ELM ELM36600EA-S Complementary mosfet Datasheet

㪚㫆㫄㫇㫃㪼㫄㪼㫅㫋㪸㫉㫐㩷㪤㪦㪪㪝㪜㪫㩷
㪜㪣㪤㪊㪍㪍㪇㪇㪜㪘㪄㪪
䂓㪞㪼㫅㪼㫉㪸㫃㩷㪛㪼㫊㪺㫉㫀㫇㫋㫀㫆㫅䇭
䂓㪝㪼㪸㫋㫌㫉㪼㫊
㩷 㪜㪣㪤㪊㪍㪍㪇㪇㪜㪘㪄㪪㩷 㫌㫊㪼㫊㩷 㪸㪻㫍㪸㫅㪺㪼㪻㩷 㫋㫉㪼㫅㪺㪿㩷
㫋㪼㪺㪿㫅㫆㫃㫆㪾㫐㩷 㫋㫆㩷 㫇㫉㫆㫍㫀㪻㪼㩷 㪼㫏㪺㪼㫃㫃㪼㫅㫋㩷 㪩㪻㫊㩿㫆㫅㪀㩷
㪸㫅㪻㩷㫃㫆㫎㩷㪾㪸㫋㪼㩷㪺㪿㪸㫉㪾㪼㪅㩷
㩷㩷㩷㪥㪄㪺㪿㪸㫅㫅㪼㫃㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㪧㪄㪺㪿㪸㫅㫅㪼㫃
䊶 㪭㪻㫊㪔㪊㪇㪭㩷
㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㪭㪻㫊㪔㪄㪊㪇㪭㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷
䊶 㪠㪻㪔㪊㪅㪌㪘㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㪠㪻㪔㪄㪉㪘㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷㩷
䊶 㪩㪻㫊㩿㫆㫅㪀㩷㪓㩷㪍㪏㫄㱅㩿㪭㪾㫊㪔㪈㪇㪭㪀㩷㩷㩷㩷㪩㪻㫊㩿㫆㫅㪀㩷㪓㩷㪈㪋㪌㫄㱅㩿㪭㪾㫊㪔㪄㪈㪇㪭㪀㩷㩷㩷㩷
䊶㩷㪩㪻㫊㩿㫆㫅㪀㩷㪓㩷㪐㪏㫄㱅㩿㪭㪾㫊㪔㪋㪅㪌㪭㪀㩷㩷㩷㩷㩷㪩㪻㫊㩿㫆㫅㪀㩷㪓㩷㪉㪋㪌㫄㱅㩿㪭㪾㫊㪔㪄㪋㪅㪌㪭㪀
䂓㪤㪸㫏㫀㫄㫌㫄㩷㪘㪹㫊㫆㫃㫌㫋㪼㩷㪩㪸㫋㫀㫅㪾㫊
㪧㪸㫉㪸㫄㪼㫋㪼㫉
㪛㫉㪸㫀㫅㪄㫊㫆㫌㫉㪺㪼㩷㫍㫆㫃㫋㪸㪾㪼
㪞㪸㫋㪼㪄㫊㫆㫌㫉㪺㪼㩷㫍㫆㫃㫋㪸㪾㪼
㪚㫆㫅㫋㫀㫅㫌㫆㫌㫊㩷㪻㫉㪸㫀㫅㩷㪺㫌㫉㫉㪼㫅㫋
㪪㫐㫄㪹㫆㫃
㪭㪻㫊
