FEATURES FUNCTIONAL BLOCK DIAGRAMS Overvoltage protection up to −55 V and +55 V Power-off protection up to −55 V and +55 V Overvoltage detection on source and drain pins Low on resistance: 10 Ω On-resistance flatness of 0.5 Ω 3 kV human body model (HBM) ESD rating Latch-up immune under any circumstance Known state without digital inputs present VSS to VDD analog signal range ±5 V to ±22 V dual-supply operation 8 V to 44 V single-supply operation Fully specified at ±15 V, ±20 V, +12 V, and +36 V ADG5412BF S1 D1 S2 D2 S3 D3 S4 D4 FAULT DETECTION + SWITCH DRIVER FF IN1 IN2 IN3 IN4 NOTES 1. SWITCHES SHOWN FOR A LOGIC 1 INPUT. 12473-001 Data Sheet Bidirectional Fault Protection and Detection, 10 Ω RON, Quad SPST Switches ADG5412BF/ADG5413BF Figure 1. ADG5412BF APPLICATIONS ADG5413BF S1 D1 S2 D2 S3 D3 S4 D4 FAULT DETECTION + SWITCH DRIVER FF IN1 IN2 IN3 IN4 NOTES 1. SWITCHES SHOWN FOR A LOGIC 1 INPUT. 12473-200 Analog input/output modules Process control/distributed control systems Data acquisition Instrumentation Avionics Automatic test equipment Communication systems Relay replacement Figure 2. ADG5413BF GENERAL DESCRIPTION The ADG5412BF and ADG5413BF contain four independently controlled single-pole/single-throw (SPST) switches. The ADG5412BF has four switches that turn on with Logic 1 inputs. The ADG5413BF has two switches that turn on and two switches that turn off with Logic 1 inputs. Each switch conducts equally well in both directions when on, and each switch has an input signal range that extends to the supplies. The digital inputs are compatible with 3 V logic inputs over the full operating supply range. The low on resistance of these switches, combined with onresistance flatness over a significant portion of the signal range make them an ideal solution for data acquisition and gain switching applications where excellent linearity and low distortion are critical. When no power supplies are present, the switch remains in the off condition, and the switch inputs are high impedance. Under normal operating conditions, if the analog input signal levels on any switch pin exceed VDD or VSS by a threshold voltage, VT, the switch turns off. Input signal levels up to +55 V and −55 V relative to ground are blocked, in both the powered and unpowered condition. 3. Rev. B PRODUCT HIGHLIGHTS 1. 2. 4. 5. 6. Switch pins are protected against voltages greater than the supply rails, up to −55 V and +55 V. Switch pins are protected against voltages between −55 V and +55 V, in an unpowered state. Overvoltage detection with digital output indicates operating state of switches. Trench isolation guards against latch-up. Optimized for low on resistance and on-resistance flatness. The ADG5412BF/ADG5413BF can be operated from a dual-supply of ±5 V up to ±22 V or a single power supply of 8 V up to 44 V. Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2014–2016 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com ADG5412BF/ADG5413BF Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 Test Circuits ..................................................................................... 19 Applications ....................................................................................... 1 Terminology .................................................................................... 23 Functional Block Diagrams ............................................................. 1 Theory of Operation ...................................................................... 25 General Description ......................................................................... 1 Switch Architecture .................................................................... 25 Product Highlights ........................................................................... 1 Fault Protection .......................................................................... 26 Revision History ............................................................................... 2 Applications Information .............................................................. 27 Specifications..................................................................................... 3 Power Supply Rails ..................................................................... 27 ±15 V Dual-Supply ....................................................................... 3 Power Supply Sequencing Protection ...................................... 27 ±20 V Dual-Supply ....................................................................... 5 Signal Range ................................................................................ 27 12 V Single-Supply ....................................................................... 7 Low Impedance Channel Protection ....................................... 27 36 V Single-Supply ....................................................................... 9 High Voltage Surge Suppression .............................................. 27 Continuous Current per Channel, Sx or Dx ........................... 11 Intelligent Fault Detection ........................................................ 27 Absolute Maximum Ratings.......................................................... 12 Large Voltage, High Frequency Signals ................................... 27 ESD Caution ................................................................................ 12 Outline Dimensions ....................................................................... 28 Pin Configuration and Function Descriptions ........................... 13 Ordering Guide .......................................................................... 28 Typical Performance Characteristics ........................................... 14 REVISION HISTORY 1/16—Rev. A to Rev. B Changes to Table 1 ............................................................................ 3 Changes to Table 2 ............................................................................ 5 Changes to Table 3 ............................................................................ 7 Changes to Table 4 ............................................................................ 9 Changes to Switch Architecture Section ..................................... 25 3/15—Rev. 0 to Rev. A Added LFCSP Package ....................................................... Universal Changes to Output Leakage Current, IS or ID/With Overvoltage Parameter, Table 3............................................................................. 7 Changes to Output Leakage Current, IS or ID/With Overvoltage Parameter, Table 4............................................................................. 9 Changes to Table 6.......................................................................... 