AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Applications Small Cells / Repeaters / DAS 3G / 4G Wireless Infrastructure Wireless Backhaul Portable Radios LTE / WCDMA / CDMA 14 Pin 5x6 mm DFN Package Product Features Functional Block Diagram 700-2900 MHz +39 dBm P1dB +12 V Supply Voltage -50 dBc ACLR @ 28dBm Pout 1.5% EVM @ 30 dBm Pout 13 dB Gain @ 2.6GHz Fast Shut-Down Capability Internal Active Bias and Temp Compensation Lead-free / RoHS-compliant Pin 1 Reference Mark PIN_Vbias 1 NC 2 14 PIN_Vpd NC 3 RFin 4 11 RFout/ Vcc RFin 5 10 Rfout/ Vcc RFin 6 9 Rfout/ Vcc NC 7 8 NC ACTIVE BIAS 13 NC 12 NC Backside Paddle - RF/DC GND General Description Pin Configuration The AP561 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage amplifier has 13 dB Gain, while being able to achieve high performance for 0.7–2.9 GHz applications with up to +39 dBm of compressed 1dB power. The AP561 uses a high reliability +12V InGaP/GaAs HBT process technology. The device incorporates proprietary bias circuitry to compensate for variations in linearity and current draw over temperature. The device does not require any negative bias voltage; an internal active bias allows the AP561 to operate directly off a commonly used +12V supply and has the added feature of a +5V power down control pin. RoHS-compliant 5x6mm DFN package is surface mountable to allow for low manufacturing costs to the end user. Pin No. Label 1 2, 3, 7, 8, 12, 13 4, 5, 6 9, 10, 11 14 Backside paddle PIN_VBIAS N/C RF IN RF Output / VCC PIN_VPD RF / DC GND Ordering Information Part No. Description AP561-F AP561-PCB900 AP561-PCB2140 AP561-PCB2500 0.7-2.9 GHz 12V 8W Power Amplifier 869-894 MHz Evaluation Board 2110-2170 MHz Evaluation Board 2.5-2.7 GHz Evaluation Board Standard T/R size = 1000 pieces on a 7” reel Datasheet: Rev B 09-17-13 © 2013 TriQuint - 1 of 17 - Disclaimer: Subject to change without notice www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Parameter Rating Storage Temperature RF Input Power, CW, 50Ω, T=25°C Supply Voltage (VCC) BVcbo Power Dissipation −55 to 150°C +33 dBm +15 V +35 V 14 W Operation of this device outside the parameter ranges given above may cause permanent damage. Min Supply Voltage (VCC) TCASE Tj for >106 hours MTTF Typ Max Units 12.0 −40 V °C °C +85 158 Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all recommended operating conditions. Electrical Specifications Test conditions unless otherwise noted: VCC =+12V, VPD =+5V, Temp= +25°C, using AP561-PCB2600 application circuit Parameter Operational Frequency Range Test Frequency Output Channel Power Gain Input Return Loss Output Return Loss Error Vector Magnitude Collector Efficiency RF Switching Speed Output P1dB Operating Current, ICC Quiescent Current, ICQ Reference Current, IREF Thermal Resistance, θjc Conditions Min Typ 700 Max Units 2900 MHz MHz dBm dB dB dB % % ns dBm mA mA mA °C/W 2600 +30 13.0 14.5 6.5 1.7 16.2 50 +39 510 300 10 See note 1. See note 2. Module (junction to case) 6.0 Notes: 1. Using an 802.16-2004 OFDMA, 64QAM-1/2, 1024-FFT, 20 symbols, 30 subchannels signal, 9.5 dB PAR @ 0.01%. 2. Switching speed: 50% TTL to 100/0% RF. Vpd used for device power down (low=RF off). Datasheet: Rev B 09-17-13 © 2013 TriQuint - 2 of 17 - Disclaimer: Subject to change without notice www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Device Characterization Test conditions unless otherwise noted: VCC =+12V, VPD =+5V, ICQ = 300 mA (typ.), Temp= +25°C, calibrated to device pins S(1,1) AP561 S22 S(2,2) Max AP561Swp6GHz 0.8 0 2. 2. 0 6 0. 0.8 1.0 Swp Max 6GHz 6 0. 40 1.0 S11 Gain / Maximum Stable Gain 0. 4 0. 4 0 3. 20 4. 0 3. 0 4. 