㪭㪾㫊
㪫㪸㪔㪉㪌㷄㩷
㪫㪸㪔㪎㪇㷄
㪠㪻
㪧㫌㫃㫊㪼㪻㩷㪻㫉㪸㫀㫅㩷㪺㫌㫉㫉㪼㫅㫋
㪠㪻㫄
㪫㪸㪔㪉㪌㷄㩷
㪧㫆㫎㪼㫉㩷㪻㫀㫊㫊㫀㫇㪸㫋㫀㫆㫅
㪫㪸㪔㪎㪇㷄
㪡㫌㫅㪺㫋㫀㫆㫅㩷㪸㫅㪻㩷㫊㫋㫆㫉㪸㪾㪼㩷㫋㪼㫄㫇㪼㫉㪸㫋㫌㫉㪼㩷㫉㪸㫅㪾㪼
㪧㪻
㪫㫁㪃㪫㫊㫋㪾
㪥㪄㪺㪿㩷㩿㪤㪸㫏㪅㪀
㪊㪇
㫧㪉㪇
㪊㪅㪌
㪉㪅㪏
㪈㪇
㪈㪅㪈㪌
㪇㪅㪎㪊
㪄㪌㪌㩷㫋㫆㩷㪈㪌㪇
㪧㪄㪺㪿㩷㩿㪤㪸㫏㪅㪀
㪄㪊㪇
㫧㪉㪇
㪄㪉㪅㪊
㪄㪈㪅㪏
㪄㪈㪇
㪈㪅㪈㪌
㪇㪅㪎㪊
㪄㪌㪌㩷㫋㫆㩷㪈㪌㪇
㪬㫅㫀㫋 㪥㫆㫋㪼
㪭
㪭
㪘
㪘
㪈
㪮
㷄
䂓㪫㪿㪼㫉㫄㪸㫃㩷㪚㪿㪸㫉㪸㪺㫋㪼㫉㫀㫊㫋㫀㪺㫊
㪧㪸㫉㪸㫄㪼㫋㪼㫉㩷
㪤㪸㫏㫀㫄㫌㫄㩷㫁㫌㫅㪺㫋㫀㫆㫅㪄㫋㫆㪄㪸㫄㪹㫀㪼㫅㫋
㪤㪸㫏㫀㫄㫌㫄㩷㫁㫌㫅㪺㫋㫀㫆㫅㪄㫋㫆㪄㪸㫄㪹㫀㪼㫅㫋
㪤㪸㫏㫀㫄㫌㫄㩷㫁㫌㫅㪺㫋㫀㫆㫅㪄㫋㫆㪄㫃㪼㪸㪻
㪤㪸㫏㫀㫄㫌㫄㩷㫁㫌㫅㪺㫋㫀㫆㫅㪄㫋㫆㪄㪸㫄㪹㫀㪼㫅㫋
㪤㪸㫏㫀㫄㫌㫄㩷㫁㫌㫅㪺㫋㫀㫆㫅㪄㫋㫆㪄㪸㫄㪹㫀㪼㫅㫋
㪤㪸㫏㫀㫄㫌㫄㩷㫁㫌㫅㪺㫋㫀㫆㫅㪄㫋㫆㪄㫃㪼㪸㪻
㪪㫐㫄㪹㫆㫃
㫋㻟㪌㫊
㪪㫋㪼㪸㪻㫐㪄㫊㫋㪸㫋㪼
㪪㫋㪼㪸㪻㫐㪄㫊㫋㪸㫋㪼
㫋㻟㪌㫊
㪪㫋㪼㪸㪻㫐㪄㫊㫋㪸㫋㪼
㪪㫋㪼㪸㪻㫐㪄㫊㫋㪸㫋㪼
㪩㱔㫁㪸
㪛㪼㫍㫀㪺㪼
㪫㫐㫇㪅
㪥㪄㪺㪿
㪩㱔㫁㫃
㪩㱔㫁㪸
㪧㪄㪺㪿
㪩㱔㫁㫃
㪤㪸㫏㪅
㪈㪈㪇
㪈㪌㪇
㪏㪇
㪈㪈㪇
㪈㪌㪇
㪏㪇
㪬㫅㫀㫋
㪥㫆㫋㪼
㷄㪆㪮
㷄㪆㪮
㪈㪅 㪧㫌㫃㫊㪼㩷㫎㫀㪻㫋㪿㩷㫃㫀㫄㫀㫋㪼㪻㩷㪹㫐㩷㫄㪸㫏㫀㫄㫌㫄㩷㫁㫌㫅㪺㫋㫀㫆㫅㩷㫋㪼㫄㫇㪼㫉㪸㫋㫌㫉㪼㪅㩷
㪉㪅 㪛㫌㫋㫐㩷㪺㫐㪺㫃㪼㩷㻟㩷㪈䋦㪅
䂓㪧㫀㫅㩷㪚㫆㫅㪽㫀㪾㫌㫉㪸㫋㫀㫆㫅㩷
㪪㪦㪫㪄㪉㪍㩷㩿㪫㪦㪧㩷㪭㪠㪜㪮㪀
䂓㪚㫀㫉㪺㫌㫀㫋
䊶 㪥䋭㪺㪿
㪧㫀㫅㩷㪥㫆㪅
㪈
㪉
㪊
㪋
㪌
㪍
㪧㫀㫅㩷㫅㪸㫄㪼
㪞㪘㪫㪜㪈
㪪㪦㪬㪩㪚㪜㪉
