BCR3KM-12 Features • IT(RMS) : 3 A • VDRM : 600 V • IFGT I, IRGT I, IRGT III : 15 mA (10 mA)Note3 • Insulated Type • Planar Passivation Type • UL Recognized : Yellow Card No. E223904 File No. E80271 Outline TO-220FN 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications Electric rice cooker, electric pot, and controller for other heater Maximum Ratings Parameter Symbol Note1 Repetitive peak off-state voltage Non-repetitive peak off-state voltageNote1 VDRM VDSM www.kersemi.com Voltage class 12 600 720 Unit V V BCR3KM-12 Parameter RMS on-state current Symbol IT(RMS) Ratings 3.0 Unit A Surge on-state current ITSM 30 A I2 t 3.7 A2s PGM PG(AV) VGM IGM Tj Tstg — Viso 3 0.3 6 0.5 – 40 to +125 – 40 to +125 2.0 2000 W W V A °C °C g V Min. — — Max. 2.0 1.5 I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 111°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Note2 Gate trigger voltage Symbol IDRM VTM Typ. — — Unit mA V VFGT I — — 1.5 V VRGT I — — 1.5 V VRGT III — — 1.5 V Note2 Note3 Gate trigger current IFGT I — — 15 mA Note3 IRGT I — — 15 mA Note3 IRGT III — — 15 mA Gate non-trigger voltage VGD 0.2 — — V Thermal resistance Rth(j-c) — — 4.0 °C/W Thermal resistance Rth(j-a) — — 50 °C/W Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1) 4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. I II III I II III www.kersemi.com Test conditions Tj = 125°C, VDRM applied Tc = 25°C, ITM = 4.5 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C, VD = 1/2VDRM Note4 Junction to case Junction to ambient BCR3KM-12 Performance Curves 102 7 5 3 2 Rated Surge On-State Current 40 Tj = 25°C Surge On-State Current (A) On-State Current (A) Maximum On-State Characteristics 101 7 5 3 2 100 7 5 3 2 10 5 2 3 4 5 7 101 2 3 4 5 7 102 3 2 PGM = 3W 101 7 5 VGT PG(AV) = 0.3W IGM = 0.5A 100 IRGT I IFGT I, IRGT III VGD = 0.2V 10–1 0 10 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Trigger Current vs. Junction Temperature 103 7 5 4 3 2 102 7 5 4 3 2 101 Typical Example IRGT III IFGT I, IRGT I –60 –40 –20 0 20 40 60 80 100 120 140 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) www.kersemi.com Transient Thermal Impedance (°C/W) Gate Voltage (V) 15 Gate Characteristics (I, II and III) 3 2 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 20 Conduction Time (Cycles at 60Hz) 7 5 101 25 On-State Voltage (V) 102 7 5 30 0 100 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 3 2 35 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) BCR3KM-12 102 On-State Power Dissipation (W) 5.0 7 5 4 3 2 101 7 5 4 3 2 100 2 10 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 4.5 4.0 360° Conduction 3.5 Resistive, 3.0 inductive loads 2.5 2.0 1.5 1.0 0.5 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 140 140 Ambient Temperature (°C) 160 120 100 Curves apply regardless of conduction angle 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 120 × 120 × t2.3 100 × 100 × t2.3 60 × 60 × t2.3 120 100 80 All fins are black painted aluminum and greased 60 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature 140 120 100 80 60 40 20 0 0 Conduction Time (Cycles at 60Hz) 160 Ambient Temperature (°C) Maximum On-State Power Dissipation 0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) 3.0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) www.kersemi.com 105 7 5 Typical Example 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) BCR3KM-12 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) 103 Latching Current vs. Junction Temperature 103 Typical Example 7 5 Latching Current (mA) 7 5 4 3 2 102 7 5 4 3 –60 –40 –20 7 5 3 2 101 7 5 100 0 20 40 60 80 100 120 140 T2+, G– Typical Example 102 3 2 101 Distribution 3 2 2 T2+, G+ Typical Example T2–, G– –60 –40 –20 0 20 40 60 80 100 120 140 Junction Temperature (°C) Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage 160 Typical Example 140 120 100 80 60 40 20 0 –60 –40 –20 0 20 40 60 