May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) DESCRIPTION Outline Drawing The MGF4934BM super-low noise HEMT (High Electron Mobility Transistor) is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost performance. FEATURES Low noise figure @ f=12GHz NFmin. = 0.50dB (Typ.) Fig.1 High associated gain @ f=12GHz Gs = 12.5dB (Typ.) MITSUBISHI Proprietary APPLICATION S to Ku band low noise amplifiers Not to be reproduced or disclosed without permission by Mitsubishi Electric QUALITY GRADE GG RECOMMENDED BIAS CONDITIONS VDS=2V , ID=10mA ORDERING INFORMATION Tape & reel 3000pcs/reel ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO Parameter Gate to drain voltage Gate to source voltage Ratings Unit -4 V -4 V mA Total power dissipation 50 mW Channel temperature 125 °C -55 to +125 °C Drain current PT Tch Tstg Storage temperature ELECTRICAL CHARACTERISTICS V(BR)GDO (Ta=25°C ) IDSS ID Symbol Keep Safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measure such as (I) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Parameter (Ta=25°C ) Test conditions Limits Unit MIN. TYP. MAX -3.5 -- -- V -- -- 50 µA mA Gate to drain breakdown voltage IG=-10µA IGSS Gate to source leakage current VGS=-2V,VDS=0V IDSS Saturated drain current VGS=0V,VDS=2V 12 -- 60 Gate to source cut-off voltage VDS=2V,ID=500µA -0.1 -- -1.5 V Associated gain VDS=2V, 11.5 12.5 -- dB Minimum noise figure ID=10mA,f=12GHz -- 0.50 0.80 dB VGS(off) Gs NFmin. MITSUBISHI (1/6) May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Fig.1 2.10 ±0.1 1.30 ±0.05 (0.65) (0.65) 0.30 +0.1 -0.05 +0.1 0.30 -0.05 ① ±0.1 ±0.1 1.25 Top 2.05 ② B r ② ③ 0.40 +0.05 +0.1 0.30 -0.05 +0.1 -0.05 0.11 -0 (0.60) (0.65) 0.49 ±0.05 1.25 ±0.05 Side ③ ② Unit: mm (0.85) Bottom ② ① Gate ② Source ③ Drain ① (GD-30) MITSUBISHI (2/6) May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) TYPICAL CHARACTERISTICS (Ta=25°C) ID vs. VDS ID vs. VGS (VDS=2V) 50 40 40 Drain Current, I D(mA) Drain Current, I D(mA) (VGS=~0.1V/STEP) 50 30 20 10 0 0 1 2 3 30 20 10 0 -1.0 4 Drain to Source voltage, VDS(V) -0.5 Gate to Souce voltage, VGS(V) NF & Gs vs. ID 2.2 15 Ta=25℃ VDS=2V f=12GHz 1.8 14 13 Gs 1.6 12 1.4 11 1.2 10 1.0 9 0.8 8 NF 0.6 7 0.4 6 0.2 5 0.0 Associated Gain, Gs (dB) Noise Figure, NF (dB) 2.0 4 0 5 10 15 20 Drain Current, ID (mA) MITSUBISHI (3/6) 0.0 May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) S PARAMETERS (VDS=2V,ID=10mA,Ta=room temperature) Noise Parameter Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 S11 (mag) (ang) 0.986 -14.0 0.961 -27.8 0.918 -41.9 0.863 -59.4 0.808 -72.1 0.748 -85.2 0.683 -98.1 0.613 -111.9 0.543 -126.8 0.474 -142.9 0.421 -160.9 0.395 177.9 0.395 154.9 0.433 132.9 0.491 114.0 0.559 97.5 0.630 83.0 0.692 70.3 