PRELIMINARY DATA SHEET 1GB Unbuffered DDR2 SDRAM DIMM EBE11ED8AGWA (128M words × 72 bits, 2 Ranks) Specifications Features • Density: 1GB • Organization 128M words × 72 bits, 2 ranks • Mounting 18 pieces of 512M bits DDR2 SDRAM sealed in FBGA • Package: 240-pin socket type dual in line memory module (DIMM) PCB height: 30.0mm Lead pitch: 1.0mm Lead-free (RoHS compliant) • Power supply: VDD = 1.8V ± 0.1V • Data rate: 667Mbps/533Mbps (max.) • Four internal banks for concurrent operation (components) • Interface: SSTL_18 • Burst lengths (BL): 4, 8 • /CAS Latency (CL): 3, 4, 5 • Precharge: auto precharge option for each burst access • Refresh: auto-refresh, self-refresh • Refresh cycles: 8192 cycles/64ms Average refresh period 7.8µs at 0°C ≤ TC ≤ +85°C 3.9µs at +85°C < TC ≤ +95°C • Operating case temperature range TC = 0°C to +95°C • Double-data-rate architecture; two data transfers per clock cycle • The high-speed data transfer is realized by the 4 bits prefetch pipelined architecture • Bi-directional differential data strobe (DQS and /DQS) is transmitted/received with data for capturing data at the receiver • DQS is edge-aligned with data for READs; centeraligned with data for WRITEs • Differential clock inputs (CK and /CK) • DLL aligns DQ and DQS transitions with CK transitions • Commands entered on each positive CK edge; data and data mask referenced to both edges of DQS • Data mask (DM) for write data • Posted /CAS by programmable additive latency for better command and data bus efficiency • Off-Chip-Driver Impedance Adjustment and On-DieTermination for better signal quality • /DQS can be disabled for single-ended Data Strobe operation Document No. E0920E10 (Ver. 1.0) Date Published June 2006 (K) Japan Printed in Japan URL: http://www.elpida.com Elpida Memory, Inc. 2006 EBE11ED8AGWA Ordering Information Data rate Mbps (max.) Part number EBE11ED8AGWA-6E-E 667 Component JEDEC speed bin (CL-tRCD-tRP) DDR2-667 (5-5-5) EBE11ED8AGWA-5C-E 533 Contact pad Package EDE5108AGBG-6E-E 240-pin DIMM (lead-free) DDR2-533 (4-4-4) Mounted devices Gold EDE5108AGBG-6E-E EDE5108AGBG-5E-E Pin Configurations Front side 1 pin 121 pin 64 pin 65 pin 120 pin 184 pin 185 pin 240 pin Back side Pin No. Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name 1 VREF 61 A4 121 VSS 181 VDD 2 VSS 62 VDD 122 DQ4 182 A3 3 DQ0 63 A2 123 DQ5 183 A1 4 DQ1 64 VDD 124 VSS 184 VDD 5 VSS 65 VSS 125 DM0 185 CK0 6 /DQS0 66 VSS 126 NC 186 /CK0 7 DQS0 67 VDD 127 VSS 187 VDD 8 VSS 68 NC 128 DQ6 188 A0 9 DQ2 69 VDD 129 DQ7 189 VDD 10 DQ3 70 A10/AP 130 VSS 190 BA1 11 VSS 71 BA0 131 DQ12 191 VDD 12 DQ8 72 VDD 132 DQ13 192 /RAS 13 DQ9 73 /WE 133 VSS 193 /CS0 14 VSS 74 /CAS 134 DM1 194 VDD 15 /DQS1 75 VDD 135 NC 195 ODT0 16 DQS1 76 /CS1 136 VSS 196 A13 17 VSS 77 ODT1 137 CK1 197 VDD 18 NC 78 VDD 138 /CK1 198 VSS 19 NC 79 VSS 139 VSS 199 DQ36 20 VSS 80 DQ32 140 DQ14 200 DQ37 21 DQ10 81 DQ33 141 DQ15 201 VSS 22 DQ11 82 VSS 142 VSS 202 DM4 23 VSS 83 /DQS4 143 DQ20 203 NC 24 DQ16 84 DQS4 144 DQ21 204 VSS 25 DQ17 85 VSS 145 VSS 205 DQ38 26 VSS 86 DQ34 146 DM2 206 DQ39 27 /DQS2 87 DQ35 147 NC 207 VSS 28 DQS2 88 VSS 148 VSS 208 DQ44 Preliminary Data Sheet E0920E10 (Ver. 1.0) 2 EBE11ED8AGWA Pin No. Pin name Pin No. Pin name Pin No. Pin name Pin No. Pin name 29 VSS 89 DQ40 149 DQ22 209 DQ45 30 DQ18 90 DQ41 150 DQ23 210 VSS 31 DQ19 91 VSS 151 VSS 211 DM5 32 VSS 92 /DQS5 152 DQ28 212 NC 33 DQ24 93 DQS5 153 DQ29 213 VSS 34 DQ25 94 VSS 154 VSS 214 DQ46 35 VSS 95 DQ42 155 DM3 215 DQ47 36 /DQS3 96 DQ43 156 NC 216 VSS 37 DQS3 97 VSS 157 VSS 217 DQ52 38 VSS 98 DQ48 158 DQ30 218 DQ53 39 DQ26 99 DQ49 159 DQ31 219 VSS 40 DQ27 100 VSS 160 VSS 220 CK2 41 VSS 101 SA2 161 CB4 221 /CK2 42 CB0 102 NC 162 CB5 222 VSS 43 CB1 103 VSS 163 VSS 223 DM6 44 VSS 104 /DQS6 164 DM8 224 NC 45 /DQS8 105 DQS6 165 NC 225 VSS 46 DQS8 106 VSS 166 VSS 226 DQ54 47 VSS 107 DQ50 167 CB6 227 DQ55 48 CB2 108 DQ51 168 CB7 228 VSS 49 CB3 109 VSS 169 VSS 229 DQ60 50 VSS 110 DQ56 170 VDD 230 DQ61 51 VDD 111 DQ57 171 CKE1 231 VSS 52 CKE0 112 VSS 172 VDD 232 DM7 53 VDD 113 /DQS7 173 NC 233 NC 54 NC 114 DQS7 174 NC 234 VSS 55 NC 115 VSS 175 VDD 235 DQ62 56 VDD 116 DQ58 176 A12 236 DQ63 57 A11 117 DQ59 177 A9 237 VSS 58 A7 118 VSS 178 VDD 238 VDDSPD 59 VDD 119 SDA 179 A8 239 SA0 60 A5 120 SCL 180 A6 240 SA1 Preliminary Data Sheet E0920E10 (Ver. 1.0) 3 EBE11ED8AGWA Pin Description Pin name Function A0 to A13 Address input Row address Column address A10 (AP) Auto precharge BA0, BA1 Bank select address DQ0 to DQ63 Data input/output CB0 to CB7 Check bit (Data input/output) /RAS Row address strobe command /CAS Column address strobe command /WE Write enable /CS0, /CS1 Chip select CKE0, CKE1 Clock enable CK0 to CK2 Clock input A0 to A13 A0 to A9 /CK0 to /CK2 Differential clock input DQS0 to DQS8, /DQS0 to /DQS8 Input and output data strobe DM0 to DM8 Input mask SCL Clock input for serial PD SDA Data input/output for serial PD SA0 to SA2 Serial address input VDD Power for internal circuit VDDSPD Power for serial EEPROM VREF Input reference voltage VSS Ground ODT0, ODT1 ODT control NC No connection Preliminary Data Sheet