5.0 0.2 0.2 10.0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.4 0.2 0 10.0 5.0 4.0 3.0 2.0 1.0 0.8 0.6 0.2 0 -10.0 2 -0. 0 -4 .0 .4 -0 -2 -0.8 Swp Min 0.05GHz Swp Min 0.05GHz -1.0 -0 .6 .0 -2 -0.8 Frequency (GHz) -1.0 6 -0 .6 4 .0 -3 .0 2 -3 .0 .4 -0 -40 0 -5. 2 -0. DB(|S(2,1)|) AP561 -4 .0 DB(GMax()) AP561 0 -20 -5. 0.4 10.0 0 -10.0 Gain (dB) 0 5.0 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in red. S-Parameters Test conditions unless otherwise noted: VCC =+12V, VPD =+5V, Temp= +25°C, 50 Ohm system Freq (GHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 100 300 500 700 900 1100 1300 1500 1700 1900 2100 2300 2500 2700 2900 3100 3300 3500 3700 3900 4100 4300 4500 -0.83 -0.43 -0.35 -0.32 -0.34 -0.40 -0.47 -0.53 -0.59 -0.87 -1.14 -1.58 -2.07 -2.11 -1.52 -0.93 -0.60 -0.44 -0.30 -0.20 -0.16 -0.14 -0.15 -0.13 -174.19 -177.42 179.26 177.35 175.28 173.11 170.97 168.26 165.56 161.87 158.99 157.33 158.08 161.67 163.86 162.94 161.26 159.75 157.96 156.27 154.67 152.82 150.80 148.32 27.09 22.26 14.06 9.81 7.08 5.19 3.82 2.80 2.18 2.75 2.84 3.04 3.08 2.27 0.21 -2.57 -5.57 -8.55 -11.15 -13.44 -15.57 -17.53 -19.35 -21.11 122.75 106.35 89.18 79.93 71.64 63.88 55.72 47.12 37.92 25.71 12.58 -4.10 -26.45 -53.16 -79.14 -100.12 -115.90 -127.57 -136.15 -143.55 -150.57 -157.27 -163.61 -170.25 -43.35 -43.10 -41.21 -40.63 -40.35 -40.26 -40.09 -39.83 -39.58 -38.56 -37.79 -37.20 -36.71 -36.83 -37.65 -38.71 -39.66 -40.18 -40.26 -40.26 -39.83 -39.91 -39.49 -39.09 29.12 8.71 1.08 0.69 3.54 -3.79 -9.55 -16.44 -23.59 -35.47 -49.59 -69.96 -98.60 -134.34 -170.26 157.51 133.27 115.97 102.36 94.11 85.11 78.44 72.37 66.71 -1.38 -1.82 -2.02 -2.10 -2.09 -1.99 -1.86 -1.78 -1.68 -1.67 -1.45 -1.07 -0.57 -0.20 -0.18 -0.38 -0.55 -0.68 -0.77 -0.84 -0.87 -0.87 -0.86 -0.89 -106.01 -138.64 -164.78 -172.01 -176.13 -177.89 -178.93 -179.77 179.34 177.40 176.17 174.50 171.36 166.20 160.52 155.92 152.79 150.56 148.63 147.06 145.70 144.40 143.38 142.13 Datasheet: Rev B 09-17-13 © 2013 TriQuint - 3 of 17 - Disclaimer: Subject to change without notice www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier AP561-PCB900 Evaluation Board (896−894 MHz) Notes: 1. 2. 3. 4. 5. 6. 7. See Evaluation Board PCB Information section for material and stack-up. All components are of 0603 size unless stated on the schematic. The right edge of C20 is placed at 153 mil from the AP561 RFin pin. The right edge of C21 is placed at 55 mil from the AP561 RFin pin. The right edge of C24 is placed at 230 mil from the AP561 RFin pin. The left edge of C22 is placed at 78 mil from the AP561 RFout pin. The left edge of L2 is placed at 135 mil from the AP561 RFout pin. 8. The left edge of C23 is placed at 265 mil from the AP561 RFout pin. 9. Do not exceed 5.5V on Vpd or damage to D1 will occur. Do not exceed 13V on Vcc or damage to D2 will occur. Bill of Material – AP561-PCB900 Reference Des. Value Description N/A U1 C12 C4, C11 C5, C18, C7 C13 R1 R7 R2 R8 C1 C20 C21 C22 C23, C24 L2 L1 FB1 D1 D2 N/A N/A 0.1 uF 1000 pF 100 pF 10 uF 200 Ω 330 Ω 10 kΩ 51 Ω 22 pF 10 pF 1.5 Ω 3.0 pF 6.8 pF 1.5 nH 18 nH N/A N/A N/A Printed Circuit Board – FR4 0.7-2.9 GHz 8W Power Amplifier CAP, 0603,10%, 50V, X7R CAP, 0603, 5%, 50V, NPO CAP, 0603, 5%, 50V, NPO CAP, 1206, 10%, 15V, Tantalum RES, 0805, 5%, 1/10W. Chip. RES, 0603,5%, 1/10W, Chip RES, 0603, 5%,1/16W, Chip RES, 0603, 5%, 1/16W, Chip CAP, 0603, 5%, 50V, NPO/COG CAP, 0603, 2%, ACCU-P, 50V RES, 0603,5%, 1/10W, Chip CAP, 0603, ± 0.05pF, ACCU-P, 50V CAP, 0603, ± 0.05pF, ACCU-P, 50V IND, 0603, ±0.3nH IND, 0805, 5%, ceramic core Filter EMI Ferrite Bead TVS Diode Array, 5V, SOT23, 2Ch Diode TVS, 13V, 400W, 5% SMA Datasheet: Rev B 09-17-13 © 2013 TriQuint Manuf. - 4 of 17 - TriQuint various various various various various