12 Added Figure 4, Renumbered Sequentially ................................ 13 Changes to Table 7.......................................................................... 13 Changes to Figure 35...................................................................... 19 Changes to Figure 50...................................................................... 25 Changes to Applications Information Section ........................... 27 Updated Outline Dimensions ....................................................... 28 Changes to Ordering Guide .......................................................... 28 7/14—Revision 0: Initial Version Rev. B | Page 2 of 28 Data Sheet ADG5412BF/ADG5413BF SPECIFICATIONS ±15 V DUAL-SUPPLY VDD = 15 V ± 10%, VSS = −15 V ± 10%, GND = 0 V, CDECOUPLING = 0.1 μF, unless otherwise noted. Table 1. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On-Resistance Match Between Channels, ∆RON On-Resistance Flatness, RFLAT(ON) Threshold Voltage, VT LEAKAGE CURRENTS Source Off Leakage, IS (Off ) Drain Off Leakage, ID (Off ) Channel On Leakage, ID (On), IS (On) +25°C −40°C to +85°C VDD to VSS 10 11.2 9.5 10.7 0.05 0.5 0.05 0.35 0.6 0.9 0.1 0.4 0.7 ±0.1 ±1.5 ±0.1 ±1.5 ±0.3 ±2.0 14 16.5 13.5 16 0.6 0.7 0.5 0.5 1.1 1.1 0.5 0.5 V Ω typ Ω max Ω typ Ω max Ω typ Ω max Ω typ Ω max Ω typ Ω max Ω typ Ω max V typ ±24 ±5.5 ±20 ±2.5 ±5.5 nA typ nA max nA typ nA max nA typ nA max ±78 μA typ ±40 μA typ Power Supplies Grounded or Floating Output Leakage Current, IS or ID With Overvoltage ±20 ±200 ±10 ±250 Power Supplies Grounded Power Supplies Floating ±30 ±10 ±50 ±10 nA typ ±250 nA max nA typ ±100 ±10 nA max μA typ 2.0 0.8 V min V max μA typ μA max pF typ ±0.7 ±1.2 Digital Input Capacitance, CIN Unit ±5.5 FAULT Input Leakage Current, IS or ID With Overvoltage DIGITAL INPUTS/OUTPUTS Input Voltage High, VINH Low, VINL Input Current, IINL or IINH −40°C to +125°C 5.0 Rev. B | Page 3 of 28 Test Conditions/Comments VDD = 13.5 V, VSS = −13.5 V, see Figure 32 VS = ±10 V, IS = −10 mA VS = ±9 V, IS = −10 mA VS = ±10 V, IS = −10 mA VS = ±9 V, IS = −10 mA VS = ±10 V, IS = −10 mA VS = ±9 V, IS = −10 mA See Figure 28 VDD = 16.5 V, VSS = −16.5 V VS = ±10 V, VD = ∓10 V, see Figure 33 VS = ±10 V, VD = ∓10 V, see Figure 33 VS = VD = ±10 V, see Figure 34 VDD = 16.5 V, VSS = 16.5 V, GND = 0 V, VS or VD = ±55 V, see Figure 37 VDD = 0 V or floating, VSS = 0 V or floating, GND = 0 V, INx = 0 V or floating, VS or VD = ±55 V, see Figure 38 VDD = 16.5 V, VSS = 16.5 V, GND = 0 V, VS or VD = ±55 V, see Figure 37 VDD = 0 V, VSS = 0 V, GND = 0 V, VS or VD = ±55 V, INx = 0 V, see Figure 38 VDD = floating, VSS = floating, GND = 0 V, VS or VD = ±55 V, INx = 0 V, see Figure 38 VIN = VGND or VDD ADG5412BF/ADG5413BF Parameter Output Voltage High, VOH Low, VOL DYNAMIC CHARACTERISTICS1 tON tOFF Break-Before-Make Time Delay, tD (ADG5413BF Only) Data Sheet +25°C −40°C to +85°C −40°C to +125°C 525 550 545 555 2.0 0.8 400 495 410 510 285 185 Overvoltage Response Time, tRESPONSE Overvoltage Recovery Time, tRECOVERY Interrupt Flag Response Time, tDIGRESP Interrupt Flag Recovery Time, tDIGREC 615 630 1050 1100 115 85 Test Conditions/Comments ns typ ns max ns typ ns max ns typ RL = 300 Ω, CL = 35 pF VS = 10 V, see Figure 47 RL = 300 Ω, CL = 35 pF VS = 10 V, see Figure 47 RL = 300 Ω, CL = 35 pF ns min ns typ ns max ns typ ns max ns typ μs typ ns typ VS1 = VS2 = 10 V, see Figure 46 RL = 1 kΩ, CL = 2 pF, see Figure 41 Charge Injection, QINJ Off Isolation −680 −70 pC typ dB typ Channel-to-Channel Crosstalk −90 dB typ Total Harmonic Distortion Plus Noise, THD + N 0.0015 % typ −3 dB Bandwidth Insertion Loss 270 −0.72 MHz typ dB typ 13 12 24 pF typ pF typ pF typ CS (Off ) CD (Off ) CD (On), CS (On) POWER REQUIREMENTS Normal Mode IDD IGND ISS Fault Mode IDD IGND ISS VDD/VSS 1 460 585 720 930 85 60 600 Unit V min V min V max 0.9 1.2 0.4 0.55 0.5 0.65 1.3 0.6 0.7 RL = 1 kΩ, CL = 2 pF, see Figure 42 CL = 10 pF, see Figure 43 CL = 10 pF, see Figure 44 CL = 10 pF, RPULLUP = 1 kΩ, see Figure 45 VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 48 RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 35 RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 36 RL = 10 kΩ, VS = 15 V p-p, f = 20 Hz to 20 kHz, see Figure 40 RL = 50 Ω, CL = 5 pF, see Figure 39 RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 39 VS = 0 V, f = 1 MHz VS = 0 V, f = 1 MHz VS = 0 V, f = 1 MHz VDD = 16.5 V, VSS = −16.5 V, digital inputs = 0 V, 5 V, or VDD mA typ mA max mA typ mA max mA typ μA max VS = ±55 V 1.2 1.6 0.8 1.0 0.5 1.0 1.8 1.1 1.8 ±5 ±22 Guaranteed by design; not subject to production test. Rev. B | Page 4 of 28 mA typ mA max mA typ mA max mA typ mA max V min V max GND = 0 V GND = 0 V Data Sheet ADG5412BF/ADG5413BF ±20 V DUAL-SUPPLY VDD = 20 V ± 10%, VSS = −20 V ± 10%, GND = 0 V, CDECOUPLING = 0.1 μF, unless otherwise noted. Table 2. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On-Resistance Match Between Channels, ∆RON On-Resistance Flatness, RFLAT(ON) Threshold Voltage, VT LEAKAGE CURRENTS Source Off Leakage, IS (Off ) Drain Off Leakage, ID (Off ) Channel On Leakage, ID (On), IS (On) +25°C −40°C to +85°C VDD to VSS 10 11.5 9.5 11 0.05 0.35 0.05 0.35 1.0 1.4 0.1 0.4 0.7 ±0.1 ±1.5 ±0.1 ±1.5 ±0.3 ±2.0 14.5 16.5 14 16.5 0.5 0.5 0.5 0.5 1.5 1.5 0.5 0.5 V Ω typ Ω max Ω typ Ω max Ω typ Ω max Ω typ Ω max Ω typ Ω max Ω typ Ω max V typ ±24 ±5.5 ±20 ±2.5 ±5.5 nA typ nA max nA typ nA max nA typ nA max ±78 μA typ ±40 μA typ Power Supplies Grounded or Floating Output Leakage Current, IS or ID With Overvoltage ±0.4 ±1.0 ±10 ±1.0 Power Supplies Grounded Power Supplies Floating ±30 ±10 ±50 ±10 μA typ ±1.0 μA max nA typ ±100 ±10 nA max μA typ 2.0 0.8 V min V max μA typ μA max pF typ 0.7 1.2 Digital Input Capacitance, CIN Unit ±5.5 FAULT Input Leakage Current, IS or ID With Overvoltage DIGITAL INPUTS Input Voltage High, VINH Low, VINL Input Current, IINL or IINH −40°C to +125°C 5.0 Rev. B | Page 5 of 28 Test Conditions/Comments VDD = 18 V, VSS = −18 V, see Figure 32 VS = ±15 V, IS = −10 mA VS = ±13.5 V, IS = −10 mA VS = ±15 V, IS = −10 mA VS = ±13.5 V, IS = −10 mA VS = ±15 V, IS = −10 mA VS = ±13.5 V, IS = −10 mA See Figure 28 VDD = 22 V, VSS = −22 V VS = ±15 V, VD = ∓15 V, see Figure 33 VS = ±15 V, VD = ∓15 V, see Figure 33 VS = VD = ±15 V, see Figure 34 VDD = 22 V, VSS = −22 V, GND = 0 V, VS or VD = ±55 V, see Figure 37 VDD = 0 V or floating, VSS = 0 V or floating, GND = 0 V, INx = 0 V or floating, VS or VD = ±55 V, see Figure 38 VDD = +22 V, VSS = −22 V, GND = 0 V, VS or VD = ±55 V, see Figure 37 VDD = 0 V, VSS = 0 V, GND = 0 V, VS or VD = ±55 V, INx = 0 V, see Figure 38 VDD = floating, VSS = floating, GND = 0 V, VS or VD = ±55 V, INx = 0 V, see Figure 38 VIN = VGND or VDD