E0920E10 (Ver. 1.0) 4 EBE11ED8AGWA Serial PD Matrix Byte No. 0 1 Function described Number of bytes utilized by module manufacturer Total number of bytes in serial PD device Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 1 0 0 0 0 0 0 0 80H 128 bytes 0 0 0 0 1 0 0 0 08H 256 bytes 2 Memory type 0 0 0 0 1 0 0 0 08H DDR2 SDRAM 3 Number of row address 0 0 0 0 1 1 1 0 0EH 14 4 Number of column address 0 0 0 0 1 0 1 0 0AH 10 5 Number of DIMM ranks 0 1 1 0 0 0 0 1 61H 2 6 Module data width 0 1 0 0 1 0 0 0 48H 72 Module data width continuation 0 0 0 0 0 0 0 0 00H 0 0 0 0 0 0 1 0 1 05H SSTL 1.8V 0 0 1 1 0 0 0 0 30H 3.0ns* 0 0 1 1 1 1 0 1 3DH 3.75ns* 1 0 1 0 0 0 1 0 1 45H 0.45ns* 1 0 1 0 1 0 0 0 0 50H 0.5ns* 0 0 0 0 0 0 1 0 02H ECC 7 8 9 Voltage interface level of this assembly DDR SDRAM cycle time, CL = 5 -6E -5C 10 SDRAM access from clock (tAC) -6E -5C 11 DIMM configuration type 12 Refresh rate/type 1 0 0 0 0 0 1 0 82H 7.8µs 13 Primary SDRAM width 0 0 0 0 1 0 0 0 08H ×8 14 Error checking SDRAM width 0 0 0 0 1 0 0 0 08H ×8 15 Reserved 0 0 0 0 0 0 0 0 00H 0 0 0 0 1 1 0 0 0CH 4,8 0 0 0 0 1 0 0 04H 4 0 1 1 1 0 0 0 38H 3, 4, 5 16 17 18 SDRAM device attributes: 0 Burst length supported SDRAM device attributes: Number of 0 banks on SDRAM device SDRAM device attributes: 0 /CAS latency 1 1 19 DIMM Mechanical Characteristics 0 0 0 0 0 0 0 1 01H 4.00mm max. 20 DIMM type information 0 0 0 0 0 0 1 0 02H Unbuffered 21 SDRAM module attributes 0 0 0 0 0 0 0 0 00H Normal 22 SDRAM device attributes: General 0 0 0 0 0 0 1 1 03H Weak Driver 50Ω ODT Support 0 0 1 1 1 1 0 1 3DH 3.75ns* 0 1 0 1 0 0 0 0 50H 0.5ns* 1 23 24 Minimum clock cycle time at CL = 4 -6E, -5C Maximum data access time (tAC) from clock at CL = 4 -6E, -5C 25 Minimum clock cycle time at CL = 3 0 1 0 1 0 0 0 0 50H 5.0ns* 1 26 Maximum data access time (tAC) from clock at CL = 3 0 1 1 0 0 0 0 0 60H 0.6ns* 1 27 Minimum row precharge time (tRP) 0 0 1 1 1 1 0 0 3CH 15ns 28 Minimum row active to row active delay (tRRD) 0 0 0 1 1 1 1 0 1EH 7.5ns Preliminary Data Sheet E0920E10 (Ver. 1.0) 5 1 EBE11ED8AGWA Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 29 Minimum /RAS to /CAS delay (tRCD) 0 0 1 1 1 1 0 0 3CH 15ns 30 Minimum active to precharge time (tRAS) -6E, -5C 0 0 1 0 1 1 0 1 2DH 45ns 31 Module rank density 1 0 0 0 0 0 0 0 80H 512M bytes 32 Address and command setup time before clock (tIS) -6E 0 0 1 0 0 0 0 0 20H 0.20ns* 1 0 0 1 0 0 1 0 1 25H 0.25ns* 1 0 0 1 0 0 1 1 1 27H 0.27ns* 1 0 0 1 1 0 1 1 1 37H 0.37ns* 1 0 0 1 0 0 0 0 10H 0.10ns* 1 0 0 1 0 1 1 1 17H 0.17ns* 1 0 1 0 0 0 1 0 22H 0.22ns* 1 -5C 33 Address and command hold time after clock (tIH) -6E -5C 34 35 Data input setup time before clock (tDS) 0 -6E, -5C Data input hold time after clock (tDH) 0 -6E -5C 36 37 38 39 40 41 42 Write recovery time (tWR) 0 0 0 1 1 1 1 0 0 3CH 15ns* 0 0 1 1 1 1 0 1EH 7.5ns* 1 0 0 1 1 1 1 0 1EH 7.5ns* 1 0 0 0 0 0 0 0 00H TBD 0 0 0 0 0 0 0 0 00H Undefined 0 0 1 1 1 1 0 0 3CH 60ns* 0 1 1 0 1 0 0 1 69H 105ns* Internal write to read command delay (tWTR) 0 -6E, -5C Internal read to precharge command 0 delay (tRTP) Memory analysis probe 0 characteristics Extension of Byte 41 and 42 Active command period (tRC) -6E, -5C Auto refresh to active/ Auto refresh command cycle (tRFC) 1 1 1 1 43 SDRAM tCK cycle max. (tCK max.) 1 0 0 0 0 0 0 0 80H 8ns* 44 Dout to DQS skew -6E 0 0 0 1 1 0 0 0 18H 0.24ns* 1 0 0 0 1 1 1 1 0 1EH 0.30ns* 1 0 0 1 0 0 0 1 0 22H 0.34ns* 1 0 0 1 0 1 0 0 0 28H 0.40ns* 1 0 0 0 0 0 0 0 0 00H Undefined 0 0 0 0 0 0 0 0 00H -5C 45 Data hold skew (tQHS) -6E -5C 46 PLL relock time 47 to 61 Preliminary Data Sheet E0920E10 (Ver. 1.0) 6 EBE11ED8AGWA Byte No. Function described Bit7 Bit6 Bit5 Bit4 Bit3 Bit2 Bit1 Bit0 Hex value Comments 62 SPD Revision 0 0 0 1 0 0 1 0 12H 63 Checksum for bytes 0 to 62 -6E 1 0 0 0 0 1 0 0 84H 1 1 0 0 1 0 0 0 C8H -5C Rev. 1.2 64 to 65 Manufacturer’s JEDEC ID code 0 1 1 1 1 1 1 1 7FH Continuation code 66 Manufacturer’s JEDEC ID code 1 1 1 1 1 1 1 0 FEH Elpida Memory 67 to 71 Manufacturer’s JEDEC ID code 0 0 0 0 0 0 0 0 00H 72 Manufacturing location 73 Module part number 0 1 0 0 0 1 0 1 45H (ASCII-8bit code) E 74 Module part number 0 1 0 0 0 0 1 0 42H B 75 Module part number 0 1 0 0 0 1 0 1 45H E 76 Module part number 0 0 1 1 0 0 0 1 31H 1 77 Module part number 0 0 1 1 0 0 0 1 31H 1 78 Module part number 0 1 0 0 0 1 0 1 45H E 79 Module part number 0 1 0 0 0 1 0 0 44H D 80 Module part number 0 0 1 1 1 0 0 0 38H 8 81 Module part number 0 1 0 0 0 0 0 1 41H A 82 Module part number 0 1 0 0 0 1 1 1 47H G 83 Module part number 0 1 0 1 0 1 1 1 57H W 84 Module part number 0 1 0 0 0 0 0 1 41H A 85 Module part number 0 0 1 0 1 1 0 1 2DH — 86 Module part number -6E 0 0 1 1 0 1 1 0 36H 6 0 0 1 1 0 1 0 1 35H 5 0 1 0 0 0 1 0 1 45H E 0 1 0 0 0 0 1 1 43H C 0 0 1 0 1 1 0 1 2DH — -5C 87 Module part number -6E -5C 88 Module part number 89 Module part number 0 1 0 0 0 1 0 1 45H E 90 Module part number 0 0 1 0 0 0 0 0 20H (Space) 91 Revision code 0 0 1 1 0 0 0 0 30H Initial 92 Revision code 0 0 1 0 0 0 0 0 20H (Space) 93 Manufacturing date Year code (BCD) 94 Manufacturing date