Infineon BAR63-05 Silicon pin diode Datasheet

BAR63...
Silicon PIN Diodes
PIN diode for high speed
switching of RF signals
Very low forward resistance (low insertion loss)
Very low capacitance (high isolation)
For frequencies up to 3GHz
BAR63-02..
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
1
3
2
Type
BAR63-02L*
BAR63-02V
BAR63-02W
BAR63-03W
BAR63-04
BAR63-04W
BAR63-05
BAR63-05W
BAR63-06
BAR63-06W
BAR63-07L4*
BAR63-06
BAR63-06W
3
D 1
D 2
D 1
1
2
1
Package
TSLP-2-1
SC79
SCD80
SOD323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
TSLP-4-4
BAR63-07L4
3
D 2
2
4
D 1
D 2
1
2
Configuration
single, leadless
single
single
single
series
series
common cathode
common cathode
common anode
common anode
parallel pair, leadless
3
D 1
1
D 2
2
LS(nH)
0.4
0.6
0.6
1.8
1.8
1.4
1.8
1.4
1.8
1.4
0.4
Marking
G
G
GG
G
G4s
G4s
G5s
G5s
G6s
G6s
P3s
* preliminary data
1
Jun-27-2003
BAR63...
Maximum Ratings at TA = 25°C, unless otherwise specified
Parameter
Symbol
Value
Diode reverse voltage
VR
50
Forward current
IF
100
Total power dissipation
Ptot
250
BAR63-02V, -02W, BAR63-03W, TS 115°C
250
55°C
V
mA
mW
BAR63-02L, TS 118°C
BAR63-04...BAR63-06, TS
Unit
250
BAR63-04S, TS 115°C
250
BAR63-04W...BAR63-06W, TS 105°C
250
BAR63-07L4, TS tbd
250
150
Junction temperature
Tj
Operating temperature range
Top
-55 ... 125
Storage temperature
Tstg
-55 ... 150
°C
Thermal Resistance
Parameter
Symbol
Junction - soldering point1)
RthJS
Unit
K/W
125
140
155
380
180
180
tbd
BAR63-02L
BAR63-02V, BAR63-02W
BAR63-03W
BAR63-04...BAR63-06
BAR63-04S
BAR63-04W...BAR63-06W
BAR63-07L4
1For
Value
calculation of RthJA please refer to the Technical Information
2
Jun-27-2003
BAR63...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
50
-
-
V
IR
-
-
10
nA
VF
-
0.95
1.2
V
DC Characteristics
Breakdown voltage
V(BR)
I(BR) = 5 µA
Reverse current
VR = 35 V
Forward voltage
IF = 100 mA
3
Jun-27-2003
BAR63...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Diode capacitance
pF
CT
VR = 5 V, f = 1 MHz
-
0.21
0.3
VR = 0 V, 100 MHz ... 1.8 GHz
-
0.3
-
Reverse parallel resistance
k
RP
VR = 0 V, f = 100 MHz
-
500
-
VR = 0 V, f = 1 GHz
-
15
-
VR = 0 V, f = 1.8 GHz
-
5
-
Forward resistance
rf
IF = 5 mA, f = 100 MHz
-
1.2
2
IF = 10 mA, f = 100 MHz
-
1
-
rr
-
75
-
ns
I-region width
WI
-
4.5
-
µm
Insertion loss1)
|S21|2
Charge carrier life time
IF = 10 mA, IR = 6 mA, measured at IR = 3 mA,
RL = 100 dB
IF = 1 mA, f = 1.8 GHz
-
-0.15
-
IF = 5 mA, f = 1.8 GHz
-
-0.11
-
IF = 10 mA, f = 1.8 GHz
-
-0.1
-
VR = 0 V, f = 0.9 MHz
-
-17.9
-
VR = 0 V, f = 1.8 MHz
-
-12.3
-
VR = 0 V, f = 2.45 MHz
-
-10
-
Isolation1)
1BAR63-02L
|S21|2
in series configuration, Z = 50
4
Jun-27-2003
BAR63...
