HANBit HMF3M32M6V FLASH-ROM MODULE 12MByte (3M x 32-Bit) ,72pin-SIMM, 3.3V Part No. HMF3M32M6V GENERAL DESCRIPTION The HMF3M32M6VA is a high-speed flash read only memory (FROM) module containing 6,291,456 words organized in a x32bit configuration. The module consists of six 1M x 16 FROM mounted on a 72-pin, single-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +3.0V DC power supply. PIN ASSIGNMENT FEATURES w Access time : 70,80, 90 and 120ns PIN SYMBOL PIN SYMBOL PIN SYMBOL 1 Vss 25 DQ17 49 /WE w High-density 12MByte design 2 /RESET 26 DQ18 50 A18 w High-reliability, low-power design 3 DQ0 27 DQ19 51 A17 w Single + 3V ± 0.3V power supply 4 DQ1 28 DQ20 52 A16 w Easy memory expansion 5 DQ2 29 DQ21 53 A15 6 DQ3 30 Vcc 54 A14 7 DQ4 31 DQ22 55 A13 8 DQ5 32 DQ23 56 A12 w Low profile 72-pin SIMM 9 DQ6 33 /CE_1H 57 A11 w Minimum 1,000,000 write/erase cycle 10 Vcc 34 /CE_2H 58 A10 11 DQ7 35 DQ24 59 Vcc 12 /CE_1L 36 DQ25 60 A9 w Embedded algorithms 13 /CE_2L 37 DQ26 61 A8 w Erase suspend / Erase resume 14 DQ8 38 DQ27 62 A7 15 DQ9 39 Vss 63 A6 16 DQ10 40 DQ28 64 A5 17 DQ11 41 DQ29 65 A4 18 DQ12 42 DQ30 66 A3 w Hardware reset pin(RESET#) w FR4-PCB design w Flexible sector architecture OPTIONS MARKING w Timing 19 DQ13 43 DQ31 67 A2 70ns access -70 20 DQ14 44 NC 68 A1 80ns access -80 21 DQ15 45 NC 69 A0 22 23 24 NC /CE_3H DQ16 46 47 48 /CE_3L A19 /OE 70 71 72 NC NC Vss 90ns access -90 120ns access -120 72-PIN SIMM TOP VIEW w Packages 72-pin SIMM URL: www.hbe.co.kr REV.02(August,2002) M 1 HANbit Electronics Co., Ltd. HANBit HMF3M32M6V FUNCTIONAL BLOCK DIAGRAM DQ0 - DQ31 A0 – A19 32 20 A0-19 A0-19 DQ 0-15 /WE /WE /CE_1L /OE /CE U1 A0-19 DQ 0-15 /WE /OE U2 /OE /CE /Reset URL: www.hbe.co.kr REV.02(August,2002) /WE /OE /CE_1H DQ16-31 U4 /CE_2H A0-19 DQ16-31 DQ0-15 /WE /RY_BY A0-19 DQ 16-31 /CE A0-19 /OE /CE RY-BY /Reset RY-BY /Reset /CE_3L U3 /OE /CE /WE DQ16-31 /Reset /Reset /CE_2L /WE RY-BY RY-BY /WE DQ16-31 U5 /WE /OE RY-BY RY-BY DQ 16-31 U6 /CE /CE_3H /Reset /Reset 2 HANbit Electronics Co., Ltd. HANBit HMF3M32M6V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -0.5V to +4.0V Voltage on Vcc Supply Relative to Vss VCC -0.5V to +4.0V Power Dissipation PD 6W TSTG -65oC to +150 oC Voltage on Any Pin Relative to Vss Storage Temperature Operating Temperature TA -55oC to +125 oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause perman ent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS SYMBOL MIN TYP. MAX Supply Voltage VCC 2.7V 3.0V 3.6V Ground VSS 0 0 0 Input High Voltage VIH 2.0 - Vcc+0.3V Input Low Voltage VIL -0.5 - 0.8V PARAMETER DC CHARACTERISTICS (CMOS Compatible) PARAMET DESCRIPTION TEST CONDITIONS MIN TYP. MAX UNIT ±1.0 uA 35 uA ±1.0 uA ER ILI Input Load Current VIN=Vss to Vcc, Vcc=Vcc max ILIT A9 Input Load Current Vcc= Vcc max ; A9=12.5V ILO Output Leakage Current VOUT= Vss to Vcc, Vcc= Vcc max /CE=VIK, /OE=VIH 5MHZ 9 16 Vcc Active Read Current Byte Mode 1MHZ 2 4 (Note1) /CE=VIL, /OE=VIH 5MHZ 9 16 Word Mode 1MHZ 2 4 /CE=VIL, /OE=VIH 20 30 mA Vcc=Vcc max ; /CE,/Reset=Vcc±0.3V 0.2 5 uA Vcc=Vcc max ; /Reset=Vss±0.3V 0.2 5 uA 0.2 5 uA ICC1 mA Vcc Active Write Current ICC2 (Note 2 and 4) ICC3 Vcc Standby Current Vcc Standby Current ICC4 During Reset Automatic Sleep VIH=Vcc±0.3V; Mode(Note3) VIL=Vss±0.3V ICC5 VIL Input Low Voltage -0.5 0.8 V VIH Input High Voltage 0.7xVcc Vcc+0.3 V URL: www.hbe.co.kr REV.02(August,2002) 3 HANbit Electronics Co., Ltd. HANBit HMF3M32M6V Voltage for Autoselect and VID Vcc=3.3V 11.5 12.5 V 0.45 V Temporary Unprotect VOL Output Low Voltage IOL=4.0mA, Vcc=Vcc min 0.85xVc VOH1 IOH=-2.0mA, Vcc=Vcc min V c Output High Voltage VOH2 VLKO IOH=-100uA, Vcc= Vcc min Vcc-0.4 Low Vcc Lock-Out Voltage V 2.3 2.5 V Note : 1. The Icc current listed is typically less 2mA/MHz, with /OE at V IH. Typical Vcc is 3.0V. 2. Icc active while Embedded Erase or Embedded Program is progress. 3. Automatic sleep mode enables the low power mode when addresses remain stable for t ACC+30ns. Typical sleep mode current is 200nA. 4. Not 100% tested. LATCHUP CHARACTERISTICS DESCRIPTION MIN MAX -1.0V 12.5V -1.0V Vcc+1.0V -100mA +100mA Input Voltage with respect to Vss on all pins except I/O Pins (Including A9,/OE, and /Reset) Input Voltage with respect to Vss on all I/O Pins Vcc Current Includes all pins except Vcc. Test conditions: Vcc=3.0V, one pin at a time. DATA RETENTION PARAMETER TEST CONDITIONS Minimum Pattern Data MIN UNIT O 10 Years O 20 Years 150 C Retention Time 125 C ERASE AND PROGRAMMING PERFORMANCE TYP PARAMETER MAX (NOTE2) UNIT COMMENTS 15 s Excludes 00h programming prior to s erasure (Note4) (NOTE1) Sector Erase Time 0.7 Chip Erase Time 25 Byte Programming Time 9 300 us Word Programming Time 11 360 us Chip Programming Time Byte Mode 18 54 s 12 36 s Excludes system level overhead (Note3) Word Mode (Note5) Notes : URL: www.hbe.co.kr REV.02(August,2002) 4 HANbit Electronics Co., Ltd. HANBit HMF3M32M6V O 1. Typical program and erase times assume the following conditions: 25 C, 3.0V Vcc, 1,000,000 cycles. Additionally programming typical assume checkerboard pattern. O 2. Under worst case conditions of 90 C, Vcc=2.7V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes program faster than the maximum program times listed 4. In the pre-programming step of the Embedded Erase algorithm, all byt es are programmed to 00h before erasure. 5. System-level overhead is the time required to excute the two-or four-bus-cycle sequence for the program command. See table 9 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles. SOP/TSOP PIN CAPACITANCE PARAMETER PARAMETER SYMBOL DESCRIPTION CIN Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance TEST SETUP TYP. MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF Notes : 1. Sampled, not 100% tested o 2.Test conditions T A = 25 C, f=1.0 MHz. TEST SPECIFICATIONS TEST CONDITION 80R -90/ -120 Output load UNIT 1TTL gate Output load capacitance, 30 100 pF CL (Including jig capacitance) Input rise and fall times 5 ns 0.0 - 3.0 V Input timing measurement reference levels 1.5 V Output timing measurement reference levels 1.5 V Input pulse levels URL: www.hbe.co.kr REV.02(August,2002) 5 HANbit Electronics Co., Ltd. HANBit HMF3M32M6V 3.