various various various various AVX various AVX AVX Toko Coilcraft various On-Semiconductor On-Semiconductor Part Number AP561-F 06035J100GBSTR 06035J3R0ABSTR LL1608-FSL1N5S 0805HQ-18NXJC SM05T1G 1SMA13AT3G Disclaimer: Subject to change without notice www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Typical Performance – AP561-PCB900 Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 300 mA (typ.), Temp=+25°C Parameter Units Typical Values Frequency Gain Input Return Loss Output Return Loss ACLR @ 29dBm Output Power [2] IMD3 @ 29dBm Output Power [1] Operating Current, ICC @ 29dBm Output Power [2] Collector Efficiency @ 29dBm Output Power [2] Output P1dB 869 15.4 18 9 -52 -46 470 14 39.2 880 15.2 15 10 -52 -46.5 465 14.5 39.1 894 15.0 13 11 -52 -47 460 14.7 38.9 MHz dB dB dB dBc dBc mA % dBm Notes: 1. IMD3 is measured with 1 MHz tone spacing. 2. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability. Performance Plots – AP561-PCB900 Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 300 mA (typ.), Temp=+25°C Gain vs. Frequency 17 Return Loss vs. Frequency 0 15 14 13 0.86 0.87 0.88 0.89 S22 S11 -5 -10 -15 0.88 0.89 0.90 20 22 Frequency (GHz) ACLR vs. Output Power vs. Frequency W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability 3.84 MHz BW 24 26 28 30 Output Power/Tone (dBm) Efficiency vs. Output Power 20 Temp.=+25oC W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability 3.84 MHz BW -50 -60 0.87 Frequency (GHz) -45 Temp.=+25oC -55 -20 0.86 0.90 IMD3 vs. Output Power Frequency : 880 MHz CW Signal -45 IMD3 (dBc) Return Loss (dB) Gain (dB) 16 -40 Temp : +25 C Vpd = 5V Temp : +25 C Vpd = 5V Collector Current vs. Output Power 600 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability 3.84 MHz BW Frequency : 880 MHz 550 Frequency : 880 MHz 869 MHz 880 MHz 894 MHz -55 500 Temp.=+25oC Icc (mA) Efficiency (%) ACLR (dBc) 15 -50 10 450 400 5 350 0 -60 20 22 24 26 Output Power (dBm) Datasheet: Rev B 09-17-13 © 2013 TriQuint 28 30 300 20 22 24 26 Output Power (dBm) - 5 of 17 - 28 30 20 22 24 26 28 30 Output Power (dBm) Disclaimer: Subject to change without notice www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier R7 C23 C22 C20 L1 C18 R1 FB1 AP561-PCB2140 Evaluation Board (2110−2170 MHz) Notes: 1. See Evaluation Board PCB Information section for material and stack-up. 2. All components are of 0603 size unless stated on the schematic. 3. The right edge of C20 is placed at 160 mil from the AP561 RFin pin. 4. The right edge of C21 is placed at 45 mil from the AP561 RFin pin. 5. The left edge of C22 is placed at 68 mil from the AP561 RFout pin. 6. The left edge of L2 is placed at 125 mil from the AP561 RFout pin. 7. The left edge of C23 is placed at 263 mil from the AP561 RFout pin. 8. Do not exceed 5.5V on Vpd or damage to D1 will occur. Do not exceed 13V on Vcc or damage to D2 will occur. 9. The primary RF microstrip line is 50. The RF trace is cut at component C21 and L2 for this particular reference design. Bill of Material – AP561-PCB2140 Reference Des. Value Description N/A U1 C12 C4,C11 C5 C13 R1 R7 R2 C1, C7, C18 C20 C21 C22 C23 L2 L1 FB1 D1 D2 N/A N/A 0.1 uF 1000 pF 100 pF 10 uF 200 Ω 280 Ω 10 kΩ 22 pF 2.4 pF 6.8 pF 3.9 pF 2.0 pF 1.2 nH 18 nH N/A N/A N/A Printed Circuit Board – FR4 0.7-2.9 GHz 8W Power Amplifier CAP, 0603,10%, 50V, X7R CAP, 0603, 5%, 50V, NPO CAP, 0603, 5%, 50V, NPO CAP, 1206, 10%, 15V, Tantalum RES, 0805,5%,1/10W. CHIP. RES, 0603,5%, 1/10W, Chip RES, 0603, 5%,1/16W, Chip CAP, 0603, 5%, 50V, NPO/COG CAP, 0603, ± 0.05 pF, ACCU-P, 50V CAP, 0603, ± 0.1 pF, ACCU-P, 50V CAP, 0603, ± 0.05pF, ACCU-P, 50V CAP, 0603, ± 0.05pF, ACCU-P, 50V IND, 0603, ±0.3nH IND, 0805, 5%, ceramic core Filter