Week code (BCD) 95 to 98 Module serial number 99 to 127 Manufacture specific data Note 1: These specifications are defined based on component specification, not module. Preliminary Data Sheet E0920E10 (Ver. 1.0) 7 EBE11ED8AGWA Block Diagram /CS1 /CS0 /DQS0 DQS0 DM0 RS1 RS1 DQ0 to DQ7 DQS1 DM1 DQ0 to DQ7 D0 RS1 RS1 DQ0 to DQ7 D1 DM3 /RAS /CAS /WE 8 D11 RS2 8 D12 RS1 DQ0 to DQ7 DQ56 to DQ63 A0 to A13: SDRAMs (D0 to D17) RS2 /DQS8 RS1 DQS8 RS1 DM8 RS1 /RAS: SDRAMs (D0 to D17) RS2 D6 DQ0 to DQ7 DM /CS DQS /DQS DM /CS DQS /DQS BA0 to BA1: SDRAMs (D0 to D17) RS2 DQ0 to DQ7 DM /CS DQS /DQS D15 RS1 DM7 DQ0 to DQ7 D14 RS1 DQS7 RS1 D3 DQ0 to DQ7 D5 RS1 /DQS7 DQ0 to DQ7 RS1 DQ48 to DQ55 RS1 RS1 DQ0 to DQ7 DM /CS DQS /DQS RS1 8 DM /CS DQS /DQS RS1 DM /CS DQS /DQS DQ0 to DQ7 DM /CS DQS /DQS RS1 DM6 D2 D13 RS1 DQS6 DQ0 to DQ7 RS1 DQ40 to DQ47 RS1 DQ24 to DQ31 A0 to A13 D10 DQ0 to DQ7 RS1 /DQS6 DM /CS DQS /DQS BA0 to BA1 DQ0 to DQ7 D4 RS1 8 RS1 RS1 DQ0 to DQ7 DM /CS DQS /DQS RS1 8 RS1 DM /CS DQS /DQS RS1 DM5 DQ16 to DQ23 DQS3 8 DQ32 to DQ39 DQS5 DM /CS DQS /DQS /DQS3 D9 /DQS5 DQ8 to DQ15 DM2 DQ0 to DQ7 RS1 8 DQS2 DM /CS DQS /DQS DM /CS DQS /DQS RS1 DM /CS DQS /DQS /DQS2 RS1 DM4 DM /CS DQS /DQS /DQS1 RS1 DQS4 RS1 8 RS1 /DQS4 RS1 DM /CS DQS /DQS D7 DM /CS DQS /DQS DQ0 to DQ7 D16 DM /CS DQS /DQS /CAS: SDRAMs (D0 to D17) RS2 8 /WE: SDRAMs (D0 to D17) CKE0 RS1 DQ0 to DQ7 CB0 to CB7 CKE: SDRAMs (D0 to D8) CKE1 CKE: SDRAMs (D9 to D17) ODT0 ODT1 ODT:SDRAMs (D0 to D8) ODT:SDRAMs (D9 to D17) D8 DQ0 to DQ7 D17 Serial PD VDDSPD VREF VDD VSS SPD SCL SCL SA0 A0 SA1 A1 SA2 A2 SDA SDA SDRAMs (D0 to D17) SDRAMs (D0 to D17) SDRAMs (D0 to D17) U0 WP * D0 to D17 : 512M bits DDR2 SDRAM U0 : 2k bits EEPROM Notes : Rs1 : 22Ω 1. DQ wiring may be changed within a byte. Rs2 : 7.5Ω 2. DQ, DQS, /DQS, ODT, DM, CKE, /CS relationships must be meintained as shown. 3. Refer to the appropriate clock wiring topology under the DIMM wiring details section of this document. Preliminary Data Sheet E0920E10 (Ver. 1.0) 8 EBE11ED8AGWA Logical Clock Net Structure 6DRAM loads R = 200Ω DRAM DRAM DRAM DIMM connector R = 200Ω DRAM DRAM DRAM R = 200Ω Preliminary Data Sheet E0920E10 (Ver. 1.0) 9 EBE11ED8AGWA Electrical Specifications • All voltages are referenced to VSS (GND). Absolute Maximum Ratings Parameter Symbol Value Unit Notes 1 Voltage on any pin relative to VSS VT –0.5 to +2.3 V Supply voltage relative to VSS VDD –0.5 to +2.3 V Short circuit output current IOS 50 mA 1 Power dissipation PD 8 W Operating case temperature TC 0 to +95 °C 1, 2 Storage temperature Tstg –55 to +100 °C 1 Notes: 1. DDR2 SDRAM component specification. 2. Supporting 0°C to +85°C and being able to extend to +95°C with doubling auto-refresh commands in frequency to a 32ms period (tREFI = 3.9µs) and higher temperature self-refresh entry via the control of EMRS (2) bit A7 is required. Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause permanent damage. The device is not meant to be operated under conditions outside the limits described in the operational section of this specification Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC Operating Conditions (TC = 0°C to +85°C) (DDR2 SDRAM Component Specification) Parameter Symbol min. typ. max. Unit Notes Supply voltage VDD, VDDQ 1.7 1.8 1.9 V 4 VSS 0 0 0 V VDDSPD 1.7 — 3.6 V Input reference voltage VREF 0.49 × VDDQ 0.50 × VDDQ 0.51 × VDDQ V 1, 2 Termination voltage VTT VREF − 0.04 VREF VREF + 0.04 V 3 DC input logic high VIH (DC) VREF + 0.125 VDDQ + 0.3 V DC input low VIL (DC) −0.3 VREF – 0.125 V AC input logic high -6E VIH (AC) VREF + 0.200 V VIH (AC) VREF + 0.250 V VIL (AC) VREF – 0.200 V VIL (AC) VREF − 0.250 V -5C AC input low -6E -5C Notes: 1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 × VDDQ of the transmitting device and VREF are expected to track variations in VDDQ. 2. Peak to peak AC noise on VREF may not exceed ±2% VREF (DC). 3. VTT of transmitting device must track VREF of receiving device. 4. VDDQ must be equal to VDD . Preliminary Data Sheet E0920E10 (Ver. 1.0) 10 EBE11ED8AGWA DC Characteristics 1 (TC = 0°C to +85°C, VDD = 1.8V ± 0.1V, VSS = 0V) Parameter Symbol Grade max. Unit -6E -5C 1125 1080 mA -6E -5C 1665 1575 mA Operating current IDD1 (ACT-READ-PRE) (Another rank is in IDD2P) -6E -5C 1260 1215 mA Operating current IDD1 (ACT-READ-PRE) (Another rank is in IDD3N) -6E -5C 1800 1710 mA Precharge power-down standby current IDD2P -6E -5C 180 180 mA Precharge quiet standby current IDD2Q -6E -5C 450 450 mA Idle standby current IDD2N -6E -5C 630 540 mA IDD3P-F -6E -5C 720 720 mA IDD3P-S -6E -5C 450 450 mA IDD3N -6E -5C 1260 1170 mA IDD4R -6E -5C 2160 1800 mA IDD4R -6E -5C 2700 2295 mA IDD4W -6E -5C 2070 1800 mA IDD4W -6E -5C 2610 2295 mA Auto-refresh current IDD5 (Another rank is in IDD2P) -6E -5C 2520 2340 mA Auto-refresh current IDD5 (Another rank is in IDD3N) -6E -5C 3060 2835 mA Operating current IDD0 (ACT-PRE) (Another rank is in IDD2P) Operating current IDD0 (ACT-PRE) (Another rank is in IDD3N) Active power-down standby current Active standby current Operating current (Burst read operating) (Another rank is in IDD2P) Operating current (Burst read operating) (Another rank is in IDD3N) Operating current (Burst write operating) (Another rank is in IDD2P) Operating current (Burst write operating) (Another rank is in IDD3N) Preliminary Data Sheet E0920E10 (Ver. 1.0) 11 Test condition one bank; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS min.