NVTFS5116PL Power MOSFET −60 V, −14 A, 52 mW, Single P−Channel Features • • • • • • Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFS5116PLWF − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) MAX ID MAX 52 mW @ −10 V −60 V −14 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter 72 mW @ −4.5 V Symbol Value Unit Drain−to−Source Voltage VDSS −60 V Gate−to−Source Voltage VGS ±20 V ID −14 A Continuous Drain Current RYJ−mb (Notes 1, 2, 3, 4) Power Dissipation RYJ−mb (Notes 1, 2, 3) Continuous Drain Current RqJA (Notes 1 & 3, 4) Power Dissipation RqJA (Notes 1, 3) Pulsed Drain Current Tmb = 25°C Steady State Tmb = 100°C Tmb = 25°C Steady State PD Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL(pk) = 30 A, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) ID MARKING DIAGRAM −4 PD W 3.2 1.6 IDM −126 A TJ, Tstg −55 to +175 °C IS −17 A EAS 45 mJ TL 260 °C THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Junction−to−Mounting Board (top) − Steady State (Note 2 and 3) Junction−to−Ambient − Steady State (Note 3) S (1,2,3) A −6 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Parameter G (4) 10 TA = 100°C TA = 25°C, tp = 10 ms W 21 TA = 100°C TA = 25°C D (5−8) −10 Tmb = 100°C TA = 25°C P−Channel MOSFET Symbol Value Unit RYJ−mb 7.2 °C/W RqJA 47 1 WDFN8 (m8FL) CASE 511AB XXXX A Y WW G 1 S S S G XXXX AYWWG G D D D D = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi (Y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2014 June, 2014 − Rev. 3 1 Publication Order Number: NVTFS5116PL/D NVTFS5116PL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA −60 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 60 V V TJ = 25°C −1.0 TJ = 125°C −10 IGSS VDS = 0 V, VGS = "20 V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA −3 V Drain−to−Source On Resistance RDS(on) VGS = −10 V, ID = −7 A 37 52 mW VGS = −4.5 V, ID = −7 A 51 72 gFS VDS = 15 V, ID = −5 A 11 S Input Capacitance Ciss 1258 pF Output Capacitance Coss VGS = 0 V, f = 1.0 MHz, VDS = −25 V Reverse Transfer Capacitance Crss 84 Total Gate Charge QG(TOT) 14 nC Threshold Gate Charge QG(TH) 1 nC Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Gate−to−Source Leakage Current "100 mA nA ON CHARACTERISTICS (Note 5) Forward Transconductance −1 CHARGES AND CAPACITANCES Total Gate Charge QG(TOT) VGS = −4.5 V, VDS = −48 V, ID = −7 A 127 4 8 VGS = −10 V, VDS = −48 V, ID = −7 A 25 nC 14 ns SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = −4.5 V, VDS = −48 V, ID = −7 A tf 68 24 36 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD VGS = 0 V, IS = −7 A TJ = 25°C −0.79 TJ = 125°C −0.64 tRR 21 Charge Time ta 16 Discharge Time tb Reverse Recovery Charge VGS = 0 V, dIS/dt = 100 A/ms, IS = −7 A QRR http://onsemi.com 2 V ns 5 24 5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. −1.20 nC NVTFS5116PL TYPICAL CHARACTERISTICS 50 40 TJ = 25°C −5.0 V −10 V −ID, DRAIN CURRENT (A) 40 −ID, DRAIN CURRENT (A) VDS ≥ −10 V VGS = −7 V −4.6 V −4.3 V 30 −4 V 20 −3.7 V −3.4 V 10 0 1 2 3 4 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 20 TJ = 25°C 10 TJ = 125°C −3.1 V −2.8 V 0 30 5 2 ID = −7 A TJ = 25°C 0.065 0.055 0.045 0.035 3 4 5 6 7 8 9 −VGS, GATE−TO−SOURCE VOLTAGE (V) 0.070 VGS = −4.5 V 0.060 0.050 VGS = −10 V 0.040 0.030 5 10 10 15 20 25 30 35 40 −ID, DRAIN CURRENT (A) Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 2.2 ID = −7 A VGS = −10 V VGS = 0 V 1.8 −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 6 0.080 Figure 3. On−Resistance vs. Gate−to−Source Voltage 2.0 3 4 5 −VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 0.075 TJ = −55°C 0 1.6 1.4 1.2 1.0 0.8 10000 TJ = 150°C 1000 TJ = 125°C 0.6 0.4 50 25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 175 100 10 Figure 5. On−Resistance Variation with Temperature 20 30 40 50 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 60 NVTFS5116PL TYPICAL CHARACTERISTICS 10 VGS = 0 V 1600 C, CAPACITANCE (pF) −VGS, GATE−TO−SOURCE VOLTAGE (V) 1800 TJ = 25°C 1400 Ciss 1200 1000 800 600 400 Coss 200 0 Crss 0 10 20 30 40 50 8 6 Qgs 4 VDS = −48 V ID = −7 A TJ = 25°C 0 0 10 15 20 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 25 40 tf −IS, SOURCE CURRENT (A) 100 tr td(off) td(on) 10 1.0 VGS = 0 V TJ = 25°C 30 20 10 0 1 10 RG, GATE RESISTANCE (W) 0.5 100 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0.6 0.7 0.8 0.9 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) 1.0 Figure 10. Diode Forward Voltage vs. Current 1000 45 VGS = −10 V Single Pulse TC = 25°C 10 100 ms 1 ms 10 ms 10 ms 1 RDS(on) Limit Thermal Limit Package Limit dc 0.1 0.1 1 10 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) −ID, DRAIN CURRENT (A) 5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDD = −48 V ID = −7 A VGS = −4.5 V 100 Qgd 2 60 1000 t, TIME (ns) QT 100 ID = −30 A 30 15 0 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 175 NVTFS5116PL TYPICAL CHARACTERISTICS 100 Duty Cycle = 0.5 RqJA(t) (°C/W) 10 1 0.2 0.1 0.05 0.02 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Marking Package Shipping† NVTFS5116PLTAG 5116 WDFN8 (Pb−Free) 1500 / Tape & Reel NVTFS5116PLWFTAG 16LW WDFN8 (Pb−Free) 1500 / Tape & Reel NVTFS5116PLTWG 5116 WDFN8 (Pb−Free) 5000 / Tape & Reel NVTFS5116PLWFTWG 16LW WDFN8 (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 5 NVTFS5116PL PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A B D1 2X 0.20 C 8 7 6 5 4X q E1 E c 1 2 3 4 A1 TOP VIEW 0.10 C A 0.10 C SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 6X C e SEATING PLANE DETAIL A 8X e/2 L 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 0.65 PITCH PACKAGE OUTLINE K MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 4X 0.66 M E3 8 G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* 1 E2 DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q 5 D2 BOTTOM VIEW 3.60 L1 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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