80 100120 140 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature 160 Typical Example Tj = 125°C 140 120 100 III Quadrant 80 60 I Quadrant 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Gate Trigger Current vs. Gate Current Pulse Width Gate Trigger Characteristics Test Circuits 103 7 5 4 3 IRGT III Typical Example 6Ω 6Ω IRGT I IFGT I 2 A 6V V 102 Test Procedure I 7 5 4 3 6Ω A 6V 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) www.kersemi.com V V 330Ω Test Procedure II 2 101 0 10 A 6V 330Ω 330Ω Test Procedure III BCR3KM-12 Package Dimensions TO-220FN EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material 2.0 Cu alloy 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Plastic Magazine (Tube) 50 Type name +RA Lead form Plastic Magazine (Tube) 50 Type name +RA – Lead forming code Note : Please confirm the specification about the shipping in detail. www.kersemi.com Standard order code example BCR3KM-12RA BCR3KM-12RA-A8 Parameter RMS on-state current Symbol IT(RMS) Ratings 3.0 Unit A Surge on-state current ITSM 30 A I2 t 3.7 A2s PGM PG(AV) VGM IGM Tj Tstg — Viso 3 0.3 6 0.5 – 40 to +150 – 40 to +150 2.0 2000 W W V A °C °C g V Symbol IDRM VTM Min. — — I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature Mass Isolation voltage Conditions Commercial frequency, sine full wave 360° conduction, Tc = 136°C 60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ta = 25°C, AC 1 minute, T1·T2·G terminal to case Notes: 1. Gate open. Electrical Characteristics Parameter Repetitive peak off-state current On-state voltage Note2 Gate trigger voltage Typ. — — Max. 2.0 1.5 Unit mA V VFGT I — — 1.5 V VRGT I — — 1.5 V VRGT III — — 1.5 V Note2 Note3 Gate trigger current IFGT I — — 15 mA Note3 IRGT I — — 15 mA Note3 IRGT III — — 15 mA Gate non-trigger voltage VGD 0.2/0.1 — — V Thermal resistance Rth(j-c) — — 4.0 °C/W Thermal resistance Rth(j-a) — — 50 °C/W Notes: 2. Measurement using the gate trigger characteristics measurement circuit. 3. High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1) 4. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W. I II III I II III www.kersemi.com Test conditions Tj = 150°C, VDRM applied Tc = 25°C, ITM = 4.5 A, Instantaneous measurement Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 25°C, VD = 6 V, RL = 6 Ω, RG = 330 Ω Tj = 125°C/150°C, VD = 1/2VDRM Note4 Junction to case Junction to ambient Maximum On-State Characteristics Rated Surge On-State Current 40 102 Surge On-State Current (A) 3 2 101 7 5 Tj = 150°C 3 2 100 7 5 3 2 Tj = 25°C 10–1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 20 15 10 5 2 3 4 5 7 101 2 3 4 5 7 102 Gate Characteristics (I, II and III) Gate Trigger Current vs. Junction Temperature PGM = 3W 101 7 5 3 VGT 2 PG(AV) = 0.3W IGM = 0.5A IRGT I VGD = 0.1V Gate Trigger Current (Tj = t°C) × 100 (%) Gate Trigger Current (Tj = 25°C) Gate Voltage (V) 25 Conduction Time (Cycles at 60Hz) 10–1 7 IFGT I, IRGT III 5 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 Gate Trigger Voltage (Tj = t°C) × 100 (%) Gate Trigger Voltage (Tj = 25°C) 30 On-State Voltage (V) 5 3 2 100 7 5 3 2 35 0 100 4.0 103 7 5 4 3 2 Typical Example IRGT III 102 I ,I 7 FGT I RGT I 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Gate Current (mA) Junction Temperature (°C) Gate Trigger Voltage vs. Junction Temperature Maximum Transient Thermal Impedance Characteristics (Junction to case) 103 7 5 4 3 2 Typical Example 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) www.kersemi.com Transient Thermal Impedance (°C/W) On-State Current (A) 7 5 102 2 3 5 7 103 2 3 5 7 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 Conduction Time (Cycles at 60Hz) 102 On-State Power Dissipation (W) 5.0 7 5 4 3 2 101 7 5 4 3 2 100 4.5 4.0 360° Conduction 3.5 Resistive, 3.0 inductive loads 2.5 2.0 1.5 1.0 0.5 0 102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) Allowable Case Temperature