CYStech Electronics Corp. N-CHANNEL MOSFET Spec. No. : C570N3 Issued Date : 2012.02.03 Revised Date : 2012.07.30 Page No. : 1/7 BVDSS ID RDSON(max) @VGS=10V RDSON(max) @VGS=4V MTN3418CN3 30V 1.4A 300mΩ 450mΩ Description The MTN3418CN3 is a N-channel enhancement-mode MOSFET. Features • Low on-resistance • High ESD • High speed switching • Low-voltage drive(2V) • Easily designed drive circuits • Easy to use in parallel • Pb-free package Symbol Outline MTN3418CN3 D SOT-23 D G S G G：Gate S：Source D：Drain S Ordering Information Device MTN3418CN3 MTN3418CN3 Package SOT-23 (Pb-free) Shipping Marking 3000 pcs / Tape & Reel MCX CYStek Product Specification CYStech Electronics Corp. Spec. No. : C570N3 Issued Date : 2012.02.03 Revised Date : 2012.07.30 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDSS VGSS ID IDP PD Continuous Pulsed Drain Current Limits 30 ±20 1.4 5.6 *1 900 *2 700 *3 +150 -55~+150 Total Power Dissipation ESD susceptibility Channel Temperature Storage Temperature TCH Tstg Unit V V A A mW V °C °C Note : *1. Pulse Width ≤ 300μs, Duty cycle ≤2% *2. When the device is mounted on a ceramic board with area measuring 30mm × 30mm × 0.8mm *3. Human body model, 1.5kΩ in series with 100pF Thermal Performance Parameter Symbol Limit Thermal Resistance, Junction-to-Ambient(PCB mounted) Rth,ja 139 (Note) Thermal Resistance, Junction-to-Case Rth,jc 80 Unit °C/W Note : When the device is mounted on a ceramic board with area measuring 30mm × 30mm × 0.8mm. Electrical Characteristics (Ta=25°C) Symbol Min. Typ. Max. Static BVDSS* VGS(th) IGSS IDSS RDS(ON)* 30 1 400 GFS Dynamic Ciss Coss Crss Source-Drain Diode *VSD - 220 220 300 325 - 2.5 ±10 500 300 300 450 450 - 60 16 9 - Unit V V μA nA Test Conditions mS VGS=0, ID=10μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=30V, VGS=0 ID=700mA, VGS=10V ID=1.4A, VGS=10V ID=400mA, VGS=4V ID=1.4A, VGS=4V VDS=10V, ID=700mA - pF VDS=10V, VGS=0, f=1MHz 1.2 V VGS=0V, ISD=1.4A mΩ *Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2% MTN3418CN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C570N3 Issued Date : 2012.02.03 Revised Date : 2012.07.30 Page No. : 3/7 Typical Characteristics Static Drain-Source On-resistance vs Ambient Temperature Typical Output Characteristics 500 2.2 2 ID, Drain Current(A) 1.8 RDS(on) , Static Drain-Source On-state Resistance(mΩ) 10V, 9V, 8V, 7V, 6V, 5V, 4.5V, 4V, 3.5V VGS=3V 1.6 1.4 VGS=2.5V 1.2 1 0.8 0.6 VGS=2V 0.4 450 ID=1.4A, VGS=4V 400 350 300 250 ID=1.4A, VGS=10V 0.2 200 0 0 1 2 3 4 5 6 7 8 9 0 10 50 100 150 TA, Ambient Temperature(°C) VDS, Drain-Source Voltage(V) Drain Current vs Gate-Source Voltage Static Drain-Source On-State resistance vs Drain Current 10 R DS(on), Static Drain-Source On-State Resistance(mΩ) 1000 9 TA=25°C ID, Drain Current(A) 8 VGS=4V VGS=10V 7 6 5 4 3 2 1 0 100 1 10 100 1000 ID, Drain Current(mA) 0 10000 400 IF, Forward Drain Current(mA) TA=25°C ID=1.4A 350 300 250 200 150 100 2 3 4 5 6 7 8 VGS, Gate-Source Voltage(V) 9 10 10000 500 450 1 Forward Drain Current vs Source-Drain Voltage Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(on), Static Drain-Source OnState Resistance(mΩ) 200 Tj=25°C VGS=0V 1000 100 10 50 1 0 0 MTN3418CN3 2 4 6 8 10 VGS , Gate-Source Voltage(V) 12 0.4 0.6 0.8 1 1.2 VSD, Source Drain Voltage(V) 1.4 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C570N3 Issued Date : 2012.02.03 Revised Date : 2012.07.30 Page No. : 4/7 Typical Characteristics(Cont.) Forward Transfer Admittance vs Drain Current Capacitance vs Reverse Voltage 100 GFS, Forward Transfer Admittance---(S) 10 Capacitance-(pF) Ciss Coss 10 Crss f=1MHz VDS=10V 1 0.1 0.01 1 0 5 10 15 20 25 VDS , Drain-to-Source Voltage(V) 1 30 10 100 Drain Current---ID(mA) Power Derating Curve Maximum Safe Operating Area 1000 10 Power Dissipation---PD(mW) ID, Drain Current (A) 900 100μs RDS(ON) Limited 1ms 1 10ms 100ms 0.1 Ta=25°C, Single pulse, mounted on a ceramic board(900mm² ×0.8mm) DC Mounted on a ceramic board (900mm² ×0.8mm) 800 700 600 500 400 300 200 100 0 0.01 0.1 1 10 VDS, Drain-Source Voltage(V) 0 100 200 60 1.5 BVDSS, Drain-Source Breakdown Voltage(V) 1.6 VDS=10V ID=1mA 1.4 1.3 1.2 1.1 1 55 50 45 40 35 30 0.9 25 0.8 -100 20 -100 MTN3418CN3 50 100 150 Ambient Temperature---TA(℃) Brekdown Voltage vs Ambient Temperature Gate Threshold Voltage vs Ambient Temperature VGS(th) , Gate SourceThreshold Voltage-(V) 1000 -50 0 50 100 150 Junction Temperature-Tj(°C) 200 ID=250μA, VGS=0V -50 0 50 100 150 Tj, Junction Temperature(°C) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C570N3 Issued Date : 2012.02.03 Revised Date : 2012.07.30 Page No. : 5/7 Reel Dimension Carrier Tape Dimension MTN3418CN3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C570N3 Issued Date : 2012.02.03 Revised Date : 2012.07.30 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN3418CN3 CYStek Product Specification Spec. No. : C570N3 Issued Date : 2012.02.03 Revised Date : 2012.07.30 Page No. : 7/7 CYStech Electronics Corp. SOT-23 Dimension L 3 B Date Code MCX S □□ Marking: A 2 1 G V 3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 C D K H J Style : Pin 1.Gate 2.Source 3.Drain *:Typical Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040 DIM A B C D G H Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10 DIM J K L S V Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65 Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN3418CN3 CYStek Product Specification