EMI Ferrite Bead TVS Diode Array, 5V, SOT23, 2Ch Diode TVS, 13V, 400W, 5% SMA Datasheet: Rev B 09-17-13 © 2013 TriQuint Manuf. - 6 of 17 - TriQuint various various various various various various various various AVX AVX AVX AVX Toko Coilcraft various On-Semiconductor On-Semiconductor Part Number AP561-F 06035J2R4ABSTR 06035J6R8ABSTR 06035J3R9ABSTR 06035J2R0ABSTR LL1608-FSL1N2S 0805HQ-18NXJC SM05T1G 1SMA13AT3G Disclaimer: Subject to change without notice www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Typical Performance – AP561-PCB2140 Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 370 mA (typ.), Temp=+25°C Parameter Units Typical Values Frequency Gain Input Return Loss Output Return Loss ACLR @ 28dBm Output Power [2] IMD3 @ 28dBm Output Power [1] Operating Current, ICC @ 28dBm Output Power [2] Collector Efficiency @ 28dBm Output Power [2] Output P1dB 2110 12.4 10 6.3 -48 -42.7 565 9 39.3 2140 12.4 8 8 -48 -42.3 550 9.5 39.7 2170 12.3 6.5 11 -48 -43.8 525 10 39.7 MHz dB dB dB dBc dBc mA % dBm Notes: 1. IMD3 is measured with 1 MHz tone spacing. 2. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability. Performance Plots – AP561-PCB2140 Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 350 mA (typ.), Temp=+25°C Gain vs. Frequency 14 13 11 10 -6 -9 -12 9 8 2.00 2.04 2.08 2.12 2.16 2.04 2.08 Frequency (GHz) W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability 3.84 MHz BW 2.16 35 2.11 2.20 - 40°C +25°C +85°C -50 28 30 32 22 Temp.=+25oC 2.17 GHz 26 Collector Current vs. Output Power 28 30 32 20 22 24 26 28 30 32 Output Power (dBm) IMD3 vs. Output Power -35 Frequency : 2.14 GHz CW Signal Frequency : 2.14 GHz Temp.=+25oC -40 IMD3 (dBc) Icc(mA) 24 600 500 400 -45 -50 -55 300 -60 20 22 24 26 28 30 20 Output Power (dBm) Datasheet: Rev B 09-17-13 © 2013 TriQuint Frequency : 2.14 GHz 10 Output Power (dBm) W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability 3.84 MHz BW 700 2.17 0 20 Output Power (dBm) 800 2.16 5 2.14 GHz -60 26 2.15 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability 3.84 MHz BW -55 -60 2.14 15 2.11 GHz 24 2.13 Efficiency vs. Output Power 20 Efficiency (%) ACLR (dBc) -50 22 2.12 Frequency (GHz) -45 20 37 Temp.=+25oC W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability 3.84 MHz BW -45 ACLR (dBc) 2.12 ACLR vs. Output Power vs. Frequency -40 Frequency : 2.14 GHz -55 38 Frequency (GHz) ACLR vs. Temperature -40 39 36 -15 2.00 2.20 Temp.=+25oC 40 S22 S11 P1dB (dBm) Return Loss (dB) -3 P1dB vs. Frequency 41 Temp : +25 C Vpd = 5V 12 Gain (dB) Return Loss vs. Frequency 0 Temp : +25 C Vpd = 5V 22 24 26 28 30 Output Power/Tone (dBm) - 7 of 17 - Disclaimer: Subject to change without notice www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier AP561-PCB2350 Evaluation Board (2300−2400 MHz) D2 D1 SM05T1G R2 SMAJ33 C13 10 uF 6032 FB1 10K C12 R7 0.1 uF C11 1000 pF FB1 C18 R1 R7 280 L1 R1 200 C5 C23 C22 C20 C4 100 pF C18 1000 pF 22 pF C1 J2 RF Input 22 pF R8 51 C21 C20 5.6 pF 1 2 3 4 5 6 7 U 1 AP561 2.0 pF L1 18 nH (0805) 14 13 12 11 10 9 8 Backside Paddle Ground C22 C23 3.0 pF 1.0 pF C7 J3 22 pF RF Output Notes: 1. See Evaluation Board PCB Information section for material and stack-up. 2. All components are of 0603 size unless stated on the schematic. 3. The right edge of C20 is placed at 123 mil from the AP561 RFin pin. 4. The right edge of C21 is placed at 45 mil from the AP561 RFin pin. 5. The left edge of C22 is placed at 30 mil from the AP561 RFout pin. 6. The left edge of C23 is placed at 280 mil from the AP561 RFout pin. 7. Do not exceed 5.5V on Vpd or damage to D1 will occur. Do not exceed 13V on Vcc or damage to D2 will occur. 