HANBit HMF8M32M8GL FLASH-ROM MODULE 32MByte (8M x 32-Bit) Part No. HMF8M32M8GL GENERAL DESCRIPTION The HMF8M32M8GL is a high-speed flash read only memory (FROM) module containing 8,388,608 words organized in a x32bit configuration. The module consists of eight 4M x 8bit FROM mounted on a 72-pin, double-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine, which controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from 12.0V flash or EPROM devices. This module is 2 bank organized, each bank containing 4Mx32bit, Bank selection is selected by Bank-E0, Bank-E1 inputs. Byte write enable inputs, (/WE0, /WE1, /WE2, /WE3) are used to enable the module’s 8bits independently. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low-power design. All module components may be powered from a single +5V DC power supply and all inputs and outputs are TTL-compatible. FEATURES PIN ASSIGNMENT w Access time : 75, 90 and 120ns w High-density 32MByte design PIN SYMBOL PIN SYMBOL PIN SYMBOL w High-reliability, low-power design 1 25 DQ17 49 /BANK-E0 w Single + 5V ± 0.5V power supply 2 26 DQ18 50 A18 w Easy memory expansion 3 Vss /BANKE1 DQ0 27 DQ19 51 A17 w All inputs and outputs are TTL-compatible 4 DQ1 28 DQ20 52 A16 w FR4-PCB design 5 DQ2 29 DQ21 53 A15 6 DQ3 30 Vcc 54 A14 7 DQ4 31 DQ22 55 A13 w Minimum 1,000,000 write/erase cycle 8 DQ5 32 DQ23 56 A12 w Sectors erase architecture 9 DQ6 33 /WE2 57 A11 w Sector group protection 10 Vcc 34 NC 58 A10 w Temporary sector group unprotection 11 DQ7 35 DQ24 59 Vcc 12 /WE0 36 DQ25 60 A9 13 RY- /BY 37 DQ26 61 A8 14 DQ8 38 DQ27 62 A7 15 DQ9 39 Vss 63 A6 16 DQ10 40 DQ28 64 A5 17 DQ11 41 DQ29 65 A4 18 DQ12 42 DQ30 66 A3 19 DQ13 43 DQ31 67 A2 20 DQ14 44 /WE3 68 A1 21 DQ15 45 NC 69 A0 22 /WE1 46 /RESET 70 A20 23 NC 47 A19 71 A21 24 DQ16 48 /OE 72 Vss w Low profile 72-pin SIMM w The used device is AM29F032B OPTIONS MARKING w Timing 75ns access -75 90ns access -90 120ns access -120 w Packages 72-pin SIMM URL: www.hbe.co.kr REV.02(August,2002) M 1 HANBit Electronics Co., Ltd. HANBit HMF8M32M8GL Functional Block Diagram DQ0 - DQ31 A0-A21 A0-21 /WE0 /WE /OE /WE1 /OE /RY_BY /Reset U1 /WE /OE /CE RY-BY /Reset /Reset A0-21 A0-21 /WE DQ 8-15 /WE1 U2 /WE /OE /CE RY-BY /CE RY-BY /Reset /Reset A0-21 A0-21 /WE /OE /WE3 /WE0 /CE RY-BY /OE /WE2 A0-21 DQ 0-7 DQ16-23 /WE2 U3 /WE /OE /CE RY-BY /CE RY-BY /Reset /Reset A0-21 A0-21 /WE /OE /CE RY-BY /Reset DQ24-31 U4 /WE3 /OE /RY_BY /Reset /WE /OE DQ 0-7 U5 DQ 8-15 U6 DQ16-23 U7 DQ24-31 U8 /CE RY-BY /Reset /Bank-E0 /Bank-E1 URL: www.hbe.co.kr REV.02(August,2002) 2 HANBit Electronics Co., Ltd. HANBit HMF8M32M8GL TRUTH TABLE MODE /OE /CE /WE DQ POWER STANDBY X H X HIGH-Z STANDBY NOT SELECTED H L H HIGH-Z ACTIVE READ L L H Q ACTIVE WRITE or ERASE X L L D ACTIVE NOTE: X means don’t care ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATING VIN,OUT -2.0V to +7.0V