LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only LED ARRAY LA177B/HG-2 DATA SHEET DOC. NO : QW0905-LA177B/HG-2A REV. : A DATE : 05 - Jan - 2005 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 1/5 PART NO. LA177B/HG-2 Package Dimensions 2.7±0.5 6.35 7.0 4.96 2.9 2.42 □0.5 TYP 3.5± 0.5 2.54 TYP 1 2.54 TYP + 2 5.08 ±0.5 - 3 H G 1.CATHODE RED 2.COMMON ANODE 3.CATHODE GREEN 1 2 3 LHG2692/R1 2.9 3.1 3.3 4.3 6.45±0.5 1.5 MAX H G □0.5 TYP 18.0MIN 1 2 3 1 2 3 2.0MIN 2.0MIN 2.54TYP 2.54TYP 1.CATHODE RED 2.COMMON ANODE 3.CATHODE GREEN Note : 1.All dimension are in millimeter tolerance is ± 0.25mm unless otherwise noted. 2.Specifications are subject to change without not ice. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA177B/HG-2 Page 2/5 Absolute Maximum Ratings at Ta=25 ℃ Ratings Symbol Parameter UNIT H G Forward Current IF 15 30 mA Peak Forward Current Duty 1/10@10KHz IFP 60 120 mA Power Dissipation PD 40 100 mW Reverse Current @5V Ir 10 10 μA Operating Temperature Topr -40 ~ +85 ℃ Storage Temperature Tstg -40 ~ +100 ℃ Soldering Temperature Tsol Max 260 ℃ for 5 sec Max (2mm from body) Typical Electrical & Optical Characteristics (Ta=25 ℃) PART NO COLOR MATERIAL Emitted GaP Red GaP Green Forward Peak Spectral voltage wave halfwidth length △λ nm @20mA(V) λPnm Lens Luminous intensity @10mA(mcd) Min. Max. Min. Typ. Viewing angle 2 θ 1/2 (deg) 697 90 1.7 2.6 0.1 0.25 36 565 30 1.7 2.6 1.2 2.0 36 White Duffused LA177B/HG-2 Note : 1.The forward voltage data did not including ±0.1V testing tolerance. 2. The luminous intensity data did not including ±15% testing tolerance. LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only Page 3/5 PART NO. LA177B/HG-2 Typical Electro-Optical Characteristics Curve H CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.0 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 0.1 2.5 2.0 1.5 1.0 0.5 0.0 2.0 1.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 600 700 800 900 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature(℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 1000 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA177B/HG-2 Page 4/5 Typical Electro-Optical Characteristics Curve G CHIP Fig.1 Forward current vs. Forward Voltage Fig.2 Relative Intensity vs. Forward Current 3.5 Relative Intensity Normalize @20mA Forward Current(mA) 1000 100 10 1.0 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 2.0 1.0 3.0 4.0 5.0 1.0 10 1.2 1.1 1.0 0.9 0.8 0 20 40 60 80 100 Fig.5 Relative Intensity vs. Wavelength 1.0 0.5 0.0 500 550 600 Wavelength (nm) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 Ambient Temperature( ℃) Ambient Temperature( ℃) Relative Intensity@20mA Fig.4 Relative Intensity vs. Temperature Relative Intensity@20mA Normalize @25 ℃ Forward Voltage@20mA Normalize @25 ℃ Fig.3 Forward Voltage vs. Temperature -20 1000 Forward Current(mA) Forward Voltage(V) -40 100 650 80 100 LIGITEK ELECTRONICS CO.,LTD. Property of Ligitek Only PART NO. LA177B/HG-2 Page 5/5 Reliability Test: Test Item Test Condition Description Reference Standard Operating Life Test 1.Under Room Temperature 2.If=20mA 3.t=1000 hrs (-24hrs, +72hrs) This test is conducted for the purpose of detemining the resisance of a part in electrical and themal stressed. MIL-STD-750: 1026 MIL-STD-883: 1005 JIS C 7021: B-1 High Temperature Storage Test 1.Ta=105 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under ondition of hogh temperature for hours. MIL-STD-883:1008 JIS C 7021: B-10 Low Temperature Storage Test 1.Ta=-40 ℃±5℃ 2.t=1000 hrs (-24hrs, +72hrs) The purpose of this is the resistance of the device which is laid under condition of low temperature for hours. High Temperature High Humidity Test 1.Ta=65 ℃±5℃ 2.RH=90 %~95% 3.t=240hrs ±2hrs The purpose of this test is the resistance of the device under tropical for hous. 1.Ta=105 ℃±5℃ &-40 ℃±5 ℃ (10min) (10min) 2.total 10 cycles The purpose of this is the resistance of the device to sudden extreme changes in high and low temperature. MIL-STD-202: 107D MIL-STD-750: 1051 MIL-STD-883: 1011 Solder Resistance Test 1.T.Sol=260 ℃±5℃ 2.Dwell time= 10 ±1sec. This test intended to determine the thermal characteristic resistance of the device to sudden exposures at extreme changes in temperature when soldering the lead wire. MIL-STD-202: 210A MIL-STD-750: 2031 JIS C 7021: A-1 Solderability Test 1.T.Sol=230 ℃±5℃ 2.Dwell time=5 ±1sec This test intended to see soldering well performed or not. MIL-STD-202: 208D MIL-STD-750: 2026 MIL-STD-883: 2003 JIS C 7021: A-2 Thermal Shock Test JIS C 7021: B-12 MIL-STD-202:103B JIS C 7021: B-11