(IDD); CKE is H, /CS is H between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING one bank; IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK (IDD), tRC = tRC (IDD), tRAS = tRAS min.(IDD); tRCD = tRCD (IDD); CKE is H, /CS is H between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W all banks idle; tCK = tCK (IDD); CKE is L; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING all banks idle; tCK = tCK (IDD); CKE is H, /CS is H; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING all banks idle; tCK = tCK (IDD); CKE is H, /CS is H; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING all banks open; tCK = tCK (IDD); CKE is L; Other control and address bus inputs are STABLE; Data bus inputs are FLOATING Fast PDN Exit MRS(12) = 0 Slow PDN Exit MRS(12) = 1 all banks open; tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD); CKE is H, /CS is H between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING all banks open, continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD); CKE is H, /CS is H between valid commands; Address bus inputs are SWITCHING; Data pattern is same as IDD4W all banks open, continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK (IDD), tRAS = tRAS max.(IDD), tRP = tRP (IDD); CKE is H, /CS is H between valid commands; Address bus inputs are SWITCHING; Data bus inputs are SWITCHING tCK = tCK (IDD); Refresh command at every tRFC (IDD) interval; CKE is H, /CS is H between valid commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING EBE11ED8AGWA Parameter Self-refresh current Symbol Grade IDD6 max. Unit 108 mA Operating current IDD7 (Bank interleaving) (Another rank is in IDD2P) -6E -5C 2970 2970 mA Operating current IDD7 (Bank interleaving) (Another rank is in IDD3N) -6E -5C 3510 3465 mA Test condition Self Refresh Mode; CK and /CK at 0V; CKE ≤ 0.2V; Other control and address bus inputs are FLOATING; Data bus inputs are FLOATING all bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD (IDD) −1 × tCK (IDD); tCK = tCK (IDD), tRC = tRC (IDD), tRRD = tRRD(IDD), tRCD = 1 × tCK (IDD); CKE is H, CS is H between valid commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4W; Notes: 1. 2. 3. 4. IDD specifications are tested after the device is properly initialized. Input slew rate is specified by AC Input Test Condition. IDD parameters are specified with ODT disabled. Data bus consists of DQ, DM, DQS, /DQS, RDQS, /RDQS, LDQS, /LDQS, UDQS, and /UDQS. IDD values must be met with all combinations of EMRS bits 10 and 11. 5. Definitions for IDD L is defined as VIN ≤ VIL (AC) (max.) H is defined as VIN ≥ VIH (AC) (min.) STABLE is defined as inputs stable at an H or L level FLOATING is defined as inputs at VREF = VDDQ/2 SWITCHING is defined as: inputs changing between H and L every other clock cycle (once per two clocks) for address and control signals, and inputs changing between H and L every other data transfer (once per clock) for DQ signals not including masks or strobes. 6. Refer to AC Timing for IDD Test Conditions. AC Timing for IDD Test Conditions For purposes of IDD testing, the following parameters are to be utilized. DDR2-667 DDR2-533 Parameter 5-5-5 4-4-4 Unit CL(IDD) 5 4 tCK tRCD(IDD) 15 15 ns tRC(IDD) 60 60 ns tRRD(IDD) 7.5 7.5 ns tCK(IDD) 3 3.75 ns tRAS(min.)(IDD) 45 45 ns tRAS(max.)(IDD) 70000 70000 ns tRP(IDD) 15 15 ns tRFC(IDD) 105 105 ns Preliminary Data Sheet E0920E10 (Ver. 1.0) 12 EBE11ED8AGWA DC Characteristics 2 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) (DDR2 SDRAM Component Specification) Parameter Symbol Value Input leakage current ILI 2 µA VDD ≥ VIN ≥ VSS Output leakage current ILO 5 µA VDDQ ≥ VOUT ≥ VSS VTT + 0.603 V 5 VTT – 0.603 V 5 Minimum required output pull-up under AC VOH test load Maximum required output pull-down under VOL AC test load Unit Notes Output timing measurement reference level VOTR 0.5 × VDDQ V 1 Output minimum sink DC current IOL +13.4 mA 3, 4, 5 Output minimum source DC current IOH -13.4 mA 2, 4, 5 Notes: 1. 2. 3. 4. 5. The VDDQ of the device under test is referenced. VDDQ = 1.7V; VOUT = 1.42V. VDDQ = 1.7V; VOUT = 0.28V. The DC value of VREF applied to the receiving device is expected to be set to VTT. After OCD calibration to 18Ω at TA = 25°C, VDD = VDDQ = 1.8V. DC Characteristics 3 (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) (DDR2 SDRAM Component Specification) Parameter Symbol min. max. Unit Notes AC differential input voltage VID (AC) 0.5 VDDQ + 0.6 V 1, 2 AC differential cross point voltage VIX (AC) 0.5 × VDDQ − 0.175 0.5 × VDDQ + 0.175 V 2 AC differential cross point voltage VOX (AC) 0.5 × VDDQ − 0.125 0.5 × VDDQ + 0.125 V 3 Notes: 1. VID(AC) specifies the input differential voltage |VTR -VCP| required for switching, where VTR is the true input signal (such as CK, DQS, LDQS or UDQS) and VCP is the complementary input signal (such as /CK, /DQS, /LDQS or /UDQS). The minimum value is equal to VIH(AC) − VIL(AC). 