DMG3401LSN 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(on) max -30V 50mΩ @ VGS = -10V 60mΩ @ VGS = -4.5V 85mΩ @ VGS = -2.5V • • • • • • ID TA = 25°C -3.7A -3.3A -2.7A Low Input Capacitance Low On-Resistance Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This new generation Small-Signal enhancement mode MOSFET features low on-resistance and fast switching, making it ideal for high efficiency power management applications. Mechanical Data Applications • • • • • • • Motor control Backlighting DC-DC Converters Power management functions • • Case: SC59 Case Material: Molded Plastic “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Weight: 0.008 grams (approximate) Drain SC59 D Gate Top View S G Source Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMG3401LSN-7 Notes: Case SC59 Packaging 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information G34 Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMG3401LSN Document number: DS35502 Rev. 4 - 2 Mar 3 YM NEW PRODUCT Description G34 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D October 2012 © Diodes Incorporated DMG3401LSN Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = -10V Steady State Continuous Drain Current (Note 6) VGS = -10V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value -30 ±12 -3.0 -2.3 ID A -3.7 -2.9 -30 -1.5 ID Pulsed Drain Current (10µs pulse, duty cycle = 1%) Maximum Body Diode Continuous Current (Note 6) Units V V IDM IS A A A Thermal Characteristics Characteristic Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 6) Total Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Operating and Storage Temperature Range Value 0.8 1.2 159 105 36 -55 to +150 PD RθJA RθJC TJ, TSTG Units W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Body Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1.0 ±100 V µA nA VGS = 0V, ID = -250μA VDS =-30V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD -1.0 41 47 60 12 -0.8 -1.3 50 60 85 -1.0 V Static Drain-Source On-Resistance -0.5 - S V VDS = VGS, ID = -250μA VGS = -10V, ID = -4A VGS = -4.5V, ID = -3.5A VGS = -2.5V, ID = -2.5A VDS = -5V, ID = -4A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 1326 103 71 7.3 11.6 25.1 2 1.7 8 13 71 38 - pF VDS = -15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDD = -15V, ID = -4A nS VDS = -15V, VGS = -10V, RGEN = 6Ω, RL = 3.75Ω Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ Test Condition 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing DMG3401LSN Document number: DS35502 Rev. 4 - 2 2 of 6 www.diodes.com October 2012 © Diodes Incorporated DMG3401LSN 20 20 VGS = -10V VDS = -5.0V VGS = -4.5V 12 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) 16 VGS = -2.5V VGS = -2.0V 8 12 8 4 4 T A = 150 °C VGS = -1.5V 0 0.5 1.0 1.5 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics T A = 125 °C RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.12 0.10 VGS = -1.8V 0.08 0.06 VGS = -2.5V VGS = -4.5V 0.04 0.02 0 0 4 8 12 16 -ID, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 2.0 T A = -55°C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4.0 ID = -4.3A 0.10 ID = -2.5A 0.08 0.06 0.04 0.02 20 0.10 0 0 2 4 6 8 10 -VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Drain-Source On-Resistance vs. Gate-Source Voltage 1.6 VGS = -4.5V 0.08 T A = 150 °C T A = 125 °C 0.06 T A = 85°C TA = 25°C 0.04 TA = -55° C 0.02 0 TA = 85°C TA = 25°C 0.12 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT 16 0 4 8 12 16 -ID, DRAIN SOURCE CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMG3401LSN Document number: DS35502 Rev. 4 - 2 20 3 of 6 www.diodes.com VGS = -4.5V ID = -5A 1.4 VGS = -10V ID = -10A 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature October 2012 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.4 0.08 VGS = -4.5V ID = -5A 0.06 VGS = -10V ID = -10A 0.04 0.02 1.2 1.0 0.8 -ID = 250µA 0.6 -ID = 1mA 0.4 0.2 0 -50 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature 10,000 20 CT, JUNCTION CAPACITANCE (pF) f = 1MHz -IS, SOURCE CURRENT (A) 16 TA = 25°C 12 8 4 0 0 1,000 Ciss Coss 100 Crss 10 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 0 RDS(on) Limited -ID, DRAIN CURRENT (A) 8 VDS = -15V ID = -4.3A 6 4 2 0 5 10 15 20 25 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 30 100 10 -VGS, GATE-SOURCE VOLTAGE (V) NEW PRODUCT DMG3401LSN PW = 10µs 10 DC 1 PW = 10s PW = 1s 0.1 PW = 100ms PW = 10ms PW = 1ms TJ(max) = 150°C PW = 100µs T = 25°C A VGS = -10V Single Pulse DUT on 1 * MRP Board 0 4 8 12 16 20 24 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate-Charge Characteristics DMG3401LSN Document number: DS35502 Rev. 4 - 2 28 0.01 0.1 4 of 6 www.diodes.com 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 October 2012 © Diodes Incorporated DMG3401LSN r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 160°C/W Duty Cycle, D = t1/ t2 D = 0.005 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Figure 13 Transient Thermal Resistance 10 100 1,000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SC59 Min Max Typ 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D 0.95 G 1.90 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 N 0.70 0.80 0.75 0° 8° α All Dimensions in mm Dim A B C G H K M N J L D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X DMG3401LSN Document number: DS35502 Rev. 4 - 2 Dimensions Value (in mm) Z 3.4 X 0.8 Y 1.0 2.4 C 1.35 E E 5 of 6 www.diodes.com October 2012 © Diodes Incorporated DMG3401LSN IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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