vs. RMS On-State Current Allowable Ambient Temperature vs. RMS On-State Current 160 140 140 Ambient Temperature (°C) 160 120 Curves apply regardless of conduction angle 100 80 60 40 360° Conduction 20 Resistive, inductive loads 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 120 × 120 × t2.3 100 × 100 × t2.3 120 100 60 × 60 × t2.3 80 60 All fins are black painted aluminum and greased 40 Curves apply regardless of conduction angle 20 Resistive, inductive loads Natural convection 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 RMS On-State Current (A) RMS On-State Current (A) Allowable Ambient Temperature vs. RMS On-State Current Repetitive Peak Off-State Current vs. Junction Temperature Natural convection No Fins Curves apply regardless of conduction angle Resistive, inductive loads 140 120 100 80 60 40 20 0 0 Conduction Time (Cycles at 60Hz) 160 Ambient Temperature (°C) Maximum On-State Power Dissipation 0 0.5 1.0 1.5 2.0 2.5 RMS On-State Current (A) 3.0 Repetitive Peak Off-State Current (Tj = t°C) × 100 (%) Repetitive Peak Off-State Current (Tj = 25°C) Case Temperature (°C) Transient Thermal Impedance (°C/W) Maximum Transient Thermal Impedance Characteristics (Junction to ambient) www.kersemi.com 106 7 5 3 2 Typical Example 105 7 5 3 2 104 7 5 3 2 103 7 5 3 2 102 –60 –40 –20 0 20 40 60 80 100 120 140 160 Junction Temperature (°C) Latching Current vs. Junction Temperature 103 103 Typical Example Latching Current (mA) 7 5 4 3 2 102 7 5 4 3 2 101 –60 –40 –20 0 20 40 60 80 100 120 140 160 Distribution T2+, G– Typical Example 102 7 5 3 2 101 7 5 3 T +, G+ 2 2 Typical Example T2–, G– Junction Temperature (°C) Breakover Voltage vs. Junction Temperature Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=125°C) Typical Example 140 120 100 80 60 40 20 –60 –40 –20 0 20 40 60 80 100 120 140 160 Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Junction Temperature (°C) 160 0 7 5 3 2 100 –60 –40 –20 0 20 40 60 80 100 120 140 160 160 Typical Example Tj = 125°C 140 120 III Quadrant 100 80 60 I Quadrant 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Junction Temperature (°C) Rate of Rise of Off-State Voltage (V/µs) Breakover Voltage vs. Rate of Rise of Off-State Voltage (Tj=150°C) Gate Trigger Current vs. Gate Current Pulse Width 160 Typical Example Tj = 150°C 140 120 100 III Quadrant 80 60 I Quadrant 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 Gate Trigger Current (tw) × 100 (%) Gate Trigger Current (DC) Breakover Voltage (dv/dt = xV/µs) × 100 (%) Breakover Voltage (dv/dt = 1V/µs) Breakover Voltage (Tj = t°C) × 100 (%) Breakover Voltage (Tj = 25°C) Holding Current (Tj = t°C) × 100 (%) Holding Current (Tj = 25°C) Holding Current vs. Junction Temperature Rate of Rise of Off-State Voltage (V/µs) www.kersemi.com 103 7 5 4 3 2 Typical Example IRGT III IRGT I IFGT I 102 7 5 4 3 2 101 0 10 2 3 4 5 7 101 2 3 4 5 7 102 Gate Current Pulse Width (µs) Gate Trigger Characteristics Test Circuits 6Ω Recommended Circuit Values Around The Triac 6Ω Load C1 A 6V 330Ω V Test Procedure I R1 A 6V V 330Ω Test Procedure II 6Ω A 6V V 330Ω Test Procedure III www.kersemi.com C0 R0 C1 = 0.1 to 0.47µF C0 = 0.1µF R1 = 47 to 100Ω R0 = 100Ω TO-220FN EIAJ Package Code JEDEC Code Mass (g) (reference value) Lead Material 2.0 Cu alloy 2.8 ± 0.2 6.5 ± 0.3 3 ± 0.3 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 4.5 ± 0.2 2.54 ± 0.25 2.6 ± 0.2 Symbol Dimension in Millimeters Min Typ Max A A1 A2 b D E e x y y1 ZD ZE Note 1) The dimensional figures indicate representative values unless otherwise the tolerance is specified. Order Code Lead form Standard packing Quantity Standard order code Straight type Plastic Magazine (Tube) 50 Type name +RB Lead form Plastic Magazine (Tube) 50 Type name +RB – Lead forming code Note : Please confirm the specification about the shipping in detail. www.kersemi.com Standard order code example BCR3KM-12RB BCR3KM-12RB-A8