BAV99L, SBAV99L Dual Series Switching Diode Features • S Prefix for Automotive and Other Applications Requiring Unique • Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com MAXIMUM RATINGS (Each Diode) Rating Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 215 mAdc IFM(surge) 500 mAdc Repetitive Peak Reverse Voltage VRRM 100 V Average Rectified Forward Current (Note 1) (averaged over any 20 ms period) IF(AV) 715 mA Repetitive Peak Forward Current IFRM 450 mA Non−Repetitive Peak Forward Current t = 1.0 ms t = 1.0 ms t = 1.0 s IFSM Peak Forward Surge Current CASE 318 SOT−23 STYLE 11 3 CATHODE/ANODE MARKING DIAGRAM A 2.0 1.0 0.5 A7 MG G Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 A7 = Device Code M = Date Code* G = Pb−Free Package THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range CATHODE 2 ANODE 1 Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Package Shipping† BAV99LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel SBAV99LT1G SOT−23 (Pb−Free) 3,000 / Tape & Reel Device 2.4 mW/°C RqJA 417 °C/W TJ, Tstg −65 to +150 °C 1. FR− 5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in 99.5% alumina. BAV99LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel SBAV99LT3G SOT−23 (Pb−Free) 10,000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 1994 October, 2016 − Rev. 12 1 Publication Order Number: BAV99LT1/D BAV99L, SBAV99L OFF CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode) Characteristic Symbol Reverse Breakdown Voltage, (I(BR) = 100 mA) Min Max Unit 100 − − − − 1.0 30 50 − 1.5 − − − − 715 855 1000 1250 − 6.0 − 1.75 V(BR) mAdc Reverse Voltage Leakage Current, (VR = 100 Vdc) (VR = 25 Vdc, TJ = 150°C) (VR = 70 Vdc, TJ = 150°C) IR Diode Capacitance, (VR = 0, f = 1.0 MHz) CD Forward Voltage, (IF = 1.0 mAdc) (IF = 10 mAdc) (IF = 50 mAdc) (IF = 150 mAdc) VF Reverse Recovery Time, (IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) RL = 100 W trr Forward Recovery Voltage, (IF = 10 mA, tr = 20 ns) Vdc pF mVdc ns VFR V CURVES APPLICABLE TO EACH DIODE 100 IR, REVERSE CURRENT (mA) 100 TA = 150°C TA = 125°C TA = 85°C 10 TA = 55°C TA = 25°C 1 TA = −40°C TA = −55°C 0.1 0 TA = 150°C 10 TA = 125°C 1.0 TA = 85°C TA = 55°C 0.1 0.01 TA = 25°C 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 10 20 30 40 50 VF, FORWARD VOLTAGE (V) VR, REVERSE VOLTAGE (V) Figure 1. Forward Voltage Figure 2. Leakage Current 0.61 Cd, DIODE CAPACITANCE (pF) IF, FORWARD CURRENT (mA) 1000 0.59 0.57 0.55 0.53 0.51 0.49 0.47 0.45 0 1 2 3 4 5 6 VR, REVERSE VOLTAGE (V) Figure 3. Capacitance www.onsemi.com 2 7 8 60 70 BAV99L, SBAV99L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AR D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX 0.039 0.044 A 0.89 1.00 1.11 0.035 0.002 0.004 A1 0.01 0.06 0.10 0.000 0.017 0.020 b 0.37 0.44 0.50 0.015 0.006 0.008 c 0.08 0.14 0.20 0.003 0.114 0.120 D 2.80 2.90 3.04 0.110 0.051 0.055 E 1.20 1.30 1.40 0.047 0.075 0.080 e 1.78 1.90 2.04 0.070 0.017 0.022 L 0.30 0.43 0.55 0.012 0.35 0.54 0.69 0.014 0.021 0.027 L1 HE 2.10 2.40 2.64 0.083 0.094 0.104 T 0° −−− 10 ° 0° −−− 10° 0.25 3 E 1 2 T HE L 3X b L1 VIEW C e TOP VIEW A A1 SIDE VIEW c SEE VIEW C STYLE 11: PIN 1. ANODE 2. CATHODE 3. CATHODE−ANODE END VIEW RECOMMENDED SOLDERING FOOTPRINT* 3X 2.90 3X 0.90 0.95 PITCH 0.80 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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