IRF IRH3054 Radiation hardened power mosfet thru-hole Datasheet

PD - 90883B
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (T0-204AA/AE)
IRH7054
60V, N-CHANNEL
®
™
RAD Hard HEXFET TECHNOLOGY
Product Summary
Part Number Radiation Level
IRH7054
100K Rads (Si)
IRH3054
300K Rads (Si)
IRH4054
600K Rads (Si)
IRH8054
1000K Rads (Si)
R DS(on)
0.025Ω
0.025Ω
0.025Ω
0.025Ω
ID
45*A
45*A
45*A
45*A
International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for
space applications. This technology has over a decade of proven performance and reliability in satellite
applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of electrical parameters.
TO-204AE
Features:
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Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ➁
Avalanche Current ➀
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Units
45*
32
210
150
1.2
±20
500
35
15
3.5
-55 to 150
A
W
W/°C
V
mJ
A
mJ
V/ns
o
300 ( 0.063 in.(1.6mm) from case for 10s)
11.5 (Typical )
C
g
For footnotes refer to the last page
*Current is limited by pin diameter
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1
8/9/01
IRH7054
Pre-Irradiation
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
g fs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Typ Max Units
60
—
—
V
—
0.053
—
V/°C
—
—
2.0
12
—
—
—
—
—
—
—
—
0.025
0.028
4.0
—
25
250
Ω
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
200
60
75
27
100
75
75
—
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 32A ➃
VGS = 12V, ID = 45A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 35A ➃
VDS= 48V ,VGS=0V
VDS = 48V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS =12V, ID = 35A
VDS = 30V
V
S( )
Ω
Electrical Characteristics
µA
nA
nC
VDD =30V, ID = 35A
VGS =12V, RG = 2.35Ω
ns
nH
Measured from Drain lead (6mm /0.25in from
package) to Source lead (6mm /0.25in. from
Package) with Source wires internally
bonded from Source Pin to Drain Pad
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
4100
2000
560
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
45
210
1.4
280
2.2
Test Conditions
A
V
nS
µC
Tj = 25°C, IS = 35A, VGS = 0V ➃
Tj = 25°C, IF = 35A, di/dt ≤ 100A/µs
VDD ≤ 50V ➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
R thJC
RthJA
RthCS
Junction-to-Case
Junction-to-Ambient
Case-to-Sink
Min Typ Max Units
—
—
—
— 0.83
—
30
0.12 —
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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Radiation Characteristics
Pre-Irradiation
IRH7054
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
BVDSS
V/5JD
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
100K Rads(Si)
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source" ➃
On-State Resistance (TO-3)
Static Drain-to-Source" ➃
On-State Resistance (TO-204AE)
Diode Forward Voltage" ➃
Min
Max
60
2.0
—
—
—
—
300 - 1000K Rads (Si)
U
nits
Units
Test Conditions
Min
Max
—
4.0
100
-100
25
0.027
60
1.25
—
—
—
—
—
4.5
100
-100
50
0.027
µA
Ω
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20 V
VDS=48V, VGS =0V
VGS = 12V, ID =45A
—
0.027
—
0.027
Ω
VGS = 12V, ID =45A
—
1.4
1.4
V
VGS = 0V, IS = 35A
—
V
nA
1. Part numbers IRH7054,
2. Part number IRH3054, IRH4540 and IRH8054
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
I
Br
LET
Energy
MeV/(mg/cm )) (MeV)
59.9
345
36.8
305
VDS(V)
Range
(µm)
32.8
39
@VGS=0V @VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V
60
60
45
40
30
40
35
30
25
20
70
60
VDS
50
40
BR
I
30
20
10
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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3
IRH7054
1000
Pre-Irradiation
1000
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
100
20µs PULSE WIDTH
TJ = 25 °C
5.0V
10
1
10
100
5.0V
10
1
VDS , Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
100
TJ = 150 ° C
V DS = 25V
20µs PULSE WIDTH
6
7
8
9
10
11
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
100
Fig 2. Typical Output Characteristics
1000
5
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
20µs PULSE WIDTH
TJ = 150 °C
12
ID = 52A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 12V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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Pre-Irradiation
8000
IRH7054
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
6000
Ciss
4000
Coss
2000
Crss
0
1
10
100
VDS = 48V
VDS = 30V
16
12
8
4
0
VDS , Drain-to-Source Voltage (V)
ID = 35A
FOR TEST CIRCUIT
SEE FIGURE 13
0
40
120
160
200
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
TJ = 25 ° C
100
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
80
QG , Total Gate Charge (nC)
TJ = 150 ° C
10
1
0.4
V GS = 0 V
1.0
1.6
2.2
2.8
3.4
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
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4.0
100
100us
1ms
10
1
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
5
IRH7054
Pre-Irradiation
60
VGS
50
ID , Drain Current (A)
RD
VDS
LIMITED BY PACKAGE
D.U.T.
RG
+
-VDD
40
VGS
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
Fig 10a. Switching Time Test Circuit
VDS
10
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
PDM
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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Pre-Irradiation
IRH7054
L
D.U.T
RG
V/5
20V
IAS
DRIVER
+
- VDD
0.01Ω
tp
TOP
1000
15V
VDS
EAS , Single Pulse Avalanche Energy (mJ)
1200
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
A
BOTTOM
ID
16A
22A
35A
800
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Current Regulator
Same Type as D.U.T.
Fig 12b. Unclamped Inductive Waveforms
50KΩ
QG
12V
.2µF
.3µF
12 V
QGS
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
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D.U.T.
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
7
IRH7054
Pre-Irradiation
Foot Notes:
➀ Repetitive Rating; Pulse width limited by
maximum junction temperature.
➁ VDD = 25V, starting TJ = 25°C, L=0.49mH
Peak IL = 35A, VGS =12V
➂ ISD ≤ 35A, di/dt ≤ 150A/µs,
VDD ≤ 60V, TJ ≤ 150°C
➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
➄ Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
➅ Total Dose Irradiation with V DS Bias.
48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — TO-204AE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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Data and specifications subject to change without notice. 08/01
8
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