㪞㪘㪫㪜㪉
㪛㪩㪘㪠㪥㪉
㪪㪦㪬㪩㪚㪜㪈
㪛㪩㪘㪠㪥㪈
䊶 㪧䋭㪺㪿
㪛㪈
㪞㪈
㪞㪉
㪪㪈
㪎㪄 㪈
㪛㪉
㪪㪉
㪚㫆㫄㫇㫃㪼㫄㪼㫅㫋㪸㫉㫐㩷㪤㪦㪪㪝㪜㪫㩷
㪜㪣㪤㪊㪍㪍㪇㪇㪜㪘㪄㪪
䂓㪜㫃㪼㪺㫋㫉㫀㪺㪸㫃㩷㪚㪿㪸㫉㪸㪺㫋㪼㫉㫀㫊㫋㫀㪺㫊㩷㩿㪥㪄㪺㪿㪀
㪧㪸㫉㪸㫄㪼㫋㪼㫉
㪪㪫㪘㪫㪠㪚㩷㪧㪘㪩㪘㪤㪜㪫㪜㪩㪪
㪛㫉㪸㫀㫅㪄㫊㫆㫌㫉㪺㪼㩷㪹㫉㪼㪸㫂㪻㫆㫎㫅㩷㫍㫆㫃㫋㪸㪾㪼
㪱㪼㫉㫆㩷㪾㪸㫋㪼㩷㫍㫆㫃㫋㪸㪾㪼㩷㪻㫉㪸㫀㫅㩷㪺㫌㫉㫉㪼㫅㫋
㪞㪸㫋㪼㪄㪹㫆㪻㫐㩷㫃㪼㪸㫂㪸㪾㪼㩷㪺㫌㫉㫉㪼㫅㫋
㪞㪸㫋㪼㩷㫋㪿㫉㪼㫊㪿㫆㫃㪻㩷㫍㫆㫃㫋㪸㪾㪼
㪦㫅㩷㫊㫋㪸㫋㪼㩷㪻㫉㪸㫀㫅㩷㪺㫌㫉㫉㪼㫅㫋
㪪㫋㪸㫋㫀㪺㩷㪻㫉㪸㫀㫅㪄㫊㫆㫌㫉㪺㪼㩷㫆㫅㪄㫉㪼㫊㫀㫊㫋㪸㫅㪺㪼
㪝㫆㫉㫎㪸㫉㪻㩷㫋㫉㪸㫅㫊㪺㫆㫅㪻㫌㪺㫋㪸㫅㪺㪼
㪛㫀㫆㪻㪼㩷㪽㫆㫉㫎㪸㫉㪻㩷㫍㫆㫃㫋㪸㪾㪼
㪛㪰㪥㪘㪤㪠㪚㩷㪧㪘㪩㪘㪤㪜㪫㪜㪩㪪
㪠㫅㫇㫌㫋㩷㪺㪸㫇㪸㪺㫀㫋㪸㫅㪺㪼
㪦㫌㫋㫇㫌㫋㩷㪺㪸㫇㪸㪺㫀㫋㪸㫅㪺㪼
㪩㪼㫍㪼㫉㫊㪼㩷㫋㫉㪸㫅㫊㪽㪼㫉㩷㪺㪸㫇㪸㪺㫀㫋㪸㫅㪺㪼
㪪㪮㪠㪫㪚㪟㪠㪥㪞㩷㪧㪘㪩㪘㪤㪜㪫㪜㪩㪪
㪫㫆㫋㪸㫃㩷㪾㪸㫋㪼㩷㪺㪿㪸㫉㪾㪼
㪞㪸㫋㪼㪄㫊㫆㫌㫉㪺㪼㩷㪺㪿㪸㫉㪾㪼
㪞㪸㫋㪼㪄㪻㫉㪸㫀㫅㩷㪺㪿㪸㫉㪾㪼
㪫㫌㫉㫅㪄㫆㫅㩷㪻㪼㫃㪸㫐㩷㫋㫀㫄㪼
㪫㫌㫉㫅㪄㫆㫅㩷㫉㫀㫊㪼㩷㫋㫀㫄㪼
㪫㫌㫉㫅㪄㫆㪽㪽㩷㪻㪼㫃㪸㫐㩷㫋㫀㫄㪼
㪫㫌㫉㫅㪄㫆㪽㪽㩷㪽㪸㫃㫃㩷㫋㫀㫄㪼
㪙㫆㪻㫐㪄㪻㫀㫆㪻㪼㩷㫉㪼㫍㪼㫉㫊㪼㩷㫉㪼㪺㫆㫍㪼㫉㫐㩷㫋㫀㫄㪼
㪥㪦㪫㪜㩷㪑
㪪㫐㫄㪹㫆㫃
㪚㫆㫅㪻㫀㫋㫀㫆㫅㫊
㪙㪭㪻㫊㫊 㪠㪻㪔㪉㪌㪇㱘㪘㪃㩷㪭㪾㫊㪔㪇㪭
㪭㪻㫊㪔㪉㪋㪭㪃㩷㪭㪾㫊㪔㪇㪭
㪠㪻㫊㫊
㪭㪻㫊㪔㪉㪇㪭㪃㩷㪭㪾㫊㪔㪇㪭㪃㩷㪫㫁㪔㪌㪌㷄
㪠㪾㫊㫊 㪭㪻㫊㪔㪇㪭㪃㩷㪭㪾㫊㪔㫧㪉㪇㪭
㪭㪾㫊㩿㫋㪿㪀 㪭㪻㫊㪔㪭㪾㫊㪃㩷㪠㪻㪔㪉㪌㪇㱘㪘