ADG5412BF/ADG5413BF Parameter Output Voltage High, VOH Low, VOL DYNAMIC CHARACTERISTICS1 tON tOFF Break-Before-Make Time Delay, tD (ADG5413BF Only) Data Sheet +25°C −40°C to +85°C −40°C to +125°C 2.0 0.8 400 500 415 515 295 Overvoltage Recovery Time, tRECOVERY Interrupt Flag Response Time, tDIGRESP Interrupt Flag Recovery Time, tDIGREC 530 555 550 565 500 515 1400 1700 115 85 ns typ ns max ns typ ns max ns typ RL = 300 Ω, CL = 35 pF VS = 10 V, see Figure 47 RL = 300 Ω, CL = 35 pF VS = 10 V, see Figure 47 RL = 300 Ω, CL = 35 pF ns min ns typ ns max ns typ ns max ns typ μs typ ns typ VS1 = VS2 = 10 V, see Figure 46 RL = 1 kΩ, CL = 2 pF, see Figure 41 Charge Injection, QINJ −640 pC typ Off Isolation −70 dB typ Channel-to-Channel Crosstalk −90 dB typ Total Harmonic Distortion Plus Noise, THD + N 0.001 % typ −3 dB Bandwidth Insertion Loss 270 −0.73 MHz typ dB typ 12 11 23 pF typ pF typ pF typ CS (Off ) CD (Off ) CD (On), CS (On) POWER REQUIREMENTS Normal Mode IDD IGND ISS Fault Mode IDD IGND ISS VDD/VSS 1 370 480 840 1200 85 60 600 0.9 1.2 0.4 0.55 0.5 0.65 Test Conditions/Comments V min V max 200 Overvoltage Response Time, tRESPONSE Unit 1.3 0.6 0.7 RL = 1 kΩ, CL = 2 pF, see Figure 42 CL = 10 pF, see Figure 43 CL = 10 pF, see Figure 44 CL = 10 pF, RPULLUP = 1 kΩ, see Figure 45 VS = 0 V, RS = 0 Ω, CL = 1 nF, see Figure 48 RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 35 RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 36 RL = 10 kΩ, VS = 20 V p-p, f = 20 Hz to 20 kHz, see Figure 40 RL = 50 Ω, CL = 5 pF, see Figure 39 RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 39 VS = 0 V, f = 1 MHz VS = 0 V, f = 1 MHz VS = 0 V, f = 1 MHz VDD = 22 V, VSS = −22 V, digital inputs = 0 V, 5 V, or VDD mA typ mA max mA typ mA max mA typ mA max VS = ±55 V 1.2 1.6 0.8 1.0 0.5 1.0 1.8 1.1 1.8 ±5 ±22 Guaranteed by design; not subject to production test. Rev. B | Page 6 of 28 mA typ mA max mA typ mA max mA typ mA max V min V max GND = 0 V GND = 0 V Data Sheet ADG5412BF/ADG5413BF 12 V SINGLE-SUPPLY VDD = 12 V ± 10%, VSS = 0 V, GND = 0 V, CDECOUPLING = 0.1 μF, unless otherwise noted. Table 3. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On-Resistance Match Between Channels, ∆RON On-Resistance Flatness, RFLAT(ON) Threshold Voltage, VT LEAKAGE CURRENTS Source Off Leakage, IS (Off ) Drain Off Leakage, ID (Off ) Channel On Leakage, ID (On), IS (On) +25°C −40°C to +85°C 0 V to VDD 22 24.5 10 11.2 0.05 0.5 0.05 0.5 12.5 14.5 0.6 0.9 0.7 ±0.1 ±1.5 ±0.1 ±1.5 ±0.3 ±2.0 31 37 14 16.5 0.6 0.7 0.6 0.7 19 23 1.1 1.3 V Ω typ Ω max Ω typ Ω max Ω typ Ω max Ω typ Ω max Ω typ Ω max Ω typ Ω max V typ ±24 ±5.5 ±20 ±2.5 ±5.5 nA typ nA max nA typ nA max nA typ nA max ±78 μA typ ±40 μA typ Power Supplies Grounded or Floating Output Leakage Current, IS or ID With Overvoltage ±20 ±200 ±10 ±250 Power Supplies Grounded Power Supplies Floating ±30 ±10 ±50 ±10 nA typ ±250 nA max nA typ ±100 ±10 nA max μA typ 2.0 0.8 5.0 V min V max μA typ μA max pF typ 2.0 0.8 V min V max 0.7 1.2 Digital Input Capacitance, CIN Output Voltage High, VOH Low, VOL Unit ±5.5 FAULT Input Leakage Current, IS or ID With Overvoltage DIGITAL INPUTS Input Voltage High, VINH Low, VINL Input Current, IINL or IINH −40°C to +125°C Rev. B | Page 7 of 28 Test Conditions/Comments VDD = 10.8 V, VSS = 0 V, see Figure 32 VS = 0 V to 10 V, IS = −10 mA VS = 3.5 V to 8.5 V, IS = −10 mA VS = 0 V to 10 V, IS = −10 mA VS = 3.5 V to 8.5 V, IS = −10 mA VS = 0 V to 10 V, IS = −10 mA VS = 3.5 V to 8.5 V, IS = −10 mA See Figure 28 VDD = 13.2 V, VSS = 0 V VS = 1 V/10 V, VD = 10 V/1 V, see Figure 33 VS = 1 V/10 V, VD = 10 V/1 V, see Figure 33 VS = VD = 1 V/10 V, see Figure 34 VDD = 13.2 V, VSS = 0 V, GND = 0 V, VS or VD = ±55 V, see Figure 37 VDD = 0 V or floating, VSS = 0 V or floating, GND = 0 V, INx = 0 V or floating, VS or VD = ±55 V, see Figure 38 VDD = 13.2 V, VSS = 0 V, GND = 0 V, VS or VD = ±55 V, see Figure 37 VDD = 0 V, VSS = 0 V, GND = 0 V, VS or VD = ±55 V, INx = 0 V, see Figure 38 VDD = floating, VSS = floating, GND = 0 V, VS or VD = ±55 V, INx = 0 V, see Figure 38 VIN = VGND or VDD ADG5412BF/ADG5413BF Parameter DYNAMIC CHARACTERISTICS1 tON tOFF Break-Before-Make Time Delay, tD (ADG5413BF Only) Data Sheet +25°C 400 485 375 460 260 −40°C to +85°C −40°C to +125°C 515 540 495 520 170 Overvoltage Response Time, tRESPONSE Test Conditions/Comments ns typ ns max ns typ ns max ns typ RL = 300 Ω, CL = 35 pF VS = 8 V, see Figure 47 RL = 300 Ω, CL = 35 pF VS = 8 V, see Figure 47 RL = 300 Ω, CL = 35 pF ns min ns typ ns max ns typ ns max ns typ μs typ ns typ pC typ dB typ VS1 = VS2 = 8 V, see Figure 46 RL = 1 kΩ, CL = 2 pF, see Figure 41 Charge Injection, QINJ Off Isolation 560 660 640 800 85 60 600 −340 −65 Channel-to-Channel Crosstalk −90 dB typ Total Harmonic Distortion Plus Noise, THD + N 0.007 % typ −3 dB Bandwidth Insertion Loss 270 −0.74 MHz typ dB typ 16 15 25 pF typ pF typ pF typ Overvoltage Recovery Time, tRECOVERY Interrupt Flag Response Time, tDIGRESP Interrupt Flag Recovery Time, tDIGREC CS (Off ) CD (Off ) CD (On), CS (On) POWER REQUIREMENTS Normal Mode IDD IGND ISS Fault Mode IDD IGND ISS VDD 1 Unit 0.9 1.2 0.4 0.55 0.5 0.65 700 720 865 960 115 85 1.3 0.6 0.7 RL = 1 kΩ, CL = 2 pF, see Figure 42 CL = 10 pF, see Figure 43 CL = 10 pF, see Figure 44 CL = 10 pF, RPULLUP = 1 kΩ, see Figure 45 VS = 6 V, RS = 0 Ω, CL = 1 nF, see Figure 48 RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 35 RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 36 RL = 10 kΩ, VS = 6 V p-p, f = 20 Hz to 20 kHz, see Figure 40 RL = 50 Ω, CL = 5 pF, see Figure 39 RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 39 VS = 6 V, f = 1 MHz VS = 6 V, f = 1 MHz VS = 6 V, f = 1 MHz VDD = 13.2 V, VSS = 0 V, digital inputs = 0 V, 5 V, or VDD mA typ mA max mA typ mA max mA typ mA max VS = ±55 V 1.2 1.6 0.8 1.0 0.5 1.0 1.8 1.1 1.8 8 44 Guaranteed by design; not subject to production test. Rev. B | Page 8 of 28 mA typ mA max mA typ mA max mA typ mA max V min V max VSS = GND = 0 V VSS = GND = 0 V Data Sheet ADG5412BF/ADG5413BF 36 V SINGLE-SUPPLY VDD = 36 V ± 10%, VSS = 0 V, GND = 0 V, CDECOUPLING = 0.1 μF, unless otherwise noted. Table 4. Parameter ANALOG SWITCH Analog Signal Range On Resistance, RON On-Resistance Match Between Channels, ∆RON On-Resistance Flatness, RFLAT(ON) +25°C −40°C to +85°C −40°C to +125°C 0 V to VDD 22 24.5 10 11 0.05 0.5 0.05 0.35 12.5 14.5 0.1 0.4 0.7 31 37 14 16.5 0.6 0.7 0.5 0.5 19 23 0.5 0.5 Unit V Ω typ Ω max Ω typ Ω max Ω typ Ω max Ω typ Ω max Ω typ Ω max Ω typ Ω max V typ Threshold Voltage, VT LEAKAGE CURRENTS Source Off Leakage, IS (Off ) ±0.1 ±1.5 ±0.1 ±5.5 Drain Off Leakage, ID (Off ) ±1.5 ±0.3 ±2.0 ±5.5 ±20 ±2.5 ±5.5 nA max nA typ nA max ±78 μA typ ±40 μA typ Channel On Leakage, ID (On), IS (On) nA