DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 BST50; BST51; BST52 NPN Darlington transistors Product data sheet Supersedes data of 2001 Feb 20 2004 Dec 09 NXP Semiconductors Product data sheet NPN Darlington transistors BST50; BST51; BST52 FEATURES PINNING • High current (max. 0.5 A) PIN • Low voltage (max. 80 V) 1 emitter • Integrated diode and resistor. 2 collector 3 base DESCRIPTION APPLICATIONS • Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp driving. 2 3 DESCRIPTION NPN Darlington transistor in a SOT89 plastic package. PNP complements: BST60, BST61 and BST62. MARKING 3 TYPE NUMBER 2 1 sym080 MARKING CODE BST50 AS1 BST51 AS2 BST52 AS3 1 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME BST50 BST51 SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads BST52 2004 Dec 09 2 VERSION SOT89 NXP Semiconductors Product data sheet NPN Darlington transistors BST50; BST51; BST52 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCES PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BST50 − 60 V BST51 − 80 V BST52 − 90 V BST50 − 45 V BST51 − 60 V BST52 − 80 V − 5 V collector-emitter voltage VBE = 0 V VEBO emitter-base voltage open collector IC collector current (DC) − 1 A ICM peak collector current − 2 A IB base current (DC) − 100 mA Ptot total power dissipation − 1.3 W Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Tamb ≤ 25 °C; note 1 Note 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth(j-a) thermal resistance from junction to ambient note 1 Rth(j-s) thermal resistance from junction to soldering point VALUE UNIT 96 K/W 16 K/W Note 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. 2004 Dec 09 3 NXP Semiconductors Product data sheet NPN Darlington transistors BST50; BST51; BST52 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICES PARAMETER CONDITIONS MIN. TYP. MAX. UNIT collector-emitter cut-off current BST50 VBE = 0 V; VCE = 45 V − − 50 nA BST51 VBE = 0 V; VCE = 60 V − − 50 nA BST52 VBE = 0 V; VCE = 80 V − − 50 nA IEBO emitter-base cut-off current IC = 0 A; VEB = 4 V − − 50 nA hFE DC current gain VCE = 10 V; note 1; (see Fig.2) IC = 150 mA 1 000 − − IC = 500 mA 2 000 − − IC = 500 mA; IB = 0.5 mA − − 1.3 V IC = 500 mA; IB = 0.5 mA; Tj = 150 °C − − 1.3 V VCEsat collector-emitter saturation voltage VBEsat base-emitter saturation voltage IC = 500 mA; IB = 0.5 mA − − 1.9 V fT transition frequency IC = 500 mA; VCE = 5 V; f = 100 MHz − 200 − MHz − 400 − ns − 1 500 − ns Switching times (between 10% and 90% levels); (see Fig.3) ton turn-on time toff turn-off time ICon = 500 mA; IBon = 0.5 mA; IBoff = −0.5 mA Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2004 Dec 09 4 NXP Semiconductors Product data sheet NPN Darlington transistors BST50; BST51; BST52 MGD838 5000 handbook, full pagewidth hFE 4000 3000 2000 1000 0 10−1 102 10 1 VCE = 10 V. Fig.2 DC current gain; typical values. VBB andbook, full pagewidth VCC RB RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 10 V; T = 200 μs; tp = 6 μs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 10 kΩ; RB = 10 kΩ; RC = 18 Ω. VBB = −1.8 V; VCC = 10.7 V. Oscilloscope: input impedance Zi = 50 Ω. Fig.3 Test circuit for switching times. 2004 Dec 09 5 oscilloscope IC (mA) 103 NXP Semiconductors Product data sheet NPN Darlington transistors BST50; BST51; BST52 PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Dec 09 REFERENCES IEC JEDEC JEITA TO-243 SC-62 6 EUROPEAN PROJECTION ISSUE DATE 04-08-03 06-03-16 NXP Semiconductors Product data sheet NPN Darlington transistors BST50; BST51; BST52 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. General ⎯ Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. 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Export might require a prior authorization from national authorities. Quick reference data ⎯ The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications ⎯ Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values ⎯ Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 2004 Dec 09 7 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/05/pp8 Date of release: 2004 Dec 09 Document order number: 9397 750 13877