8. The primary RF microstrip line is 50 . The RF trace is cut at component C21 for this particular reference design. Bill of Material – AP561-PCB2350 Reference Des. Value Description N/A U1 C1, C7, C18 C5 C4, C11 C12 C13 R2 R7 R1 FB1 C22 C21 C23 C20 L1 R8 D1 D2 N/A N/A 22 pF 100 pF 1000 pF 0.1 uF 10 uF 10 KΩ 280 Ω 200 Ω N/A 3.0 pF 5.6 pF 1.0 pF 2.0 pF 18 nH 51 Ω N/A N/A Printed Circuit Board – FR4 0.7-2.9 GHz 8W Power Amplifier Cap, Chip, 0603, 50V, 5%, NPO Cap, Chip, 0603, 50V, 5%, NPO Cap, Chip, 0603, 50V, 5%, NPO Cap, Chip, 0603, 50V, 5%, NPO Cap, Tantalum, 6032, 35V, 10% Resistor, Chip, 0603, 5%, 1/16W Resistor, Chip, 0603, 1%, 1/16W Resistor, Chip, 0805, 1%, 1/16W Ferrite Bead, 100 MHz Cap, Chip, 0603, 50V, +/-0.05pF Cap, Chip, 0603, 50V, +/-0.05pF Cap, Chip, 0603, 50V, +/-0.05pF Cap, Chip, 0603, 50V, +/-0.05pF Ind, Chip, 0805, 5%, Ceramic Resistor, Chip, 0603, 1%, 1/16W TVS Diode Array, 5V, SOT23, 2Ch Diode TVS, 33V, 400W, 5% SMA Datasheet: Rev B 09-17-13 © 2013 TriQuint Manuf. - 8 of 17 - TriQuint various various various various various various various various various AVX AVX AVX AVX Coilcraft various On-Semiconductor On-Semiconductor Part Number AP561-F 06035J3R0ABSTR 06035J5R6ABSTR 06035J1R0ABSTR 06035J2R0ABSTR 0805HQ-18NXJC SM05T1G 1SMA33AT3G Disclaimer: Subject to change without notice www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Typical Performance – AP561-PCB2350 Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 340 mA (typ.), Temp=+25°C Parameter Units Typical Values Frequency Gain Input Return Loss Output Return Loss EVM @ 28dBm Output Power [1] ACLR @ 28dBm Output Power [2] Operating Current, ICC @ 28dBm Output Power [2] Collector Efficiency @ 28dBm Output Power [2] Output P1dB 2300 13.6 21 6.6 1.6 -45.8 500 10.7 40.1 2350 13.6 23 7 1.4 -47.0 475 11.1 39.5 2400 13.2 14 7 1.1 -48.7 465 11.5 39.0 MHz dB dB dB % dBc mA % dBm Notes: 1. 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels.10.2dB PAR @ 0.01%, 3.84 MHz Carrier BW 2. ACLR test set-up: 3GPP WCDMA, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01% Probability. Performance Plots – AP561-PCB2350 Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 340 mA (typ.), Temp=+25°C 0 Temp : +25 C Vpd = 5V Return Loss (dB) Gain (dB) 14 -5 12 10 Return Loss vs. Frequency 2.32 2.34 2.36 2.38 -10 S22 S11 -15 -20 2.32 2.34 Frequency (GHz) W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability 3.84 MHz BW 2.36 2.38 37 35 2.30 2.40 2.32 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability 3.84 MHz BW 2.34 2.36 2.38 2.40 Frequency (GHz) Efficiency vs. Output Power 20 Temp.=+25oC Collector Current vs. Output Power 600 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability 3.84 MHz BW Frequency : 2.35 GHz 550 Frequency : 2.35 GHz 15 -50 -55 500 Temp.=+25oC Icc (mA) Efficiency (%) -45 ACLR (dBc) 38 Frequency (GHz) ACLR vs. Frequency -40 39 36 -30 2.30 2.40 Temp.=+25oC 40 -25 8 2.30 P1dB vs. Frequency 41 Temp : +25 C Vpd = 5V P1dB (dBm) Gain vs. Frequency 16 10 450 400 5 350 2.3 GHz 2.35 GHz 2.4 GHz -60 0 21 22 23 24 25 26 27 28 29 30 300 20 22 Output Power (dBm) 24 26 28 30 Output Power (dBm) 22 24 26 28 30 Output Power (dBm) EVM vs. Output Power 2.5 802.16-2004 O-FDMA, 64QAM-1/2, 1024FFT, 20 symbols and 30 subchannels. 10.2 dB PAR @ 0.01%, 3.84 MHz Carrier BW 2.0 EVM (%) 20 1.5 1.0 0.5 2.3GHz 0.0 20 21 22 23 2.35GHz 24 25 26 2.4GHz 27 28 29 30 Output Power (dBm) Datasheet: Rev B 09-17-13 © 2013 TriQuint - 9 of 17 - Disclaimer: Subject to change without notice www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier + D2 R1 C15 C16 C17 C7 C18 C10 C28 C27 U1 AP561 C25 C26 C11 C8 C23 C24 J1-4 Vcc C14 R2 D1 C6 C1 J1-3 GND C12 C13 R3 R4 C2 J1-2 Vpd DNP AP561-PCB2500 Evaluation Board (2500−2700 MHz) C20 Notes: 1. 