typ FAULT Input Leakage Current, IS or ID With Overvoltage Power Supplies Grounded or Floating Output Leakage Current, IS or ID With Overvoltage ±20 ±200 ±10 ±250 Power Supplies Grounded Power Supplies Floating ±30 ±10 ±50 ±10 DIGITAL INPUTS Input Voltage High, VINH Low, VINL Input Current, IINL or IINH ±24 nA typ ±250 nA max nA typ ±100 ±10 nA max μA typ 2.0 0.8 V min V max μA typ μA max pF typ 0.7 1.2 Digital Input Capacitance, CIN nA max nA typ 5.0 Rev. B | Page 9 of 28 Test Conditions/Comments VDD = 32.4 V, VSS = 0 V, see Figure 32 VS = 0 V to 30 V, IS = −10 mA VS = 4.5 V to 28 V, IS = −10 mA VS = 0 V to 30 V, IS = −10 mA VS = 4.5 V to 28 V, IS = −10 mA VS = 0 V to 30 V, IS = −10 mA VS = 4.5 V to 28 V, IS = −10 mA See Figure 28 VDD = 39.6 V, VSS = 0 V VS = 1 V/30 V, VD = 30 V/1 V, see Figure 33 VS = 1 V/30 V, VD = 30 V/1 V, see Figure 33 VS = VD = 1 V/30 V, see Figure 34 VDD = 39.6 V, VSS = 0 V, GND = 0 V, VS or VD = +55 V, −40 V, see Figure 37 VDD = 0 V or floating, VSS = 0 V or floating, GND = 0 V, INx = 0 V or floating, VS or VD = ±55 V, see Figure 38 VDD = 39.6 V, VSS = 0 V, GND = 0 V, VS or VD = +55 V, −40 V, see Figure 37 VDD = 0 V, VSS = 0 V, GND = 0 V, VS or VD = ±55 V, INx = 0 V, see Figure 38 VDD = floating, VSS = floating, GND = 0 V, VS or VD = ±55 V, INx = 0 V, see Figure 38 VIN = VGND or VDD ADG5412BF/ADG5413BF Parameter Output Voltage High, VOH Low, VOL DYNAMIC CHARACTERISTICS1 tON tOFF Break-Before-Make Time Delay, tD (ADG5413BF Only) Data Sheet +25°C −40°C to +85°C −40°C to +125°C 2.0 0.8 400 490 375 460 285 520 545 485 510 RL = 300 Ω, CL = 35 pF VS = 18 V, see Figure 47 RL = 300 Ω, CL = 35 pF VS = 18 V, see Figure 47 RL = 300 Ω, CL = 35 pF ns min ns typ ns max ns typ ns max ns typ μs typ ns typ pC typ VS1 = VS2 = 18 V, see Figure 46 RL = 1 kΩ, CL = 2 pF, see Figure 41 Charge Injection, QINJ Off Isolation −70 dB typ Channel-to-Channel Crosstalk −90 dB typ Total Harmonic Distortion Plus Noise, THD + N 0.001 % typ −3 dB Bandwidth Insertion Loss 270 −0.75 MHz typ dB typ 12 11 23 pF typ pF typ pF typ Interrupt Flag Response Time, tDIGRESP Interrupt Flag Recovery Time, tDIGREC CS (Off ) CD (Off ) CD (On), CS (On) POWER REQUIREMENTS Normal Mode IDD IGND ISS Isolation Mode IDD IGND ISS VDD 1 ns typ ns max ns typ ns max ns typ 250 350 1500 2000 85 60 600 −610 Overvoltage Recovery Time, tRECOVERY 0.9 1.2 0.4 0.55 0.5 0.65 Test Conditions/Comments V min V max 195 Overvoltage Response Time, tRESPONSE Unit 360 375 2300 2700 115 85 1.3 0.6 0.7 RL = 1 kΩ, CL = 2 pF, see Figure 42 CL = 10 pF, see Figure 43 CL = 10 pF, see Figure 44 CL = 10 pF, RPULLUP = 1 kΩ, see Figure 45 VS = 18 V, RS = 0 Ω, CL = 1 nF, see Figure 48 RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 35 RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 36 RL = 10 kΩ, VS = 18 V p-p, f = 20 Hz to 20 kHz, see Figure 40 RL = 50 Ω, CL = 5 pF, see Figure 39 RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 39 VS = 18 V, f = 1 MHz VS = 18 V, f = 1 MHz VS = 18 V, f = 1 MHz VDD = 39.6 V, VSS = 0 V, digital inputs = 0 V, 5 V, or VDD mA typ mA max mA typ mA max mA typ mA max VS = +55 V, −40 V 1.2 1.6 0.8 1.0 0.5 1.0 1.8 1.1 1.8 8 44 Guaranteed by design; not subject to production test. Rev. B | Page 10 of 28 mA typ mA max mA typ mA max mA typ mA max V min V max VSS = GND = 0 V VSS = GND = 0 V Data Sheet ADG5412BF/ADG5413BF CONTINUOUS CURRENT PER CHANNEL, Sx OR Dx Table 5. Parameter 16-LEAD TSSOP θJA = 112.6°C/W 16-LEAD LFCSP θJA = 30.4°C/W 25°C 85°C 125°C Unit Test Conditions/Comments 83 64 59 48 39 29 mA max mA max VS = VSS + 4.5 V to VDD − 4.5 V VS = VSS to VDD 152 118 99 80 61 52 mA max mA max VS = VSS + 4.5 V to VDD − 4.5 V VS = VSS to VDD Rev. B | Page 11 of 28 ADG5412BF/ADG5413BF Data Sheet ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted. Table 6. Parameter VDD to VSS VDD to GND VSS to GND Sx and Dx Sx to VDD or VSS VS to VD Digital Inputs Peak Current, Sx or Dx Pins Continuous Current, Sx or Dx Pins Digital Output Operating Temperature Range Storage Temperature Range Junction Temperature Thermal Impedance, θJA (4-Layer Board) 16-Lead TTSOP 16-Lead LFSCP Reflow Soldering Peak Temperature, Pb Free ESD (HBM: ANSI/ESD STM5.1-2007) I/O Port to Supplies I/O Port to I/O Port All Other Pins 1 Rating 48 V −0.3 V to +48 V −48 V to +0.3 V −55 V to +55 V 80 V 80 V GND − 0.7 V to +48 V or 30 mA, whichever occurs first 288 mA (pulsed at 1 ms, 10% duty cycle maximum) Data1 + 15% Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. Only one absolute maximum rating can be applied at any one time. ESD CAUTION GND − 0.7 V to 6 V or 30 mA, whichever occurs first −40°C to +125°C −65°C to +150°C 150°C 112.6°C/W 30.4°C/W As per JEDEC J-STD-020 5.5 kV 5.5 kV 3 kV See Table 5. Rev. B | Page 12 of 28 Data Sheet ADG5412BF/ADG5413BF VDD S1 1 VSS 4 GND 5 12 FF GND 3 S4 6 11 S3 S4 4 D4 7 10 D3 IN4 8 9 IN3 12 S2 ADG5412BF/ ADG5413BF TOP VIEW D4 5 12473-003 TOP VIEW (Not to Scale) VSS 2 11 VDD 10 FF 9 S3 NOTES 1. THE EXPOSED PAD IS INTERNALLY CONNECTED. FOR INCREASED RELIABILITY OF THE SOLDER JOINTS AND MAXIMUM THERMAL CAPABILITY, IT IS RECOMMENDED THAT THE PAD BE CONNECTED TO THE LOWEST SUPPLY VOLTAGE, VSS. 12473-104 S2 13 ADG5412BF/ ADG5413BF 13 D2 14 14 IN2 D2 S1 3 D3 8 IN2 15 IN3 7 16 2 16 D1 1 D1 IN4 6 IN1 15 IN1 PIN CONFIGURATION AND FUNCTION DESCRIPTIONS Figure 4. LFCSP Pin Configuration Figure 3. TSSOP Pin Configuration Table 7. Pin Function Descriptions Pin No. TSSOP LFCSP 1 15 2 16 3 1 4 2 5 3 6 4 7 5 8 6 9 7 10 8 11 9 12 10 13 14 15 16 11 12 13 14 EP Mnemonic IN1 D1 S1 VSS GND S4 D4 IN4 IN3 D3 S3 FF VDD S2 D2 IN2 Exposed Pad Description Logic Control Input. Overvoltage Protected Drain Terminal. This pin can be an input or an output. Overvoltage Protected Source Terminal. This pin can be an input or an output. Most Negative Power Supply Potential. Ground (0 V) Reference. Overvoltage Protected Source Terminal. This pin can be an input or an output. Overvoltage Protected Drain Terminal. This pin can be an input or an output. Logic Control Input. Logic Control Input. Overvoltage Protected Drain Terminal. This pin can be an input or an output. Overvoltage Protected Source Terminal. This pin can be an input or an output. Fault Flag Digital Output. This pin has a high output when the device is in normal operation or a low when a fault condition occurs on any of the Sx inputs. Most Positive Power Supply Potential. Overvoltage Protected Source Terminal. This pin can be an input or an output. Overvoltage Protected Drain Terminal. This pin can be an input or an output. Logic Control Input. The exposed pad is internally connected. For increased reliability of the solder joints and maximum thermal capability, it is recommended that the pad be connected to the lowest supply