㪠㪻㩿㫆㫅㪀 㪭㪾㫊㪔㪈㪇㪭㪃㩷㪭㪻㫊㪔㪌㪭
㪭㪾㫊㪔㪈㪇㪭㪃㩷㪠㪻㪔㪊㪅㪌㪘
㪩㪻㫊㩿㫆㫅㪀
㪭㪾㫊㪔㪋㪅㪌㪭㪃㩷㪠㪻㪔㪉㪘
㪞㪽㫊 㪭㪻㫊㪔㪌㪭㪃㩷㪠㪻㪔㪉㪅㪌㪘
㪭㫊㪻 㪠㪽㪔㪇㪅㪏㪘㪃㩷㪭㪾㫊㪔㪇㪭
㪤㫀㫅㪅
㪫㫐㫇㪅
㪊㪇
㪈㪅㪇
㪏
㪈㪅㪌
㪌㪌
㪎㪌
㪋㪅㪌
㪚㫀㫊㫊
㪚㫆㫊㫊 㪭㪾㫊㪔㪇㪭㪃㩷㪭㪻㫊㪔㪈㪌㪭㪃㩷㪽㪔㪈㪤㪟㫑
㪚㫉㫊㫊
㪉㪇㪇
㪋㪇
㪉㪇
㪨㪾
㪨㪾㫊
㪨㪾㪻
㫋㪻㩿㫆㫅㪀
㫋㫉
㫋㪻㩿㫆㪽㪽㪀
㫋㪽
㫋㫉㫉
㪍㪅㪌
㪈㪅㪉
㪈㪅㪍
㪎
㪈㪉
㪈㪉
㪎
㪋㪇
㪭㪾㫊㪔㪈㪇㪭㪃㩷㪭㪻㫊㪔㪈㪌㪭㪃㩷㪠㪻㪔㪉㪅㪌㪘
㪭㪾㫊㪔㪈㪇㪭㪃㩷㪭㪻㫊㪔㪈㪌㪭㪃㩷㪠㪻 㻀 㪈㪘
㪩㫃㪔㪈㪌㱅㪃㩷㪩㪾㪼㫅㪔㪍㱅
㪠㪽㪔㪇㪅㪏㪘㪃㩷㪻㫃㪆㪻㫋㪔㪈㪇㪇㪘㪆㱘㫊
㪈㪅 㪧㫌㫃㫊㪼㩷㫋㪼㫊㫋㩷㪑㩷㪧㫌㫃㫊㪼㩷㫎㫀㪻㫋㪿㩷㻟㩷㪊㪇㪇㱘㫊㪼㪺㪃㩷㪻㫌㫋㫐㩷㪺㫐㪺㫃㪼㩷㻟㩷㪉䋦㪅
㪉㪅 㪠㫅㪻㪼㫇㪼㫅㪻㪼㫅㫋㩷㫆㪽㩷㫆㫇㪼㫉㪸㫋㫀㫅㪾㩷㫋㪼㫄㫇㪼㫉㪸㫋㫌㫉㪼㪅
㪊㪅 㪧㫌㫃㫊㪼㩷㫎㫀㪻㫋㪿㩷㫃㫀㫄㫀㫋㪼㪻㩷㪹㫐㩷㫄㪸㫏㫀㫄㫌㫄㩷㫁㫌㫅㪺㫋㫀㫆㫅㩷㫋㪼㫄㫇㪼㫉㪸㫋㫌㫉㪼㪅
㪎㪄 㪉
㪫㪸㪔㪉㪌㷄
㪤㪸㫏㪅 㪬㫅㫀㫋 㪥㫆㫋㪼
㪭
㪈
㱘㪘
㪈㪇
㫧㪈㪇㪇 㫅㪘
㪉㪅㪌
㪭
㪘
㪍㪏
㫄㱅
㪐㪏
㪪
㪈㪅㪉
㪭
㪈
㪈
㪈
㪈
㫇㪝
㫇㪝
㫇㪝
㪏㪅㪌
㪈㪈
㪈㪏
㪈㪏
㪈㪈
㪏㪇
㫅㪚
㫅㪚
㫅㪚
㫅㫊
㫅㫊
㫅㫊
㫅㫊
㫅㫊
㪉
㪉
㪉
㪉
㪉
㪉
㪉
㪚㫆㫄㫇㫃㪼㫄㪼㫅㫋㪸㫉㫐㩷㪤㪦㪪㪝㪜㪫㩷
㪜㪣㪤㪊㪍㪍㪇㪇㪜㪘㪄㪪
䂓㪫㫐㫇㫀㪺㪸㫃㩷㪜㫃㪼㪺㫋㫉㫀㪺㪸㫃㩷㪸㫅㪻㩷㪫㪿㪼㫉㫄㪸㫃㩷㪚㪿㪸㫉㪸㪺㫋㪼㫉㫀㫊㫋㫀㪺㫊㩷㩿㪥㪄㪺㪿㪀
On-Resistance Variation with
Drain Current and Gate Voltage.