0.739 60.2 0.787 52.4 0.828 45.4 0.866 39.4 0.894 33.7 0.921 26.1 0.937 16.9 0.936 5.9 S21 (mag) (ang) 4.534 163.6 4.478 148.2 4.394 132.8 4.523 116.2 4.309 102.2 4.148 88.6 4.015 75.1 3.860 61.9 3.744 49.0 3.644 35.8 3.552 22.8 3.488 9.6 3.396 -4.0 3.295 -17.6 3.183 -31.5 3.056 -45.9 2.886 -60.6 2.662 -74.9 2.401 -87.7 2.198 -98.5 2.060 -109.9 1.940 -120.6 1.810 -131.4 1.710 -142.1 1.632 -152.9 1.541 -165.3 S12 (mag) (ang) 0.014 79.1 0.027 70.5 0.038 61.9 0.052 50.3 0.060 43.3 0.067 36.9 0.073 30.5 0.078 25.3 0.082 20.9 0.087 17.1 0.092 14.0 0.100 11.1 0.111 7.6 0.122 2.2 0.133 -4.2 0.144 -11.1 0.154 -18.6 0.161 -26.6 0.169 -34.2 0.174 -42.1 0.179 -50.4 0.180 -58.5 0.183 -65.4 0.184 -71.5 0.187 -78.0 0.186 -86.0 S22 (mag) (ang) 0.676 -11.0 0.663 -22.3 0.638 -32.7 0.580 -45.1 0.559 -53.8 0.530 -62.2 0.496 -70.0 0.454 -76.5 0.411 -83.1 0.364 -91.0 0.321 -100.6 0.278 -114.7 0.239 -133.9 0.214 -159.5 0.219 170.8 0.256 144.4 0.315 122.4 0.379 104.1 0.440 88.4 0.484 73.6 0.527 60.5 0.575 47.9 0.632 35.7 0.695 25.4 0.770 16.7 0.846 8.8 (VDS=2V,ID=10mA, Ta=room temperature)) NFmin (dB) 0.25 0.26 0.27 0.29 0.31 0.33 0.36 0.38 0.41 0.43 0.48 0.51 0.54 0.58 Γopt (mag) (ang) 0.99 7.2 0.98 11.1 0.95 18.0 0.92 27.4 0.89 38.5 0.82 53.1 0.75 68.2 0.67 83.3 0.60 100.2 0.53 115.2 0.47 131.4 0.42 150.3 0.37 167.7 0.35 -178.8 Rn (Ω) 17.0 15.5 13.5 12.0 10.5 9.0 7.5 6.0 4.5 3.0 2.0 1.5 1.5 1.5 Reference point MITSUBISHI (4/6) Reference point Gate Drain 0.96 Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 45ﾟ 2.5mm Board: εr=2.6 Thickness: 0.4mm (4-φ0.4: through-hole) May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) S PARAMETERS (VDS=0V,VGS=0V,Ta=room temperature) Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 S11 (mag) (ang) 0.995 -12.5 0.990 -24.6 0.991 -37.5 0.983 -53.3 0.976 -67.1 0.961 -81.0 0.951 -95.7 0.940 -112.3 0.913 -130.9 0.902 -151.8 0.887 -175.9 0.883 159.0 0.884 134.4 0.889 112.1 0.896 93.6 0.907 78.5 0.911 66.4 0.919 55.9 0.924 47.1 0.919 38.7 0.921 31.2 0.924 24.3 0.928 18.1 0.950 11.6 0.970 5.4 0.978 -1.5 S21 (mag) (ang) 0.008 96.4 0.018 100.5 0.032 99.5 0.051 92.5 0.074 85.0 0.099 76.0 0.130 65.5 0.163 53.6 0.196 41.0 0.229 27.1 0.256 12.0 0.274 -2.5 0.276 -16.9 0.268 -30.5 0.257 -42.0 0.241 -51.5 0.228 -59.6 0.221 -67.5 0.217 -76.6 0.204 -87.1 0.192 -95.0 0.179 -103.1 0.168 -110.3 0.159 -116.7 0.149 -122.1 0.141 -128.2 S12 (mag) (ang) 0.008 97.7 0.018 100.7 0.032 98.9 0.051 94.0 0.075 85.5 0.100 76.5 0.131 65.3 0.163 54.3 0.198 41.3 0.230 27.3 0.257 12.7 0.273 -2.7 0.278 -17.2 0.270 -30.2 0.256 -42.0 0.241 -51.1 0.227 -59.8 0.221 -67.4 0.218 -76.5 0.204 -86.9 0.193 -95.3 0.179 -103.2 0.168 -110.6 0.157 -116.3 0.150 -122.1 0.141 -128.3 S22 (mag) 0.673 0.673 0.671 0.694 0.697 