AOD464 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD464 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. Standard Product AOD464 is Pbfree (meets ROHS & Sony 259 specifications). AOD464L is a Green Product ordering option. AOD464 and AOD464L are electrically identical. VDS (V) = 105V ID = 40 A (VGS =10V) RDS(ON) < 28 mΩ (VGS =10V) @ 20A RDS(ON) < 31 mΩ (VGS = 6V) TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C Continuous Drain Current C C TC=25°C Power Dissipation B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. A 80 20 A EAR 200 mJ 100 2.3 W 1.5 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 50 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case B V IAR PD TC=100°C TA=25°C Power Dissipation A ±25 28 ID IDM C Repetitive avalanche energy L=0.1mH Units V 40 TC=100°C Pulsed Drain Current Avalanche Current Maximum 105 RθJA RθJC Typ 15 45 1 °C Max 18 55 1.5 Units °C/W °C/W °C/W AOD464 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=10mA, VGS=0V 105 1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 2.5 ID(ON) On state drain current VGS=10V, VDS=5V 80 TJ=55°C VGS=10V, ID=20A TJ=125°C Static Drain-Source On-Resistance VGS=6V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Max 5 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=50V, ID=20A µA 100 nA 3.2 4 V 21.5 28 32 40 24 31 mΩ 1 V 55 A 2445 pF A 50 0.73 2038 VGS=0V, VDS=25V, f=1MHz Units V VDS=84V, VGS=0V IDSS RDS(ON) Typ mΩ S 204 pF 85 pF 1.3 1.56 Ω 38.5 46 nC 8 nC Qgd Gate Drain Charge 10 nC tD(on) Turn-On DelayTime 12.7 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 59.6 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 161 VGS=10V, VDS=50V, RL=2.7Ω, RGEN=3Ω 8.2 ns 31.5 ns 11.2 ns 74 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev0: July2005 Alpha & Omega Semiconductor, Ltd. AOD464 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 25 10V 80 VDS=5V 20 6V 15 ID (A) ID(A) 60 125°C 10 40 5V 5 20 25°C VGS=4.5V 0 0 0 1 2 3 4 2 5 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 4.5 5 VGS(Volts) Figure 2: Transfer Characteristics 40 2.4 Normalized On-Resistance RDS(ON) (mΩ) 2.2 30 VGS=6V 20 VGS=10V VGS=10V, 20A 2 1.8 VGS=6V,20A 1.6 1.4 1.2 1 10 0 10 20 30 0.8 40 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 60 ID=20A 1.0E+01 125°C 50 1.0E+00 IS (A) RDS(ON) (mΩ) 125°C 40 1.0E-01 25°C 1.0E-02 30 1.0E-03 25°C 1.0E-04 20 4 8 12 16 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AOD464 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 10 VDS=50V ID=20A Ciss Capacitance (nF) VGS (Volts) 8 6 4 2 1 Coss 2 0 Crss 0 0 10 20 30 40 0 20 40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 1000 300 TJ(Max)=175°C, TA=25°C TJ(Max)=175°C TA=25°C 10µs RDS(ON) limited 100µs DC Power (W) ID (Amps) 100 10 100 200 100 1ms, DC 1 0 0.0001 0.1 0.1 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=1.5°C/W 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. 0.1 AOD464 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 tA = L ⋅ ID BV − V DD 40 Power Dissipation (W) ID(A), Peak Avalanche Current 60 TA=25°C TA=150°C 20 0 0.000001 100 50 0 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 50 100 40 80 Power (W) Current rating ID(A) Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability 30 20 60 40 20 10 0 0.01 0 0 25 50 75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B) 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 175 ZθJA Normalized Transient Thermal Resistance 100 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD 0.01 0.001 0.00001 Single Pulse 0.0001 0.001 Ton 0.01 0.1 1 T 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. 100 1000