GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK Power Gain, GPS (dB) 20 VG2S = 1 V VG2S = 0.5 V VG2S = 2 V ID = 10 mA 10 f = 900 MHz 5 Noise Figure, NF (dB) • LOW CRSS: 0.02 pF (TYP) NF 0 0 0 DESCRIPTION 5 10 Drain to Source Voltage, VDS (V) The NE251 is a dual gate GaAs FET designed to provide flexibility in its application as a mixer, AGC amplifier, or low noise amplifier. As an example, by shorting the second gate to the source, higher gain can be realized than with single gate MESFETs. This device is available in a mini-mold (surface mount) package. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOL PARAMETERS AND CONDITIONS NE25139 39 UNITS MIN NF Noise Figure at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz dB GPS Power Gain at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 900 MHz dB 16 Drain to Source Breakdown Voltage at VG1S = -4 V, VG2S = 0, ID = 10 µA V 13 mA 5 BVDSX IDSS Saturated Drain Current at VDS = 5 V, VG2S = 0 V, VG1S = 0 V TYP MAX 1.1 2.5 20 20 40 VG1S (OFF) Gate 1 to Source Cutoff Voltage at VDS = 5 V, VG2S = 0 V, ID = 100 µA V -3.5 VG2S (OFF) Gate 2 to Source Cutoff Voltage at VDS = 5 V, VG1S = 0 V, ID = 100 µA V -3.5 IG1SS Gate 1 Reverse Current at VDS = 0, VG1S = -4V, VG2S = 0 µA 10 IG2SS Gate 2 Reverse Current at VDS = 0, VG2S = -4V, VG1S = 0 µA 10 |YFS| Forward Transfer Admittance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1.0 kHz mS 18 25 35 CISS Input Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1 MHz pF 0.5 1.0 1.5 CRSS Reverse Transfer Capacitance at VDS = 5 V, VG2S = 1 V, ID = 10 mA, f = 1 MHz pF 0.02 0.03 California Eastern Laboratories NE25139 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) TYPICAL NOISE PARAMETERS (TA = 25°C) (VDS = 5 V, VG2S = 0 V, IDS = 10 mA) SYMBOLS PARAMETERS UNITS RATINGS FREQ. NFOPT GA VDS Drain to Source Voltage V 13 (GHz) (dB) (dB) MAG -4.5 0.5 0.9 18.5 0.9 18 1.9 0.9 1.2 16.0 0.82 28 1.2 1.5 1.5 14.6 0.71 45 0.9 Gate 1 to Source Voltage VG1S V Gate 2 to Source Voltage VG2S ID Drain Current PT Total Power Dissipation TCH TSTG V -4.5 ΓOPT ANG Rn/50 mA IDSS 2.0 1.9 12.5 0.55 75 0.67 mW 200 3.0 2.5 11.0 0.34 116 0.5 Channel Temperature °C 125 4.0 3.3 9.5 0.25 154 0.4 Storage Temperature °C -55 to +125 Note: 1. Operation in excess of anyone of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES (TA = 25 °C) TOTAL POWER DISSIPATION VS. AMBIENT TEMPERATURE DRAIN CURRENT vs. GATE 1 TO SOURCE VOLTAGE 30 VDS = 5V 200 Drain Current, ID (mA) Total Power Dissipation, PT (mW) 250 FREE AIR 150 100 50 0.5 V 10 0V -0.5 V 0 0 0 25 50 75 100 125 -2.0 -1.0 0 +1.0 Ambient Temperature, TA (°C) Gate 1 to Source Voltage, VG1S (V) FORWARD TRANSFER ADMITTANCE vs. GATE 1 TO SOURCE VOLTAGE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 30 Forward Transfer Admittance, |YFS| (mS) Forward Transfer Admittance, |YFS| (mS) VG2S = 1.0V 20 VDS = 5V f = 1kHz 20 VG2S = 1.0 10 0.5 V -0.5 V 0V 0 -2.0 -1.0 0 Gate 1 to Source Voltage, VG1S (V) +1.0 30 VDS = 5 V f = 1 kHz VG2S = 1.0 V 20 10 VG2S = 0.5 V 0 0 10 20 Drain Current, ID (mA) 30 NE25139 TYPICAL PERFORMANCE CURVES (TA = 25°C) INPUT CAPACITANCE vs. GATE 2 TO SOURCE VOLTAGE POWER GAIN AND NOISE FIGURE vs. GATE 2 TO SOURCE VOLTAGE 2.0 10 30 1 VDS = 5 V VG2S = 1 V ID = 10 mA f = 900 MHz VG2S = 1 V at ID = 10 mA 1 1.0 1 VG2S = 1 V at ID = 5 mA GPS 0 5 -15 NF -30 -45 0 -1.0 +1.0 -2.0 -1.0 0 +1.0 +2.0 Gate 2 to Source Voltage, VG2S (V) Gate 2 to Source Voltage, VG2S (V) Note: 1. Initial bias conditions. VG1S set to obtain specified drain current. Note: 1. Initial bias conditions. VG1S set to obtain specified drain current. POWER GAIN AND NOISE FIGURE vs. DRAIN CURRENT 10 25 VDS = 5 V VG2S = 1 V f = 900 MHz GPS 15 5 10 5 NF 0 0 0 5 Drain Current, ID (mA) 10 Noise Figure, NF (dB) 20 Power Gain, GP (dB) 0 -3.0 Noise Figure, NF (dB) 15 Power Gain, GP (dB) Input Capacitance, CISS (pF) VDS = 5 V f = 1kHz NE25139 NONLINEAR MODEL UNITS FOR MODEL PARAMETERS Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps FET NONLINEAR MODEL PARAMETERS(1) Parameters UGW FET1 100e-6 FET2 Parameters 100e-6 IDSOC FET1 FET2 0.07 0.07 NGF 4 4 RDB 1.0e9 1.0e9 IS 8.78e-10 8.78e-10 CBS 0.16e-12 0.16e-12 N 1.33 1.33 GDBM 0.005 0.005 RG 0 0 KDB 11.1 11.1 RD 0 0 VDSM 7.1e-11 7.1e-11 RS 0 0 GMMAXAC 0.0475 0.0875 RIS 0 0 GAMMAAC 0.0107 0.0051 0.0052 RID 0 0 KAPAAC 0.0001 TAU 5.17e-12 5.17e-12 PEFFAC 44.9 44.9 CDSO 1.19e-13 1.19e-13 VTOAC -1.584 -1.545 C11O 6.1e-13 6.1e-13 VTSOAC -100 -100 C11TH 1.6e-13 1.6e-13 VDELTAC 0.062 0.062 VINFL -1.1 -1.1 GMMAX 0.0554 0.0304 DELTGS 1.82 1.82 GAMMA 0.006 0.005 DELTDS 0.682 0.682 KAPA 0.046 0.0005 LAMBDA \0.036 0.036 PEFF 1.636 1.636 C11DELT 0 0 VTO -1.57 -1.5 C12O 0 0 VTSO -100 -10 C12SAT 6.81e-14 6.81e-14 VDELT 0.135 0.1 CGDSAT 6.81e-14 6.81e-14 VCH 1 1 KBK 0.03 0.03 VSAT 1.119 1.119 VBR 6.5 6.5 VGO -0.654 -0.0035 NBR 2 2 VDSO 3 10 (1) Libra EEFET3 Model NE25139 NONLINEAR MODEL SCHEMATIC PORT Pdrain port = 2 RES Rd R = 4.58 CAP Cg2d C = 0.15 PORT P1 port = 3 IND Lg2 L = 0.40 RES Rg2 R = 1.44 CAP C12 C = 0.32 CAP Cg1d C = 5.64e-03 PORT Pgate1 port = 1 IND Lg1 L = 1.65 RES Rg1 R = 1.52 CAP Cg1s C = 0.41 EEFET3 FET2 UGW=0 N=0 FILE = NE720_b.mdif MODE = nonlinear RES R12 R = 1.13 EEFET3 FET1 UGW=0 N=0 FILE = NE720_b.mdif MODE = nonlinear RES RDS R = 711 CAP CDS C = 7.60e-02 RES Rs R = 5.79 CAP Cg2s C = 0.39 IND Ls L = 1.78 UNITS Parameter capacitance inductance resistance Units picofarads nanohenries ohms NOTES: 1. This UGW value scales the model parameters on page 1. 