2. 3. 4. 5. 6. 7. See Evaluation Board PCB Information section for material and stack-up. All components are of 0603 size unless stated on the schematic. The right edge of C24 is placed at 85 mil from the AP561 RFin pin. The left edge of C25 is placed at 55 mil from the AP561 RFout pin. The left edge of C27 is placed at 175 mil from the AP561 RFout pin. The DC bias feed is approximately a ¼ λ from output RF trace to C28. Do not exceed 5.5V on Vpd or damage to D1 will occur. Do not exceed 13V on Vcc or damage to D2 will occur. 8. The primary RF microstrip line is 50. The RF trace is cut at component C21 for this particular reference design. Bill of Material – AP561-PCB2500 Reference Des. Value Description N/A U1 C6, C16 C7, C10, C17 C8, C11, C18 C12 R1 R2 R3 C1, C20, C28 C23, C24, C25, C26 C2 C27 R4 D1 D2 N/A N/A 0.1 uF 1000 pF 100 pF 10 uF 200 Ω 330 Ω 10 kΩ 22 pF 1.2 pF 10 pF 0.6 pF 3.9 Ω N/A N/A Printed Circuit Board – Ultralam 0.7-2.9 GHz 8W Power Amplifier CAP, 0603,10%, 50V, X7R CAP, 0603, 5%, 50V, NPO CAP, 0603, 5%, 50V, NPO CAP, 1206, 10%, 15V, Tantalum RES, 0805, 5%, 1/10W. Chip RES, 0603,5%, 1/10W, Chip RES, 0603, 5%,1/16W, Chip CAP, 0603, 5%, 50V, NPO/COG CAP, 0603, ± 0.05 pF, ACCU-P, 50V CAP, 0603, 5%, 50V, NPO CAP, 0603, ± 0.05 pF, ACCU-P, 50V RES, 0603, 5%, 1/16W, Chip TVS Diode Array, 5V, SOT23, 2Ch Diode TVS, 13V Datasheet: Rev B 09-17-13 © 2013 TriQuint Manuf. - 10 of 17 - TriQuint various various various various various various various various AVX various AVX various On-Semiconductor On-Semiconductor Part Number AP561-F 06035J1R2ABSTR 06035J0R6ABSTR SM05T1G 1SMA33AT3G Disclaimer: Subject to change without notice www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Typical Performance – AP561-PCB2500 Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 300 mA (typ.), Temp=+25°C Parameter Units Typical Values Frequency Gain Input Return Loss Output Return Loss EVM @ 30dBm Output Power [1] Operating Current, ICC @ 30dBm Output Power [1] Collector Efficiency @ 30dBm Output Power [1] Output P1dB 2500 13.1 13 5.8 2.1 545 15.2 39.8 2600 13.0 14.5 6.5 1.7 510 16.2 39.0 2700 12.4 20 5 1.4 500 16.8 38.0 MHz dB dB dB % mA % dBm Notes: 1. 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and 30 subchannels.PAR = 10.2dB@ 0.01%, 3.84 MHz Carrier BW 2. W-CDMA 3GPP, TM1+64DPCH, +5MHz Offset, PAR = 10.2 dB @ 0.01%, 3.84MHz BW Performance Plots – AP561-PCB2500 Test conditions unless otherwise noted: VCC = +12 V, VPD = +5 V, ICQ = 300 mA (typ.), Temp=+25°C Gain vs. Frequency 15 Return Loss vs. Frequency 0 40 P1dB (dBm) 12 11 S22 S11 -10 -15 -20 10 9 2.50 2.55 2.60 2.65 -25 2.50 2.70 2.55 2.60 2.65 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability 3.84 MHz BW 20 Efficiency (%) -45 -50 550 10 27 28 W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability 3.84 MHz BW Frequency : 2.6 GHz Temp=+25 C 450 350 2.7 GHz -55 26 2.70 400 0 25 2.65 500 Temp.=+25oC 15 2.60 Collector Current vs. Output Power 600 Frequency : 2.6 GHz 5 2.6 GHz 2.55 Frequency (GHz) Efficiency vs. Output Power 25 Temp.=+25oC -40 2.5 GHz 32 2.50 2.70 Icc (mA) W-CDMA 3GPP Test Model 1+64 DPCH PAR = 10.2dB @ 0.01% Probability 3.84 MHz BW 36 Frequency (GHz) ACLR vs. Output Power vs. Frequency -35 38 34 Frequency (GHz) ACLR (dBc) Temp.=+25oC -5 Return Loss (dB) Gain (dB) 14 13 P1dB vs. Frequency 42 Temp : +25 C Temp : +25 C 29 30 300 25 31 26 27 28 29 30 31 Output Power (dBm) Output Power (dBm) 25 26 27 28 29 30 31 Output Power (dBm) EVM vs. Output Power 3.0 Temp.