2. The typical value of VIX(AC) is expected to be about 0.5 × VDDQ of the transmitting device and VIX(AC) is expected to track variations in VDDQ . VIX(AC) indicates the voltage at which differential input signals must cross. 3. The typical value of VOX(AC) is expected to be about 0.5 × VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ . VOX(AC) indicates the voltage at which differential output signals must cross. VDDQ VTR Crossing point VID VIX or VOX VCP VSSQ Differential Signal Levels*1, 2 Preliminary Data Sheet E0920E10 (Ver. 1.0) 13 EBE11ED8AGWA ODT DC Electrical Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) (DDR2 SDRAM Component Specification) Parameter Symbol min. typ. max. Unit Note Rtt effective impedance value for EMRS (A6, A2) = 0, 1; 75 Ω Rtt1(eff) 60 75 90 Ω 1 Rtt effective impedance value for EMRS (A6, A2) = 1, 0; 150 Ω Rtt2(eff) 120 150 180 Ω 1 Rtt effective impedance value for EMRS (A6, A2) = 1, 1; 50 Ω Rtt3(eff) 40 50 60 Ω 1 Deviation of VM with respect to VDDQ/2 ∆VM −6 +6 % 1 Note: 1. Test condition for Rtt measurements. Measurement Definition for Rtt(eff) Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH(AC)) and I(VIL(AC)) respectively. VIH(AC), and VDDQ values defined in SSTL_18. Rtt(eff) = VIH(AC) − VIL(AC) I(VIH(AC)) − I(VIL(AC)) Measurement Definition for ∆VM Measure voltage (VM) at test pin (midpoint) with no load. ∆VM = 2 × VM VDDQ − 1 × 100% OCD Default Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V) (DDR2 SDRAM Component Specification) Parameter min. typ. max. Unit Notes Output impedance 12.6 18 23.4 Ω 1 Pull-up and pull-down mismatch 0 4 Ω 1, 2 Output slew rate 1.5 5 V/ns 3, 4 Notes: 1. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT−VDDQ)/IOH must be less than 23.4Ω for values of VOUT between VDDQ and VDDQ−280mV. Impedance measurement condition for output sink DC current: VDDQ = 1.7V; VOUT = 280mV; VOUT/IOL must be less than 23.4Ω for values of VOUT between 0V and 280mV. 2. Mismatch is absolute value between pull up and pull down, both are measured at same temperature and voltage. 3. Slew rate measured from VIL(AC) to VIH(AC). 4. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is guaranteed by design and characterization. Preliminary Data Sheet E0920E10 (Ver. 1.0) 14 EBE11ED8AGWA Pin Capacitance (TA = 25°C, VDD = 1.8V ± 0.1V) (DDR2 SDRAM Component Specification) Parameter Symbol Pins min. max. Unit Notes Input capacitance CI1 Address, /RAS, /CAS, /WE, /CS, CKE, ODT 1.0 2.0 pF 1 Input capacitance CI2 CK, /CK 1.0 2.0 pF 1 Data and DQS input/output capacitance -6E CO DQ, DQS, /DQS, DM, CB 2.5 3.5 pF 2 2.5 4.0 pF 2 -5C Notes: 1. Matching within 0.25pF. 2. Matching within 0.50pF. Preliminary Data Sheet E0920E10 (Ver. 1.0) 15 EBE11ED8AGWA AC Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V, VSS, VSSQ = 0V) [DDR2 667] (DDR2 SDRAM Component Specification) -6E Frequency (Mbps) Parameter 667 Symbol min. max. Unit Notes /CAS latency CL 5 5 tCK Active to read or write command delay tRCD 15 ns Precharge command period tRP 15 ns Active to active/auto refresh command time tRC 60 ns DQ output access time from CK, /CK tAC −450 +450 ps DQS output access time from CK, /CK tDQSCK −400 +400 ps CK high-level width tCH 0.45 0.55 tCK CK low-level width tCL 0.45 0.55 tCK CK half period tHP min. (tCL, tCH) ps Clock cycle time tCK 3000 8000 ps DQ and DM input hold time tDH (base) 175 ps 5 DQ and DM input setup time tDS (base) 100 ps 4 Control and Address input pulse width for each input tIPW 0.6 tCK DQ and DM input pulse width for each input tDIPW 0.35 tCK Data-out high-impedance time from CK,/CK tHZ tAC max. ps Data-out low-impedance time from CK,/CK tLZ tAC min. tAC max. ps DQS-DQ skew for DQS and associated DQ signals tDQSQ 240 ps DQ hold skew factor tQHS 340 ps DQ/DQS output hold time from DQS tQH tHP – tQHS ps DQS latching rising transitions to associated clock edges tDQSS −0.25 +0.25 tCK DQS input high pulse width tDQSH 0.35 tCK DQS input low pulse width tDQSL 0.35 tCK DQS falling edge to CK setup time tDSS 0.2 tCK DQS falling edge hold time from CK tDSH 0.2 tCK Mode register set command cycle time tMRD 2 tCK Write postamble tWPST 0.4 0.6 tCK Write preamble tWPRE 0.35 tCK Address and control input hold time tIH (base) 275 ps 5 Address and control input setup time tIS (base) 200 ps 4 Read preamble tRPRE 0.9 1.1 tCK Read postamble tRPST 0.4 0.6 tCK Active to precharge command tRAS 45 70000 ns Active to auto-precharge delay tRAP tRCD min. ns Active bank A to active bank B command period tRRD 7.5 ns Write recovery time tWR 15 ns Auto precharge write recovery + precharge time tDAL (tWR/tCK)+ (tRP/tCK) tCK Internal write to read command delay tWTR 7.5 ns Internal read to precharge command delay tRTP 7.5 ns Preliminary Data Sheet E0920E10 (Ver. 1.0) 16 1 EBE11ED8AGWA -6E Frequency (Mbps) Parameter 667 Symbol min. max. Unit Notes Exit self-refresh to a non-read command tXSNR tRFC + 10 ns Exit