2. This N value is the number of gate fingers and scales the model parameters on page 1. PORT P4 port = 4 MODEL RANGE Frequency: 0.1 to 4 GHz Bias: VDS = 5 V, Vg1s= -0.785 V, Vg2s= 0 V, ID = 10 mA NE25139 TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) +90˚ j50 +60˚ +120˚ j100 j150 +30˚ +150˚ j10 j250 0 10 25 10 S22 100 150 250 .1 GHz 50 S11 4 GHz -j10 S12 4 GHz S21 .1 GHz S12 .1 GHz 1.0 -j250 S22 4 GHz -j150 -j100 -j25 +180 ˚ – S11 .1 GHz Coordinates in Ohms Frequency in GHz (VDS = 5 V, VG2S = 0 V, IDS = 10 mA) .5 .10 .15 .20 1.5 -150˚ .25 0˚ -30˚ 2.0 S21 2.5 -120˚ -60˚ -90˚ -j50 NE25139 VDS = 5 V, VG2S = 0 V, IDS = 10 mA FREQUENCY (GHz) S11 S21 MAG 0.1 0.2 0.4 0.6 0.9 1.0 1.5 2.0 2.5 3.0 3.5 4.0 1.0 1.0 0.99 0.97 0.94 0.92 0.82 0.69 0.60 0.51 0.51 0.63 ANG -4 -8 -15 -23 -35 -39 -61 -86 -110 -131 -147 -167 S12 MAG ANG 1.96 1.92 1.91 1.90 1.90 1.90 1.88 1.52 1.41 1.39 1.37 1.20 174 169 158 148 132 126 99 71 45 19 -6 -47 MAG 0.001 0.001 0.001 0.002 0.004 0.004 0.006 0.008 0.012 0.023 0.039 0.042 S22 ANG 87 85 82 81 80 79 78 95 118 153 162 157 MAG 0.96 0.96 0.95 0.94 0.94 0.94 0.94 0.95 0.96 0.97 0.97 0.96 K ANG -1 -2 -3 -3 -4 -5 -6 -9 -12 -18 -27 -42 0.47 0.51 0.70 1.14 1.18 1.49 2.03 2.21 1.34 0.32 0.04 0.07 S21 MAG1 (dB) (dB) 5.8 5.7 5.6 5.6 5.6 5.6 5.5 3.6 3.0 2.9 2.1 1.6 32.9 32.8 32.8 27.5 24.2 22.6 19.2 16.6 17.2 17.8 15.1 14.6 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE25139 TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) +90˚ j50 j25 +60˚ +120˚ j100 S21 1.2 GHz j150 +30˚ +150˚ j10 j250 0 10 25 S22 100 150 250 .1 GHz 50 S22 4 GHz -j10 .5 .10 .15 .20 .25 0˚ 1.0 -j250 S11 4 GHz Coordinates in Ohms Frequency in GHz (VDS = 5 V, VG2S = 1 V, ID = 10 mA) -j150 -j100 -j25 +180 ˚ – S11 .1 GHz 1.5 -150˚ -30˚ 2.0 -120˚ S21 2.5 -60˚ -90˚ -j50 NE25139 VDS = 5 V, VG2S = 1 V, ID = 10 mA FREQUENCY S11 (GHz) MAG 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 .99 .99 .99 .98 .97 .97 .96 .95 .94 .92 .91 .88 S21 S12 S22 ANG MAG ANG MAG ANG -3 -7 -9 -13 -16 -19 -22 -25 -29 -29 -35 -35 2.36 2.39 2.31 2.23 2.42 2.30 2.33 2.23 2.45 2.30 2.35 2.37 177 169 164 160 158 150 146 142 137 131 126 124 .001 .001 .002 .002 .003 .003 .004 .005 .005 .006 .006 .006 87 85 82 82 81 81 80 79 79 78 78 78 MAG .97 .98 .98 .97 .99 .96 .99 .96 .99 .97 .98 .99 K S21 (dB) MAG1 (dB) 0.47 0.51 0.70 1.14 1.18 1.49 2.03 2.21 1.34 0.32 0.04 0.07 5.83 5.7 5.6 5.6 5.6 5.6 5.5 3.6 3.0 2.9 2.1 1.6 2.9 32.8 32.8 27.5 24.2 22.6 19.2 16.6 17.2 17.8 15.1 14.6 ANG -1 -3 -3 -6 -6 -8 -9 -9 -13 -11 -15 -13 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain, MSG = Maximum Stable Gain OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39 (SOT-143) +0.2 2.8 -0.3 +0.2 1.5 -0.1 2 2.9 ± 0.2 0.95 ORDERING INFORMATION +0.10 0.4 -0.05 (LEADS 2, 3, 4) 3 1.9 0.85 4 1 PIN CONNECTIONS 1. Source 2. Drain 3. Gate 2 1.1+0.2 -0.1 4. Gate 1 +0.10 0.6 -0.05 0.8 0.16 +0.10 -0.06 PART NUMBER AVAILABILITY IDSS RANGE (mA) NE25139 NE25139-T1 NE25139U71 NE25139T1U71 NE25139U72 NE25139T1U72 NE25139U73 NE25139T1U73 NE25139U74 NE25139T1U74 Bulk up to 3K 3K/Reel Bulk up to 3K 3K/Reel Bulk up to 3K 3K/Reel Bulk up to 3K 3K/Reel Bulk up to 3K 3K/Reel 5 - 40 5 - 40 5 - 15 5 - 15 10 - 25 10 - 25 20 - 35 20 - 35 30 - 40 30 - 40 MARKING U71 U71 U72 U72 U73 U73 U74 U74 5˚ 5˚ 0 to 0.1 Note: All dimensions are typical unless otherwise specified. 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