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance AC CHARACTERISTICS u Erase / Program Operations PARAMETER SYMBOLS DESCRIPTION -80 -90 UNIT 80 90 ns JEDEC Standard tAVAV tWC Write Cycle Time (Note1) Min tAVWL tAS Address Setup Time Min tWLAX tAH Address Hold Time Min 45 45 ns tDVWH tDS Data Setup Time Min 35 45 ns tWHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Min 0 ns 0 ns Read Recovery Time Before Write tGHWL tGHWL (/OE High to /WE Low) tELWL tCS /CE Setup Time Min 0 ns tWHEH tCH /CE Hold Time Min 0 ns tWLWH tWP Write Pulse Width Min tWHWL tWPH Write Pulse Width High Min 30 ns Byte Typ 9 us tWHWH1 tWHWH1 Word Typ 11 us Sector Erase Operation (Note2) Typ 0.7 sec tVCS Vcc Setup Time (Note1) Min 50 us tRB Recovery Time from RY//BY Min 0 ns Program/ Erase Valid to RY//BY Delay Min 90 ns tWHWH2 tWHWH2 tBUSY 35 35 Programming Operation (Note2) Note: 1. Not 100% tested. URL: www.hbe.co.kr REV.02(August,2002) ns 6 HANbit Electronics Co., Ltd. HANBit HMF3M32M6V 2. See the "Erase and Programming Performance" section for more Information u Alternate /CE Controlled Erase/ Program Operations PARAMETER SYMBOLS DESCRIPTION -80 -90 UNIT 80 90 ns JEDEC Standard tAVAV tWC Write Cycle Time (Note1) Min tAVEL tAS Address Setup Time Min tELAX tAH Address Hold Time Min 45 45 ns tDVEH tDS Data Setup Time Min 35 45 ns tEHDX tDH Data Hold Time Min 0 ns tOES Output Enable Setup Time Min 0 ns Min 0 ns 0 ns Read Recovery Time Before Write tGHEL tGHEL (/OE High to /WE Low) tWLEL tWS /WE Setup Time Min 0 ns tEHWH tWH /WE Hold Time Min 0 ns tELEH tCP /CE Pulse Width Min tEHEL tCPH /CE Pulse Width High Min 30 ns tWHWH1 tWHWH1 tWHWH2 tWHWH2 35 35 Programming Byte Min 9 us Operation (Note2) Word Min 11 us Min 0.7 Sector Erase Operation (Note2) Note: 1. Not 100% tested. 2. See the "Erase and Programming Performan ce" section for more Information. URL: www.hbe.co.kr REV.02(August,2002) ns 7 HANbit Electronics Co., Ltd. HANBit HMF3M32M6V u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 8 HANbit Electronics Co., Ltd. HANBit HMF3M32M6V u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 9 HANbit Electronics Co., Ltd. HANBit HMF3M32M6V u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 10 HANbit Electronics Co., Ltd. HANBit HMF3M32M6V u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 11 HANbit Electronics Co., Ltd. HANBit HMF3M32M6V PACKAGE DIMENSIONS 107.95± 0.2mm 3.38± 0.2 mm 17.5± 0.2mm 6.35± 0.2mm 1 72 2.03± 0.2 mm 6.35 ± 0.2mm 1.0± 0.2 mm 1.27± 0.2 mm 2.79 ± 0.2mm 95.25± 0.2 mm 2.54 mm 0.25 mm MAX MIN Gold: 1.04±0.10 mm 1.29±0.08 mm Solder: 0.914±0.10 mm 1.27 (Solder & Gold Plating) ORDERING INFORMATION Part Number Density Org. Package HMF3M32M6V-70 12MByte 3MX 32bit 72 Pin-SIMM HMF3M32M6V-80 12MByte 3MX 32bit HMF3M32M6V-90 12MByte HMF3M32M6V-120 12MByte URL: www.hbe.co.kr REV.02(August,2002) Component Vcc Speed 6EA 3.3V 70ns 72 Pin-SIMM 6EA 3.3V 80ns 3MX 32bit 72 Pin-SIMM 6EA 3.3V 90ns 3MX 32bit 72 Pin-SIMM 6EA 3.3V 120ns 12 Number HANbit Electronics Co., Ltd.