MOTOROLA MJW16012 15 ampere npn silicon power transistors 450 volts 135 and 175 watt Datasheet

Order this document
by MJ16010/D
SEMICONDUCTOR TECHNICAL DATA
 ! These transistors are designed for high–voltage, high–speed, power switching in
inductive circuits where fall time is critical. They are particularly suited for
line–operated switchmode applications. The MJ16012 and MJW16012 are selected
high gain versions of the MJ16010 and MJW16010 for applications where drive
current is limited.
•
•
•
•
•
•
Switching Regulators
Inverters
Solenoids
Relay Drivers
Motor Controls
Deflection Circuits
• Fast Turn–Off Times — TC = 100°C
50 ns Inductive Fall Time (Typ)
90 ns Inductive Crossover Time (Typ)
800 ns Inductive Storage Time (Typ)
• 100_C Performance Specified for:
Reverse–Biased SOA with Inductive Loads
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
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*Motorola Preferred Device
15 AMPERE
NPN SILICON
POWER TRANSISTORS
450 VOLTS
135 AND 175 WATTS
MAXIMUM RATINGS
Rating
Symbol
MJ16010
MJ16012
MJW16010
MJW16012
Unit
Collector–Emitter Voltage
VCEO
450
Vdc
Collector–Emitter Voltage
VCEV
850
Vdc
Emitter–Base Voltage
VEB
6.0
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
15
20
Adc
Base Current — Continuous
— Peak (1)
IB
IBM
10
15
Adc
Total Device Dissipation
@ TC = 25_C
@ TC = 100_C
Derate above 25_C
PD
Operating and Storage Junction
Temperature Range
CASE 1–07
TO–204AA
(TO–3)
MJ16010
MJ16012
Watts
TJ, Tstg
1 75
100
1.0
135
53 8
1.11
W/_C
– 65 to 200
– 55 to 150
_C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction to Case
RθJC
Lead Temperature for Soldering
Purposes, 1/8″ from Case for
5 Seconds
(1) Pulse Test: Pulse Width
50 µs, Duty Cycle
TL
Max
1.0
Unit
0.93
275
_C/W
_C
CASE 340F–03
TO–247AE
MJW16010
MJW16012
10%
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
Preferred devices are Motorola recommended choices for future use and best overall value.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc.
REV 2
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
450
—
—
Vdc
—
—
—
—
0.25
1.5
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Table 2)
(IC = 100 mA, IB = 0)
Collector Cutoff Current
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc)
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc, TC = 100_C)
ICEV
mAdc
Collector Cutoff Current
(VCE = 850 Vdc, RBE = 50 Ω, TC = 100_C)
ICER
—
—
2.5
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
—
—
10
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
IS/b
See Figure 15
RBSOA
See Figure 16
ON CHARACTERISTICS (1)
Collector–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.7 Adc)
(IC = 10 Adc, IB = 1.3 Adc)
(IC = 10 Adc, IB = 1.3 Adc, TC = 100_C)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.3 Adc)
(IC = 10 Adc, IB = 1.3 Adc, TC = 100_C)
VBE(sat)
DC Current Gain
(IC = 15 Adc, VCE = 5.0 Vdc)
Vdc
—
—
—
—
—
—
2.5
3.0
3.0
—
—
—
—
1.5
1.5
hFE
5.0
—
—
—
Cob
—
—
400
pF
td
—
20
—
ns
tr
—
200
—
ts
—
1200
—
tf
—
200
—
ts
—
650
—
tf
—
80
—
tsv
—
800
1800
tfi
—
50
200
tc
—
90
250
tsv
—
1050
—
tfi
—
70
—
tc
—
120
—
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rose Time
Storage Time
Fall Time
Storage Time
(IC = 10 Adc,
VCC = 250 Vdc,
IB1 = 1.3 Adc,
PW = 30 µs,
Duty Cycle
2.0%)
(IB2 = 2.6 Adc,
RB2 = 1.6 Ω)
(VBE(off) = 5.0 Vdc)
Fall Time
Inductive Load (Table 2)
Storage Time
Fall Time
Crossover Time
Storage Time
Fall Time
(IC = 10 Adc,