On-Region Characteristics.
6.0V
2
4.5V
8
4.0V
6
1.8
4
3.5V
2
4.5V
1.4
5.0V
1.2
0
1
6.0V
7.0V
1
3.0V
0
VGS= 4.0V
1.6
DS(ON)
ID, Drain-source current(A)
VGS= 10V
R
, Noemalized
Drain-source on-resistance
10
10V
0.8
2
3
0
4
2
VDS, Drain-Source Voltage(V)
4
6
8
10
ID, Drain Current(A)
On-Resistance Variation with Gate-to-Source Voltage.
RDS(ON), On-resistance(OHM)
DS(ON)
R
, Normalized
Drain-source on-resistance
On-Resistance Variation with Temperature.
1.6
ID= 3.5A
VGS= 10V
1.4
1.2
1
0.8
0.6
-50
0.275
ID=2A
0.225
0.175
0.125
TA= 125°C
TA= 25°C
0.075
0.025
-25
0
25
75
50
100
125
4
2
150
TJ, Junction Temperature(°C)
Is, Reverse Drain Current (A)
10
VDS= 5V
ID, Drain Current(A)
125°C
TA= -55°C
25°C
6
4
2
0
1
2
3
4
8
10
Body Diode Forword Voltage Variation with
Source Current and Temperature.
Transfer Characteristics.
8
6
VGS, Gate to Source Voltage(V)
5
10
VGS= 0V
1
TA= 125°C
25°C
0.01
0.001
0.0001
0
6
-55°C
0.1
0.2
0.4
0.6
0.8
1
1.2
VSD, Body Diode Forword Voltage(V)
VGS, Gate to Source Voltage(V)
㪎㪄 㪊
1.4
㪚㫆㫄㫇㫃㪼㫄㪼㫅㫋㪸㫉㫐㩷㪤㪦㪪㪝㪜㪫㩷
㪜㪣㪤㪊㪍㪍㪇㪇㪜㪘㪄㪪
Capacitance Characteristics
Gate-Charge Characteristics
400
10
ID = 3.5A
15V
VDS= 5V
Capacitance(pF)
8
VGS (Voltage)
10V
6
4
300
Ciss
200
Coss
100
2
Crss
0
0
0
1
2
3
4
5
6
0
7
5
Qg (nC)
20
25
30
5
30
100
us
10
S (O
RD
3
T
IMI
N)L
4
1m
s
Power(W)
ID, Drain Current(A)
15
Single Pulse Maximum Power Dissipation.
Maximum Safe Operating Area.
