® MBRF1045CTR thru MBRF10200CTR Pb Free Plating Product Pb MBRF1045CTR/MBRF1060CTR/MBRF10100CTR/MBRF10200CTR 10.0 Amperes Insulated Dual Common Anode Schottky Half Bridge Rectifiers ITO-220AB Unit : inch (mm) .189(4.8) .165(4.2) .272(6.9) .248(6.3) .406(10.3) .381(9.7) .134(3.4) .118(3.0) .130(3.3) .114(2.9) Application Automotive Inverters and Solar Inverters Plating Power Supply,SMPS,EPS and UPS Car Audio Amplifiers and Sound Device Systems .161(4.1)MAX .071(1.8) .055(1.4) .055(1.4) .039(1.0) .035(0.9) .011(0.3) Mechanical Data Case: Fully Isolated Molding TO-220F Full Plastic Pak Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.0 gram approximately .1 .1 (2.55) (2.55) Case Case Negative Positive Common Cathode Common Anode Suffix "CT" Suffix "CTR" .543(13.8) .512(13.0) .606(15.4) .583(14.8) .112(2.85) .100(2.55) Features Standard MBR matured technology with high reliablity Low forward voltage drop High current capability Low reverse leakage current High surge current capability .114(2.9) .098(2.5) .032(.8) MAX Case Doubler Tandem Polarity Suffix "CTD" Case Series Tandem Polarity Suffix "CTS" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) SYMBOL MBRF1045CTR MBRF1060CTR MBRF10100CTR MBRF10200CTR UNIT PARAMETER Maximum repetitive peak reverse voltage VRRM 45 60 100 200 V Maximum RMS voltage VRMS 31 42 70 140 V Maximum DC blocking voltage VDC 45 60 100 200 V Maximum average forward rectified current IF(AV) 10 A Peak repetitive forward current (Rated VR, Square Wave, 20KHz) IFRM 10 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 120 A Peak repetitive reverse surge current (Note 1) IRRM Maximum instantaneous forward voltage (Note 2) IF= 5 A, TJ=25°C IF= 5 A, TJ=125°C IF= 10 A, TJ=25°C IF= 10 A, TJ=125°C Maximum reverse current @ rated VR TJ=25°C TJ=125°C VF IR 1 0.5 0.70 0.80 0.57 0.80 A 0.85 0.88 0.65 0.75 0.78 0.90 0.95 0.98 0.67 0.75 0.85 0.88 15 10 2 5 0.1 V mA Voltage rate of change (Rated VR) dV/dt 10000 V/μs Typical thermal resistance RθJC 3.5 °C/W TJ - 55 to +150 °C TSTG - 55 to +150 °C Operating junction temperature range Storage temperature range Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Rev.07C © 2006 Thinki Semiconductor Co., Ltd. Page 1/2 http://www.thinkisemi.com/ ® MBRF1045CTR thru MBRF10200CTR RATINGS AND CHARACTERISTICS CURVES (TA=25°C unless otherwise noted) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG.1 FORWARD CURRENT DERATING CURVE 10 8 6 4 Resistive or inductive load with heat sink 2 0 0 50 100 180 PEAK FORWARD SURGE CURRENT (A) AVERAGE FORWARD A CURRENT (A) 12 150 150 8.3ms single half sine wave 120 90 60 30 0 1 10 100 NUMBER OF CYCLES AT 60 Hz CASE TEMPERATURE (°C) FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100 1000 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) Pulse width=300μs 1% duty cycle 100 MBRF1060CTR 10 MBRF1045CTR MBRF10100CTR 1 MBRF10200CTR 0.1 0.2 0.4 0.6 0.8 1 1.2 10 TJ=125°C 1 TJ=75°C 0.1 0.01 TJ=25°C 0.001 0 1.4 FORWARD VOLTAGE (V) FIG. 5 TYPICAL JUNCTION CAPACITANCE 40 60 80 100 120 140 FIG. 6 TYPICAL TRANSIENT THERMAL CHARACTERISTICS PER LEG 10000 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (°C/W) JUNCTION CAPACITANCE (pF) A 20 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 1000 10 1 0.1 100 0.1 1 10 REVERSE VOLTAGE (V) Rev.07C © 2006 Thinki Semiconductor Co., Ltd. 100 0.01 0.1 1 10 100 T-PULSE DURATION. (s) Page 2/2 http://www.thinkisemi.com/