IB1 = 1.3 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TC = 100_C)
(TC = 150_C)
Crossover Time
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
2
ns
2.0%
Motorola Bipolar Power Transistor Device Data
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
VCEO(sus)
450
—
—
Vdc
—
—
—
—
0.25
1.5
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (Table 2)
(IC = 100 mA, IB = 0)
Collector Cutoff Current
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc)
(VCEV = 850 Vdc, VBE(off) = 1.5 Vdc. TC = 100_C)
ICEV
mAdc
Collector Cutoff Current
(VCE = 850 Vdc, RBE = 50 Ω, TC = 100_C)
ICER
—
—
2.5
mAdc
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
—
—
10
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
IS/b
See Figure 15
RBSOA
See Figure 16
ON CHARACTERISTICS (1)
Collector–Emitter Saturation Voltage
(IC = 5.0 Adc, IB = 0.7 Adc)
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 10 Adc, IB = 1.0 Adc, TC = 100_C)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 10 Adc, IB = 1.0 Adc)
(IC = 10 Adc, IB = 1.0 Adc, TC = 100_C)
VBE(sat)
DC Current Gain
(IC = 15 Adc, VCE = 5.0 Vdc)
Vdc
—
—
—
—
—
—
2.5
3.0
3.0
—
—
—
—
1.5
1.5
hFE
7.0
—
—
—
Cob
—
—
400
pF
td
—
20
—
ns
tr
—
200
—
ts
—
900
—
tf
—
150
—
ts
—
500
—
tf
—
40
—
tsv
—
650
1500
tfi
—
30
150
tc
—
50
200
tsv
—
850
—
tfi
—
30
—
tc
—
70
—
Vdc
DYNAMIC CHARACTERISTICS
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1.0 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rose Time
Storage Time
Fall Time
Storage Time
(IC = 10 Adc,
VCC = 250 Vdc,
IB1 = 1.0 Adc,
PW = 30 µs,
Duty Cycle
2.0%)
(IB2 = 2.0 Adc,
RB2 = 1.6 Ω)
(VBE(off) = 5.0 Vdc)
Fall Time
Inductive Load (Table 2)
Storage Time
(TC = 100_C)
Fall Time
Crossover Time
Storage Time
Fall Time
(IC = 10 Adc,
IB1 = 1.0 Adc,
VBE(off) = 5.0 Vdc,
VCE(pk) = 400 Vdc)
(TC = 150_C)
Crossover Time
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
ns
2.0%
Motorola Bipolar Power Transistor Device Data
3
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
TYPICAL STATIC CHARACTERISTICS
50
hFE , DC CURRENT GAIN
TC = 100°C
25°C
20
10
5.0
VCE = 5.0 V
3.0
0.2
0.5
1.0
5.0
2.0
IC, COLLECTOR CURRENT (AMPS)
10
20
2.0
0.7
0.3
0.2
TC = 25°C
0.1
0.02
0.05
1.5
VBE, BASE–EMITTER VOLTAGE (VOLTS)
5.0
3.0
2.0
1.0
0.7
0.5
βf = 10
TC = 100°C
βf = 10
TC = 25°C
0.3
0.2
0.1
0.07
0.05
0.15 0.2 0.3
βf = 5.0
TC = 25°C
0.5 0.7 1.0
2.0
3.0
5.0 A
IC = 1.0 A
0.1 0.2
0.5 1.0 2.0
IB, BASE CURRENT (AMPS)
5.0
5.0 7.0 10
βf = 10
1.0
TC = 25°C
0.7
75°C
100°C
0.5
0.4
0.3
0.2
0.15
0.15 0.2 0.3
15
0.5 0.7 1.0
2.0
3.0
5.0
7.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
Figure 3. Collector–Emitter Saturation Voltage
Figure 4. Base–Emitter Voltage
104
10000
103
5000
3000
2000
TJ = 150°C
102
125°C
101
100°C
75°C
100
10–1
– 0.4
REVERSE
FORWARD
10
Figure 2. Collector Saturation Region
C, CAPACITANCE (pF)
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT ( µ A)
10 A
0.5
Figure 1. DC Current Gain
VCE = 250 V
0
– 0.2
+ 0.2
+ 0.4
VBE, BASE–EMITTER VOLTAGE (VOLTS)
10
15
Cib
1000
500
300
200
100
Cob
TC = 25°C
50
20
25°C
Figure 5. Collector Cutoff Region
4
15 A
1.0
+ 0.6
10
0.1
0.3 0.5 1.0 2.0 5.0 10 20 30 50 100
VR, REVERSE VOLTAGE (VOLTS)
300 500 850
Figure 6. Capacitance
Motorola Bipolar Power Transistor Device Data
5000
5000
3000
2000
VBE(off) = 0 V
2.0 V
1000
t sv, STORAGE TIME (ns)
t sv, STORAGE TIME (ns)
3000
2000
5.0 V
500
βf* = 5.0
TC = 75°C
VCC = 20 V
300
200
100
0.07
0.05
1.5
VBE(off) = 0 V
2.0 V
1000
700
500
5.0 V
300
200
βf* = 10
TC = 75°C