10m
s
1
100
ms
0.3
1s
DC
VGS= 10V
SINGLE PULSE
RӰJA=150°C/W
TA=25°C
0.1
0.03
0.01
10
VDS,Drain to Source Voltage(V)
0.1
0.3
1
3
2
1
3
10
30
50
VDS, Drain-Source Voltage(V)
0
0.01
VGS= 10V
SINGLE PULSE
RӰJA=150°C/W
TA=25°C
0.1
1
10
Single pulse time(SEC)
㪎㪄 㪋
100
300
㪚㫆㫄㫇㫃㪼㫄㪼㫅㫋㪸㫉㫐㩷㪤㪦㪪㪝㪜㪫㩷
㪜㪣㪤㪊㪍㪍㪇㪇㪜㪘㪄㪪
䂓㪜㫃㪼㪺㫋㫉㫀㪺㪸㫃㩷㪚㪿㪸㫉㪸㪺㫋㪼㫉㫀㫊㫋㫀㪺㫊㩷㩿㪧㪄㪺㪿㪀
㪧㪸㫉㪸㫄㪼㫋㪼㫉
㪪㪫㪘㪫㪠㪚㩷㪧㪘㪩㪘㪤㪜㪫㪜㪩㪪
㪛㫉㪸㫀㫅㪄㫊㫆㫌㫉㪺㪼㩷㪹㫉㪼㪸㫂㪻㫆㫎㫅㩷㫍㫆㫃㫋㪸㪾㪼
㪱㪼㫉㫆㩷㪾㪸㫋㪼㩷㫍㫆㫃㫋㪸㪾㪼㩷㪻㫉㪸㫀㫅㩷㪺㫌㫉㫉㪼㫅㫋
㪞㪸㫋㪼㪄㪹㫆㪻㫐㩷㫃㪼㪸㫂㪸㪾㪼㩷㪺㫌㫉㫉㪼㫅㫋
㪞㪸㫋㪼㩷㫋㪿㫉㪼㫊㪿㫆㫃㪻㩷㫍㫆㫃㫋㪸㪾㪼
㪦㫅㩷㫊㫋㪸㫋㪼㩷㪻㫉㪸㫀㫅㩷㪺㫌㫉㫉㪼㫅㫋
㪪㫋㪸㫋㫀㪺㩷㪻㫉㪸㫀㫅㪄㫊㫆㫌㫉㪺㪼㩷㫆㫅㪄㫉㪼㫊㫀㫊㫋㪸㫅㪺㪼
㪝㫆㫉㫎㪸㫉㪻㩷㫋㫉㪸㫅㫊㪺㫆㫅㪻㫌㪺㫋㪸㫅㪺㪼
㪛㫀㫆㪻㪼㩷㪽㫆㫉㫎㪸㫉㪻㩷㫍㫆㫃㫋㪸㪾㪼
㪛㪰㪥㪘㪤㪠㪚㩷㪧㪘㪩㪘㪤㪜㪫㪜㪩㪪
㪠㫅㫇㫌㫋㩷㪺㪸㫇㪸㪺㫀㫋㪸㫅㪺㪼
㪦㫌㫋㫇㫌㫋㩷㪺㪸㫇㪸㪺㫀㫋㪸㫅㪺㪼
㪩㪼㫍㪼㫉㫊㪼㩷㫋㫉㪸㫅㫊㪽㪼㫉㩷㪺㪸㫇㪸㪺㫀㫋㪸㫅㪺㪼
㪪㪮㪠㪫㪚㪟㪠㪥㪞㩷㪧㪘㪩㪘㪤㪜㪫㪜㪩㪪
㪫㫆㫋㪸㫃㩷㪾㪸㫋㪼㩷㪺㪿㪸㫉㪾㪼㩷
㪞㪸㫋㪼㪄㫊㫆㫌㫉㪺㪼㩷㪺㪿㪸㫉㪾㪼
㪞㪸㫋㪼㪄㪻㫉㪸㫀㫅㩷㪺㪿㪸㫉㪾㪼
㪫㫌㫉㫅㪄㫆㫅㩷㪻㪼㫃㪸㫐㩷㫋㫀㫄㪼
㪫㫌㫉㫅㪄㫆㫅㩷㫉㫀㫊㪼㩷㫋㫀㫄㪼
㪫㫌㫉㫅㪄㫆㪽㪽㩷㪻㪼㫃㪸㫐㩷㫋㫀㫄㪼
㪫㫌㫉㫅㪄㫆㪽㪽㩷㪽㪸㫃㫃㩷㫋㫀㫄㪼
㪙㫆㪻㫐㪄㪻㫀㫆㪻㪼㩷㫉㪼㫍㪼㫉㫊㪼㩷㫉㪼㪺㫆㫍㪼㫉㫐㩷㫋㫀㫄㪼
㪥㪦㪫㪜㩷㪑
㪪㫐㫄㪹㫆㫃
㪚㫆㫅㪻㫀㫋㫀㫆㫅㫊
㪤㫀㫅㪅
㪙㪭㪻㫊㫊 㪠㪻㪔㪄㪉㪌㪇㱘㪘㪃㩷㪭㪾㫊㪔㪇㪭