=+25oC 802.16-2004 O-FDMA, 64QAM-1/2, 1024-FFT, 20 symbols and subchannels. PAR = 10.2dB @ 0.01%, 3.84 MHz Carrier BW 2.5 EVM (%) 2.0 1.5 1.0 0.5 2.5 GHz 2.6 GHz 2.7 GHz 0.0 25 26 27 28 29 30 31 Output Power (dBm) Datasheet: Rev B 09-17-13 © 2013 TriQuint - 11 of 17 - Disclaimer: Subject to change without notice www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Reference Design 2500-2700 MHz: Changing Icq Biasing Configurations The AP561 can be configured to operate with lower bias current by varying the bias-adjust resistor R2. (Error! Not a valid bookmark self-reference.) The recommended circuit configuration has the device operating with a 300 mA as the quiescent current (ICQ). This biasing level represents a tradeoff in terms of EVM and efficiency. Lowering ICQ will improve upon the efficiency of the device, but degrade the EVM performance. Measured data shown in the plots below represents the AP561-PCB2500 measured and configured for 2.6GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. Table 1 : Reduced Current Operation ICQ (mA) 300 280 260 240 220 200 R2 (Ω) 330 336 340 343 348 351 VPD (V) 5 5 5 5 5 5 IREF (V) 2.85 2.81 2.78 2.76 2.73 2.71 EVM vs. Output Average Power vs. Icq 240mA 300mA 3 2 1 0 20 22 24 26 28 Output Power (dBm) 200mA 260mA 25 Efficiency (%) EVM (%) 4 220mA 280mA Freq = 2.6 GHz, T= 25ºC 30 30 32 34 220mA 280mA 240mA 300mA 15 10 0 9 20 22 24 26 28 Output Power (dBm) 30 13 600 12 500 11 200mA 220mA 240mA 260mA 280mA 300mA 32 34 20 200mA 220mA 240mA 260mA 280mA 300mA 22 24 26 28 Output Power (dBm) 30 32 Icc vs. Output Average Power vs. Icq Freq = 2.6 GHz, T= 25ºC 700 Icc (mA) Gain (dB) 11 10 200mA 260mA 220mA 280mA 240mA 300mA 400 300 200 9 2.4 Datasheet: Rev B 09-17-13 © 2013 TriQuint 12 5 Vcc = 12V, T= 25ºC 10 13 20 Power Gain vs.Frequency vs. Icq 14 Freq = 2.6GHz, T= 25ºC 14 Gain (dB) 200mA 260mA Power Gain vs. Output Average Power vs. Icq Efficiency vs. Output Average Power vs Icq Freq = 2.6 GHz, T= 25ºC 5 2.5 2.6 Frequency (GHz) 2.7 2.8 20 - 12 of 17 - 22 24 26 28 Output Power (dBm) 30 32 34 Disclaimer: Subject to change without notice www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Parameter Measurement Information: Switching Speed Test Cable Length = Lx Test Conditions: Pulse Generator -ve Vcc = +12V at 25°C Output Power = +30dBm at 2.5 GHz Rep Rate = 1 KHz, 50% duty cycle Vpd amplitude = +5V R2 = 200Ω, C9 = 12pF (C10, C11 removed for best switching performance) Xtal Detector Voltage =15mV (square law) Oscilloscope +ve Cable Length = Lx Cable Length = Lx CW Signal Source Diode Detector Vpd Attenuator AP56x Evaluation Brd Test Result Waveforms: Vpd = 5V Vpd = 0V RF On Vpd = 5V RF Off Vpd = 5V Delay = 50nS Delay = 50nS RF On Datasheet: Rev B 09-17-13 © 2013 TriQuint - 13 of 17 - Disclaimer: Subject to change without notice www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Evaluation Board Bias Procedure Following bias procedure is recommended to ensure proper functionality of AP561 in a laboratory environment. The sequencing is not required in the final system application. Bias. Voltage (V) VCC +12 VPD +5 Turn-on Sequence: 1. 2. 3. 4. Attach input and output loads onto the evaluation board. Turn on power supply VCC = +12V. Turn on power supply VPD = +5V. Turn on RF power. Turn-off Sequence: 1. Turn off RF power. 2. Turn off power supply VPD = +5V. 3. Turn off power supply VCC = +12V. Datasheet: Rev B 09-17-13 © 2013 TriQuint - 14 of 17 - Disclaimer: Subject to change without notice www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Pin Configuration and Description Pin No. Label Description 1 PIN_VBIAS Voltage supply for active bias for the amp. Connect to same supply voltage as Vcc. 2, 3, 7, 8, 12, 13 N/C No internal connection. This pin can be grounded or N/C on PCB. Land pads should be provided for PCB mounting integrity. 