ACE3400 N-Channel Enhancement Mode MOSFET Description The ACE3400 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features 30V/5.4A, RDS(ON)=38mΩ@VGS=10V 30V/4.6A, RDS(ON)=42mΩ@VGS=4.5V 30V/3.8A, RDS(ON)=55mΩ@VGS=2.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID 4.5 A 3.5 Pulsed Drain Current IDM 25 A Continuous Source Current (Diode Conduction) IS 1.7 A Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature PD TJ 2.0 W 1.3 150 O C O C Storage Temperature Range TSTG -55/150 Thermal Resistance-Junction to Ambient RθJA 90 O C/W VER 1.4 1 ACE3400 N-Channel Enhancement Mode MOSFET Packaging Type SOT-23-3L 3 SOT-23-3L Description 1 Gate 2 Source 3 Drain 1 2 Ordering information ACE3400 XX + H Halogen - free Pb - free BM : SOT-23-3L Electrical Characteristics TA=25℃, unless otherwise noted Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Symbol Conditions Static Min. V(BR)DSS VGS=0V, ID=250 uA 30 VGS(th) IGSS VD=VGS, ID=250uA VDS=0V,VGS=±12V VDS=24V, VGS=1.0V VDS=24V, VGS=0V TJ=55℃ VDS≧4.5V, VGS=4.5V VGS=10V, ID=5.4A VGS=4.5V, ID=4.6A VGS=2.5V, ID=3.8A VDS=4.5V,ID=5.4A IS=1.7A, VGS=0V Dynamic 0.8 IDSS ID(ON) Drain-Source On-Resistance RDS(ON) Forward Transconductance Diode Forward Voltage Gfs VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Qg Qgs Qgd Ciss Coss VDS=15V, VGS=10V, ID=6.7A VDS=15, VGS=0V, f=1MHz Typ. Max. Unit V 1.6 ±100 1 10 10 nA uA A 0.030 0.038 0.034 0.042 0.040 0.055 12 0.8 1.2 10 1.6 3.2 450 240 Ω S V 18 nC pF VER 1.4 2 ACE3400 N-Channel Enhancement Mode MOSFET Reverse Transfer Capacitance Turn-On Time Turn-Off Time Crss 38 td(on) tr td(off) tf 7 10 20 11 VDD=15V, RL=15, ID=1.0A, VGEN=10V, RG=6Ω 15 20 40 20 nS Typical Performance Characteristics Output Characteristics VDS-Drain-to-Source Voltage (V) On-Resistance vs. Drain Current ID-Drain Current (A) Transfer Characteristics VGS-Gate-to-Source Voltage (V) Capacitance VDS-Drain-to-Source Voltage (V) VER 1.4 3 ACE3400 N-Channel Enhancement Mode MOSFET Typical Performance Characteristics Gate Charge Qg-Total Gate Charge (nC) Source-Drain Diode Forward Voltage VSD-Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature TJ-Junction Temperature (℃) On-Resistance vs. Gate-to-Source Voltage VGS-Gate-to-Source Voltage (V) VER 1.4 4 ACE3400 N-Channel Enhancement Mode MOSFET Typical Performance Characteristics Threshold Voltage TJ-Temperature(℃) Single Pulse Power Time (sec) Normalized Thermal Transient Impedance, Junction-to Foot Square Wave Pulse Duration VER 1.4 5 ACE3400 N-Channel Enhancement Mode MOSFET Packing Information SOT-23-3L VER 1.4 6 ACE3400 N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.4 7