UTC MPSA 44B NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=400V *Collector current up to 300mA *Complement to MPSA94 *Collector Dissipation: Pc(max)=625mW 1 TO-92 1: BASE 2: EMITTER 3: COLLECTOR *Pb-free plating product number: MPSA44BL ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL Collector-base voltage VCBO Collector-emitter voltage VCEO Emitter-base voltage VEBO Collector dissipation(Ta=25℃) Pc Collector dissipation(Tc=25℃) Pc Collector current Ic Junction Temperature Tj Storage Temperature Tstg RATINGS 500 400 6 625 1.5 300 150 -55 ~ +150 UNIT V V V mW W mA ℃ ℃ ELECTRICAL CHARACTERISTICS (Tj=25℃,unless otherwise specified) PARAMETER Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain(note) SYMBOL BVCBO BVCEO BVEBO ICBO ICES IEBO hFE Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage Current gain bandwidth product Output capacitance VBE(sat) fT Cob UTC TEST CONDITIONS Ic=100µA, IB=0 Ic=1mA, IB=0 IE=100µA, Ic=0 VCB=400V,IE=0 VCE=400V,IB=0 VEB=4V,Ic=0 VCE=10V, Ic=1mA VCE=10V, Ic=10mA VCE=10V, Ic=50mA VCE=10V, Ic=100mA Ic=1mA, IB=0.1mA Ic=10mA, IB=1mA Ic=50mA, IB=5mA Ic=10mA, IB=1mA VCE=20V, Ic=10mA, f=100MHz VCB=20V, IE=0, f=1MHz UNISONIC TECHNOLOGIES CO. LTD www.unisonic.com.tw MIN 500 400 6 TYP MAX 0.1 0.5 0.1 40 50 45 40 UNIT V V V µA µA µA 240 0.4 0.5 0.75 0.75 50 7 V V MHz pF 1 QW-R201-079,B UTC MPSA 44B NPN EPITAXIAL SILICON TRANSISTOR Note: Pulse test:PW<300µs,Duty Cycle<2% TYPICAL CHARACTERISTIC CURVES Fig.2 Turn-on switching times 1 10 VCE=10V 80 60 40 Time (µs) 120 100 0 10 20 -20 1 10 2 10 3 10 Td -1 10 0 10 4 10 Ts 0 10 Tf 1 10 1 10 2 10 Collector current, Ic (mA) Fig.4 Capacitance Fig.5 ON Voltage Fig.6 Collector saturation region 2 10 1 10 voltage (V) Cib 0.5 Ta=25℃ 0.8 VBE(sat),Ic/IB=10 0.6 VBE(ON),VCE=10V 0.4 Cob VCE(sat),Ic/IB=10 0.2 0 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 Collector current,Ic (mA) Fig.7 High Frequency current gain Fig.8 Safe operating area 4 10 1 10 2 10 Collector current, Ic (mA) UTC 3 10 0.1 Ta=25℃ 1 10 2 10 3 10 4 10 5 10 base current, Ib (µA) 1ms 3 10 1s 2 10 3 10 0.1ms 1 10 0 10 MPSA44B 0 10 1 10 2 10 3 10 4 10 Collector voltage (V) UNISONIC TECHNOLOGIES CO. LTD www.unisonic.com.tw 0.2 5℃ 1 10 Ic=50mA 5℃ 0 10 Ic=10mA 0.3 =2 Tc 0 10 Ic=1mA Valid Duty Cycle<10% =2 Ta Collector current, Ic (mA) VCE=10V f=10MHz Ta=25℃ 0.4 0 3 10 Collector voltage(V) 2 10 -1 10 0 10 Collector current, Ic (mA) 1.0 0 10 -1 10 -1 10 2 10 Collector current, Ic (mA) 3 10 Capacitance (pF) 1 10 Collector-Emitter voltage (V) 0 10 -1 10 VCE=150V Ic/IB=10 Ta=25℃ Tf 0 -40 Small signal current gain, H FE Fig.3 Turn-off switching times 2 10 VCE=150V Ic/IB=10 Ta=25℃ VBE(OFF)=4V 140 Time (µs) DC current current gain, HFE Fig.1 DC current gain 2 QW-R201-079,B UTC MPSA 44B UTC NPN EPITAXIAL SILICON TRANSISTOR UNISONIC TECHNOLOGIES CO. LTD www.unisonic.com.tw 3 QW-R201-079,B UTC MPSA 44B NPN EPITAXIAL SILICON TRANSISTOR UT C assum es no responsibility for equipm ent failures that result from using products at v alues that exceed, ev en m om entarily, rated v alues (such as m ax im um ratings, operating condition ranges, or other param eters) listed in products specifications of any and all U TC products described or contained herein. UTC products are not designed for use in life support appliances, dev ices or system s where m alfunction of these products can be reasonably expected to result in personal injury. R eproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate and reliable and m ay be changed without notice. UTC UNISONIC TECHNOLOGIES CO. LTD www.unisonic.com.tw 4 QW-R201-079,B