 4.5V, ID = 1.7A
0.120 0.20
VGS = 2.7V, I D = 0.85A
Ω
0.17 0.27
VGS = -4.5V, ID =-1.2A
0.28 0.40
VGS = -2.7V, ID =-0.6A
—
—
VDS = VGS, ID = 250µA
V
—
—
VDS = VGS, ID = -250µA
—
—
VDS = 10V, ID = 0.85A
S
—
—
VDS = -10V, ID = -0.6A
— 1.0
VDS = 16 V, VGS = 0V
— -1.0
VDS = -16V, VGS = 0V
µA
—
25
VDS = 16 V, VGS = 0V, TJ = 125°C
— -25
VDS = -16V, VGS = 0V, TJ = 125°C
— ±100
VGS = ± 12V
5.3 8.0
N-Channel
5.4 8.2
ID = 1.7A, VDS = 16V, VGS = 4.5V
0.84 1.3

nC
0.96 1.4
P-Channel
2.2 3.3
ID = -1.2A, V DS = -16V, V GS = -4.5V
2.4 3.6
5.7 —
N-Channel
9.1 —
VDD = 10V, ID = 1.7A, R G = 6.0Ω,
24
—
RD = 5.7Ω
35
—

ns
15
—
P-Channel
38
—
VDD = -10V, ID = -1.2A, RG = 6.0Ω,
16
—
RD = 8.3Ω
43
—
260 —
N-Channel
240 —
VGS = 0V, VDS = 15V, ƒ = 1.0MHz
130 —
pF

130 —
P-Channel
61
—
VGS = 0V, VDS = -15V, ƒ = 1.0MHz
64
—
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
I SM
Pulsed Source Current (Body Diode)
V SD
Diode Forward Voltage
t rr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
— 1.25
—
— -1.25 A
—
—
19
—
— -14
—
— 1.2
TJ = 25°C, IS = 1.7A, VGS = 0V
V
—
— -1.2
TJ = 25°C, IS = -1.2A, V GS = 0V
—
39
59
N-Channel
ns
—
52
78
TJ = 25°C, I F = 1.7A, di/dt = 100A/µs
—
37
56
P-Channel
nC
TJ = 25°C, IF = -1.2A, di/dt = -100A/µs
—
63
95

Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
N-Channel ISD ≤ 1.7A, di/dt ≤ 66A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Surface mounted on FR-4 board, t ≤ 10sec.
max. junction temperature. ( See fig. 21 )
P-Channel ISD ≤ -1.2A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
2
www.irf.com
IRF7507PbF
N - Channel
100
100
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
10
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
BOTTOM 1.5V
TOP
1
0.1
1.5V
20µs PULSE WIDTH
TJ = 25°C
A
0.01
0.1
1
I , Drain-to-Source Current (A)
D
I , Drain-to-Source Current (A)
D
TOP
10
1
1.5V
0.1
20µs PULSE WIDTH
TJ = 150°C
A
0.01
0.1
10
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
ISD , Reverse Drain Current (A)
I D , Drain-to-Source Current (A)
100
10
TJ = 150°C
TJ = 25°C
1
V DS = 10V
20µs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
10
TJ = 150°C
TJ = 25°C
1
0.1
0.4
A
4.0
VGS , Gate-to-Source Voltage (V)
1.0
1.2
1.4
1.6
A
1.8
Fig 4. Typical Source-Drain Diode
Forward Voltage
RDS(on) , Drain-to-Source On Resistance
(Normalized)
R DS(on) , Drain-to-Source On Resistance
1.5
1.0
0.5
VGS = 4.5V
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 5. Normalized On-Resistance
Vs. Temperature
www.irf.com
0.8
0.8
ID = 1.7A
0.0
-60 -40 -20
VGS = 0V
0.6
V SD , Source-to-Drain Voltage (V)
Fig 3. Typical Transfer Characteristics
2.0
10
VDS , Drain-to-Source Voltage (V)
0.6
0.4
V
GS
0.2
= 2.5V
VGS = 5.0V
0.0
0
2
4
6
A
I D , Drain Current (A)
Fig 6. Typical On-Resistance Vs. Drain
Current
3
N - Channel
0.13
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10us
0.11
0.09
ID , Drain Current (A)
R DS(on) , Drain-to-Source On Resistance
(Ω
IRF7507PbF
I D = 2.4A
10
100us
1ms
1
10ms
0.07
0.05
2
3
4
5
6
7
8
A
0.1
TC = 25 ° C
TJ = 150 ° C
Single Pulse
1
V GS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
500
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
Ciss
300
Coss
200
Crss
100
0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
4
100
Fig 8. Maximum Safe Operating Area
10
V GS = 0V,
f = 1MHz
C iss = Cgs + Cgd , Cds SHORTED
C rss = C gd
C oss = Cds + C gd
400
10
VDS , Drain-to-Source Voltage (V)
A
I D = 1.7A
VDS = 16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 9
0
0
2
4
6
8
10
A
Q G , Total Gate Charge (nC)
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
www.irf.com
IRF7507PbF
P - Channel
100
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
10
-ID , Drain-to-Source Current (A)
-ID , Drain-to-Source Current (A)
TOP
1
0.1
-1.5V
20µs PULSE WIDTH
TJ = 25°C
A
0.01
0.1
1
10
1
-1.5V
0.1
20µs PULSE WIDTH
TJ = 150°C
0.01
0.1
10
Fig 11. Typical Output Characteristics
-ISD , Reverse Drain Current (A)
-ID , Drain-to-Source Current (A)
A
10
TJ = 25°C
TJ = 150°C
1
0.1
VDS = -10V
20µs PULSE WIDTH
0.01
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
TJ = 150°C
1
TJ = 25°C
0.1
VGS = 0V
0.01
A
0.4
-VGS , Gate-to-Source Voltage (V)
0.5
V GS = -4.5V
0.0
0
20
40
60
80
A
100 120 140 160
TJ , Junction Temperature (°C)
Fig 15. Normalized On-Resistance
Vs. Temperature
www.irf.com
R DS (on), Drain-to-Source On Resistance
1.0
-20
1.0
A
1.2
1.0
1.5
-40
0.8
Fig 14. Typical Source-Drain Diode
Forward Voltage
I D = -1.2A
-60
0.6
-VSD , Source-to-Drain Voltage (V)
Fig 13. Typical Transfer Characteristics
R DS(on) , Drain-to-Source On Resistance
(Normalized)
10
Fig 12. Typical Output Characteristics
10
2.0
1
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
0.8
0.6
VGS = -2.5V
0.4
VGS = -5.0V
0.2
0.0
0.0
0.5
1.0
1.5
2.0
-I D , Drain Current (A)
Fig 16. Typical On-Resistance Vs. Drain
Current
5
IRF7507PbF
P - Channel
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
0.250
-II D , Drain Current (A)
R DS (on), Drain-to-Source On Resistance
0.300
ID = -1.7A
0.200
0.150
0.100
2
3
4
5
6
7
10
100us
1ms
1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
0.1
8
1
10
-VGS , Gate-to-Source Voltage (V)
Fig 17. Typical On-Resistance Vs. Gate
Voltage
500
10
-V GS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
Fig 18. Maximum Safe Operating Area
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
400
Ciss
300
Coss
200
Crss
100
0
1
10
100
-V DS , Drain-to-Source Voltage (V)
100
I D = -1.2A
VDS = -16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 19
0
A
0
2
4
6
8
A
10
Q G , Total Gate Charge (nC)
-VDS , Drain-to-Source Voltage (V)
Fig 20. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 19. Typical Capacitance Vs.
Drain-to-Source Voltage
N-P - Channel
Thermal Response (Z thJA )
1000
100
D = 0.50
0.20
10
0.10
0.05
P DM
0.02
0.01
1
0.1
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
6
www.irf.com
IRF7507PbF
Micro8 Package Outline
Dimensions are shown in milimeters (inches)
LEAD ASSIGNMENTS
DIM
D
3
- B-
D D D D
8 7 6 5
3
H
E
0.25 (.010)
- A-
M
A
M
D1 D1 D2 D2
8 7 6 5
8 7 6 5
SINGLE
DUAL
1 2 3 4
1 2 3 4
S S S G
S1 G1 S2 G2
1 2 3 4
INCHES
MILLIMETERS
MIN
MAX
MIN
A
.036
.044
0.91
MAX
1.11
A1
.004
.008
0.10
0.20
B
.010
.014
0.25
0.36
C
.005
.007
0.13
0.18
D
.116
.120
2.95
3.05
e
.0256 BASIC
0.65 BASIC
e1
.0128 BASIC
E
.116
.120
2.95
3.05
H
.188
.198
4.78
0.33 BASIC
5.03
e
L
.016
.026
0.41
0.66
6X
θ
0°
6°
0°
6°
e1
RECOMMENDED FOOTPRINT
θ
1.04
( .041 )
8X
A
-CB
0.10 (.004)
A1
8X
0.08 (.003)
M
C A S
L
8X
B S
C
0.38
8X
( .015 )
8X
3.20
( .126 )
4.24
5.28
( .167 ) ( .208 )
NOTES:
1 DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
0.65 6X
( .0256 )
2 CONTROLLING DIMENSION : INCH.
3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
Micro8 Part Marking Information
EXAMPLE: THIS IS AN IRF 7501
LOT CODE (XX)
DATE CODE (YW) - S ee table below
Y = YEAR
W = WEEK
P = DES IGNATES LEAD - FREE
PRODUCT (OPTIONAL)
PART NUMBER
WW = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR
www.irf.com
YEAR
Y
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
1
2
3
4
5
6
7
8
9
0
WORK
WEEK
WW = (27-52) IF PRECEDED BY A LETT ER
W
YEAR
Y
01
02
03
04
A
B
C
D
24
25
26
X
Y
Z
2001
2002
2003
2004
2005
2006
2007
2008
2009
2010
A
B
C
D
E
F
G
H
J
K
WORK
WEEK
W
27
28
29
30
A
B
C
D
50
51
52
X
Y
Z
7
IRF7507PbF
Micro8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. OUTLINE CONFORMS TO EIA-481 & EIA-541.
2. CONTROLLING DIMENSION : MILLIMETER.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/04
8
www.irf.com

Open as PDF

Similar pages