voltage, VSS. Table 8. ADG5412BF Truth Table INx 1 0 Switch Condition (S1 to S4) On Off Table 9. ADG5413BF Truth Table INx 0 1 S1, S4 Off On Switch Condition S2, S3 On Off Rev. B | Page 13 of 28 ADG5412BF/ADG5413BF Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS 25 VDD = +15V VSS = –15V TA = 25°C 35 VDD = +20V VSS = –20V VDD = +18V VSS = –18V 15 VDD = +16.5V VSS = –16.5V 30 ON RESISTANCE (Ω) 20 ON RESISTANCE (Ω) 40 VDD = +22V VSS = –22V VDD = +13.5V VSS = –13.5V 10 20 +125°C 15 +85°C 10 VDD = +15V VSS = –15V 5 25 +25°C –40°C –10 –5 0 5 10 15 20 25 VS, VD (V) 0 –15 –12 –9 –6 –3 0 3 6 9 Figure 5. RON as a Function of VS,VD (Dual-Supply) 40 VDD = +20V VSS = –20V TA = 25°C 35 30 ON RESISTANCE (Ω) ON RESISTANCE (Ω) VDD = 12V VSS = 0V VDD = 10.8V VSS = 0V 15 10 VDD = 13.2V VSS = 0V 5 25 20 +125°C 15 +85°C 10 +25°C 5 0 2 4 6 8 10 12 14 VS, VD (V) –40°C 0 –20 12473-005 0 –15 –10 –5 0 5 10 40 VDD = 12V VSS = 0V TA = 25°C 35 ON RESISTANCE (Ω) 30 VDD = 32.4V VSS = 0V 10 25 20 +125°C 15 +85°C 10 VDD = 39.6V VSS = 0V +25°C –40°C 5 0 0 5 10 15 20 25 30 35 VS, VD (V) 40 12473-006 ON RESISTANCE (Ω) VDD = 36V VSS = 0V 5 20 Figure 9. RON as a Function of VS,VD for Different Temperatures, ±20 V Dual-Supply 25 15 15 VS, VD (V) Figure 6. RON as a Function of VS,VD (12 V Single-Supply) 20 15 Figure 8. RON as a Function of VS,VD for Different Temperatures, ±15 V Dual-Supply 25 20 12 VS, VD (V) 12473-008 –15 Figure 7. RON as a Function of VS,VD (36 V Single-Supply) 0 0 2 4 6 8 10 12 VS, VD (V) Figure 10. RON as a Function of VS,VD for Different Temperatures, 12 V Single-Supply Rev. B | Page 14 of 28 12473-009 –20 12473-004 0 –25 12473-007 5 Data Sheet ADG5412BF/ADG5413BF 40 2 VDD = 36V VSS = 0V 35 1 0 LEAKAGE CURRENT (nA) 25 20 +125°C +85°C +25°C 0 4 8 12 16 20 24 28 32 36 –8 IS (OFF) + – IS (OFF) – + IS, ID (ON) + + 4 1 LEAKAGE CURRENT (nA) VDD = +15V VSS = –15V VBIAS = +10V/–10V –1 –2 –3 –4 –5 IS (OFF) + – IS (OFF) – + IS, ID (ON) + + –7 0 20 40 ID (OFF) + – ID (OFF) – + IS, ID (ON) – – 60 80 100 120 TEMPERATURE (°C) LEAKAGE CURRENT (nA) –8 –10 40 IS (OFF) + – IS (OFF) – + IS, ID (ON) + + 0 20 40 ID (OFF) + – ID (OFF) – + IS, ID (ON) – – 60 80 100 120 VDD = +15V VSS = –15V 60 80 –10 –15 –20 –25 –30 –35 VS = –30V VS = +30V VS = –55V VS = +55V –40 ID (OFF) + – ID (OFF) – + IS, ID (ON) – – –45 100 120 TEMPERATURE (°C) 12473-012 20 –8 0 –6 0 –6 –5 –4 –14 –4 5 –2 –12 120 Figure 15. Leakage Current vs. Temperature, 36 V Single-Supply 0 IS (OFF) + – IS (OFF) – + IS, ID (ON) + + 100 TEMPERATURE (°C) VDD = +20V VSS = –20V VBIAS = +15V/–15V 2 80 –2 –12 Figure 12. Leakage Current vs. Temperature, ±15 V Dual-Supply 4 60 0 –10 12473-011 –6 40 VDD = 36V VSS = 0V VBIAS = 1V/30V 2 0 20 Figure 14. Leakage Current vs. Temperature, 12 V Single-Supply 2 –8 0 ID (OFF) + – ID (OFF) – + IS, ID (ON) – – TEMPERATURE (°C) Figure 11. RON as a Function of VS,VD for Different Temperatures, 36 V Single-Supply LEAKAGE CURRENT (nA) –5 –7 VS, VD (V) LEAKAGE CURRENT (nA) –4 Figure 13. Leakage Current vs. Temperature, ±20 V Dual-Supply –50 0 20 40 60 80 100 120 TEMPERATURE (°C) Figure 16. Overvoltage Drain Leakage Current vs. Temperature, ±15 V Dual-Supply Rev. B | Page 15 of 28 12473-015 0 –3 –6 –40°C 5 –2 12473-013 10 VDD = 12V VSS = 0V VBIAS = 1V/10V –1 12473-014 15 12473-010 ON RESISTANCE (Ω) 30 ADG5412BF/ADG5413BF –20 OFF ISOLATION (dB) –10 –20 –30 –40 VS = –30V VS = +30V VS = –55V VS = +55V 0 20 –40 –60 –80 –100 40 60 80 100 120 TEMPERATURE (°C) –120 1k 12473-016 –50 –60 VDD = +15V VSS = –15V TA = 25°C 0 CROSSTALK (dB) –15 –20 –25 –30 VS = –30V VS = +30V VS = –55V VS = +55V 0 20 40 60 80 100 120 TEMPERATURE (°C) –60 –80 –120 10k 100k 1M 10M 100M 1G FREQUENCY (Hz) Figure 21. Crosstalk vs. Frequency, ±15 V Dual-Supply 100 VDD = 36V VSS = 0V 0 1G –40 Figure 18. Overvoltage Drain Leakage Current vs. Temperature, 12 V Single-Supply 5 100M –100 12473-017 LEAKAGE CURRENT (nA) –20 VDD = 12V VSS = 0V –10 –45 10M VDD = +15V VSS = –15V TA = 25°C 0 –40 1M Figure 20. Off Isolation vs. Frequency, ±15 V Dual-Supply 5 –35 100k FREQUENCY (Hz) Figure 17. Overvoltage Drain Leakage Current vs. Temperature, ±20 V Dual-Supply –5 10k 12473-019 0 LEAKAGE CURRENT (nA) 0 VDD = +20V VSS = –20V 12473-020 10 Data Sheet TA = 25°C 0 CHARGE INJECTION (pC) –10 –15 –20 VS = –38V VS = +38V VS = –40V VS = +55V –30 0 20 VDD = 12V VSS = 0V –200 –300 –400 VDD = 36V VSS = 0V –500 –600 –700 40 60 80 100 120 TEMPERATURE (°C) Figure 19. Overvoltage Drain Leakage Current vs. Temperature, 36 V Single-Supply –800 0 5 10 15 20 25 30 35 40 VS (V) Figure 22. Charge Injection vs. Source Voltage (VS), Single-Supply Rev. B | Page 16 of 28 12473-021 –25 12473-018 LEAKAGE CURRENT (nA) –100 –5 Data Sheet 100 ADG5412BF/ADG5413BF 0 TA = 25°C VDD = +15V VSS = –15V –100 –1.0 –1.5 BANDWIDTH (dB) –200 –300 –400 –500 –600 –15 –10 –5 0 5 10 15 –2.5 –3.0 –3.5 –4.5 20 VS (V) –5.0 10k 100k Figure 23. Charge Injection vs. Source Voltage (VS), Dual-Supply 0 480 460 1G tON (+12V) tON (±20V) tOFF (±15V) tON (+36V) tOFF (+12V) tOFF (±20V) tON (±15V) tOFF (+36V) 420 –60 TIME (ns) –80 400 380 –100 360 –120 100k 1M 10M 100M 1G FREQUENCY (Hz) 320 –40 12473-023 –140 10k 20 40 60 80 100 120 Figure 27. tON, tOFF Times vs. Temperature 0.9 THRESHOLD VOLTAGE, VT (V) LOAD = 10kΩ TA = 25°C 0.015 VDD = 12V, VSS = 0V, VS = 6V p-p 0.010 VDD = 15V, VSS = –15V, VS = 15V p-p 0.005 0 TEMPERATURE (°C) Figure 24. ACPSRR vs. Frequency, ±15 V Dual-Supply 0.020 –20 12473-026 340 VDD = 20V, VSS = –20V, VS = 20V p-p 0.8 0.7 0.6 0 0 5000 10000 15000 FREQUENCY (Hz) 20000 12473-024 VDD = 36V, VSS = 0V, VS = 18V p-p Figure 25. THD + N vs. Frequency, ±15 V Dual-Supply 0.5 –40 –20 0 20 40 60 80 100 TEMPERATURE (°C) Figure 28. Threshold Voltage (VT) vs. Temperature Rev. B | Page 17 of 28 120 12473-027 ACPSRR (dB) 100M 440 –40 THD + N (%) 10M Figure 26. Bandwidth vs. Frequency VDD = +15V VSS = –15V TA = 25°C WITH DECOUPLING CAPACITORS –20 1M FREQUENCY (Hz) 12473-025 –800 –20 –2.0 –4.0 VDD = +20V VSS = –20V –700 12473-022 CHARGE INJECTION (pC) VDD = +15V VSS = –15V TA = 25°C –0.5 0 ADG5412BF/ADG5413BF Data Sheet 24 TA = 25°C VDD = +10V VSS = –10V T SOURCE SIGNAL VOLTAGE (V p-p) 20 VDD DRAIN CH2 5.00V M200ns A CH2 T –10.00ns 16.1V 0 3 DRAIN VSS –16.1V 12473-029 SOURCE M200ns A CH2 T –10.00ns 10 Figure 31. Large Voltage Signal Tracking vs. Frequency T CH2 5.00V 1 FREQUENCY (MHz) Figure 29. Drain Output Response to Positive Overvoltage CH1 5.00V CH3 5.00V DISTORTIONLESS OPERATING REGION 8 4 12473-028 CH1 5.00V CH3 5.00V 12 Figure 30. Drain Output Response to Negative Overvoltage Rev. B | Page 18 of 28 100 12473-030 2 16 Data Sheet ADG5412BF/ADG5413BF TEST CIRCUITS IS Dx A RL 10kΩ |VS| > |VDD| OR |VSS| Dx IDS RON = V/IDS 12473-031 Sx VS ID Sx A 12473-034 V Figure 37. Switch Overvoltage