PD - 91396C IRHNA7160 100V, N-CHANNEL RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) REF: MIL-PRF-19500/664 ® ™ RAD-Hard HEXFET MOSFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA7160 100K Rads (Si) IRHNA3160 300K Rads (Si) RDS(on) 0.04Ω 0.04Ω ID 51A 51A QPL Part Number JANSR2N7432U JANSF2N7432U IRHNA4160 0.04Ω 51A JANSG2N7432U 0.04Ω 51A JANSH2N7432U 600K Rads (Si) IRHNA8160 1000K Rads (Si) International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. SMD - 2 Features: n n n n n n n n n Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Current ➀ Repetitive Avalanche Energy ➀ Peak Diode Recovery dv/dt ➂ Operating Junction Storage Temperature Range Pckg. Mounting Surface Temp. Weight Units 51 32.5 204 300 2.4 ±20 500 51 30 7.3 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 ( for 5s) 3.3 (Typical) C g For footnotes refer to the last page www.irf.com 1 5/4/2000 IRHNA7160 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units BVDSS Drain-to-Source Breakdown Voltage ∆BV DSS/∆T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current 100 — — V — 0.11 — V/°C — — 2.0 16 — — — — — — — — 0.040 Ω 0.045 4.0 V — S( ) 25 µA 250 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (‘Miller’) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance — — — — — — — — — — — — — — — — — — — 4.0 100 -100 310 53 110 35 150 150 200 — Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance — — — 5300 1600 350 — — — Test Conditions VGS =0 V, ID = 1.0mA Reference to 25°C, ID = 1.0mA VGS = 12V, ID = 32.5A VGS = 12V, ID = 51A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 32.5A VDS= 80V,VGS=0V VDS = 80V VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS = 12V, ID = 51A VDS = 50V Ω nA nC VDD = 50V, ID = 51A, RG = 2.35Ω ns nH Measured from center of drain pad to center of source pad VGS = 0V, VDS = 25V f = 1.0MHz pF Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) ➀ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time — — — — — — — — — — 51 204 1.8 520 6.5 Test Conditions A V nS µC Tj = 25°C, IS = 51A, VGS = 0V ➃ Tj = 25°C, IF = 51A, di/dt ≥ 100A/µs VDD ≤ 25V ➃ Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJPCB Junction-to-Case Junction-to-PC Board Min Typ Max Units — — — 1.6 0.42 — °C/W Test Conditions Solder to a 1” sq. copper clad PC Board Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHNA7160 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads(Si)1 Drain-to-Source Breakdown Voltage Gate Threshold Voltage ➃ Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source ➃ On-State Resistance (TO-3) Static Drain-to-Source ➃ On-State Resistance (SMD-2) Diode Forward Voltage ➃ 600 to 1000K Rads (Si)2 Test Conditions Units Min Max Min Max 100 2.0 — — — — — 4.0 100 -100 25 0.045 100 1.25 — — — — — 4.5 100 -100 50 0.062 µA Ω — 0.04 — 0.057 Ω VGS = 12V, ID =32.5A — 1.8 — 1.8 V VGS = 0V, IS = 51A VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=80V, VGS =0V VGS = 12V, ID =32.5A V nA 1. Part number IRHNA7160 (JANSR2N7432U) 2. Part numbers IRHNA3160 (JANSF2N7432U), IRHNA4160 (JANSG2N7432U) and IRHNA8160 (JANSH2N7432U) International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Ion Cu Br LET MeV/(mg/cm2)) 28 36.8 Energy (MeV) 285 305 VDS(V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 43 100 100 100 80 60 39 100 90 70 50 — 120 100 VDS 80 Cu Br 60 40 20 0 0 -5 -10 -15 -20 -25 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHNA7160 Pre-Irradiation 1000 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 10 5.0V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 10 100 1 R DS(on) , Drain-to-Source On Resistance (Normalized) 3.0 TJ = 25 ° C 100 TJ = 150 ° C 10 V DS = 50V 20µs PULSE WIDTH 6 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 100 Fig 2. Typical Output Characteristics 1000 5 10 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 20µs PULSE WIDTH TJ = 150 °C 5.0V VDS , Drain-to-Source Voltage (V) I D , Drain-to-Source Current (A) VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP TOP 12 ID = 51A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 8000 6000 Ciss 4000 Coss 2000 20 VGS , Gate-to-Source Voltage (V) 10000 IRHNA7160 ID = 51A VDS = 80V VDS = 50V VDS = 20V 16 12 8 4 Crss 0 FOR TEST CIRCUIT SEE FIGURE 13 0 1 10 100 0 VDS , Drain-to-Source Voltage (V) 80 120 160 200 240 280 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 40 100 100 TJ = 150 ° C 10 100us 1ms 10 10ms TJ = 25 ° C 1 0.0 V GS = 0 V 0.5 1.0 1.5 2.0 2.5 3.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 3.5 TC = 25 ° C TJ = 150 ° C Single Pulse 1 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHNA7160 Pre-Irradiation 60 RD VDS 50 VGS D.U.T. I D , Drain Current (A) RG + -VDD 40 12V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 20 Fig 10a. Switching Time Test Circuit VDS 10 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.1 0.01 0.001 0.00001 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHNA7160 L D .U .T RG IA S 12V 20V D R IV E R + - VD D 0 .0 1 Ω tp TOP 1000 1 5V VD S EAS , Single Pulse Avalanche Energy (mJ) 1200 Fig 12a. Unclamped Inductive Test Circuit A BOTTOM 800 600 400 200 0 25 V (B R )D S S ID 23A 32A 51A 50 75 100 125 150 Starting TJ , Junction Temperature( °C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50KΩ QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHNA7160 Pre-Irradiation Foot Notes: ➀ Repetitive Rating; Pulse width limited by maximum junction temperature. ➁ VDD = 25V, starting TJ = 25°C, L= 0.38mH Peak IL = 51A, VGS = 12V ➂ ISD ≤51A, di/dt ≤ 410A/µs, VDD ≤ 100V, TJ ≤ 150°C ➃ Pulse width ≤ 300 µs; Duty Cycle ≤ 2% ➄ Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. ➅ Total Dose Irradiation with VDS Bias. 80 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions — SMD-2 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 5/00 8 www.irf.com