AP10P500N
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Small Package Outline
▼ Surface Mount Device
BVDSS
-100V
RDS(ON)
0.5Ω
ID
- 1.2A
S
▼ RoHS Compliant & Halogen-Free
SOT-23
G
Description
D
AP10P500 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-resistance
and fast switching performance. It provides the designer with an extreme
efficient device for use in a wide range of power applications.
G
S
The special design SOT-23 package with good thermal performance is
widely preferred for all commercial-industrial surface mount applications
using infrared reflow technique and suited for voltage conversion or
switch applications.
Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
+20
V
-1.2
A
-0.95
A
ID@TA=25℃
ID@TA=70℃
3
Drain Current , VGS @ 10V
3
Drain Current , VGS @ 10V
1
IDM
Pulsed Drain Current
-4.8
A
PD@TA=25℃
Total Power Dissipation
1.38
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-amb
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
90
℃/W
1
201601281
AP10P500N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-100
-
-
V
VGS=-10V, ID=-1A
-
-
0.5
Ω
VGS=-4.5V, ID=-0.5A
-
-
0.6
Ω
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-1A
-
3.3
-
S
IDSS
Drain-Source Leakage Current
VDS=-80V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-1A
-
10.5
17
nC
Qgs
Gate-Source Charge
VDS=-50V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-10V
-
2.5
-
nC
td(on)
Turn-on Delay Time
VDS=-50V
-
7
-
ns
tr
Rise Time
ID=-1A
-
5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
17
-
ns
tf
Fall Time
VGS=-10V
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
420
670
pF
Coss
Output Capacitance
VDS=-50V
-
35
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
25
-
pF
Min.
Typ.
.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=-1A, VGS=0V
-
-
-1.3
V
trr
Reverse Recovery Time
IS=-1A, VGS=0V,
-
37
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
27
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 270℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP10P500N
5
10
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
-ID , Drain Current (A)
8
T A = 150 o C
6
4
2
65mΩ
3
2
1
0
0
0
2
4
6
8
10
0
1
2
3
4
5
6
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.4
400
I D = -0.5A
T A =25 o C
I D = -1A
V GS = -10V
360
.
Normalized RDS(ON)
2
380
RDS(ON) (mΩ )
-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V
4
-ID , Drain Current (A)
T A =25 o C
1.6
1.2
0.8
340
0.4
0
320
2
4
6
8
-100
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
4
I D = -250uA
1.6
T j =150 o C
Normalized VGS(th)
-IS(A)
3
T j =25 o C
2
1.2
0.8
1
0.4
2.01E+08
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-100
-50
0
50
T j , Junction Temperature (
100
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP10P500N
f=1.0MHz
12
800
I D = -1A
V DS = -50V
600
65mΩ
8
C (pF)
-VGS , Gate to Source Voltage (V)
10
6
C iss
400
4
200
2
C oss
C rss
0
0
0
4
8
12
16
1
21
41
Q G , Total Gate Charge (nC)
61
81
101
121
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
10
Operation in this area
limited by RDS(ON)
100us
1
-ID (A)
1ms
10ms
0.1
.
100ms
1s
DC
0.01
T A =25 o C
Single Pulse
0.001
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.01
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Single Pulse
Rthja = 270℃/W
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
-V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
1.6
-ID , Drain Current (A)
VG
QG
1.2
-10V
QGS
0.8
QGD
0.4
Charge
Q
0
25
50
75
100
125
150
o
T A , Ambient Temperature ( C )
Fig 11. Drain Current v.s. Ambient
Temperature
Fig 12. Gate Charge Waveform
4
AP10P500N
2
2
I D = -1mA
PD, Power Dissipation(W)
Normalized BVDSS
1.6
1.2
0.8
1.5
1
0.5
0.4
0
0
-100
-50
T
0
j
50
100
0
150
50
, Junction Temperature ( o C)
100
150
o
T A , Ambient Temperature( C)
Fig 13. Normalized BVDSS v.s. Junction
Fig 14. Total Power Dissipation
Temperature
1600
6
T j =25 o C
V DS = -10V
RDS(ON) (mΩ)
1200
800
.
-4.5V
V GS = -10V
400
-ID , Drain Current (A)
5
4
3
2
T j =150 o C
T j =25 o C
1
o
T j = -55 C
0
0
0
2
4
6
8
-I D , Drain Current (A)
Fig 15. Typ. Drain-Source on State
Resistance
10
0
1
2
3
4
5
6
-V GS , Gate-to-Source Voltage (V)
Fig 16. Transfer Characteristics
5
AP10P500N
MARKING INFORMATION
Part Number : A12
A12SS
Date Code : SS
SS:2004,2008,2012,2016,2020...
SS:2003,2007,2011,2015,2019...
SS:2002,2006,2010,2014,2018...
SS:2001,2005,2009,2013,2017...
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