HD2312 SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET Product Summary V(BR)DSS ID RDS(on)MAX SOT- 23 31.8mΩ@4.5V 35.6mΩ@2.5V 20 V D 5A 41.4mΩ@1.8V Features ● TrenchFET Power MOSFET ● Excellent RDS(on) and Low Gate Charge S G Applications ● DC/DC Converters ● Load Switching for Portable Applications Marking: ● S12 Symbol Value Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±8.0 ID 5 Pulsed Drain Current IDM 20 Continuous Source-Drain Diode Current IS 1.04 PD 0.35 W RθJA 357 ℃/W Junction Temperature TJ 150 Storage Temperature Tstg -50 ~+150 Parameter Continuous Drain Current t=5s Maximum Power Dissipation t=5s Thermal Resistance from Junction to Ambient High Diode Semiconductor Unit V A ℃ 1 Electrical Characteristics (TA=25℃ unless otherwise noted) Symbol Parameter Test Condition Min Typ Max Unit Static Drain-source breakdown voltage V(BR) DSS VGS = 0V, ID =250µA Gate-source leakage IGSS VDS =0V, VGS =±8V ±100 nA Zero gate voltage drain current IDSS VDS =20V, VGS =0V 1.0 µA Gate-source threshold voltage VGS(th) 0.7 1.0 V VGS =4.5V, ID =5.0A 0.018 0.0318 VGS =2.5V, ID =4.7A 0.023 0.0356 VGS =1.8V, ID =4.3A 0.030 0.0414 a Drain-source on-state resistance RDS (on) a Forward tranconductance gfS VDS =VGS, ID =250µA 20 0.45 V 6 VDS =10V, ID =5.0A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Gate resistance Rg Turn-on delay Time 865 VDS =10V,VGS =0V,f =1MHz 55 f =1MHz 4.8 0.5 tr Turn-off Delay time td(off) Fall yime Ω 10 td(on) Rise time pF 105 VGEN=5V,VDD=10V, 20 ID =4A,RG=1Ω, RL=2.2Ω 32 tf ns 12 Drain-source body diode characteristics Forward diode voltage VSD VGS =0V,IS=4A 0.75 1.2 V Notes : a. Pulse Test : pulse width ≤300µs, duty cycle ≤2%. b. These parameters have no way to verify. High Diode Semiconductor 2 Typical Characteristics Output Characteristics Transfer Characteristics 20 14 Ta=25℃ 18 VGS=3V,4V,5V,6V VDS=3V Pulsed Pulsed 12 16 (A) (A) DRAIN CURRENT 12 10 8 6 10 Ta=100℃ ID VGS=2V ID DRAIN CURRENT Ta=25℃ 14 VGS=1.5V 8 6 4 4 2 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DRAIN TO SOURCE VOLTAGE VDS 4.0 4.5 0 0.0 5.0 (V) 0.5 1.0 1.5 2.0 GATE TO SOURCE VOLTAGE VGS 2.5 3.0 (V) RDS(ON) —— VGS RDS(ON) —— ID 150 40 Ta=25℃ Pulsed Pulsed ID=5A (m) VGS=1.8V RDS(ON) 30 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 35 25 VGS=2.5V 20 100 Ta=100℃ 50 VGS=4.5V 15 Ta=25℃ 10 0.5 0 1.0 1.5 2.0 2.5 3.0 DRAIN CURRENT 3.5 ID 4.0 4.5 5.0 0 (A) 1 2 3 GATE TO SOURCE VOLTAGE 4 VGS 5 (V) Threshold Voltage IS —— VSD 6 1.2 Pulsed VTH 1 Ta=100℃ THRESHOLD VOLTAGE SOURCE CURRENT IS (A) (V) 1.0 Ta=25℃ 0.1 0.8 ID=250uA 0.6 0.4 0.2 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE TO DRAIN VOLTAGE 1.4 VSD (V) 1.6 1.8 0.0 25 50 75 JUNCTION TEMPERATURE High Diode Semiconductor 100 Tj 125 (℃ ) 3 SOT-23 Package Outline Dimensions SOT-23 Suggested Pad Layout JSHD JSHD High Diode Semiconductor 4 Reel Taping Specifications For Surface Mount Devices-SOT-23 30 High Diode Semiconductor 5