AUIRFR48Z
Features
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●
●
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Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D-Pak
AUIRFR48Z
Description
Specifically designed for Automotive applications,
thi
Power MOSFET utilizes the latest
processing techniques to achieve extremely low onresistance per silicon area. Additional features of this
design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating . These features combine to make this
design an extremely efficient and reliable device for
use in Automotive applications and a wide variety of
other applications.
D
G
S
V(BR)DSS
55V
RDS(on) max.
11mΩ
ID (Silicon Limited)
62A
ID (Package Limited)
42A
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
EAS (tested )
IAR
EAR
TJ
TSTG
Max.
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
c
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
d
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
h
c
g
Operating Junction and
Storage Temperature Range
2014-8-22
j
W
W/°C
V
mJ
A
mJ
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case )
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)
A
0.61
± 20
74
110
See Fig.12a, 12b, 15, 16
300
Thermal Resistance
RθJC
RθJA
RθJA
Units
62
44
42
250
91
i
Junction-to-Ambient
1
Typ.
Max.
Units
–––
–––
–––
1.64
40
110
°C/W
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AUIRFR48Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆V(BR)DSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
55
–––
–––
2.0
120
–––
–––
–––
–––
–––
0.054
8.86
–––
–––
–––
–––
–––
–––
–––
–––
11
4.0
–––
20
250
200
-200
Conditions
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
mΩ VGS = 10V, ID = 37A
V VDS = VGS, ID = 50µA
S VDS = 25V, ID = 37A
µA VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
e
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
–––
–––
–––
–––
–––
–––
–––
–––
40
11
15
15
61
40
35
4.5
60
–––
–––
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
–––
–––
–––
–––
–––
–––
S
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 44V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 44V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
nC
ns
nH
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
1720
290
160
1000
230
360
pF
ID = 37A
VDS = 44V
VGS = 10V
VDD = 28V
ID = 37A
RG = 12 Ω
VGS = 10V
Between lead,
e
e
D
G
f
Diode Characteristics
Parameter
Min. Typ. Max. Units
IS
Continuous Source Current
–––
–––
37
ISM
(Body Diode)
Pulsed Source Current
–––
–––
250
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
20
14
1.3
40
28
c
Conditions
MOSFET symbol
A
V
ns
nC
showing the
integral reverse
p-n junction diode.
TJ = 25°C, IS = 37A, VGS = 0V
TJ = 25°C, IF = 37A, VDD = 28V
di/dt = 100A/µs
e
e
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.11mH
RG = 25Ω, IAS = 37A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the same
charging time as Coss while VDS is rising from 0 to
80% VDSS
2014-8-22
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
This value determined from sample failure population,
starting TJ = 25°C, L = 0.11mH, RG = 25Ω,
IAS = 37A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques
refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
2
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AUIRFR48Z
Qualification Information†
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Machine Model
††
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
D-PAK
MSL1
Class M4 (425V)
AEC-Q101-002
ESD
Human Body Model
Class H1B (1000V)
AEC-Q101-001
Charged Device
Model
Class C5 (1125V)
AEC-Q101-005
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site:
Exceptions to AEC-Q101 requirements are noted in the qualification report.
2014-8-22
3
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AUIRFR48Z
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
BOTTOM
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
100
10
4.5V
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
≤60µs PULSE WIDTH
≤60µs PULSE WIDTH
Tj = 25°C
1
Tj = 175°C
1
0.1
1
10
100
0.1
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
100
Fig 2. Typical Output Characteristics
1000
60
100
T J = 175°C
10
T J = 25°C
1
VDS = 25V
≤60µs PULSE WIDTH
0.1
2
4
6
8
10
Gfs , Forward Transconductance (S)
ID, Drain-to-Source Current (Α)
1
VDS, Drain-to-Source Voltage (V)
TJ = 25°C
40
TJ = 175°C
30
20
10
VDS = 10V
380µs PULSE WIDTH
0
12
0
20
40
60
80
ID,Drain-to-Source Current (A)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
2014-8-22
50
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
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AUIRFR48Z
10000
20
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C, Capacitance(pF)
C oss = C ds + C gd
Ciss
1000
Coss
Crss
ID= 37A
VDS= 44V
VDS= 28V
VDS= 11V
16
12
8
4
0
100
1
10
0
100
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000.00
100.00
TJ = 175°C
10.00
TJ = 25°C
VGS = 0V
40
50
60
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
100µsec
10
1msec
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
DC
0.1
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
10
100
VDS , Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
2014-8-22
30
Fig 6. Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
0.10
20
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
1.00
10
5
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AUIRFR48Z
70
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
LIMITED BY PACKAGE
ID , Drain Current (A)
60
50
40
30
20
10
0
25
50
75
100
125
150
ID = 37A
VGS = 10V
2.0
1.5
1.0
0.5
175
-60 -40 -20 0
TC , Case Temperature (°C)
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.1
0.05
τJ
0.02
0.01
0.01
R1
R1
τJ
τ1
τ1
R2
R2
τ2
τ2
Ci= τi/Ri
Ci i/Ri
SINGLE PULSE
( THERMAL RESPONSE )
R3
R3
τ3
τC
τ
τ3
Ri (°C/W)
0.7206
τi (sec)
0.000326
0.6009
0.001810
0.3175
0.014886
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-22
6
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AUIRFR48Z
DRIVER
L
VDS
D.U.T
RG
VGS
20V
+
V
- DD
IAS
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS, Single Pulse Avalanche Energy (mJ)
15V
300
I D
4.3A
6.3A
BOTTOM 37A
TOP
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
I AS
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
QG
10 V
QGD
5.0
VGS(th) Gate threshold Voltage (V)
QGS
VG
Charge
Fig 13a. Basic Gate Charge Waveform
L
DUT
0
4.0
3.5
3.0
2.5
2.0
ID = 1.0A
ID = 50µA
ID = 150µA
ID = 250µA
ID = 1.0mA
1.5
1.0
VCC
-75 -50 -25
0
25
50
75
100 125 150 175
TJ , Temperature ( °C )
1K
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
2014-8-22
4.5
7
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AUIRFR48Z
1000
Avalanche Current (A)
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming ∆ Tj = 25°C due to
avalanche losses
0.01
10
0.05
0.10
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
80
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 37A
60
40
20
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T jmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav ) = Transient thermal resistance, see figure 11)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
2014-8-22
8
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AUIRFR48Z
D.U.T
Driver Gate Drive
+
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• I SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
V DD
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
-
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
*
VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
V DS
V GS
D.U.T.
RG
+
-V DD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
2014-8-22
9
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AUIRFR48Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
Part Number
AUIRFR48Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, LeadFree
XX
Lot Code
2014-8-22
10
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AUIRFR48Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
2014-8-22
11
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AUIRFR48Z
Ordering Information
Base part
number
Package Type
AUIRFR48Z
Dpak
2014-8-22
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
12
Complete Part Number
Quantity
75
2000
3000
3000
AUIRFR48Z
AUIRFR48ZTR
AUIRFR48ZTRL
AUIRFR48ZTRR
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