4, 5, 6 RF IN RF Input. DC Voltage present, blocking cap required. Requires matching for operation. 9, 10, 11 RF Output / VCC RF Output. DC Voltage present, blocking cap required 14 PIN_VPD Backside Paddle RF/DC GND Reference current into internal active bias current mirror. Current into PIN_VPD sets device quiescent current. Also, can be used as on/off control. Multiple Vias should be employed to minimize inductance and thermal resistance. Use recommended via pattern shown under mounting configuration and ensure good solder attach for optimum thermal and electrical performance Evaluation Board PCB Information TriQuint PCB 1069110 Material and Stack-up Ultralam 1 oz. Cu top layer 0.0147 ± 0.0015 Finished Board Thickness Ultralam 2000 εr=2.5 typ. 1 oz. Cu bottom layer TriQuint PCB 1080526 Material and Stack-up FR4 1 oz. Cu top layer 0.021 ± 0.002 Finished Board Thickness Nelco N-4000-13 εr=3.7 typ. 1 oz. Cu bottom layer Datasheet: Rev B 09-17-13 © 2013 TriQuint - 15 of 17 - Disclaimer: Subject to change without notice www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Mechanical Information Package Marking and Dimensions Marking: Part number – AP561-F Lot code – XXXX Notes: 1. All dimensions are in millimeters. Angles are in degrees. 2. Except where noted, this part outline conforms to JEDEC standard MO-220, Issue E (Variation VGGC) for thermally enhanced plastic very thin fine pitch quad flat no lead package (QFN). 3. Dimension and tolerance formats conform to ASME Y14.4M-1994. 4. The terminal #1 identifier and terminal numbering conform to JESD 95-1 SPP-012. PCB Mounting Pattern Notes: 1. All dimensions are in millimeters. Angles are in degrees. 2. Use 1 oz. copper minimum for top and bottom layer metal. 3. Vias are required under the backside paddle of this device for proper RF/DC grounding and thermal dissipation. We recommend a 0.35mm (#80/.0135") diameter bit for drilling via holes and a final plated thru diameter of 0.25 mm (0.10”). 4. Ensure good package backside paddle solder attach for reliable operation and best electrical performance. Datasheet: Rev B 09-17-13 © 2013 TriQuint - 16 of 17 - Disclaimer: Subject to change without notice www.triquint.com AP561-F 0.7-2.9 GHz 8W HBT Power Amplifier Product Compliance Information ESD Sensitivity Ratings Solderability Compatible with both lead-free (260 °C max. reflow temperature) and tin/lead (245 °C max. reflow temperature) soldering processes. Caution! ESD-Sensitive Device Contact plating: Annealed Matte Tin over Cu ESD Rating: Value: Test: Standard: Class 1A Passes ≥ 250 V to < 500 V Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class IV Passes 1000 V to <2000 V Charged Device Model (CDM) JEDEC Standard JESD22-C101 RoHs Compliance This part is compliant with EU 2002/95/EC RoHS directive (Restrictions on the Use of Certain Hazardous Substances in Electrical and Electronic Equipment). MSL Rating MSL Rating: Level 3 Test: 260°C convection reflow Standard: JEDEC Standard IPC/JEDEC J-STD-020 This product also has the following attributes: Lead Free Halogen Free (Chlorine, Bromine) Antimony Free TBBP-A (C15H12Br402) Free PFOS Free SVHC Free Contact Information For the latest specifications, additional product information, worldwide sales and distribution locations, and information about TriQuint: Web: www.triquint.com Email: [email protected] Tel: Fax: For technical questions and application information: +1.503.615.9000 +1.503.615.8902 Email: [email protected] Important Notice The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or lifesustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. Datasheet: Rev B 09-17-13 © 2013 TriQuint - 17 of 17 - Disclaimer: Subject to change without notice www.triquint.com