Diode capacitance CT = (VR)
Reverse parallel resistance RP = (VR )
f = 1MHz - 1.8GHz
f = Parameter
10 3
EHD07139
0.5
100 MHz
KOhm
CT
pF
0.4
10 2
Rp
1 GHz
0.3
10 1
1.8 GHz
0.2
10 0
0.1
0
0
10
20
V
VR
10 -1
0
30
5
10
15
Forward current IF = (VF)
f = 100MHz
TA = Parameter
rf
EHD07138
ΙF
Ω
V
30
VR
Forward resistance rf = (IF )
10 2
20
10 3
mA
EHD07171
BAR 63...
10 2
10 1
10 1
10 0
25 ˚C
40 ˚C
85 ˚C
10 -1
10 0
10 -2
10 -1 -2
10
10 -1
10 0
10 -3
0.3
10 1 mA 10 2
ΙF
0.5
0.8
1
V
1.2
VF
5
Jun-27-2003
BAR63...
Forward current IF = (TS )
Forward current IF = (TS )
BAR63-04...BAR63-06
BAR63-02V, BAR63-02W
120
120
mA
mA
IF
80
IF
80
60
60
40
40
20
20
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
15
30
45
60
75
90 105 120 °C
TS
150
TS
Forward current IF = (TS )
Forward current IF = (TS )
BAR63-03W
BAR63-04W...BAR63-06W
120
120
mA
mA
IF
80
IF
80
60
60
40
40
20
20
0
0
15
30
45
60
75
90 105 120 °C
0
0
150
TS
15
30
45
60
75
90 105 120 °C
150
TS
6
Jun-27-2003
BAR63...
Permissible Puls Load RthJS = (tp )
Permissible Pulse Load
BAR63-04...BAR63-06
IFmax / IFDC = (tp )
BAR63-04...BAR63-06
R thJS
EHB07146
5
K/W
Ι F max 10
Ι F DC
5
EHB07147
2
tP
t
D= P
T
T
10 2
D=
0.5
0.2
0.1
0.05
0.05
0.01
0.005
0
5
10 1
5
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
5
tP
t
D= P
T
10 0
10 -6
10 -5
10 -4
T
10 -3
10 -2
s
tP
10 0
10 -6
10 0
10 -5
10 -4
10 -3
Permissible Puls Load RthJS = (tp )
Permissible Pulse Load
BAR63-02V, BAR63-02W
IFmax / IFDC = (tp )
10 -2
s
tP
10 0
s
10
BAR63-02V, BAR63-02W
10 1
10 3
IFmax/ IFDC
RthJS
K/W
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
tp
10
-5
10
-4
10
-3
10
-2
0
tp
7
Jun-27-2003
BAR63...
Permissible Puls Load RthJS = (tp )
Permissible Pulse Load
BAR63-03W
IFmax / IFDC = (tp )
BAR63-03W
10 1
10 3
IFmax/ IFDC
RthJS
K/W
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
-
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
10 0 -6
10
0
10
-5
10
-4
10
-3
10
-2
tp
s
10
0
10
0
tp
Permissible Puls Load RthJS = (tp )
Permissible Pulse Load
BAR63-04W...BAR63-06W
IFmax / IFDC = (tp )
BAR63-04W...BAR63-06W
10 3
10 3
-
IFmax/ IFDC
RthJS
K/W
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
10 0 -6
10
10
-5
10
-4
10
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
-3
10
-2
s
10
10 0 -6
10
0
tp
10
-5
10
-4
10
-3
10
-2
s
tp
8
Jun-27-2003
BAR63...
Insertion loss |S21 |2 = (f)
Isolation |S21 |2 = (f)
IF = Parameter
VR = Paramter
BAR63-02L in series configuration, Z = 50
BAR63-02L in series configuration, Z = 50
0
0
10 mA
dB
Isolation
Insertion Loss
dB
5 mA
1 mA
-0.2
-10
-15
0V
1V
10 V
-20
-0.3
-25
-0.4
0
1
2
3
4
GHz
-30
0
6
f
1
2
3
4
GHz
6
f
9
Jun-27-2003
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