㪄㪊㪇
㪭㪻㫊㪔㪄㪉㪋㪭㪃㩷㪭㪾㫊㪔㪇㪭
㪠㪻㫊㫊
㪭㪻㫊㪔㪄㪉㪇㪭㪃㩷㪭㪾㫊㪔㪇㪭㪃㩷㪫㫁㪔㪌㪌㷄
㪠㪾㫊㫊 㪭㪻㫊㪔㪇㪭㪃㩷㪭㪾㫊㪔㫧㪉㪇㪭
㪭㪾㫊㩿㫋㪿㪀 㪭㪻㫊㪔㪭㪾㫊㪃㩷㪠㪻㪔㪄㪉㪌㪇㱘㪘
㪄㪈㪅㪇
㪠㪻㩿㫆㫅㪀 㪭㪾㫊㪔㪄㪈㪇㪭㪃㩷㪭㪻㫊㪔㪄㪌㪭
㪄㪏
㪭㪾㫊㪔㪄㪈㪇㪭㪃㩷㪠㪻㪔㪄㪉㪅㪊㪘
㪩㪻㫊㩿㫆㫅㪀
㪭㪾㫊㪔㪄㪋㪅㪌㪭㪃㩷㪠㪻㪔㪄㪈㪅㪌㪘
㪞㪽㫊 㪭㪻㫊㪔㪄㪌㪭㪃㩷㪠㪻㪔㪄㪉㪘
㪭㫊㪻 㪠㪽㪔㪄㪇㪅㪏㪘㪃㩷㪭㪾㫊㪔㪇㪭
㪫㫐㫇㪅
㪭
㪄㪈
㱘㪘
㪄㪈㪇
㫧㪈㪇㪇 㫅㪘
㪄㪈㪅㪌 㪄㪉㪅㪌
㪭
㪘
㪈㪈㪌
㪈㪋㪌
㫄㱅
㪈㪏㪌 㪉㪋㪌
㪊
㪪
㪄㪈㪅㪉
㪭
㪚㫀㫊㫊
㪚㫆㫊㫊 㪭㪾㫊㪔㪇㪭㪃㩷㪭㪻㫊㪔㪄㪈㪌㪭㪃㩷㪽㪔㪈㪤㪟㫑
㪚㫉㫊㫊
㪈㪐㪇
㪍㪇
㪊㪇
㪨㪾
㪨㪾㫊
㪨㪾㪻
㫋㪻㩿㫆㫅㪀
㫋㫉
㫋㪻㩿㫆㪽㪽㪀
㫋㪽
㫋㫉㫉
㪋㪅㪌
㪈㪅㪉
㪇㪅㪐
㪏
㪈㪈
㪈㪋
㪏
㪋㪇
㪭㪾㫊㪔㪄㪈㪇㪭㪃㩷㪭㪻㫊㪔㪄㪈㪌㪭㩷
㪠㪻㪔㪄㪉㪘
㪭㪾㫊㪔㪄㪈㪇㪭㪃㩷㪭㪻㫊㪔㪄㪈㪌㪭㩷
㪠㪻 㻀 㪄㪈㪘㪃㩷㪩㫃㪔㪈㪌㱅
㪩㪾㪼㫅㪔㪍㱅
㪠㪽㪔㪄㪇㪅㪏㪘㪃㩷㪻㫃㪆㪻㫋㪔㪈㪇㪇㪘㪆㱘㫊
㪈㪅 㪧㫌㫃㫊㪼㩷㫋㪼㫊㫋㩷㪑㩷㪧㫌㫃㫊㪼㩷㫎㫀㪻㫋㪿㩷㻟㩷㪊㪇㪇㱘㫊㪼㪺㪃㩷㪻㫌㫋㫐㩷㪺㫐㪺㫃㪼㩷㻟㩷㪉䋦㪅
㪉㪅 㪠㫅㪻㪼㫇㪼㫅㪻㪼㫅㫋㩷㫆㪽㩷㫆㫇㪼㫉㪸㫋㫀㫅㪾㩷㫋㪼㫄㫇㪼㫉㪸㫋㫌㫉㪼㪅
㪊㪅 㪧㫌㫃㫊㪼㩷㫎㫀㪻㫋㪿㩷㫃㫀㫄㫀㫋㪼㪻㩷㪹㫐㩷㫄㪸㫏㫀㫄㫌㫄㩷㫁㫌㫅㪺㫋㫀㫆㫅㩷㫋㪼㫄㫇㪼㫉㪸㫋㫌㫉㪼㪅
㪎㪄 㪌
㪫㪸㪔㪉㪌㷄
㪤㪸㫏㪅 㪬㫅㫀㫋 㪥㫆㫋㪼
㪈
㪈
㪈
㪈
㫇㪝
㫇㪝
㫇㪝
㪍㪅㪇
㪈㪉
㪈㪏
㪉㪈
㪈㪉
㪏㪇
㫅㪚
㫅㪚
㫅㪚
㫅㫊
㫅㫊
㫅㫊
㫅㫊
㫅㫊
㪉
㪉
㪉
㪉
㪉
㪉
㪉
㪚㫆㫄㫇㫃㪼㫄㪼㫅㫋㪸㫉㫐㩷㪤㪦㪪㪝㪜㪫㩷
㪜㪣㪤㪊㪍㪍㪇㪇㪜㪘㪄㪪
䂓㪫㫐㫇㫀㪺㪸㫃㩷㪜㫃㪼㪺㫋㫉㫀㪺㪸㫃㩷㪸㫅㪻㩷㪫㪿㪼㫉㫄㪸㫃㩷㪚㪿㪸㫉㪸㪺㫋㪼㫉㫀㫊㫋㫀㪺㫊㩷㩿㪧㪄㪺㪿㪀
On-Resistance Variation with
Drain Current and Gate Voltage.