VCC = 20 V
100
2.0
3.0
5.0
7.0
0.05
1.5
15
10
2.0
3.0
Figure 7. Storage Time
tfi, COLLECTOR CURRENT FALL TIME (ns)
tfi, COLLECTOR CURRENT FALL TIME (ns)
VBE(off) = 0 V
300
5.0 V
200
100
2.0 V
βf* = 5.0
TC = 75°C
VCC = 20 V
10
1.5
2.0
3.0
5.0
7.0
10
500
300
200
100
50
20
10
1.5
15
VBE(off) = 0 V
2.0 V
βf* = 10
TC = 75°C
VCC = 20 V
2.0
Figure 9. Collector Current Fall Time
5.0
7.0
10
15
1500
1000
VBE(off) = 0 V
500
300
200
t c , CROSSOVER TIME (ns)
t c , CROSSOVER TIME (ns)
3.0
Figure 10. Collector Current Fall Time
1500
1000
50
5.0 V
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
100
15
10
1000
500
20
7.0
Figure 8. Storage Time
1000
50
5.0
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMPS)
5.0 V
βf* = 5.0
TC = 75°C
VCC = 20 V
20
15
1.5
2.0
2.0 V
3.0
5.0
7.0
IC, COLLECTOR CURRENT (AMPS)
Figure 11. Crossover Time
10
15
500
VBE(off) = 0 V
300
200
100
50
20
15
1.5
2.0 V
βf* = 10
TC = 75°C
VCC = 20 V
2.0
5.0 V
3.0
5.0
7.0
15
10
IC, COLLECTOR CURRENT (AMPS)
Figure 12. Crossover Time
I
*βf = C
IB1
Motorola Bipolar Power Transistor Device Data
5
GUARANTEED SAFE OPERATING AREA LIMITS
VCE(pk)
90% VCE(pk)
tsv
IC
I B2 , REVERSE BASE CURRENT (AMPS)
10
IC(pk)
90% IC(pk)
trv
tfi
tti
tc
VCE
IB
10% VCE(pk)
90% IB1
10%
IC(pk) 2% IC
9
8
7
6
4
3
1.0 A
IC = 10 A
TC = 25°C
2
1
0
TIME
IB1 = 2.0 A
5
0
Figure 13. Inductive Switching Measurements
4.0
1.0
2.0
3.0
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
5.0
Figure 14. Peak Reverse Base Current
IC, COLLECTOR CURRENT (AMPS)
20
10 µs
10
5.0
I C(pk) , PEAK COLLECTOR CURRENT (AMPS)
SAFE OPERATING AREA INFORMATION
MJ16010/12
MJW16010,12
1.0 ms
dc
2.0
1.0
TC = 25°C
0.5
0.1
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.05
0.02
5.0
I
*βf = C
IB1
10
20 30
50 70 100
200 300
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
450
Figure 15. Maximum Forward Bias
Safe Operating Area
FORWARD BIAS
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 15 is based on TC = 25_C; T J(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the
voltages shown on Figure 15 may be found at any case temperature by using the appropriate curve on Figure 18.
T J(pk) may be calculated from the data in Figure 17. At
high case temperatures, thermal limitations will reduce the
6
20
18
14
10
βf* ≥ 4.0
TC ≤ 100°C
6.0
VBE(off) = 0 V
1.0 to 5.0 V
2.0
0
100
150
600 700 850
200 250
350
450
VCE(pk), PEAK COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 16. Maximum Reverse Bias
Safe Operating Area
power that can be handled to values less than the limitations
imposed by second breakdown.
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base–to–emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage current condition allowable during reverse biased turnoff. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 16 gives the RBSOA characteristics.
Motorola Bipolar Power Transistor Device Data
r(t), TRANSIENT THERMAL RESPONSE
(NORMALIZED)
1.0
RθJC(t) = r(t) RθJC
RθJC = 1.0°C/W or 1.11°C/W
TJ(pk) – TC = P(pk) RθJC(t)
0.1
0.01
0.01
0.1
1.0
10
100
1K
t, TIME (ms)
Figure 17. Thermal Response
POWER DERATING FACTOR (%)
100
SECOND BREAKDOWN DERATING
80
60
THERMAL DERATING
40
20
0
MJW16010, MJW16012
MJ16010, MJ16012
0
80
120
TC, CASE TEMPERATURE (°C)
40
160
200
Figure 18. Power Derating
Table 1. Resistive Load Switching
td and tr
0V
2N6191
*IB
T.U.T.
RB = 10 Ω
50
+
H.P. 214
or
EQUIV.
P.G.
*IC
RL
– 10 µF
0.02 µF
RB1
A
RB2
0.02 µF
2N5337
5
0
VCC
100
20
≈ – 35 V
H.P. 214
or
EQUIV.
P.G.
