PolarTM Power MOSFET IXTA08N120P IXTP08N120P VDSS ID25 RDS(on) = 1200V = 0.8A ≤ 25Ω Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1200 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 1200 V VGSS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 0.8 A IDM TC = 25°C, pulse width limited by TJM 1.8 A IA EAS TC = 25°C TC = 25°C 0.8 80 A mJ dV/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 50 W G = Gate S = Source -55 ... +150 150 -55 ... +150 °C °C °C Features TJ TJM Tstg TL 1.6mm (0.062) from case for 10s 300 °C TSOLD Plastic body for 10s 260 °C Md Mounting torque 1.13 / 10 Nm/lb.in. Weight TO-263 TO-220 2.50 3.00 g g (TO-220) G S (TAB) TO-220 (IXTP) G z z z (TAB) D S D = Drain TAB = Drain International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 1200 VGS(th) VDS = VGS, ID = 50μA 2.5 IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) TJ = 125°C VGS = 10V, ID = 0.5 • ID25, Note 1 © 2008 IXYS CORPORATION, All rights reserved Applications: V 4.5 20.5 V z z ±50 nA z 5 μA 100 μA z 25 Easy to mount Space savings High power density Ω z High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters DS99868A (04/08) IXTA08N120P IXTP08N120P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. gfs VDS= 30V, ID = 0.5 • ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz 0.63 S 333 20 4.7 pF pF pF Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 50Ω (External) 20 26 55 24 ns ns ns ns Qg(on) Qgs Qgd VGS= 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 14.0 2.0 8.2 nC nC nC RthJC RthCS (TO-220) 0.50 2.5 °C/W °C/W td(on) tr td(off) tf 0.38 TO-220 (IXTP) Outline Source-Drain Diode Pins: 1 - Gate 2 - Drain Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0V 0.8 A ISM Repetitive, pulse width limited by TJM 2.4 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 0.8A, -di/dt = 100A/μs, VR = 100V, VGS = 0V 900 ns 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 TO-263 (IXTA) Outline Note 1: Pulse test, t ≤ 300 μs; duty cycle, d ≤ 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTA08N120P IXTP08N120P Fig. 1. Extended Output Characteristics @ 25ºC Fig. 2. Output Characteristics @ 125ºC 0.8 1.2 VGS = 10V 7V 1.1 VGS = 10V 6V 0.7 1.0 0.6 0.8 ID - Amperes ID - Amperes 0.9 6V 0.7 0.6 0.5 0.5 0.4 0.3 0.4 5V 0.2 0.3 5V 0.2 0.1 0.1 0.0 0.0 0 3 6 9 12 15 18 21 24 27 30 33 0 5 10 15 Fig. 3. RDS(on) Normalized to ID = 0.4A Value vs. Junction Temperature 25 30 35 40 Fig. 4. RDS(on) Normalized to ID = 0.4A Value vs. Drain Current 3.0 2.6 VGS = 10V VGS = 10V 2.4 2.6 TJ = 125ºC 2.2 2.2 RDS(on) - Normalized RDS(on) - Normalized 20 VDS - Volts VDS - Volts I D = 0.8A 1.8 I D = 0.4A 1.4 1.0 2 1.8 1.6 1.4 1.2 0.6 TJ = 25ºC 1 0.2 0.8 -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 TJ - Degrees Centigrade 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 ID - Amperes Fig. 5. Maximum Drain Current vs. Case Temperature Fig. 6. Input Admittance 1.0 0.9 0.9 0.8 0.8 0.7 ID - Amperes ID - Amperes 0.7 0.6 0.5 0.4 0.3 0.6 TJ = 125ºC 25ºC - 40ºC 0.5 0.4 0.3 0.2 0.2 0.1 0.1 0 0.0 -50 -25 0 25 50 75 TC - Degrees Centigrade © 2008 IXYS CORPORATION, All rights reserved 100 125 150 3.0 3.5 4.0 4.5 5.0 VGS - Volts 5.5 6.0 6.5 IXTA08N120P IXTP08N120P Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 1.1 2.4 TJ = - 40ºC 1.0 2.2 2.0 0.9 1.8 25ºC 0.7 0.6 IS - Amperes g f s - Siemens 0.8 125ºC 0.5 0.4 1.6 1.4 1.2 1.0 TJ = 125ºC 0.8 0.3 0.6 0.2 0.4 0.1 TJ = 25ºC 0.2 0.0 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.4 0.5 0.6 ID - Amperes Fig. 9. Capacitance 0.8 0.9 Fig. 10. Gate Charge 10 1,000 VDS = 600V 9 I D = 0.4A 8 Ciss I G = 1mA 7 100 VGS - Volts Capacitance - PicoFarads 0.7 VSD - Volts Coss 10 6 5 4 3 2 Crss f = 1 MHz 1 0 1 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 QG - NanoCoulombs VDS - Volts Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - ºC / W 10.0 1.0 0.1 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: T_08N120P(1C) 4-02-08-A