Renesas BCR5KM-12LB Triac medium power use Datasheet

BCR5KM-12LB
Triac
Medium Power Use
REJ03G0317-0200
Rev.2.00
Mar 06, 2007
Features
•
•
•
•
•
IT (RMS) : 5 A
VDRM : 600 V
IFGTI , IRGTI, IRGTIII : 20 mA (10 mA)Note5
Viso : 2000 V
The product guaranteed maximum junction
temperature 150°C.
• Insulated Type
• Planar Passivation Type
• Refer to the recommended circuit values around the
triac before using.
Outline
RENESAS Package code: PRSS0003AB-A
(Package name: TO-220FN)
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, small motor control, heater control, solenoid driver, and other general purpose control
applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Rev.2.00
Mar 06, 2007
page 1 of 7
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
BCR5KM-12LB
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
5
Unit
A
Surge on-state current
ITSM
50
A
I2 t
10.4
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
3
0.3
10
2
– 40 to +150
– 40 to +150
2.0
2000
W
W
V
A
°C
°C
g
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 121°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Gate trigger voltageNote2
Gate trigger currentNote2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2.
3.
4.
5.
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.8
Unit
mA
V
Test conditions
Tj = 150°C, VDRM applied
VFGTΙ
VRGTΙ
VRGTΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
VGD
Rth (j-c)
—
—
—
—
—
—
0.2/0.1
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
20Note5
20Note5
20Note5
—
3.8
V
V
V
mA
mA
mA
V
°C/W
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Tj = 125°C/150°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
5/1
—
—
V/µs
Tj = 125°C/150°C
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Measurement using the gate trigger characteristics measurement circuit.
The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
High sensitivity (IGT ≤ 10 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 2.5 A/ms
3. Peak off-state voltage
VD = 400 V
Rev.2.00
Tc = 25°C, ITM = 7 A,
Instantaneous measurement
Mar 06, 2007
page 2 of 7
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR5KM-12LB
Performance Curves
102
7
5
3
2
1
Tj = 150°C
0
10
7
5
3
2
Tj = 25°C
–1
60
50
40
30
20
10
2 3
5 7 10
1
2 3
5 7 10
Gate Characteristics (I, II and III)
Gate Trigger Current vs.
Junction Temperature
VGM = 10V
PGM = 3W
IGM = 2A
IGT = 20mA
10–1
VGD = 0.1V
7
5 1
2
10 2 3 5 710 2 3 5 7103 2 3 5 7104
Gate Trigger Current (Tj = t°C)
× 100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Voltage (V)
70
Conduction Time (Cycles at 60Hz)
1
Gate Trigger Voltage (Tj = t°C)
× 100 (%)
Gate Trigger Voltage (Tj = 25°C)
80
On-State Voltage (V)
10
7
PG(AV) =
5
0.3W
3 VGT = 1.5V
2
100
7
5
3
2
90
0 0
10
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
5
3
2
103
7
5
3
2
2
Typical Example
IRGT III
102
7
5
3
2 IFGT I
IRGT I
1
10
7
5
3
2
100
–60 –40–20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
103
7
5
Typical Example
3
2
102
7
5
3
2
1
10
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Rev.2.00
Surge On-State Current (A)
100
10
7
5
3
2
10
Rated Surge On-State Current
Mar 06, 2007
page 3 of 7
Transient Thermal Impedance (°C/W)
On-State Current (A)
Maximum On-State Characteristics
102 2 3 5 7103 2 3 5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0 –1
10 2 3 5 7100 2 3 5 7101 2 3 5 7102
Conduction Time (Cycles at 60Hz)
BCR5KM-12LB
Maximum On-State Power Dissipation
3
10
7
5
3
2
2
10
7
5
3
2
1
10
7
5
3
2
0
10
7
5
3
2
–1
10 1
10
2
3
On-State Power Dissipation (W)
No Fins
4
10 2 3 5 710 2 3 5 710 2 3 5 710 2 3 5 710
7
6
5
4
3
2
360° Conduction
Resistive,
inductive loads
1
1
2
3
4
5
6
7
8
9 10
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
140
140
120
Curves apply
100 regardless of
conduction angle
80
60
40
360° Conduction
inductive loads
0
0
1
2
3
