Transistors SMD Type NPN Transistors BC847T (KC847T) SOT-523 U n it: m m +0.1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 1 ● Ideally suited for automatic insertion 0.36±0.1 +0.15 1.6-0. 15 ■ Features 3 ● For Switching and AF Amplifier Applications 0.8±0.1 0.55 (REF.) 2 0.15±0.05 0.3±0.05 +0.1 0.5 -0.1 +0.1 -0.1 0.8 +0.05 0.75-0. 05 1. Base 2. Emitter 3. Collecter ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Collector - Base Voltage Parameter VCBO 50 Collector - Emitter Voltage VCEO 45 Emitter - Base Voltage Unit V VEBO 6 Collector Current - Continuous IC 0.1 A Collector Power Dissipation PC 150 mW TJ 150 Tstg -55 to 150 Junction Temperature Storage Temperature range ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 100 μA， IE=0 50 Collector- emitter breakdown voltage VCEO Ic= 10 mA， IB=0 45 Emitter - base breakdown voltage VEBO IE= 100μA， IC=0 6 Collector-base cut-off current ICBO VCB= 30 V , IE=0 Emitter cut-off current IEBO Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) Base-emitter voltage VBE(on) hFE BC847BT Noise figure BC847CT Collector output capacitance Transition frequency nA uA 0.1 IC=100 mA, IB=5mA 0.6 IC=10 mA, IB=0.5mA 0.7 IC=100 mA, IB=5mA 0.9 0.58 VCE= 5V, IC= 10mA VCE= 5V, IC= 2mA NF VCE=5V,f=1MHz,Ic=0.2mA Rs=2KΩ,BW=200HZ Cob VCB= 10V,f=1MHz fT 15 0.25 VCE= 5V, IC= 2mA VCE= 5 V, IC=10mA,f=100MHz Unit V VEB= 6V , IC=0 BC847CT BC847AT/BT Max IC=10 mA, IB=0.5mA BC847AT DC current gain Typ V 0.7 0.77 110 220 200 450 420 800 10 4 4.5 100 dB pF MHz ■ Classification of hfe Type BC847AT BC847BT BC847CT Range 110-220 200-450 420-800 Marking 1E 1F 1G www.kexin.com.cn 1 Transistors SMD Type NPN Transistors BC847T (KC847T) ■ Typical Characterisitics Static Characteristic 10 COLLECTOR CURRENT IC (mA) 8 h FE 3000 COMMON EMITTER Ta=25℃ 1000 DC CURRENT GAIN hFE 20uA 18uA 16uA 6 14uA 12uA 4 10uA 8uA —— IC COMMON EMITTER VCE= 5V Ta=100℃ Ta=25℃ 100 6uA 2 4uA 0 IB=2uA 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE V BEsat 1000 —— 6 10 7 1 V CEsat IC 500 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 800 Ta=25℃ 600 Ta=100 ℃ 400 1 10 COLLECTOR CURREMT IC 100 —— IC BE 1 V 10 fT 500 TRANSITION FREQUENCY fT (MHz) T =2 5℃ a T =1 00℃ a COLLECTOR CURRENT IC (mA) Ta=25℃ COLLECTOR CURREMT 1 IC Ta=100 ℃ (mA) COMMON EMITTER VCE=5V 10 —— 100 (mA) 100 10 0.1 100 IC β=20 β=20 200 0.1 10 COLLECTOR CURRENT VCE (V) IC 100 (mA) —— IC 100 COMMON EMITTER VCE=5V Ta=25℃ 0.1 200 400 600 10 0.25 800 2 BASE-EMMITER VOLTAGE VBE (mV) 100 C ob /Cib —— V CB /VEB COLLECTOR POWER DISSIPATION PC (mW) CAPACITANCE C (pF) Ta=25 ℃ Cib Cob 1 0.1 0.1 2 www.kexin.com.cn 10 V (V) 30 8 —— IC a (mA) 10 12 125 150 T 150 100 50 0 1 REVERSE VOLTAGE 6 PC 200 f=1MHz IE=0/IC=0 10 4 COLLECTOR CURRENT 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (℃)