PD - 94694
IRFBE30S
IRFBE30L
O
O
O
O
O
HEXFET® Power MOSFET
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Fast Switching
Ease of Paralleling
Simple Drive Requirements
D
VDSS = 800V
RDS(on) = 3.0Ω
G
ID = 4.1A
S
Description
Third Generation HEXFETs from International
Rectifier provide the designer with the best
combination of fast switching, ruggedized device
design, low on-resistance and cost-effectiveness.
D2Pak
IRFBE30S
TO-262
IRFBE30L
Absolute Maximum Ratings
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
Parameter
4.1
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
2.6
IDM
Pulsed Drain Current
PD @TC = 25°C
Maximum Power Dissipation
125
W
VGS
Linear Derating Factor
Gate-to-Source Voltage
1.0
± 20
W/°C
V
260
mJ
EAS
IAR
EAR
dv/dt
TJ
TSTG
c
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
c
16
d
c
Peak Diode Recovery dv/dt e
Repetitive Avalanche Energy
Operating Junction and
4.1
A
13
mJ
2.0
-55 to + 150
V/ns
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Parameter
RθJC
RθCS
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
RθJA
Junction-to-Ambient
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Min.
Typ.
Max.
Units
–––
–––
1.0
°C/W
–––
0.50
–––
–––
–––
62
1
06/11/03
IRFBE30S/IRFBE30L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
∆ΒVDSS/∆TJ
RDS(on)
VGS(th)
Min. Typ. Max. Units
Conditions
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LD
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
800
–––
–––
2.0
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
0.90
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
12
33
82
30
4.5
–––
–––
3.0
4.0
–––
100
500
100
-100
78
9.6
45
–––
–––
–––
–––
–––
LS
Internal Source Inductance
–––
7.5
–––
6mm (0.25in.)
from package
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1300
310
190
–––
–––
–––
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
gfs
IDSS
IGSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
Ω VGS = 10V, ID = 2.5A
V VDS = VGS, ID = 250µA
S VDS = 100V, ID = 2.5A
µA VDS = 800V, VGS = 0V
VDS = 640V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
nC ID = 4.1A
VDS = 400V
VGS = 10V, See Fig. 6 & 13
VDD = 400V
ns ID = 4.1A
RG = 12Ω
RD = 95Ω, See Fig. 10
D
nH Between lead,
f
f
f
pF
G
S
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
–––
–––
4.1
ISM
(Body Diode)
Pulsed Source Current
–––
–––
16
showing the
integral reverse
VSD
trr
Qrr
ton
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
1.8
720
2.7
p-n junction diode.
TJ = 25°C, IS = 4.1A, VGS = 0V
TJ = 25°C, IF = 4.1A
di/dt = 100A/µs
c
MOSFET symbol
A
–––
–––
–––
–––
480
1.8
V
ns
nC
D
G
f
S
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
VDD=50V, starting TJ = 25°C, L=29mH, RG=25Ω,
I AS = 4.1A. (See Figure 12).
ISD ≤ 4.1A, di/dt ≤ 100A/µs, VDD ≤ 600,
TJ ≤ 150°C.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRFBE30S/IRFBE30L
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3
IRFBE30S/IRFBE30L
4
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IRFBE30S/IRFBE30L
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5
IRFBE30S/IRFBE30L
6
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