120 × 120 × t2.3
100 × 100 × t2.3
120
60 × 60 × t2.3
100
80
All fins are black
60 painted aluminum
and greased
40 Curves apply regardless
of conduction angle
20 Resistive, inductive loads
Natural convection
4
5
6
7
0
0
8
1
2
3
4
5
6
7
8
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Repetitive Peak Off-State Current vs.
Junction Temperature
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
0.5
1.0
1.5
2.0
2.5
RMS On-State Current (A)
Mar 06, 2007
page 4 of 7
3.0
Repetitive Peak Off-State Current (Tj = t°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
RMS On-State Current (A)
160
Ambient Temperature (°C)
8
Conduction Time (Cycles at 60Hz)
20 Resistive,
Rev.2.00
9
0
0
5
Ambient Temperature (°C)
Case Temperature (°C)
Transient Thermal Impedance (°C/W)
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
6
10
7
5
3
2
5
10
7
5
3
2
4
10
7
5
3
2
3
10
7
5
3
2
2
10
Typical Example
–60 –40–20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
BCR5KM-12LB
Holding Current vs.
Junction Temperature
VD = 12V
Distribution
3
2
Typical Example
101
7
5
3
2
Latching Current (mA)
Holding Current (mA)
102
7
5
Latching Current vs.
Junction Temperature
Distribution
T2+, G–
Typical Example
102
7
5
3
2
1
10
7
5
3
2
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140 160
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Junction Temperature (°C)
160
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
I Quadrant
40
20
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/µs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
Commutation Characteristics (Tj=125°C)
160
Typical Example
Tj = 150°C
140
120
100
III Quadrant
80
60
40
I Quadrant
20
0 1
10 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/µs)
Rev.2.00
T2+, G+
Typical Example
T2–, G–
100
–60 –40–20 0 20 40 60 80 100 120 140 160
Mar 06, 2007
page 5 of 7
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = 1V/µs)
Breakover Voltage (Tj = t°C)
× 100 (%)
Breakover Voltage (Tj = 25°C)
100
–60 –40–20 0 20 40 60 80 100 120 140 160
103
7
5
3
2
7
5
3
2
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
1
10
7
5
3
2
100
7 0
10
Typical Example
Tj = 125°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
I Quadrant
Minimum
Characteristics
Value
III Quadrant
2 3
5 7 10
1
2 3
5 7 10
Rate of Decay of On-State
Commutating Current (A/ms)
2
BCR5KM-12LB
Gate Trigger Current vs.
Gate Current Pulse Width
7
5
3
2
Typical Example
Tj = 150°C
IT = 4A
τ = 500µs
VD = 200V
f = 3Hz
Time
Main Voltage
(dv/dt)c
VD
Main Current
(di/dt)c
IT
τ
Time
1
10
7
5
Gate Trigger Current (tw)
× 100 (%)
Gate Trigger Current (DC)
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Commutation Characteristics (Tj=150°C)
I Quadrant
III Quadrant
3
2
Minimum
Characteristics
Value
0
10
7 0
10
2 3
5 7 10
1
2 3
5 7 10
2
3
10
7
5
IRGT III
Typical Example
3
IRGT I
2
102
7
5
IFGT I
3
2
101 0
10
2 3
5 7 101
2 3
5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
Recommended Circuit Values Around The Triac
6Ω
Load
6Ω
C1
A
6V
V
Test Procedure I
V
A
V
330Ω
Test Procedure III
Rev.2.00
Mar 06, 2007
page 6 of 7
C0
R0
330Ω
Test Procedure II
6Ω
6V
R1
A
6V
330Ω
C1 = 0.1 to 0.47µF C0 = 0.1µF
R0 = 100Ω
R1 = 47 to 100Ω
BCR5KM-12LB
Package Dimensions
Package Name
TO-220FN
JEITA Package Code

RENESAS Code
PRSS0003AB-A
Previous Code

MASS[Typ.]
2.0g
2.8 ± 0.2
6.5 ± 0.3
3 ± 0.3
φ3.2 ± 0.2
3.6 ± 0.3
15 ± 0.3
10 ± 0.3
14 ± 0.5
Unit: mm
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
2.54 ± 0.25
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Plastic Magazine (Tube)
50 Type name
Lead form
Plastic Magazine (Tube)
50 Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.2.00
Mar 06, 2007
page 7 of 7
Standard order
code example
BCR5KM-12LB
BCR5KM-12LB-A8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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