Leakage Figure 32. On Resistance VDD = VSS = GND = 0V IS Sx Dx ID Sx A Dx A A VS VD RL 10kΩ VS 12473-035 A ID (OFF) 12473-032 IS (OFF) Figure 38. Switch Unpowered Leakage Figure 33. Off Leakage ID (ON) Dx NC = NO CONNECT A VD 12473-033 Sx NC Figure 34. On Leakage VDD 0.1µF VDD VSS 0.1µF 0.1µF NETWORK ANALYZER VSS Sx VDD 50Ω INx Sx VS VIN RL 50Ω GND VS Dx VOUT VIN RL 50Ω GND OFF ISOLATION = 20 log VOUT VS INSERTION LOSS = 20 log VDD VDD VSS VSS NETWORK ANALYZER S1 0.1µF RL 50Ω VDD Sx VS V p-p INx S2 CHANNEL-TO-CHANNEL CROSSTALK = 20 log RS VOUT Dx GND AUDIO PRECISION VSS Dx VIN VS VOUT VS GND RL 10kΩ 12473-045 RL 50Ω VOUT WITH SWITCH VOUT WITHOUT SWITCH VSS 0.1µF 0.1µF VDD VOUT Figure 39. Bandwidth Figure 35. Off Isolation 0.1µF 50Ω INx 12473-044 Dx NETWORK ANALYZER VSS 12473-046 VSS Figure 36. Channel-to-Channel Crosstalk Figure 40. THD + N Rev. B | Page 19 of 28 VOUT 12473-047 VDD 0.1µF ADG5412BF/ADG5413BF Data Sheet VDD VSS 0.1µF 0.1µF VDD + 0.5V VDD SOURCE VOLTAGE (VS) VSS S1 VD D1 CL* 2pF VS 0V ADG5412BF/ ADG5413BF tRESPONSE VDD – 1V RL 1kΩ S2 TO S4 OUTPUT (VD) 12473-036 GND 0V *INCLUDES TRACK CAPACITANCE Figure 41. Overvoltage Response Time, tRESPONSE VDD VSS 0.1µF 0.1µF VDD + 0.5V VDD SOURCE VOLTAGE (VS) 0V VSS S1 VD D1 CL* 2pF VS ADG5412BF/ ADG5413BF tRECOVERY RL 1kΩ S2 TO S4 OUTPUT (VD) 1V 0V 12473-037 GND *INCLUDES TRACK CAPACITANCE Figure 42. Overvoltage Recovery Time, tRECOVERY VDD VSS 0.1µF 0.1µF VDD + 0.5V VDD SOURCE VOLTAGE (VS) VSS S1 VS 0V D1 S2 TO S4 ADG5412BF/ ADG5413BF tDIGRESP FF OUTPUT (VFF) GND 0.1VOUT *INCLUDES TRACK CAPACITANCE Figure 43. Interrupt Flag Response Time, tDIGRESP Rev. B | Page 20 of 28 12473-038 0V CL* 12pF Data Sheet ADG5412BF/ADG5413BF VDD VSS 0.1µF 0.1µF VDD + 0.5V VDD SOURCE VOLTAGE (VS) VSS S1 D1 VS S2 TO S4 0V ADG5412BF/ ADG5413BF FF tDIGREC CL* 12pF 0.9VOUT OUTPUT (VFF) 0V *INCLUDES TRACK CAPACITANCE 12473-039 GND Figure 44. Interrupt Flag Recovery Time, tDIGREC VDD VSS 0.1µF 0.1µF VDD + 0.5V VDD SOURCE VOLTAGE (VS) VSS S1 VS D1 S2 TO S4 0V 5V ADG5412BF/ ADG5413BF tDIGREC RPULLUP 1kΩ OUTPUT FF 5V CL* 12pF 3V GND 0V 12473-040 OUTPUT (VFF) *INCLUDES TRACK CAPACITANCE Figure 45. Interrupt Flag Recovery Time, tDIGREC, with a 1 kΩ Pull-Up Resistor VDD VSS VSS D1 S2 VS2 D2 RL 300Ω IN1, IN2 VOUT2 RL 300Ω CL 35pF VOUT1 CL 35pF VOUT1 VOUT2 ADG5413BF 50% 0V 90% 90% 0V 90% 90% 0V GND tD Figure 46. Break-Before-Make Time Delay, tD Rev. B | Page 21 of 28 50% tD 12473-041 VDD S1 VS1 VIN 0.1µF 0.1µF ADG5412BF/ADG5413BF Data Sheet VDD VSS ADG5412BF/ ADG5413BF 0.1µF 0.1µF VIN Sx VS 50% 50% VSS VOUT Dx RL 300Ω INx CL 35pF 90% VOUT 10% GND 12473-042 VDD tOFF tON Figure 47. Switching Times, tON and tOFF RS VS VDD VSS VDD VSS Sx Dx 0.1µF ADG5412BF/ ADG5413BF VOUT VIN OFF ON CL 1nF INx VOUT QINJ = CL × ∆VOUT GND Figure 48. Charge Injection, QINJ Rev. B | Page 22 of 28 ∆VOUT 12473-043 0.1µF Data Sheet ADG5412BF/ADG5413BF TERMINOLOGY tOFF tOFF represents the delay between applying the digital control input and the output switching off (see Figure 47). IDD IDD represents the positive supply current. ISS ISS represents the negative supply current. VD, VS VD and VS represent the analog voltage on the Dx pins and the Sx pins, respectively. RON RON represents the ohmic resistance between the Dx pins and the Sx pins. ΔRON ΔRON represents the difference between the RON of any two channels. RFLAT(ON) RFLAT(ON) is the flatness that is defined as the difference between the maximum and minimum value of on resistance measured over the specified analog signal range. IS (Off) IS (Off) is the source leakage current with the switch off. tD tD represents the off time measured between the 90% point of both switches when switching from one address state to another. tDIGRESP tDIGRESP is the time required for the FF pin to go low (0.3 V), measured with respect to voltage on the source pin exceeding the supply voltage by 0.5 V. tDIGREC tDIGREC is the time required for the FF pin to return high (3 V), measured with respect to voltage on the Sx pin falling below the supply voltage plus 0.5 V. tRESPONSE tRESPONSE represents the delay between the source voltage exceeding the supply voltage by 0.5 V and the drain voltage falling to 90% of the supply voltage. ID (Off) ID (Off) is the drain leakage current with the switch off. tRECOVERY tRECOVERY represents the delay between an overvoltage on the Sx pin falling below the supply voltage plus 0.5 V and the drain voltage rising from 0 V to 10% of the supply voltage. ID (On), IS (On) ID (On) and IS (On) represent the channel leakage currents with the switch on. Off Isolation Off isolation is a measure of unwanted signal coupling through an off switch. VINL VINL is the maximum input voltage for Logic 0. Charge Injection Charge injection is a measure of the glitch impulse transferred from the digital input to the analog output during switching. VINH VINH is the minimum input voltage for Logic 1. Channel-to-Channel Crosstalk Crosstalk is a measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. IINL, IINH IINL and IINH represent the low and high input currents of the digital inputs. CD (Off) CD (Off) represents the off switch drain capacitance, which is measured with reference to ground. CS (Off) CS (Off) represents the off switch source capacitance, which is measured with reference to ground. CD (On), CS (On) CD (On) and CS (On) represent on switch capacitances, which are measured with reference to ground. −3 dB Bandwidth Bandwidth is the frequency at which the output is attenuated by 3 dB. On Response On response is the frequency response of the on switch. Insertion Loss Insertion loss is the loss due to the on resistance of the switch. Total Harmonic Distortion Plus Noise (THD + N) THD + N is the ratio of the harmonic amplitude plus noise of the signal to the fundamental. CIN CIN is the digital input capacitance. tON tON represents the delay between applying the digital control input and the output switching on (see Figure 47). Rev. B | Page 23 of 28 ADG5412BF/ADG5413BF Data Sheet AC Power Supply Rejection Ratio (ACPSRR) ACPSRR is the ratio of the amplitude of signal on the output to the amplitude of the modulation. ACPSRR is a measure of the ability of the device to avoid coupling noise and spurious signals that appear on the supply voltage pin to the output of the switch. The dc voltage on the device is modulated by a sine wave of 0.62 V p-p. VT VT is the voltage threshold at which the overvoltage protection circuitry engages. See Figure 28. Rev. B | Page 24 of 28 Data Sheet ADG5412BF/ADG5413BF THEORY OF OPERATION SWITCH ARCHITECTURE Each channel of the ADG5412BF/ADG5413BF consists of a parallel pair of N-channel diffused metal-oxide semiconductor (NDMOS) and P-channel DMOS (PDMOS) transistors. This construction provides excellent performance across the signal range. The ADG5412BF/ADG5413BF channels operate as standard switches when input signals with a voltage between VSS and VDD are applied. For example, the on resistance is 10 Ω typically and the appropriate control pin, INx, controls the opening or closing of the switch. Additional internal circuitry enables the switch to detect overvoltage inputs by comparing the voltage on the source or drain pin with VDD and VSS. A signal is considered overvoltage if it exceeds the supply voltages by the voltage threshold, VT. The threshold voltage is typically 0.7 V, but can range from 0.8 V (when operating at −40°C) down to 0.6 V at +125°C. See Figure 28 to see the change in VT with operating temperature. The maximum voltage that can be applied to any switch input is +55 V or −55 V. When the device is powered using the singlesupply of 25 V or greater, the maximum signal level reduces from −55 V to −40 V at VDD = 40 V to remain within the 80 V maximum rating. Construction of the process allows the channel to withstand 80 V across the switch when it is opened. These overvoltage limits apply whether the power supplies are present or not. ESD Performance The ADG5412BF/ADG5413BF has an ESD rating of 3 kV for the human body model (HBM). ESD protection cells allow the voltage at the pins to exceed the supply voltage. See Figure 49 for a switch channel overview. Trench Isolation In the ADG5412BF and ADG5413BF, an insulating oxide layer (trench) is placed between the NDMOS and the PDMOS transistors of each switch. Parasitic junctions, which occur between the transistors in junction-isolated switches, are eliminated, and the result is a switch that is latch-up immune under all circumstances. These devices pass a JESD78D latch-up test of ±500 mA for 1 sec, which is the harshest test in the specification. Dx SWITCH DRIVER P-WELL N-WELL FAULT DETECTOR TRENCH 12473-048 AND INx PDMOS ESD PROTECTION Sx FAULT DETECTOR NDMOS BURIED OXIDE LAYER Figure 49. Switch Channel and Control Function HANDLE WAFER When an overvoltage condition is detected on either the source pin or drain pin, the switch is automatically opened regardless of the digital logic state, INx. The source and drain pins both become high impedance and ensure that no current flows through the switch. In Figure 29, the voltage on the drain pin can be seen to follow the voltage on the source pin until the switch has turned off completely and the drain voltage discharges through the load. The maximum voltage and the rate at which the output voltage discharges is dependent on the load at the pin. The ADG5412F/ ADG5413F are pin-compatible devices that are overvoltage protected on the source pin only, with ESD diodes on the drain pin that limit the maximum voltage while the switch is opening. Rev. B | Page 25 of 28 Figure 50. Trench Isolation 12473-049 ESD PROTECTION During overvoltage conditions, the leakage current into and out of the switch pins is limited to tens of microamperes. This limit protects the switch and connected circuitry from over stresses as well as restricting the current drawn from the signal source. When an overvoltage event occurs, the channels undisturbed by the overvoltage input continue to operate normally without additional crosstalk. ADG5412BF/ADG5413BF Data Sheet FAULT PROTECTION When the voltages at the switch inputs exceed VDD or VSS by VT, the switch turns off or, if the device is unpowered, the switch remains off. The switch input remains high impedance regardless of the digital input state or the load resistance, and the output acts as a virtual open circuit. Signal levels up to +55 V and −55 V are blocked in both the powered and unpowered condition as long as the 80 V limitation between the switch and supply pins is met. +22V 0V –22V VDD GND VSS ADG5413BF ‒55V +55V S1 D1 S2 D2 S3 D3 S4 D4 FAULT DETECTION + SWITCH DRIVER Power-On Protection The following three conditions must be satisfied for the switch to be in the on condition: 5V VDD to VSS ≥ 8 V Input signal is between VSS − VT and VDD + VT Digital logic control input, INx, is turned on IN1 IN2 IN3 IN4 FF 0V 12473-050 +22V Figure 51. ADG5413BF in Multiplexer Configuration under Overvoltage Conditions When the switch is turned on, signal levels up to the supply rails are passed. The switch responds to an analog input that exceeds VDD or VSS by a threshold voltage, VT, by turning off. The absolute input voltage limits are −55 V and +55 V, while maintaining an 80 V limit between the source pin and the supply rails. The switch remains off until the voltage at the switch pin returns to between VDD and VSS. The fault response time (tRESPONSE) when powered by ±15 V dual-supply is typically 460 ns, and the fault recovery time (tRECOVERY) is 720 ns. These vary with supply voltages and output load conditions. Exceeding ±55 V on any switch input may damage the ESD protection circuitry on the device. The maximum stress across the switch channel is 80 V; therefore, the user must pay close attention to this limit if using the device in a multiplexed configuration and one channel is on while another channel is in a fault condition. Power-Off Protection When no power supplies are present, the switch remains in the off condition, and the switch inputs are high impedance. This state ensures that no current flows and prevents damage to the switch or downstream circuitry. The switch output is a virtual open circuit. The switch remains off regardless of whether the VDD and VSS supplies are 0 V or floating. A GND reference must always be present to ensure proper operation. Signal levels of up to ±55 V are blocked in the unpowered condition. Digital Input Protection The ADG5412BF and the ADG5413BF can tolerate digital input signals being present on the device without power. When the device is unpowered, the switch is guaranteed to be in the off state, regardless of the state of the digital logic signals. The digital inputs are protected against positive faults up to 44 V. The digital inputs do not offer protection against negative overvoltages. ESD protection diodes connected to GND are present on the digital inputs. For example, consider the case where the device is set up in a multiplexer configuration as shown in Figure 51. Overvoltage Interrupt Flag The voltages on the switch inputs of the ADG5412BF and the ADG5413BF are continuously monitored and the state of the switch is indicated by an active low digital output pin, FF. VDD/VSS = ±22 V, S1 = 22 V, all switches are on D1 is externally multiplexed with D2; therefore, D1 and D2 = 22 V S2 has a −55 V fault and S3 has a +55 V fault The voltage between S2 and D1 or between S2 and D2 = +22 V − (−55 V) = +77 V