DMP2100U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Package V(BR)DSS RDS(ON) MAX -20V 38mΩ @ VGS = -10V 43mΩ @ VGS = -4.5V 75mΩ @ VGS = -2.5V SOT23 ID TA = +25°C -4.3A -4.0A -2.8A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management Applications Load Switch Power Management Functions Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data applications. Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.008 grams (approximate) Drain SOT23 D Gate S G ESD PROTECTED TO 3kV Gate Protection Diode Top View Internal Schematic Top View Source Equivalent Circuit Ordering Information (Note 4 & 5) Part Number DMP2100U-7 DMP2100UQ-7 Notes: Compliance Standard Automotive Case SOT23 SOT23 Packaging 3,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. 5. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. Marking Information Date Code Key Year Code Month Code 2008 V 2009 W Jan 1 Feb 2 DMP2100U Document number: DS35718 Rev. 6 - 2 2010 X Mar 3 2011 Y Apr 4 YM 35P 35P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: V = 2008) M = Month (ex: 9 = September) 2012 Z May 5 2013 A Jun 6 1 of 6 www.diodes.com 2014 B Jul 7 Aug 8 2015 C Sep 9 2016 D Oct O 2017 E Nov N 2018 F Dec D April 2013 © Diodes Incorporated DMP2100U Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage (Note 6) Continuous Drain Current (Note 8) VGS = -10V Steady State t<5s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Maximum Continuous Body Diodes Forward Current (Note 8) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) ID Value -20 ±10 -4.3 -3.4 Unit V V ID -5.5 -4.3 A IS IDM -2 -30 A A A Thermal Characteristics Characteristic Symbol TA = +25°C TA = +70°C Steady State t<5s TA = +25°C TA = +70°C Steady State t<5s Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Total Power Dissipation (Note 8) Thermal Resistance, Junction to Ambient (Note 8) RθJC TJ, TSTG Value 0.8 0.5 161 96 1.3 0.8 99 60 15 -55 to +150 Test Condition PD RθJA PD RθJA Thermal Resistance, Junction to Case (Note 8) Operating and Storage Temperature Range Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 — — — — — — -1 ±10 V µA µA VGS = 0V, ID = -250µA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) RDS (ON) -1.4 38 43 75 — — mΩ |Yfs| — 25 29 37 47 3 V Static Drain-Source On-Resistance -0.3 — — — — — VDS = VGS, ID = -250µA VGS = -10V, ID = -3.5A VGS = -4.5V, ID = -3A VGS = -2.5V, ID = -1A VGS = -1.8V, ID = -0.5A VDS = -5V, ID = -4A Ciss Coss Crss Rg — — — — 216 90 24 250 — — — — pF pF pF Ω Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — 9.1 1.6 2.0 80 155 688 423 — — — — — — — nC nC nC ns ns ns ns Forward Transfer Admittance DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistnace SWITCHING CHARACTERISTICS (Note 10) Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: S VDS = -15V, VGS = 0V f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz VGS = -4.5V, VDS = -10V ID = -4A VDS = -10V, VGS = -4.5V, RD = 2.5Ω, RG = 3.0Ω 6. AEC-Q101 VGS maximum is ±9.6V 7. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 8. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMP2100U Document number: DS35718 Rev. 6 - 2 2 of 6 www.diodes.com April 2013 © Diodes Incorporated DMP2100U 20 VGS = 2.5V 16 16 VGS = 2.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 20 VGS = 4.5V VGS = 3.5V VGS = 3.0V 12 8 VGS = 1.5V VDS = 5V 12 8 T A = 150°C 4 4 TA = 125°C TA = 85°C TA = 25°C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0.08 0.07 0.06 0.05 VGS = 2.5V 0.04 VGS = 4.5V 0.03 0.02 0.01 0 0 4 8 12 16 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage RDSON, DRAIN-SOURCE ON-RESISTANCE () RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.2 VGS = 4.5V ID = 10A VGS = 2.5V ID = 5A 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Document number: DS35718 Rev. 6 - 2 2.5 0.08 0.07 VGS = 4.5V 0.06 TA = 150°C 0.05 TA = 125°C 0.04 TA = 85°C TA = 25°C 0.03 TA = -55°C 0.02 0.01 0 0 4 8 12 16 ID, DRAIN CURRENT (A) 20 0.08 0.07 0.06 VGS = 2.5V ID = 5A 0.05 0.04 0.03 VGS = 4.5V ID = 10A 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature Fig. 5 On-Resistance Variation with Temperature DMP2100U 1 1.5 2 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 1.4 0.8 0.5 20 1.6 1.0 T A = -55°C 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 3 of 6 www.diodes.com April 2013 © Diodes Incorporated DMP2100U 20 18 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 0.9 ID = 1mA 0.6 ID = 250µA 0.3 14 12 10 8 TA = 25°C 6 4 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 1.2 5.0 1,000 4.5 -VGS, GATE-SOURCE VOLTAGE (V) f = 1MHz CT, JUNCTION CAPACITANCE (pF) 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current Ciss 100 Coss Crss 4.0 3.5 VDS = -10V ID = -4A 3.0 2.5 2.0 1.5 1.0 0.5 10 0 5 10 15 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 0 20 0 1 2 3 4 5 6 7 8 9 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate-Charge Characteristics 10 r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 171°C/W D = 0.02 0.01 P(pk) D = 0.01 t1 t2 T J - T A = P * RJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 0.0001 DMP2100U Document number: DS35718 Rev. 6 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 April 2013 © Diodes Incorporated DMP2100U Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. SOT23 Min Max Typ 0.37 0.51 0.40 1.20 1.40 1.30 2.30 2.50 2.40 0.89 1.03 0.915 0.45 0.60 0.535 1.78 2.05 1.83 2.80 3.00 2.90 0.013 0.10 0.05 0.903 1.10 1.00 0.400 0.45 0.61 0.55 0.085 0.18 0.11 0° 8° All Dimensions in mm A Dim A B C D F G H J K K1 L M B C H K J M K1 F D L G Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E C X DMP2100U Document number: DS35718 Rev. 6 - 2 E 5 of 6 www.diodes.com April 2013 © Diodes Incorporated DMP2100U IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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