SavantIC Semiconductor Product Specification NS50B Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type NS50A APPLICATIONS ·For medium power linear switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 5 V IC Collector current (DC) 6 A ICM Collector current-Pulse 10 A PC Collector power dissipation TC=25 65 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -65~150 SavantIC Semiconductor Product Specification NS50B Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX VCEO(SUS) Collector-emitter sustaining voltage IC=30mA; IB=0 VCE(sat) Collector-emitter saturation voltage IC=4A; IB=0.4A 1.0 V VBE(sat) Base-emitter saturation voltage IC=4A; IB=0.4A 1.5 V ICBO Collector cut-off current VCB=100V; IE=0 10 µA ICEO Collector cut-off current VCE=60V; IB=0 0.1 mA IEBO Emitter cut-off current VEB=6V; IC=0 10 µA hFE DC current gain IC=1A ; VCE=5V Transition frequency IC=0.5A ; VCE=10V fT 2 60 UNIT 100 3 V 160 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 NS50B