Voltage with respect to ground Vcc VCC -2.0V to +7.0V Storage Temperature TSTG -65oC to +150oC Voltage with respect to ground all other pins Operating Temperature TA -55oC to +125oC w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS SYMBOL MIN Vcc for ± 5% device supply voltage Vcc 4.75V 5.25V Vcc for ± 10% device supply voltages Vcc 4.5V 5.5V Ground VSS 0 PARAMETER TYP. MAX 0 0 DC AND OPERATING CHARACTERISTICS (0oC ≤ TA ≤ 70 oC ; Vcc = 5V ± 0.5V ) PARAMETER TEST CONDITIONS SYMBOL MIN MAX UNITS Input Leakage Current Vcc=Vcc max, VIN= GND to Vcc IL1 ±1.0 µA Output Leakage Current Vcc=Vcc max, VOUT= GND to Vcc IL0 ±1.0 µA Output High Voltage IOH = -2.5mA, Vcc = Vcc min VOH Output Low Voltage IOL = 12mA, Vcc =Vcc min VOL 0.45 V Vcc Active Current for Read(1) /CE = VIL, /OE=VIH, ICC1 40 mA /CE = VIL, /OE=VIH ICC2 60 mA /CE= VIH ICC3 1.0 mA 4.2 V 2.4 V Vcc Active Current for Program or Erase(2) Vcc Standby Current Low Vcc Lock-Out Voltage VLKO 3.2 Notes: 1. The Icc current listed is typically less than 2mA/MHz, with /OE at VIH. 2. Icc active while embedded algorithm (program or erase) is in progress URL: www.hbe.co.kr REV.02(August,2002) 3 HANBit Electronics Co., Ltd. HANBit HMF8M32M8GL 3. Maximum Icc current specifications are tested with Vcc=Vcc max ERASE AND PROGRAMMING PERFORMANCE LIMITS PARAMETER UNIT MIN. TYP. COMMENTS MAX. Excludes 00H programming Sector Erase Time - 1 8 sec prior to erasure Byte Programming Time - 7 300 µs Excludes system-level overhead Chip Programming Time - 28.8 86.4 sec Excludes system-level overhead TSOP CAPACITANCE PARAMETER PARAMETER SYMBOL TEST SETUP MIN MAX UNIT VIN = 0 6 7.5 pF VOUT = 0 8.5 12 pF VIN = 0 7.5 9 pF DESCRIPTION CIN Input Capacitance COUT Output Capacitance CIN2 Control Pin Capacitance o Notes : Test conditions TA = 25 C, f=1.0 MHz. AC CHARACTERISTICS u Read Only Operations Characteristics PARAMETER SYMBOLS JEDEC STANDARD tAVAV tRC tAVQV tACC DESCRIPTION TEST SETUP Read Cycle Time -75 -90 UNIT Min 70 90 ns Max 70 90 ns Max 70 90 ns /CE = VIL Address to Output Delay /OE = VIL tELQV tCE Chip Enable to Output Delay /OE = VIL tGLQV tOE Chip Enable to Output Delay Max 40 40 ns tEHQZ tDF Chip Enable to Output High-Z Max 20 20 ns tGHQZ tDF Output Enable to Output High-Z Max 20 20 ns tAXQX tQH Min 0 0 ns Output Hold Time From Addresses, /CE or /OE, Whichever Occurs First URL: www.hbe.co.kr REV.02(August,2002) 4 HANBit Electronics Co., Ltd. HANBit HMF8M32M8GL TEST SPECIFICATIONS TEST CONDITION 75 ALL OTHERS Output load UNIT 1TTL gate Output load capacitance, 30 100 pF 5 20 ns 0.0 - 3.0 0.45-2.4 V Input timing measurement reference levels 1.5 0.8 V Output timing measurement reference levels 1.5 2.0 V CL (Including jig capacitance) Input rise and full times Input pulse levels 5.0V 2.7kΩ IN3064 or Equivalent Device Under Test CL 6.2kΩ Diodes = IN3064 or Equivalent Note : CL = 100pF