0.704 0.719 0.730 0.745 0.759 0.774 0.783 0.794 0.800 0.807 0.811 0.807 0.815 0.817 0.814 0.810 0.811 0.817 0.816 0.830 0.844 (ang) 165.1 152.1 138.7 127.4 112.5 97.6 83.4 70.8 59.2 49.3 41.2 34.8 29.2 24.0 18.7 13.2 7.1 0.6 -6.9 -14.8 -23.2 -31.2 -39.2 -46.5 -53.8 -61.8 (VDS=0V,VGS=-2.5V,Ta=room temperature) Freq. (GHz) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 S11 (mag) (ang) 0.993 -9.6 0.996 -18.9 0.992 -28.3 0.987 -39.7 0.981 -49.5 0.975 -59.1 0.968 -68.8 0.963 -79.2 0.949 -89.9 0.943 -102.2 0.932 -117.2 0.929 -134.6 0.932 -155.8 0.938 -179.2 0.940 156.2 0.948 133.1 0.951 112.7 0.952 95.4 0.956 80.9 0.951 68.1 0.953 57.2 0.946 47.5 0.950 38.8 0.965 30.8 0.982 23.3 0.993 15.4 S21 (mag) (ang) 0.022 78.7 0.044 68.6 0.065 59.8 0.092 48.4 0.112 38.8 0.131 28.8 0.150 19.2 0.169 7.7 0.185 -4.5 0.200 -18.4 0.209 -34.7 0.207 -52.4 0.187 -73.4 0.148 -96.3 0.091 -119.2 0.033 -137.6 0.018 9.9 0.058 0.6 0.091 -11.2 0.117 -24.5 0.138 -37.5 0.150 -49.7 0.157 -60.4 0.161 -69.7 0.162 -77.8 0.163 -85.8 S12 (mag) (ang) 0.022 79.0 0.044 68.8 0.065 59.2 0.092 48.4 0.112 38.8 0.130 29.1 0.150 19.2 0.168 8.0 0.186 -4.3 0.200 -18.5 0.209 -34.4 0.207 -52.8 0.188 -73.6 0.149 -96.7 0.091 -119.3 0.034 -136.8 0.018 9.0 0.058 0.5 0.090 -11.3 0.118 -24.3 0.137 -37.3 0.150 -49.6 0.157 -60.2 0.161 -70.1 0.162 -77.6 0.163 -85.8 MITSUBISHI (5/6) S22 (mag) 0.998 1.000 0.991 0.984 0.986 0.980 0.975 0.968 0.959 0.949 0.943 0.932 0.928 0.942 0.947 0.953 0.957 0.965 0.964 0.960 0.954 0.947 0.952 0.963 0.981 0.995 (ang) -10.6 -21.3 -31.2 -42.1 -51.5 -60.6 -70.1 -80.7 -92.1 -105.6 -121.1 -139.6 -160.7 176.8 153.6 132.4 112.9 94.8 79.2 64.6 50.5 37.4 24.9 13.3 1.6 -10.3 May/2008 MITSUBISHI SEMICONDUTOR <GaAs FET> MGF4934AM/BM SUPER LOW NOISE InGaAs HEMT (4pin flat lead package) Requests Regarding Safety Designs Mitsubishi Electric constantly strives to raise the level of its quality and reliability. Despite these concerted efforts, however, there will be occasions when our semiconductor products suffer breakdowns, malfunctions or other problems. In view of this reality, it is requested that every feasible precaution be taken in the pursuit of redundancy design, malfunction prevention design and other safety-related designs, to prevent breakdowns or malfunctions in our products from resulting in accidents involving people, fires, social losses or other problems, thereby upholding the highest levels of safety in the products when in use by customers. Matters of Importance when Using these Materials 1. These materials are designed as reference materials to ensure that all customers purchase Mitsubishi Electric semiconductors best suited to their specific use applications. 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