+ Vdc ≈ 11 Vdc
ts and tf
500
1.0 µF 100
–V
VCC = 250 Vdc
RL = 25 Ω
IC = 10 Adc
IB = 1.0 Adc
≈ 11 V
0V
Vin
+V
0V
–5 V
T.U.T.
A
RL
*IC
tr ≤ 15 ns
*Tektronix AM503
*P6302 or Equivalent
50
*IB
VCC = 250 Vdc
RL = 25 Ω
IC = 10 Adc
VCC
IB1 = 1.0 Adc
RB1 = 10 Ω
IB2 = 2.0 Adc
RB2 = 1.6 Ω
For VBE(off) = 5.0 V, RB2 = 0 Ω
Note: Adjust – V to obtain desired VBE(off) at Point A.
Motorola Bipolar Power Transistor Device Data
7
Table 2. Inductive Load Switching
0.02 µF
H.P. 214
or EQUIV.
P.G.
100
+ V ≈ 11 V
2N6191
20
+
0V
10 µF
–
RB1
≈ – 35 V
A
RB2
0.02 µF
1.0 µF
+ –
50
2N5337
500
100
–V
IC(pk)
T1
+V
IC
0V
VCE(pk)
*IC
–V
L
VCE
T.U.T.
A
VCE(pk) = VCE(clamp)
MR856
t1
(ICpk)
[ LcoilVCC
*IB
50
Vclamp
IB1
VCC
IB
T1 adjusted to obtain IC(pk)
VCEO(sus)
L = 10 mH
RB2 = ∞
VCC = 20 V Its
Inductive Switching
L = 200 µH
RB2 = 0
VCC = 20 V
RB1 selected for desired IB1
RBSOA
L = 200 µH
RB2 = 0
VCC = 20 V
RB1 selected for desired IB1
*Tektronix AM503
*P6302 or Equivalent
Scope — Tektronix
7403 or Equivalent
Note: Adjust – V to obtain desired VBE(off) at Point A.
IB2
TYPICAL INDUCTIVE SWITCHING WAVEFORMS
tsv
IC(pk) = 10 A
IB1 = 1.0 A
VBE(off) = 5.0 V
VCE(pk) = 400 V
TC = 25°C
Time Base =
0
100 ns/cm
tfi, tc
VCE(pk)
I B1
IC(pk) = 10 A
IB1 = 1.0 A
VBE(off) = 5.0 V
VCE(pk) = 400 V
TC = 25°C
Time Base =
20 ns/cm
IC(pk)
t fi = 20 ns
VCE(pk)
VCE(sat)
t sv = 370 ns
8
I B2
VCE(sat)
tc
24 ns
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.
C
SEATING
PLANE
–T–
E
D
K
2 PL
0.13 (0.005)
U
M
Y
M
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
V
–Y–
L
V
T Q
M
2
H
G
B
M
T Y
1
–Q–
0.13 (0.005)
M
INCHES
MIN
MAX
1.550 REF
–––
1.050
0.250
0.335
0.038
0.043
0.055
0.070
0.430 BSC
0.215 BSC
0.440
0.480
0.665 BSC
–––
0.830
0.151
0.165
1.187 BSC
0.131
0.188
MILLIMETERS
MIN
MAX
39.37 REF
–––
26.67
6.35
8.51
0.97
1.09
1.40
1.77
10.92 BSC
5.46 BSC
11.18
12.19
16.89 BSC
–––
21.08
3.84
4.19
30.15 BSC
3.33
4.77
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
0.25 (0.010)
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
–T–
–Q–
T B M
E
–B–
C
4
U
A
R
1
K
2
3
–Y–
P
F
V
D
0.25 (0.010)
M
L
Y Q
S
H
J
DIM
A
B
C
D
E
F
G
H
J
K
L
P
Q
R
U
V
MILLIMETERS
MIN
MAX
20.40
20.90
15.44
15.95
4.70
5.21
1.09
1.30
1.50
1.63
1.80
2.18
5.45 BSC
2.56
2.87
0.48
0.68
15.57
16.08
7.26
7.50
3.10
3.38
3.50
3.70
3.30
3.80
5.30 BSC
3.05
3.40
STYLE 3:
PIN 1.
2.
3.
4.
G
INCHES
MIN
MAX
0.803
0.823
0.608
0.628
0.185
0.205
0.043
0.051
0.059
0.064
0.071
0.086
0.215 BSC
0.101
0.113
0.019
0.027
0.613
0.633
0.286
0.295
0.122
0.133
0.138
0.145
0.130
0.150
0.209 BSC
0.120
0.134
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 340F–03
TO–247AE
ISSUE E
Motorola Bipolar Power Transistor Device Data
9
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10
◊
Motorola Bipolar Power Transistor Device Data
*MJ16010/D*
MJ16010/D
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