Vishay BYT54G Fast avalanche sinterglass diode Datasheet

BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M
www.vishay.com
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
949539
APPLICATIONS
MECHANICAL DATA
• Very fast rectification and switching diodes
Case: SOD-57






Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
BYT54M-TR
BYT54M-TAP
5000 per 10" tape and reel
5000 per ammopack
25 000
25 000
PART
TYPE DIFFERENTIATION
PACKAGE
BYT54A
BYT54B
BYT54D
BYT54G
BYT54J
BYT54K
BYT54M
VR = 50 V; IF(AV) = 1.25 A
VR = 100 V; IF(AV) = 1.25 A
VR = 200 V; IF(AV) = 1.25 A
VR = 400 V; IF(AV) = 1.25 A
VR = 600 V; IF(AV) = 1.25 A
VR = 800 V; IF(AV) = 1.25 A
VR = 1000 V; IF(AV) = 1.25 A
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
SOD-57
BYT54M
BYT54M
PARTS TABLE
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
Average forward current
Non repetitive reverse avalanche energy
Junction and storage temperature range
Rev. 1.8, 11-Sep-12
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
See electrical characteristics
BYT54A
BYT54B
BYT54D
BYT54G
BYT54J
BYT54K
BYT54M
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
VR = VRRM
IFSM
IF(AV)
IF(AV)
ER
ER
ER
Tj = Tstg
50
100
200
400
600
800
1000
30
0.75
1.25
10
10
10
- 55 to + 175
V
V
V
V
V
V
V
A
A
A
mJ
mJ
mJ
°C
tp = 10 ms, half sine wave
On PC board
l = 10 mm
I(BR)R = 0.4 A
BYT54J
BYT54K
BYT54M
Document Number: 86031
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M
www.vishay.com
Vishay Semiconductors
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
SYMBOL
VALUE
Lead length l = 10 mm, TL = constant
RthJA
45
UNIT
K/W
On PC board with spacing 25 mm
RthJA
100
K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
SYMBO
L
MIN.
TYP.
MAX.
IF = 1 A
VF
-
-
1.5
V
VR = VRRM
IR
-
-
5
μA
VR = VRRM, Tj = 150 °C
IR
-
-
150
μA
IF = 0.5 A, IR = 1 A, iR = 0.25 A
trr
-
-
100
ns
PARAMETER
TEST CONDITION
Forward voltage
Reverse current
Reverse recovery time
PART
UNIT
1.4
120
IFAV - Average Forward Current (A)
RthJA - Ther. Resist. Junction/Ambient (K/W)
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
100
80
60
l
l
40
20
TL = constant
1.0
5
10
15
20
25
0.6
RthJA = 100 K/W
PCB: d = 25 mm
0.4
0.2
0
0
30
l - Lead Length (mm)
949552
RthJA = 45 K/W
I = 10 mm
0.8
0
0
VR = VRRM
half sinewave
1.2
Fig. 1 - Max. Thermal Resistance vs. Lead Length
20
40
60
80 100 120 140 160 180
Tamb - Ambient Temperature (°C)
16339
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
10
1000
VR = VRRM
IR - Reverse Current (μA)
IF - Forward Current (A)
Tj = 175 °C
1
Tj = 25 °C
0.1
0.01
100
10
0.001
0
16338
0.5
1.0
1.5
2.0
2.5
3.0
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 1.8, 11-Sep-12
1
25
3.5
16340
50
75
100
125
150
175
Tj - Junction Temperature (°C)
Fig. 4 - Max. Reverse Current vs. Junction Temperature
Document Number: 86031
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYT54A, BYT54B, BYT54D, BYT54G, BYT54J, BYT54K, BYT54M
Vishay Semiconductors
35
450
f = 1 MHz
VR = VRRM
400
CD - Diode Capacitance (pF)
PR - Reverse Power Dissipation (mW)
www.vishay.com
350
300
PR-Limit
at 100 % VR
250
200
150
PR-Limit
at 80 % VR
100
30
25
20
15
10
5
50
0
0.1
0
25
50
75
100
125
150
175
Tj - Junction Temperature (°C)
16341
16342
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
1
10
100
VR - Reverse Voltage (V)
Fig. 6 - Diode Capacitance vs. Reverse Voltage
3.6 (0.142) max.
0.82 (0.032) max.
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
20543
Rev. 1.8, 11-Sep-12
Document Number: 86031
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
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Revision: 12-Mar-12
1
Document Number: 91000
Mouser Electronics
Authorized Distributor
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