including jig capacitance u Write (Erase/Program) Operations PARAMETER SYMBOLS DESCRIPTION -75 -90 UNIT JEDEC STANDARD tAVAV tWC Write Cycle Time Min 70 90 ns tAVWL tAS Address Setup Time Min 0 0 ns tWLAX tAH Address Hold Time Min 40 45 ns tDVWH tDS Data Setup Time Min 40 45 ns tWHDX tDH Data Hold Time Min 0 0 ns tGHWL tGHWL Read Recover Time Before Write Min 0 0 ns tELWL tCS /CE Setup Time Min 0 0 ns tWHEH tCH /CE Hold Time Min 0 0 ns tWLWH tWP Write Pulse Width Min 40 45 ns tWHWL tWPH Write Pulse Width High Min 20 20 ns URL: www.hbe.co.kr REV.02(August,2002) 5 HANBit Electronics Co., Ltd. HANBit HMF8M32M8GL tWHWH1 tWHWH1 Byte Programming Operation Typ 7 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 1 Sec Vcc set up time Min 50 50 µs -75 -90 UNIT tVCS Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations uWrite (Erase/Program) Operations Alternate /CE Controlled Writes PARAMETER SYMBOLS DESCRIPTION JEDEC STANDARD tAVAV tWC Write Cycle Time Min 70 90 Ns tAVWL tAS Address Setup Time Min 0 0 ns tWLAX tAH Address Hold Time Min 40 45 ns tDVWH tDS Data Setup Time Min 40 45 ns tWHDX tDH Data Hold Time Min 0 0 ns tOES Output Enable Setup Time Min 0 0 ns Read Recover Time Before Write Min 0 0 ns tGHWL tGHWL tELWL tCS /CE Setup Time Min 0 0 ns tWHEH tCH /CE Hold Time Min 0 0 ns tWLWH tWP Write Pulse Width Min 40 45 ns tWHWL tWPH Write Pulse Width High Min 20 20 ns tWHWH1 tWHWH1 Byte Programming Operation Typ 7 7 µs tWHWH2 tWHWH2 Sector Erase Operation (Note1) Typ 1 1 sec Notes : 1. This does not include the preprogramming time 2. This timing is only for Sector Protect operations URL: www.hbe.co.kr REV.02(August,2002) 6 HANBit Electronics Co., Ltd. HANBit HMF8M32M8GL u READ OPERATIONS TIMING u RESET TIMING URL: www.hbe.co.kr REV.02(August,2002) 7 HANBit Electronics Co., Ltd. HANBit HMF8M32M8GL u PROGRAM OPERATIONS TIMING u CHIP/SECTOR ERASE OPERATION TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 8 HANBit Electronics Co., Ltd. HANBit HMF8M32M8GL u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS) u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS) URL: www.hbe.co.kr REV.02(August,2002) 9 HANBit Electronics Co., Ltd. HANBit HMF8M32M8GL u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS URL: www.hbe.co.kr REV.02(August,2002) 10 HANBit Electronics Co., Ltd. HANBit HMF8M32M8GL PACKAGE DIMENSIONS 108mm 3.2 mm 6.35 mm - 1 72 2.03 mm 1.02 mm 6.35 mm 1.27 mm 3.34 mm 95.25 mm 2.54 mm 0.25 mm MAX MIN 1.29±0.08 mm Gold: 1.04±0.10 mm Solder: 0.914±0.10 mm 1.27 (Solder & Gold Plating) ORDERING INFORMATION Part Number Density Org. Package HMF8M32M8GL-75 32MByte 8MX 32bit 72 Pin-SIMM HMF8M32M8GL-90 32MByte 8MX 32bit HMF8M32M8GL-120 32MByte 8MX 32bit URL: www.hbe.co.kr REV.02(August,2002) Component Vcc SPEED 8EA 5V 70ns 72 Pin-SIMM 8EA 5V 90ns 72 Pin-SIMM 8EA 5V 120ns 11 Number HANBit Electronics Co., Ltd.