self-refresh to a read command tXSRD 200 tCK Exit precharge power-down to any non-read command tXP 2 tCK Exit active power-down to read command tXARD 2 tCK 3 Exit active power-down to read command (slow exit/low power mode) tXARDS 7 − AL tCK 2, 3 CKE minimum pulse width (high and low pulse width) tCKE 3 tCK Output impedance test driver delay tOIT 0 12 ns MRS command to ODT update delay tMOD 0 12 ns Auto refresh to active/auto refresh command time tRFC 105 ns Average periodic refresh interval (0°C ≤ TC ≤ +85°C) tREFI 7.8 µs tREFI 3.9 µs tDELAY tIS + tCK + tIH ns (+85°C < TC ≤ +95°C) Minimum time clocks remains ON after CKE asynchronously drops low Preliminary Data Sheet E0920E10 (Ver. 1.0) 17 EBE11ED8AGWA AC Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V, VSS, VSSQ = 0V) [DDR2 533] (DDR2 SDRAM Component Specification) -5C Frequency (Mbps) Parameter 533 Symbol min. max. Unit Notes /CAS latency CL 4 5 tCK Active to read or write command delay tRCD 15 ns Precharge command period tRP 15 ns Active to active/auto refresh command time tRC 60 ns DQ output access time from CK, /CK tAC −500 +500 ps DQS output access time from CK, /CK tDQSCK −450 +450 ps CK high-level width tCH 0.45 0.55 tCK CK low-level width tCL 0.45 0.55 tCK CK half period tHP min. (tCL, tCH) ps Clock cycle time tCK 3750 8000 ps tDH (base) 225 ps tDH1 (base) –25 ps tDS (base) 100 ps tDS1 (base) –25 ps Control and Address input pulse width for each input tIPW 0.6 tCK DQ and DM input pulse width for each input tDIPW 0.35 tCK Data-out high-impedance time from CK,/CK tHZ tAC max. ps Data-out low-impedance time from CK,/CK tLZ tAC min. tAC max. ps DQS-DQ skew for DQS and associated DQ signals tDQSQ 300 ps DQ hold skew factor tQHS 400 ps DQ/DQS output hold time from DQS tQH tHP – tQHS ps DQS latching rising transitions to associated clock edges tDQSS −0.25 +0.25 tCK DQS input high pulse width tDQSH 0.35 tCK DQS input low pulse width tDQSL 0.35 tCK DQS falling edge to CK setup time tDSS 0.2 tCK DQS falling edge hold time from CK tDSH 0.2 tCK Mode register set command cycle time tMRD 2 tCK Write postamble tWPST 0.4 0.6 tCK Write preamble tWPRE 0.35 tCK Address and control input hold time tIH (base) 375 ps 5 Address and control input setup time tIS (base) 250 ps 4 Read preamble tRPRE 0.9 1.1 tCK Read postamble tRPST 0.4 0.6 tCK Active to precharge command tRAS 45 70000 ns Active to auto-precharge delay tRAP tRCD min. ns Active bank A to active bank B command period tRRD 7.5 ns DQ and DM input hold time (differential strobe) DQ and DM input hold time (single-ended strobe) DQ and DM input setup time (differential strobe) DQ and DM input setup time (single-ended strobe) Preliminary Data Sheet E0920E10 (Ver. 1.0) 18 5 4 EBE11ED8AGWA -5C Frequency (Mbps) 533 Parameter Symbol min. max. Unit Write recovery time tWR 15 ns Auto precharge write recovery + precharge time tDAL (tWR/tCK)+ (tRP/tCK) tCK Internal write to read command delay tWTR 7.5 ns Internal read to precharge command delay tRTP 7.5 ns Exit self-refresh to a non-read command tXSNR tRFC + 10 ns Exit self-refresh to a read command tXSRD 200 tCK Exit precharge power-down to any non-read command tXP 2 tCK Exit active power-down to read command tXARD 2 tCK 3 Exit active power-down to read command (slow exit/low power mode) tXARDS 6 − AL tCK 2, 3 CKE minimum pulse width (high and low pulse width) tCKE 3 tCK Output impedance test driver delay tOIT 0 12 ns MRS command to ODT update delay tMOD 0 12 ns Auto refresh to active/auto refresh command time tRFC 105 ns Average periodic refresh interval (0°C ≤ TC ≤ +85°C) tREFI 7.8 µs tREFI 3.9 µs tDELAY tIS + tCK + tIH (+85°C < TC ≤ +95°C) Minimum time clocks remains ON after CKE asynchronously drops low Notes 1 ns Notes: 1. 2. 3. 4. For each of the terms above, if not already an integer, round to the next higher integer. AL: Additive Latency. MRS A12 bit defines which active power down exit timing to be applied. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the device under test. 5. The figures of Input Waveform Timing 1 and 2 are referenced from the input signal crossing at the VIH(DC) level for a rising signal and VIL(DC) for a falling signal applied to the device under test. DQS CK /DQS /CK tDS tDH tDS tIS tDH tIH tIS tIH VDDQ VIH (AC)(min.) VIH (DC)(min.) VREF VIL (DC)(max.) VIL (AC)(max.) VSS VDDQ VIH (AC)(min.) VIH (DC)(min.) VREF VIL (DC)(max.) VIL (AC)(max.) VSS Input Waveform Timing 1 (tDS, tDH) Input Waveform Timing 2 (tIS, tIH) Preliminary Data Sheet E0920E10 (Ver. 1.0) 19 EBE11ED8AGWA ODT AC Electrical Characteristics (DDR2 SDRAM Component Specification) Parameter Symbol min. max. Unit ODT turn-on delay tAOND 2 2 tCK ODT turn-on -6E tAON tAC(min) tAC(max) + 700 ps 1 1 tAON tAC(min) tAC(max) + 1000 ps ODT turn-on (power down mode) tAONPD tAC(min) + 2000 2tCK + tAC(max) + 1000 ps ODT turn-off delay tAOFD 2.5 2.5 tCK ODT turn-off tAOF tAC(min) tAC(max) + 600 ps ODT turn-off (power down mode) tAOFPD tAC(min) + 2000 2.5tCK + tAC(max) + 1000 ps -5C ODT to power down entry latency tANPD 3 3 tCK ODT power down exit latency tAXPD 8 8 tCK Notes 2 Notes: 1. