IPA50R380CE MOSFET 500VCoolMOSªCEPowerTransistor PG-TO220FP CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.CoolMOS™CEisa price-performanceoptimizedplatformenablingtotargetcostsensitive applicationsinConsumerandLightingmarketsbystillmeetinghighest efficiencystandards.Thenewseriesprovidesallbenefitsofafast switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. Features •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Veryhighcommutationruggedness •Easytouse/drive •Pb-freeplating,Halogenfreemoldcompound •Qualifiedforstandardgradeapplications Drain Pin 2 Gate Pin 1 Applications Source Pin 3 PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting. Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 550 V RDS(on),max 0.38 Ω ID 14.1 A Qg,typ 24.8 nC ID,pulse 32.4 A Eoss @ 400V 2.54 µJ Type/OrderingCode Package Marking IPA50R380CE PG-TO 220 FullPAK 5R380CE Final Data Sheet 1 RelatedLinks see Appendix A Rev.2.4,2016-07-12 500VCoolMOSªCEPowerTransistor IPA50R380CE TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.4,2016-07-12 500VCoolMOSªCEPowerTransistor IPA50R380CE 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 14.1 8.9 A TC = 25°C TC = 100°C - 32.4 A TC=25°C - - 173 mJ ID =4A; VDD = 50V EAR - - 0.26 mJ ID =4A; VDD = 50V Avalanche current, repetitive IAR - - 4.0 A - MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...400V Gate source voltage VGS -20 -30 - 20 30 V static; AC (f>1 Hz) Power disspiation (FullPAK) Ptot - - 29.2 W TC=25°C Operating and storage temperature Tj,Tstg -40 - 150 °C - Mounting torque - - - 50 Ncm M2.5 screws IS - - 5.4 A TC=25°C IS,pulse - - 32.4 A TC = 25°C dv/dt - - 15 V/ns VDS=0...400V,ISD<=IS,Tj=25°C dif/dt - - 500 A/µs VDS=0...400V,ISD<=IS,Tj=25°C - - 2500 V Vrms,TC=25°C,t=1min Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current2) ID,pulse - Avalanche energy, single pulse EAS Avalanche energy, repetitive Continuous diode forward current 2) Diode pulse current 3) Reverse diode dv/dt 3) Maximum diode commutation speed Insulation withstand voltage for TO-220 VISO FullPAK 2Thermalcharacteristics Table3ThermalcharacteristicsTO220FullPAK Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 4.28 °C/W - Thermal resistance, junction - ambient RthJA - - 80 °C/W leaded Soldering temperature, wavesoldering only allowed at leads - - 260 °C Tsold 1.6mm (0.063 in.) from case for 10s 1) Limited by Tj max <150°C, Maximum Duty Cycle D = 0.5, TO220 equivalent Pulse width tp limited by Tj,max 3) VDClink=400V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 2) Final Data Sheet 3 Rev.2.4,2016-07-12 500VCoolMOSªCEPowerTransistor IPA50R380CE 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3 3.50 V VDS=VGS,ID=0.26mA - 10 1 - µA VDS=500V,VGS=0V,Tj=25°C VDS=500V,VGS=0V,Tj=150°C IGSS - - 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 0.34 0.89 0.38 - Ω VGS=13V,ID=3.2A,Tj=25°C VGS=13V,ID=3.2A,Tj=150°C Gate resistance RG - 3 - Ω f=1MHz,opendrain Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 500 - Gate threshold voltage V(GS)th 2.50 Zero gate voltage drain current IDSS Gate-source leakage curent Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 584 - pF VGS=0V,VDS=100V,f=1MHz Output capacitance Coss - 40 - pF VGS=0V,VDS=100V,f=1MHz Effective output capacitance, energy related1) Co(er) - 32 - pF VGS=0V,VDS=0...400V Effective output capacitance, time related2) Co(tr) - 133 - pF ID=constant,VGS=0V,VDS=0...400V Turn-on delay time td(on) - 7.2 - ns VDD=400V,VGS=13V,ID=3.9A, RG=3.4Ω Rise time tr - 5.6 - ns VDD=400V,VGS=13V,ID=3.9A, RG=3.4Ω Turn-off delay time td(off) - 35 - ns VDD=400V,VGS=13V,ID=3.9A, RG=3.4Ω Fall time tf - 8.6 - ns VDD=400V,VGS=13V,ID=3.9A, RG=3.4Ω Unit Note/TestCondition Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 3.1 - nC VDD=400V,ID=3.9A,VGS=0to10V Gate to drain charge Qgd - 13.1 - nC VDD=400V,ID=3.9A,VGS=0to10V Gate charge total Qg - 24.8 - nC VDD=400V,ID=3.9A,VGS=0to10V Gate plateau voltage Vplateau - 5.3 - V VDD=400V,ID=3.9A,VGS=0to10V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V 2) Final Data Sheet 4 Rev.2.4,2016-07-12 500VCoolMOSªCEPowerTransistor IPA50R380CE Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage Values Unit Note/TestCondition - V VGS=0V,IF=3.9A,Tj=25°C 207 - ns VR=400V,IF=3.9A,diF/dt=100A/µs - 1.7 - µC VR=400V,IF=3.9A,diF/dt=100A/µs - 15.5 - A VR=400V,IF=3.9A,diF/dt=100A/µs Min. Typ. Max. VSD - 0.85 Reverse recovery time trr - Reverse recovery charge Qrr Peak reverse recovery current Irrm Final Data Sheet 5 Rev.2.4,2016-07-12 500VCoolMOSªCEPowerTransistor IPA50R380CE 4Electricalcharacteristicsdiagrams Powerdissipation(FullPAK) Max.transientthermalimpedance(FullPAK) 101 40 0.5 30 100 0.2 ZthJC[K/W] Ptot[W] 0.1 20 0.05 0.02 10-1 10 0.01 single pulse 0 0 40 80 120 10-2 160 10-5 10-4 10-3 TC[°C] 10-2 10-1 100 tp[s] Ptot=f(TC) ZthJC=f(tP);parameter:D=tp/T Safeoperatingarea(FullPAK)Tj=25°C Safeoperatingarea(FullPAK)Tj=80°C 2 102 10 1 µs 1 1 µs 101 10 10 µs 10 µs ID[A] ID[A] 100 µs 0 10 1 ms 100 µs 100 1 ms 10 ms 10 ms 10-1 10-1 DC DC 10-2 100 101 102 103 10-2 100 101 102 VDS[V] VDS[V] ID=f(VDS);TC=25°C;D=0;parameter:tp ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 6 103 Rev.2.4,2016-07-12 500VCoolMOSªCEPowerTransistor IPA50R380CE Typ.outputcharacteristicsTj=25°C Typ.outputcharacteristicsTj=125°C 40 25 35 20 V 30 10 V 20 V 10 V 20 25 15 7V ID[A] ID[A] 8V 8V 20 7V 10 15 10 6V 5.5 V 6V 5 5.5 V 5 5V 4.5 V 5V 4.5 V 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Typ.drain-sourceon-stateresistance Drain-sourceon-stateresistance 1.4 1.2 1.0 1.2 5.5 V 7V 0.8 6V 98% RDS(on)[Ω] RDS(on)[Ω] 5V 6.5 V 1.0 0.6 typ 0.4 10 V 0.8 0.2 0.6 0 5 10 15 20 0.0 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=3.2A;VGS=13V 7 Rev.2.4,2016-07-12 500VCoolMOSªCEPowerTransistor IPA50R380CE Typ.transfercharacteristics Typ.gatecharge 35 10 25 °C 9 30 8 25 120 V 7 400 V 6 VGS[V] ID[A] 20 150 °C 15 5 4 3 10 2 5 1 0 0 2 4 6 8 0 10 0 10 20 VGS[V] 30 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=3.9Apulsed;parameter:VDD Avalancheenergy Drain-sourcebreakdownvoltage 200 580 180 560 160 540 140 VBR(DSS)[V] EAS[mJ] 120 100 80 60 520 500 480 40 460 20 0 0 25 50 75 100 125 150 175 440 -50 -25 0 Tj[°C] 50 75 100 125 150 Tj[°C] EAS=f(Tj);ID=4A;VDD=50V Final Data Sheet 25 VBR(DSS)=f(Tj);ID=1mA 8 Rev.2.4,2016-07-12 500VCoolMOSªCEPowerTransistor IPA50R380CE Typ.capacitances Typ.Cossstoredenergy 4 10 4.0 3.5 103 3.0 Ciss Eoss[µJ] C[pF] 2.5 102 Coss 2.0 1.5 101 1.0 Crss 0.5 100 0 100 200 300 400 500 0.0 0 VDS[V] 100 200 300 400 500 VDS[V] C=f(VDS);VGS=0V;f=1MHz Eoss=f(VDS) Forwardcharacteristicsofreversediode 102 101 IF[A] 125 °C 25 °C 100 10-1 0.4 0.6 0.8 1.0 1.2 1.4 VSD[V] IF=f(VSD);parameter:Tj Final Data Sheet 9 Rev.2.4,2016-07-12 500VCoolMOSªCEPowerTransistor IPA50R380CE 5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt IF QF IF dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 t 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) ton tr td(off) tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VDS VDS Final Data Sheet 10 ID VDS Rev.2.4,2016-07-12 500VCoolMOSªCEPowerTransistor IPA50R380CE 6PackageOutlines DIMENSIONS DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. DIM A A1 A2 b b1 b2 b3 b4 c D D1 E e e1 N H L L1 Q MILLIMETERS MIN MAX 4.50 4.90 2.34 2.80 2.42 2.86 0.65 0.90 0.95 1.38 1.20 1.50 0.65 1.38 1.20 1.50 0.40 0.63 15.67 16.15 8.97 9.83 10.00 10.65 2.54 (BSC) INCHES MIN 0.177 0.092 0.095 0.026 0.037 0.047 0.026 0.047 0.016 0.617 0.353 0.394 DOCUMENT NO. Z8B00181328 SCALE 0 2.5 0 2.5 5mm EUROPEAN PROJECTION 0.100 (BSC) 5.08 3 28.70 12.78 2.83 3.00 3.15 MAX 0.193 0.110 0.113 0.035 0.054 0.059 0.054 0.059 0.025 0.636 0.387 0.419 0.200 3 29.75 13.75 3.45 3.38 3.50 1.130 0.503 0.111 0.118 0.124 1.171 0.541 0.136 0.133 0.138 ISSUE DATE 29-04-2016 REVISION 01 Figure1OutlinePG-TO220FullPAK,dimensionsinmm/inches Final Data Sheet 11 Rev.2.4,2016-07-12 500VCoolMOSªCEPowerTransistor IPA50R380CE 7AppendixA Table11RelatedLinks • IFXCoolMOSWebpage:www.infineon.com • IFXDesigntools:www.infineon.com Final Data Sheet 12 Rev.2.4,2016-07-12 500VCoolMOSªCEPowerTransistor IPA50R380CE RevisionHistory IPA50R380CE Revision:2016-07-12,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2011-06-08 Release of final data sheet 2.1 2011-06-16 - 2.2 2014-06-12 Release of final datasheet 2.3 2016-06-13 Updated ID ratings, package marking code & package drawing 2.4 2016-07-12 Changed marking information in page 1 TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2016InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.4,2016-07-12