On-Region Characteristics
3
ID,Drain Current(A)
VGS= -10V
- 6.0V
8
RDS(ON),Normalized
Drain-Source On-Resistance
10
- 4.5V
2.5
- 4.0V
6
VGS=-3.5V
- 3.5V
4
- 4.0V
2
- 4.5V
- 5.0V
1.5
2
0
- 6.0V
-10.0V
1
0.5
0
1
2
3
4
0
5
2
4
RDS(ON),On-Resistance(OHM)
RDS(ON),Normalized
Drain-Source On-Resistance
10
0.4
ID= -2.3A
VGS= -10V
1.4
1.2
1
0.8
0.6
ID = -1.5A
0.3
TA=125°C
0.2
TA=25°C
0.1
0
-50
-25
0
25
50
75
100
125
150
4
2
6
10
Body Diode Forward Voltage Variation
With Source Current and Temperature.
Transfer Characteristics
10
VDS= - 5V
-IS,Reverse Drain Current(A)
5
25°C
TA= - 55°C
4
125°C
3
2
1
0
1.5
5
- VGS,Gate To Source Voltage(V)
TJ,Junction Temperature(°C)
-ID,Drain Current(A)
8
On-Resistance Variation with
Gate-to-Source Voltage.
On-Resistance Variation
with Temperature
1.6
6
- ID,Drain Current(A)
- VDS,Drain-Source Voltage(V)
VGS=0V
1
TA=125°C
0.1
25°C
0.01
- 55°C
0.001
0.0001
2.5
3.5
4.5
0
-VGS,Gate To Source Voltage(V)
0.2
0.4
0.6
0.8
1
-VSD,Body Diode Forward Voltage(V)
㪎㪄 㪍
1.2
1.4
㪚㫆㫄㫇㫃㪼㫄㪼㫅㫋㪸㫉㫐㩷㪤㪦㪪㪝㪜㪫㩷
㪜㪣㪤㪊㪍㪍㪇㪇㪜㪘㪄㪪
Gate-Charge Characteristics
Capacitance Characteristics
400
10
ID = -2.0A
V DS= -5V
-10V
Capacitance(pF)
VGS (Voltage)
8
-15V
6
4
300
Ciss
200
100
2
Coss
0
Crss
0
0
1
2
5
4
3
6
0
5
10
Q g (nC)
25
30
5
30
100
us
10
S (O
RD
3
T
IMI
N)L
4
1m
s
Power(W)
ID, Drain Current(A)
20
Single Pulse Maximum Power Dissipation.
Maximum Safe Operating Area.
10m
s
1
100
ms
0.3
1s
DC
VGS= 10V
SINGLE PULSE
RӰJA=150°C/W
TA=25°C
0.1
0.03
0.01
15
VDS,Drain to Source Voltage(V)
0.1
0.3
1
3
2
1
3
10
30
VGS= 10V
SINGLE PULSE
RӰJA=150°C/W
TA=25°C
0
0.01
50
0.1
1
VDS, Drain-Source Voltage(V)
10
100
300
Single pulse time(SEC)
D=0.5
0.5
P(pk)
r(t), Normalized Effective
Transient Thermal Resistance
Transient Thermal Response Curve.
1
0.2
0.2
0.1
0.1
t2
0.05
0.05
0.02
RӰJA(t) = r(t) * RӰ˝˔
RӰJA=150°C/W
TJ-TA=P*RӰJA(t)
Duty Cycle, D= t1/ t2
0.02
0.01
Single Pulse
0.01
0.0001
t1
0.001
0.01
0.1
t1 Time(Sec)
㪎㪄 㪎
1
10
100
300
Similar pages