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resistance is fully on. Both are measured from tAOND. 2. ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are measured from tAOFD. AC Input Test Conditions Parameter Symbol Value Unit Notes Input reference voltage VREF 0.5 × VDDQ V 1 Input signal maximum peak to peak swing VSWING(max.) 1.0 V 1 Input signal maximum slew rate SLEW 1.0 V/ns 2, 3 Notes: 1. Input waveform timing is referenced to the input signal crossing through the VREF level applied to the device under test. 2. The input signal minimum slew rate is to be maintained over the range from VIL(DC) (max.) to VIH(AC) (min.) for rising edges and the range from VIH(DC) (min.) to VIL(AC) (max.) for falling edges as shown in the below figure. 3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive transitions and VIH(AC) to VIL(AC) on the negative transitions. Start of rising edge input timing Start of falling edge input timing VDDQ VIH (AC)(min.) VIH (DC)(min.) VSWING(max.) VREF VIL (DC)(max.) VIL (AC)(max.) Falling slew = VSS ∆TR ∆TF VIH (DC)(min.) − VIL (AC)(max.) Rising slew = ∆TF VIH (AC) min. − VIL (DC)(max.) AC Input Test Signal Wave forms Measurement point DQ VTT RT =25 Ω Output Load Preliminary Data Sheet E0920E10 (Ver. 1.0) 20 ∆TR EBE11ED8AGWA Pin Functions CK, /CK (input pin) The CK and the /CK are the master clock inputs. All inputs except DMs, DQSs and DQs are referred to the cross point of the CK rising edge and the VREF level. When a read operation, DQSs and DQs are referred to the cross point of the CK and the /CK. When a write operation, DMs and DQs are referred to the cross point of the DQS and the VREF level. DQSs for write operation are referred to the cross point of the CK and the /CK. /CS (input pin) When /CS is low, commands and data can be input. When /CS is high, all inputs are ignored. However, internal operations (bank active, burst operations, etc.) are held. /RAS, /CAS, and /WE (input pins) These pins define operating commands (read, write, etc.) depending on the combinations of their voltage levels. See "Command operation". A0 to A13 (input pins) Row address (AX0 to AX13) is determined by the A0 to the A13 level at the cross point of the CK rising edge and the VREF level in a bank active command cycle. Column address (AY0 to AY9) is loaded via the A0 to the A9 at the cross point of the CK rising edge and the VREF level in a read or a write command cycle. This column address becomes the starting address of a burst operation. A10 (AP) (input pin) A10 defines the precharge mode when a precharge command, a read command or a write command is issued. If A10 = high when a precharge command is issued, all banks are precharged. If A10 = low when a precharge command is issued, only the bank that is selected by BA1, BA0 is precharged. If A10 = high when read or write command, auto-precharge function is enabled. While A10 = low, auto-precharge function is disabled. BA0 and BA1 (input pins) BA0, BA1 are bank select signals (BA). The memory array is divided into bank 0, bank 1, bank 2 and bank 3. (See Bank Select Signal Table) [Bank Select Signal Table] BA0 BA1 Bank 0 L L Bank 1 H L Bank 2 L H Bank 3 H H Remark: H: VIH. L: VIL. CKE (input pin) CKE controls power down and self-refresh. The power down and the self-refresh commands are entered when the CKE is driven low and exited when it resumes to high. The CKE level must be kept for 1 CK cycle at least, that is, if CKE changes at the cross point of the CK rising edge and the VREF level with proper setup time tIS, at the next CK rising edge CKE level must be kept with proper hold time tIH. DQ and CB (input and output pins) Data are input to and output from these pins. DQS and /DQS (input and output pin) DQS and /DQS provide the read data strobes (as output) and the write data strobes (as input). Preliminary Data Sheet E0920E10 (Ver. 1.0) 21 EBE11ED8AGWA DM (input pins) DM is the reference signal of the data input mask function. DMs are sampled at the cross point of DQS and /DQS. VDD (power supply pins) 1.8V is applied. (VDD is for the internal circuit.) VDDSPD (power supply pin) 1.8V is applied (For serial EEPROM). VSS (power supply pin) Ground is connected. Detailed Operation Part and Timing Waveforms Refer to the EDE5108AGBG datasheet (E0917E). Preliminary Data Sheet E0920E10 (Ver. 1.0) 22 EBE11ED8AGWA Physical Outline Unit: mm 4.00 max 0.5 min 4.00 min (DATUM -A-) Component area (Front) 1 120 B A 63.00 1.27 ± 0.10 55.00 4.00 Component area (Back) FULL R 30.00 240 17.80 121 10.00 133.35 3.00 Detail B (DATUM -A-) 1.00 4.00 0.20 ± 0.15 2.50 ± 0.20 Detail A 2.50 FULL R 0.80 ± 0.05 3.80 5.00 1.50 ± 0.10 ECA-TS2-0093-01 Preliminary Data Sheet E0920E10 (Ver. 1.0) 23 EBE11ED8AGWA CAUTION FOR HANDLING MEMORY MODULES When handling or inserting memory modules, be sure not to touch any components on the modules, such as the memory ICs, chip capacitors and chip resistors. It is necessary to avoid undue mechanical stress on these components to prevent damaging them. In particular, do not push module cover or drop the modules in order to