MASWSS0161 High Power GaAs SPDT Switch DC - 2.0 GHz Rev. V3 Functional Schematic Features • • • • • • • • • • • Positive Supply and Control Voltages 1 dB Compression Point: +36 dBm Typical, 8 V 3rd Order Intercept Point: +65 dBm Typical, 8 V Low Insertion Loss: 0.4 dB Typical Low Power Consumption: 100 µW Fast Switching Speed Lead-Free SOIC-8 Plastic Package 100% Matte Tin Plating over Copper Halogen-Free “Green” Mold Compound 260°C Re-flow Compatible RoHS* Compliant Version of SW-277 8 7 6 5 1 2 3 4 Description M/A-COM’s MASWSS0161 is a GaAs MMIC SPDT switch in a lead free SOIC-8 lead surface mount plastic package. The MASWSS0161 is ideally suited for use where low power consumption is required. Typical applications include transmit/receive switching, switch matrices and switched filter banks in systems such as radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered radio equipment. The MASWSS0161 is fabricated using a monolithic GaAs MMIC using a mature 1 micron process. The process features full chip passivation for increased performance and reliability. Pin Configuration Pin No. Description Pin No. Description 1 Ground, Thermal Contact 5 RF Port 1 3 2 VDD 6 Control A 3 RFC 7 Control B 4 Ground, Thermal Contact 8 RF Port 2 3 3. External DC blocking capacitors required on all RF ports. Absolute Maximum Ratings 4,5 Ordering Information 1 Parameter Absolute Maximum +37 dBm +40 dBm +42 dBm 1.0 W Part Number Package MASWSS0161 Bulk Packaging Input Power - 0.5 - 2.0 GHz 5 V Control and Supply 8 V Control and Supply 10 V Control and Supply MASWSS0161TR 1000 piece reel Power Dissipation 1. Reference Application Note M513 for reel size information. Truth Table 2 Control Inputs Condition of Switch RF Common to Each RF Port A B RF1 RF2 1 0 Off On 0 1 On Off 2. “0” = 0 to +0.2 V @ 20 mA maximum. “1” = +5 V @ 20 mA typical to 10 V @ 500 mA maximum. 1 3 Supply Voltage -1 V ≤ VDD ≤ + 12 V Control Voltage -1 V ≤ VC ≤ VDD + 0.2 V Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C Thermal Resistance 4. 5. 6. 6 θjc = 87°C/W Exceeding any one or combination of these limits may cause permanent damage to this device. M/A-COM does not recommend sustained operation near these survivability limits. Thermal resistance is given for TA = 25°C. TCASE is the temperature of leads 1 and 4. * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASWSS0161 High Power GaAs SPDT Switch DC - 2.0 GHz Rev. V3 Electrical Specifications 7: TA = +25°C, VDD = +5 V, VC = +5 V / 0 V, PIN = +30 dBm Parameter Test Conditions Units Min. Typ.8 Max. Insertion Loss DC - 0.5 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz dB dB dB — — — 0.45 0.55 0.6 — 0.65 — Isolation DC - 0.5 GHz 0.5 - 1.0 GHz 1.0 - 2.0 GHz dB dB dB — 27 — 30 32 27 — — — VSWR DC - 2.0 GHz Ratio — 1.2:1 — 1 dB Compression Input Power (5 V Supply/Control) 0.9 GHz Input Power (8 V Supply/Control) 0.9 GHz dBm dBm — — 33 35.8 — — Trise, Tfall 10% to 90% RF, 90% to 10% RF nS — 30 — Ton, Toff 50% Control to 90% RF, 50% Control to 10% RF nS — 35 — Transients In-Band mV — 12 — 3rd Order Intercept Measured Relative to Input Power, two-tone up to +10 dBm (5 V Supply/Control) 0.9 GHz (8 V Supply/Control) 0.9 GHz dBm dBm — — 55 65 — — Control Current VC = +5 V µA — — 20 Supply Current VDD = +5 V µA — — 60 7. All specifications apply when operated with control voltages of 0 V for VC low and 5 to 10 V for VC high, and 50 W impedance at all RF ports, unless otherwise specified. High power (greater than 1 W) handling specifications apply to cold switching only. For input powers under 1 W, hot switching can be used. The high control voltage must be within ± 0.2 V of the supply voltage. External DC blocking capacitors are required on all RF ports. 8. Typical values listed for middle of frequency range noted. Lead-Free SOIC-8† † Reference Application Note M538 for lead-free solder reflow recommendations. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice. MASWSS0161 High Power GaAs SPDT Switch DC - 2.0 GHz Rev. V3 Typical Performance Curves Isolation Insertion Loss 1.0 40 0.8 35 0.6 30 +25°C -40°C +85°C 0.4 25 +25°C -40°C 85°C 0.2 20 0.0 0.5 1.0 1.5 2.0 15 0.5 1.0 1.5 2.0 Frequency (GHz) Frequency (GHz) VSWR Compression vs. Control Voltage @ 900 MHz 2.0 40 +25°C -40°C +85°C 1dB .1dB 35 1.8 30 1.6 25 1.4 20 1.2 1.0 0.5 15 1.0 1.5 2.0 Frequency (GHz) 10 3 4 5 6 7 8 9 10 Control Voltage (VDC) Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions • North America Tel: 800.366.2266 / Fax: 978.366.2266 is considering for development. Performance is based on target specifications, simulated results, • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and/or prototype measurements. Commitment to develop is not guaranteed. • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make Commitment to produce in volume is not guaranteed. changes to the product(s) or information contained herein without notice.