ON BAV99LT1G Dual series switching diode Datasheet

BAV99L, SBAV99L
Dual Series
Switching Diode
Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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MAXIMUM RATINGS (Each Diode)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
215
mAdc
IFM(surge)
500
mAdc
Repetitive Peak Reverse Voltage
VRRM
100
V
Average Rectified Forward Current (Note 1)
(averaged over any 20 ms period)
IF(AV)
715
mA
Repetitive Peak Forward Current
IFRM
450
mA
Non−Repetitive Peak Forward Current
t = 1.0 ms
t = 1.0 ms
t = 1.0 s
IFSM
Peak Forward Surge Current
CASE 318
SOT−23
STYLE 11
3
CATHODE/ANODE
MARKING DIAGRAM
A
2.0
1.0
0.5
A7 MG
G
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
1
A7 = Device Code
M = Date Code*
G
= Pb−Free Package
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR− 5 Board (Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction−to−Ambient
Junction and Storage
Temperature Range
CATHODE
2
ANODE
1
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RqJA
556
°C/W
PD
300
mW
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
BAV99LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SBAV99LT1G
SOT−23
(Pb−Free)
3,000 / Tape & Reel
Device
2.4
mW/°C
RqJA
417
°C/W
TJ, Tstg
−65 to
+150
°C
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
BAV99LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
SBAV99LT3G
SOT−23
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 12
1
Publication Order Number:
BAV99LT1/D
BAV99L, SBAV99L
OFF CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Reverse Breakdown Voltage,
(I(BR) = 100 mA)
Min
Max
Unit
100
−
−
−
−
1.0
30
50
−
1.5
−
−
−
−
715
855
1000
1250
−
6.0
−
1.75
V(BR)
mAdc
Reverse Voltage Leakage Current,
(VR = 100 Vdc)
(VR = 25 Vdc, TJ = 150°C)
(VR = 70 Vdc, TJ = 150°C)
IR
Diode Capacitance,
(VR = 0, f = 1.0 MHz)
CD
Forward Voltage,
(IF = 1.0 mAdc)
(IF = 10 mAdc)
(IF = 50 mAdc)
(IF = 150 mAdc)
VF
Reverse Recovery Time,
(IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) RL = 100 W
trr
Forward Recovery Voltage,
(IF = 10 mA, tr = 20 ns)
Vdc
pF
mVdc
ns
VFR
V
CURVES APPLICABLE TO EACH DIODE
100
IR, REVERSE CURRENT (mA)
100
TA = 150°C
TA = 125°C
TA = 85°C
10
TA = 55°C
TA = 25°C
1
TA = −40°C
TA = −55°C
0.1
0
TA = 150°C
10
TA = 125°C
1.0
TA = 85°C
TA = 55°C
0.1
0.01
TA = 25°C
0.001
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
10
20
30
40
50
VF, FORWARD VOLTAGE (V)
VR, REVERSE VOLTAGE (V)
Figure 1. Forward Voltage
Figure 2. Leakage Current
0.61
Cd, DIODE CAPACITANCE (pF)
IF, FORWARD CURRENT (mA)
1000
0.59
0.57
0.55
0.53
0.51
0.49
0.47
0.45
0
1
2
3
4
5
6
VR, REVERSE VOLTAGE (V)
Figure 3. Capacitance
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2
7
8
60
70
BAV99L, SBAV99L
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
INCHES
DIM
MIN
NOM
MAX
MIN
NOM
MAX
0.039
0.044
A
0.89
1.00
1.11
0.035
0.002
0.004
A1
0.01
0.06
0.10
0.000
0.017
0.020
b
0.37
0.44
0.50
0.015
0.006
0.008
c
0.08
0.14
0.20
0.003
0.114
0.120
D
2.80
2.90
3.04
0.110
0.051
0.055
E
1.20
1.30
1.40
0.047
0.075
0.080
e
1.78
1.90
2.04
0.070
0.017
0.022
L
0.30
0.43
0.55
0.012
0.35
0.54
0.69
0.014
0.021
0.027
L1
HE
2.10
2.40
2.64
0.083
0.094
0.104
T
0°
−−−
10 °
0°
−−−
10°
0.25
3
E
1
2
T
HE
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
STYLE 11:
PIN 1. ANODE
2. CATHODE
3. CATHODE−ANODE
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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3
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BAV99LT1/D
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