protect from mechanical defects, which would be electrical defects. When re-packing memory modules, be sure the modules are not touching each other. Modules in contact with other modules may cause excessive mechanical stress, which may damage the modules. MDE0202 NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR MOS DEVICES Exposing the MOS devices to a strong electric field can cause destruction of the gate oxide and ultimately degrade the MOS devices operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it, when once it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. MOS devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wrist strap. MOS devices must not be touched with bare hands. Similar precautions need to be taken for PW boards with semiconductor MOS devices on it. 2 HANDLING OF UNUSED INPUT PINS FOR CMOS DEVICES No connection for CMOS devices input pins can be a cause of malfunction. If no connection is provided to the input pins, it is possible that an internal input level may be generated due to noise, etc., hence causing malfunction. CMOS devices behave differently than Bipolar or NMOS devices. Input levels of CMOS devices must be fixed high or low by using a pull-up or pull-down circuitry. Each unused pin should be connected to VDD or GND with a resistor, if it is considered to have a possibility of being an output pin. The unused pins must be handled in accordance with the related specifications. 3 STATUS BEFORE INITIALIZATION OF MOS DEVICES Power-on does not necessarily define initial status of MOS devices. Production process of MOS does not define the initial operation status of the device. Immediately after the power source is turned ON, the MOS devices with reset function have not yet been initialized. Hence, power-on does not guarantee output pin levels, I/O settings or contents of registers. MOS devices are not initialized until the reset signal is received. Reset operation must be executed immediately after power-on for MOS devices having reset function. CME0107 Preliminary Data Sheet E0920E10 (Ver. 1.0) 24 EBE11ED8AGWA The information in this document is subject to change without notice. Before using this document, confirm that this is the latest version. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of Elpida Memory, Inc. Elpida Memory, Inc. does not assume any liability for infringement of any intellectual property rights (including but not limited to patents, copyrights, and circuit layout licenses) of Elpida Memory, Inc. or third parties by or arising from the use of the products or information listed in this document. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of Elpida Memory, Inc. or others. Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of the customer's equipment shall be done under the full responsibility of the customer. Elpida Memory, Inc. assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. [Product applications] Elpida Memory, Inc. makes every attempt to ensure that its products are of high quality and reliability. However, users are instructed to contact Elpida Memory's sales office before using the product in aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment, medical equipment for life support, or other such application in which especially high quality and reliability is demanded or where its failure or malfunction may directly threaten human life or cause risk of bodily injury. [Product usage] Design your application so that the product is used within the ranges and conditions guaranteed by Elpida Memory, Inc., including the maximum ratings, operating supply voltage range, heat radiation characteristics, installation conditions and other related characteristics. Elpida Memory, Inc. bears no responsibility for failure or damage when the product is used beyond the guaranteed ranges and conditions. Even within the guaranteed ranges and conditions, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-safes, so that the equipment incorporating Elpida Memory, Inc. products does not cause bodily injury, fire or other consequential damage due to the operation of the Elpida Memory, Inc. product. [Usage environment] This product is not designed to be resistant to electromagnetic waves or radiation. This product must be used in a non-condensing environment. If you export the products or technology described in this document that are controlled by the Foreign Exchange and Foreign Trade Law of Japan, you must follow the necessary procedures in accordance with the relevant laws and regulations of Japan. Also, if you export products/technology controlled by U.S. export control regulations, or another country's export control laws or regulations, you must follow the necessary procedures in accordance with such laws or regulations. If these products/technology are sold, leased, or transferred to a third party, or a third party is granted license to use these products, that third party must be made aware that they are responsible for compliance with the relevant laws and regulations. M01E0107 Preliminary Data Sheet E0920E10 (Ver. 1.0) 25