The voltage between S3 and D3 = 55 V− 0 V = 55 V The voltage on the FF pin indicates if any of the switch input pins are experiencing a fault condition. The output of the FF pin is a nominal 3 V when all switch pins are within normal operating range. If any switch pin voltage exceeds the supply voltage by VT, the FF output reduces to below 0.8 V. These calculations are all within device specifications: 55 V maximum fault on switch inputs and a maximum of 80 V across the off switch channel. Rev. B | Page 26 of 28 Data Sheet ADG5412BF/ADG5413BF APPLICATIONS INFORMATION The overvoltage protected family of switches and multiplexers provide a robust solution for instrumentation, industrial, aerospace, and other harsh environments where overvoltage signals can be present and the system must remain operational both during and after the overvoltage has occurred. POWER SUPPLY RAILS To guarantee correct operation of the device, 0.1 μF decoupling capacitors are required. The ADG5412BF and the ADG5413BF can operate with bipolar supplies between ±5 V and ±22 V. The supplies on VDD and VSS need not be symmetrical but the VDD to VSS range must not exceed 44 V. The ADG5412BF and the ADG5413BF can also operate with single supplies between 8 V and 44 V with VSS connected to GND. These devices are fully specified at ±15 V, ±20 V, +12 V, and +36 V supply ranges. The ADG5412BF/ADG5413BF enable the designer to remove these resistors and retain the precision performance without compromising the protection of the circuit. HIGH VOLTAGE SURGE SUPPRESSION The ADG5412BF/ADG5413BF is not intended for use in very high voltage applications. The maximum operating voltage of the transistor is 80 V. In applications where the inputs are likely to be subject to overvoltages exceeding the breakdown voltage, use transient voltage suppressors (TVSs), or similar. INTELLIGENT FAULT DETECTION The ADG5412BF/ADG5413BF digital output pin, FF, can interface with a microprocessor or control system and be used as an interrupt flag. This feature provides real-time diagnostic information on the state of the device and the system to which it connects. The control system can use the digital interrupt to start a variety of actions, such as POWER SUPPLY SEQUENCING PROTECTION The switch channel remains open when the device is unpowered and signals from −55 V to +55 V can be applied without damaging the device. Only when the supplies are connected and a suitable digital control signal is placed on the INx pin does the switch channel close and then allow a signal to pass. Placing the ADG5412BF/ADG5413BF between external connectors and sensitive components offers protection in systems where a signal is presented to the switch pins before the supply voltages are available. SIGNAL RANGE The ADG5412BF/ADG5413BF switches have fault detection circuitry on their inputs that compares the voltage levels at the switch terminals with VDD and VSS, relative to ground. To protect downstream circuitry from overvoltages, supply the ADG5412BF/ ADG5413BF by voltages that match the intended signal range. The low on-resistance switch allows signals up to the supply rails to be passed with very little distortion. A signal that exceeds the supply rail by the threshold voltage is then blocked. This offers protection to both the device and any downstream circuitry. LOW IMPEDANCE CHANNEL PROTECTION The ADG5412BF/ADG5413BF can be used as protective elements in signal chains that are sensitive to both channel impedance and overvoltage signals. Traditionally, series resistors are used to limit the current during an overvoltage condition to protect susceptible components. These series resistors affect the performance of the signal chain and reduce the precision that can be reached. A compromise must be reached on the value of the series resistance that is high enough to sufficiently protect sensitive components but low enough that the precision performance of the signal chain is not sacrificed. Initiating investigation into the source of the overvoltage fault Shutting down critical systems in response to the overvoltage Data recorders marking data during these events as unreliable or out of specification For systems that are sensitive during a start-up sequence, the active low operation of the flag allows the system to ensure that the ADG5412BF/ADG5413BF are powered on and that all input voltages are within normal operating range before initiating operation. The FF pin is a weak pull-up, which allows the signals to be combined into a single interrupt for larger modules that contain multiple devices. The recovery time, tDIGREC, can be decreased from a typical 60 μs to 600 ns by using a 1 kΩ pull-up resistor. LARGE VOLTAGE, HIGH FREQUENCY SIGNALS Figure 31 illustrates the voltage range and frequencies that the ADG5412BF/ADG5413BF can reliably convey. For signals that extend across the full signal range from VSS to VDD, keep the frequency below 3 MHz. If the required frequency is greater than 3 MHz, decrease the signal voltage appropriately to ensure signal integrity. Rev. B | Page 27 of 28 ADG5412BF/ADG5413BF Data Sheet OUTLINE DIMENSIONS 5.10 5.00 4.90 16 9 4.50 4.40 4.30 6.40 BSC 1 8 PIN 1 1.20 MAX 0.15 0.05 0.30 0.19 0.65 BSC COPLANARITY 0.10 0.20 0.09 0.75 0.60 0.45 8° 0° SEATING PLANE COMPLIANT TO JEDEC STANDARDS MO-153-AB Figure 52. 16-Lead Thin Shrink Small Outline Package [TSSOP] (RU-16) Dimensions shown in millimeters 4.10 4.00 SQ 3.90 PIN 1 INDICATOR 0.35 0.30 0.25 0.65 BSC 16 13 PIN 1 INDICATOR 12 1 EXPOSED PAD 2.70 2.60 SQ 2.50 4 9 0.80 0.75 0.70 0.45 0.40 0.35 8 0.05 MAX 0.02 NOM COPLANARITY 0.08 0.20 REF SEATING PLANE 5 BOTTOM VIEW 0.20 MIN FOR PROPER CONNECTION OF THE EXPOSED PAD, REFER TO THE PIN CONFIGURATION AND FUNCTION DESCRIPTIONS SECTION OF THIS DATA SHEET. COMPLIANT TO JEDEC STANDARDS MO-220-WGGC. 08-16-2010-C TOP VIEW Figure 53. 16-Lead Lead Frame Chip Scale Package [LFCSP_WQ] 4 mm × 4 mm Body, Very Very Thin Quad (CP-16-17) Dimensions shown in millimeters ORDERING GUIDE Model1 ADG5412BFBRUZ ADG5412BFBRUZ-RL7 ADG5412BFBCPZ-RL7 EVAL-ADG5412BFEBZ ADG5413BFBRUZ ADG5413BFBRUZ-RL7 ADG5413BFBCPZ-RL7 1 Temperature Range −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C −40°C to +125°C Package Description 16-Lead Thin Shrink Small Outline Package [TSSOP] 16-Lead Thin Shrink Small Outline Package [TSSOP] 16-Lead Lead Frame Chip Scale Package [LFCSP_WQ] Evaluation Board 16-Lead Thin Shrink Small Outline Package [TSSOP] 16-Lead Thin Shrink Small Outline Package [TSSOP] 16-Lead Lead Frame Chip Scale Package [LFCSP_WQ] Z = RoHS Compliant Part. ©2014–2016 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D12473-0-1/16(B) Rev. B | Page 28 of 28 Package Option RU-16 RU-16 CP-16-17 RU-16 RU-16 CP-16-17