DPG 30 C 400 PB V RRM = 400 V I FAV = 2x 15 A t rr = 45 ns HiPerFRED² High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode Part number 1 2 3 DPG 30 C 400 PB Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche voltage rated for reliable operation ● Soft reverse recovery for low EMI/RFI ● Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch ● Antiparallel diode for high frequency switching devices ● Antisaturation diode ● Snubber diode ● Free wheeling diode ● Rectifiers in switch mode power supplies (SMPS) ● Uninterruptible power supplies (UPS) ● Housing: TO-220 Conditions ●rIndustry standard outline ●rEpoxy meets UL 94V-0 ●rRoHS compliant Ratings Symbol Definition VRRM max. repetitive reverse voltage IR reverse current VF forward voltage I FAV average forward current VF0 threshold voltage rF slope resistance thermal resistance junction to case T VJ virtual junction temperature Ptot total power dissipation I FSM max. forward surge current I RM max. reverse recovery current CJ junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved max. Unit V VR = 400 V 1 µA VR = 400 V TVJ = 150 °C 0.18 mA TVJ = 25 °C 1.39 V 1.63 V 1.14 V 1.40 V IF = 15 A IF = 30 A IF = 15 A IF = 30 A rectangular TVJ = 150 °C d = 0.5 TC = 140°C 15 A TVJ = 175°C 0.84 V 16.5 mΩ 1.70 K/W 175 °C TC = 25 °C 90 W TVJ = 45°C 190 A -55 t = 10 ms (50 Hz), sine IF = reverse recovery time typ. 400 for power loss calculation only R thJC t rr min. TVJ = 25 °C TVJ = 25 °C 15 A; VR = 270 V -di F /dt = 200 A/µs VR = 200 V; f = 1 MHz TVJ = 25 °C 4 A TVJ = 125°C 5.5 A TVJ = 25 °C 45 ns TVJ = 125°C 70 ns TVJ = 25 °C 16 pF Data according to IEC 60747and per diode unless otherwise specified 20100127a DPG 30 C 400 PB Ratings Symbol Definition min. Conditions I RMS RMS current RthCH thermal resistance case to heatsink Tstg storage temperature per pin max. Unit 35 0.50 -55 Weight A K/W 150 °C 2 MD mounting torque FC mounting force with clip 1) typ. 1) g 0.4 0.6 Nm 20 60 N IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip. In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting the backside. Product Marking Part number Marking on product Logo DateCode Assembly Code Ordering Standard abcdef YYWW = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Common Cathode Reverse Voltage [V] TO-220AB (3) XXXXXX Part Name DPG 30 C 400 PB Similar Part DPG30C400HB IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved D P G 30 C 400 PB Marking on Product DPG30C400PB Package TO-247AD (3) Delivering Mode Tube Base Qty Code Key 50 507157 Voltage Class 400 Data according to IEC 60747and per diode unless otherwise specified 20100127a DPG 30 C 400 PB Outlines TO-220 Dim. Millimeter Min. Max. Inches Min. Max. A B 12.70 13.97 14.73 16.00 0.500 0.550 0.580 0.630 C D 9.91 3.54 10.66 4.08 0.390 0.420 0.139 0.161 E F 5.85 2.54 6.85 3.18 0.230 0.270 0.100 0.125 G H 1.15 2.79 1.65 5.84 0.045 0.065 0.110 0.230 J K 0.64 2.54 1.01 BSC 0.025 0.040 0.100 BSC M N 4.32 1.14 4.82 1.39 0.170 0.190 0.045 0.055 Q R 0.35 2.29 0.56 2.79 0.014 0.022 0.090 0.110 M C B E D F N A H G J K L IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved Q R Data according to IEC 60747and per diode unless otherwise specified 20100127a DPG 30 C 400 PB 80 0.4 TVJ = 125°C 70 30 A 12 15 A 10 7.5 A IRM 8 IF = 30 A VR = 270 V 60 0.3 IF = 15 A IF = 7.5 A IF 50 Qrr 40 [A] 0.2 6 [A] [µC] 30 TVJ = 25°C 150°C 20 4 0.1 TVJ = 125°C 2 10 VR = 270 V 0 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0 0 VF [V] Fig. 1 Forward current IF vs. VF 100 200 300 400 500 600 -diF /dt [A/µs] 0 -diF /dt [A/µs] Fig. 3 Typ. peak reverse current I RM versus -di F /dt Fig. 2 Typ. reverse recovery charge Qrr versus -diF /dt 1.4 100 200 300 400 500 600 120 18 TVJ = 125°C VR = 270 V 1.2 100 450 TVJ = 125°C 16 400 IF = 15 A VR = 270 V 14 350 1.0 0.8 trr Kf IRM 0.6 [ns] 80 VFR IF = 30 A 60 12 300 10 250 tfr 200 [ns] 150 V] 8 6 0.4 40 Qrr 0.2 15 A 7.5 A 0.0 40 80 120 TVJ [°C] 160 tfr 2 20 0 VFR 4 50 0 0 100 200 300 400 500 600 0 -diF /dt [A/µs] Fig. 4 Dynamic parameters Qrr, IRM versus TVJ Fig. 5 Typ. recovery time trr vs. -diF /dt 25 100 0 100 200 300 400 500 600 -diF /dt [A/µs] Fig. 6 Typ. peak forward voltage VFR and tfr versus diF /dt 2.0 TVJ = 125°C VR = 270 V 20 1.6 Erec IF = 30 A 15 IF = 15 A [µJ] IF = 7.5 A ZthJC 1.2 [K/W] 10 0.8 5 0.4 0 0.0 0 100 200 300 400 500 600 -diF /dt [A/µs] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. © 2010 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per diode unless otherwise specified 20100127a